Features / Advantages: Applications: Package: TO-252 (DPak)

Similar documents
1 2/4 3. Features / Advantages: Applications: Package: TO-263 (D2Pak)

Features / Advantages: Applications: Package: SOT-227B (minibloc)

Features / Advantages: Applications: Package: SOT-227B (minibloc)

High Efficiency Standard Rectifier

Sonic Fast Recovery Diode

Features / Advantages: Applications: Package: SOT-227B (minibloc)

Features / Advantages: Applications: Package: TO-220. Diode for main rectification For single and three phase bridge configurations

Sonic Fast Recovery Diode

Features / Advantages: Applications: Package: TO-247

Features / Advantages: Applications: Package: ISOPLUS247

Sonic Fast Recovery Diode

Features / Advantages: Applications: Package: SOT-227B (minibloc)

Features / Advantages: Applications: Package: TO-247

Features / Advantages: Applications: Package: SOT-227B (minibloc) Diode for main rectification For single and three phase bridge configurations

Features / Advantages: Applications: Package: SOT-227B (minibloc)

Standard Rectifier Module

Features / Advantages: Applications: Package: SOT-227B (minibloc)

Standard Rectifier Module

Standard Rectifier Module

Features / Advantages: Applications: Package: SOT-227B (minibloc) Diode for main rectification For single and three phase bridge configurations

Features / Advantages: Applications: Package: i4-pac

Sonic Fast Recovery Diode

Features / Advantages: Applications: Package: SOT-227B (minibloc)

Features / Advantages: Applications: Package: TO-263 (D2Pak)

High Voltage Standard Rectifier

Standard Rectifier Module

Standard Rectifier Module

High Voltage Standard Rectifier

High Voltage Standard Rectifier Module

Features / Advantages: Applications: Package: TO-247

3 1/4. Features / Advantages: Applications: Package: SOT-227B (minibloc)

Features / Advantages: Applications: Package: TO-247

Thyristor \ Diode Module

High Efficiency Thyristor

Features / Advantages: Applications: Package: TO-220

3~ Rectifier Bridge, half-controlled (high-side) + free wheeling Diode 10/11 19/20 21/22. Features / Advantages: Applications: Package: E2-Pack

Features / Advantages: Applications: Package: SOT-227B (minibloc)

Features / Advantages: Applications: Package: TO-247

Features / Advantages: Applications: Package: TO-247

Thyristor \ Diode Module

Features / Advantages: Applications: Package: PLUS247

Standard Rectifier Module

Standard Rectifier Module

Features / Advantages: Applications: Package: TO-247

Features / Advantages: Applications: Package: ISOPLUS247

Features / Advantages: Applications: Package: TO-247

SiC Schottky Diode DCG20C1200HR. Ultra fast switching Zero reverse recovery Common Cathode. V RRM = 1200 V I FAV = 2x 12.5 A.

Thyristor \ Diode Module

Thyristor \ Diode Module

Thyristor \ Diode Module

Features / Advantages: Applications: Package: TO-240AA

3 1/4. Features / Advantages: Applications: Package: SOT-227B (minibloc)

High Voltage Thyristor \ Diode Module

High Efficiency Thyristor

Features / Advantages: Applications: Package: SOT-227B (minibloc)

Features / Advantages: Applications: Package: TO-240AA

Thyristor \ Diode Module

Standard Rectifier Module

Features / Advantages: Applications: Package: Y1

Standard Rectifier Module

Standard Rectifier Module

Sonic Fast Recovery Diode

Thyristor \ Diode Module

Features / Advantages: Applications: Package: Y1

Thyristor \ Diode Module

Features / Advantages: Applications: Package: Y1

Features / Advantages: Applications: Package: TO-247

Standard Rectifier Module

High Efficiency Thyristor

Standard Rectifier Module

Features / Advantages: Applications: Package: ISO247

High Efficiency Thyristor

High Efficiency Thyristor

Features / Advantages: Applications: Package: ComPack

Features / Advantages: Applications: Package: ISOPLUS247

SiC Schottky Diode. Ultra fast switching Zero reverse recovery DCG85X1200NA. V RRM = 1200 V I FAV = 2x 41 A. prelimininary. Part number DCG85X1200NA

Features / Advantages: Applications: Package: TO-220FP

Applications: AC motor drives Solar inverter Air-conditioning systems high power converters UPS

Features / Advantages: Applications: Package: TO-240AA

High Efficiency Thyristor

Features / Advantages: Applications: Package: TO-240AA

Features / Advantages: Applications: Package: TO-240AA

Three phase full Bridge with Trench MOSFETs in DCB-isolated high-current package

Features / Advantages: Applications: Package: SMPD

STARPOWER MOSFET MD25CUR120D6S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR

STARPOWER MOSFET MD50SGR120D6S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR

Power MOSFET Stage for Boost Converters

Device Marking Code Package Packaging. SDB10200DI = Specific Device Code YWW = Year & Week Code Marking -. Y = Year Code -.

600 V 10 A. IXRFFB60110 Silicon Carbide Full Wave Bridge Rectifier. Description. Figure 1 Functional Diagram

15MQ040N SCHOTTKY RECTIFIER. 3 Amp. I F(AV) = 3 Amp V R = 40V. Bulletin PD rev. H 07/04

STARPOWER MOSFET MD50FFC120C5S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR

SAFEIR Series 20ETS12, 20ETS12S

IGBT STARPOWER GD75HFU120C1S SEMICONDUCTOR TM. Molding Type Module. 1200V/75A 2 in one-package. General Description. Features. Typical Applications

IGBT STARPOWER GD400SGK120C2S. Absolute Maximum Ratings T C =25 unless otherwise noted SEMICONDUCTOR TM. Molding Type Module

10CTQ150 10CTQ150S 10CTQ150-1

High Voltage, Input Rectifier Diode, 20 A

15MQ040NPbF SCHOTTKY RECTIFIER. I F(AV) = 3Amp V R = 40V. Bulletin PD /04

IGBT STARPOWER SEMICONDUCTOR TM. Molding Type Module. 1200V/10A PIM in one-package. General Description. Features. Typical Applications

IGBT Module H Bridge MIEB 101H1200EH. = 1200 V = 183 A V CE(sat) = 1.8 V V CES I C25. Part name (Marking on product) MIEB101H1200EH

IGBT XPT Module H Bridge

Transcription:

Diode M I 5 A FA F.78 High Performance Diode Low Loss and Soft ecovery Single Diode Part number DSA5IMUC Marking on Product: SFMAUI Backside: cathode 3 Features / Advantages: Applications: Package: TO-252 (DPak) ery low f Extremely low switching losses Low Irm values Improved thermal behaviour High reliability circuit operation Low voltage peaks for reduced protection circuits Low noise switching ectifiers in switch mode power supplies (SMPS) Free wheeling diode in low voltage converters Industry standard outline ohs compliant Epoxy meets UL 9- Terms and Conditions of Usage The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact your local sales office. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office. Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.

Symbol SM M I I Definition T 25 C T 5 C atings typ. max. F forward voltage drop I 5 A T 25 C.9 F T C 5 C thermal resistance junction to case 2 K/W FA max. non-repetitive reverse blocking voltage reverse current, drain current I F Conditions 5 A T 25 C F threshold voltage T 75 C.53 for power loss calculation only r F slope resistance.8 mω thjc thch max. repetitive reverse blocking voltage T 25 C average forward current thermal resistance case to heatsink I F 3 A I F 3 A rectangular d.5 P tot total power dissipation T 25 C 75 W T 5 C I FSM max. forward surge current t ms; (5 Hz), sine; T 5 C C J junction capacitance 2 f MHz T 25 C 67 T 75 C C min..5 25 2.5..78.95 5 Unit µa ma A K/W A pf

Package ) IMS is typically limited by the pin-to-chip resistance (); or by the current capability of the chip (2). In case of () and a product with multiple pins for one chip-potential, the current capability can be increased by connecting the pins as one contact. atings Symbol Definition Conditions min. typ. max. Unit I MS MS current ) per terminal 2 A T virtual junction temperature -55 75 C T op operation temperature -55 5 C Weight F C TO-252 (DPak) T stg storage temperature -55 5 C mounting force with clip 2.3 6 g N Logo Part number Product Marking IXYS abcdefg Part description D S A 5 IM UC Diode Diode low F Current ating Single Diode everse oltage [] Assembly Line Date Code Z Y Y WW Ordering Standard Ordering Number Marking on Product Delivery Mode Quantity Code No. DSA5IMUC SFMAUI Tape & eel 25 58 Similar Part Package oltage class DSB5IM3UC 3 DSA5IM5UC 5 DSAIMUC DSA5IM5UC 5 Equivalent Circuits for Simulation * on die level T 75 C I max threshold voltage.53 max slope resistance * 7.6 mω

Outlines TO-252 (DPak) 3

3 T 75 C 25 I F 2 8 T 5 C 5 C 25 C I 5 C 5 C C C T 5 T 25 C [ma]. 75 C [pf] 6. 5 C 25 C 5..2..6.8..2. 8 6 F [] [] [] Fig. Maximum forward voltage drop characteristics Fig. 2 Typ. reverse current I vs. reverse voltage 5 5 Fig. 3 Typ. junction capacitance C T vs. reverse voltage 2 6 2 6 d.5 DC I F(A) 8 P (A) [W] 8 6 2 d DC.5.33.25.7.8 8 6 [ C] T C Fig. Avg: forward current I F(A) vs. case temperature T C 8 6 2 I F(A) Fig. 5 Forward power loss characteristics 2. 2. Z thjc.6.2 [K/W].8..... t [s] Fig. 6 Transient thermal impedance junction to case i thi (K/W) t i (s).. 2.3. 3.5.35..95 5.6.