Revision: Rev

Similar documents
Tire Pressure Monitoring Sensor

Revision: Rev

Revision: Rev

Revision: Rev

Revision: Rev

Revision: Rev

Revision: Rev

BGA729N6. Data Sheet. RF & Protection Devices. Broadband Low Noise Amplifier for Portable and Mobile TV Applications. Revision 3.

LTE Band-13 ( MHz) for GNSS

BGA7L1BN6. Data Sheet. RF & Protection Devices. Silicon Germanium Low Noise Amplifier for LTE. Revision 3.1,

Revision: Rev

BGM1143N9. Data Sheet. RF & Protection Devices. Front-End Module for Global Navigation Satellite Systems (GNSS) Revision 2.0, Preliminary

Revision: Rev

Revision: Rev

BGA924N6. Data Sheet. RF & Protection Devices. Silicon Germanium Low Noise Amplifier for Global Navigation Satellite Systems (GNSS)

Revision: Rev

BGA7L1N6. Data Sheet. RF & Protection Devices. Silicon Germanium Low Noise Amplifier for LTE. Revision 3.1 (Min/Max),

BGM1043N7. Data Sheet. RF & Protection Devices. GPS and GLONASS Front-End Module. Revision 3.0,

BGM1034N7. Data Sheet. RF & Protection Devices. GPS and GLONASS Front-End Module. Revision 3.0,

About this document. Application Note AN420

Revision: Rev

Power Management & Multimarket

LED Drivers for Low Power LEDs BCR205W. Data Sheet. Industrial and Multimarket. Ultra low dropout LED controller. Revision 2.

BGB719N7ESD. Data Sheet. RF & Protection Devices. Low Noise Amplifier MMIC for FM Radio Applications. Revision 1.1,

Band 20 ( MHz)

Power Management & Multimarket

Revision: Rev

Revision: Rev

Single Band LTE LNA BGA7M1N6 for MHz to 2200 MHz, Using Revision: Rev

Power Management & Multimarket

AN523. About this document. Scope and purpose

BGA751N7. Data Sheet. RF & Protection Devices. SiGe Bipolar 3G/3.5G/4G Single-Band LNA. Revision 3.1,

Power Management & Multimarket

Revision: Rev

in 1550 MHz MHz with a High Q

Power Management & Multimarket

BGS12SN6. Data Sheet. Power Management & Multimarket. Wideband RF SPDT Switch in ultra small package with 0.77mm 2 footprint. Revision 1.

Power Management & Multimarket

Power Management & Multimarket

Power Management & Multimarket

Power Management & Multimarket

BGSF110GN26. Preliminary Datasheet. RF & Protection Devices

Revision: Rev

BGS22W2L10. Data Sheet. Power Management & Multimarket. DPDT (Dual-Pole / Double-Throw) Differential RF Switch. Revision October 12, 2012

BGS12SN6. Data Sheet. Power Management & Multimarket. Wideband RF SPDT Switch in small package with 0.77mm 2 footprint. Revision 2.

BFR840L3RHESD for 5 to 6 GHz

Power Management & Multimarket

Power Management & Multimarket

Revision: Rev

BGB717L7ESD. Data Sheet. RF & Protection Devices. SiGe:C Low Noise Amplifier MMIC for FM Radio Applications. Revision 3.

Power Management & Multimarket

BFP450. Datasheet. RF & Protection Devices. Linear Low Noise Silicon Bipolar RF Transistor. Revision 1.2,

Power Management & Multimarket

Revision: Rev

BFP650. Data Sheet. RF & Protection Devices. High Linearity Silicon Germanium Bipolar RF Transistor. Revision 1.1,

Revision: Rev

BGA713L7. Data Sheet. RF & Protection Devices. Single-Band UMTS LNA (700, 800 MHz) Revision 3.0,

Revision: Rev

Power Management & Multimarket

Revision: Rev

BFN18. Data Sheet. RF & Protection Devices. NPN Silicon High-Voltage Transistors. Revision 1.0,

TVS Diodes ESD5V0L1B-02V. Data Sheet. Industrial and Multi-Market. Transient Voltage Suppressor Diodes. Bi-directional Low Capacitance TVS Diode

LED Drivers for High Power LEDs

Power Management & Multimarket

BFP720F. Data Sheet. RF & Protection Devices. Low Noise Silicon Germanium Bipolar RF Transistor. Revision 1.1,

SPDT RF CMOS Switch. Revision: Rev

Power Management & Multimarket

BGA748L16. Data Sheet. RF & Protection Devices. High Linearity Quad-Band UMTS LNA (2100, 1900, 900, 800 MHz) Revision 3.

BGB741L7ESD. Data Sheet. RF & Protection Devices. Robust Low Noise Broadband RF Amplifier MMIC. Revision 2.0,

BFP760. Data Sheet. RF & Protection Devices. Low Noise Silicon Germanium Bipolar RF Transistor. Revision 1.1,

BFP840ESD. Data Sheet. RF & Protection Devices. Robust Low Noise Silicon Germanium Bipolar RF Transistor. Revision 1.2,

BFP843. Data Sheet. RF & Protection Devices. Robust Low Noise Broadband Pre-Matched Bipolar RF Transistor. Revision 1.

BFP740. Data Sheet. RF & Protection Devices. Low Noise Silicon Germanium Bipolar RF Transistor. Revision 1.1,

Power Management & Multimarket

Revision: Rev

Power Management & Multimarket

Power Management & Multimarket

Power Management & Multimarket

to 5GHz Revision: Rev

BFP740F. Data Sheet. RF & Protection Devices. Low Noise Silicon Germanium Bipolar RF Transistor. Revision 2.0,

BFP842ESD. Data Sheet. RF & Protection Devices. Robust Low Noise Silicon Germanium Bipolar RF Transistor. Revision 1.1,

BGA628L7. Data Sheet. RF & Protection Devices. Silicon Germanium Wide Band Low Noise Amplifier. Revision 1.1, Preliminary

BFP640ESD. Data Sheet. RF & Protection Devices. Robust Low Noise Silicon Germanium Bipolar RF Transistor. Revision 1.1,

BFP640. Data Sheet. RF & Protection Devices. Low Noise Silicon Germanium Bipolar RF Transistor. Revision 2.0,

BFR720L3RH. Data Sheet. RF & Protection Devices. Low Noise Silicon Germanium Bipolar RF Transistor. Revision 2.0,

BFR740L3RH. Data Sheet. RF & Protection Devices. Low Noise Silicon Germanium Bipolar RF Transistor. Revision 2.0,

Power Management & Multimarket

BGA735N16. Data Sheet. RF & Protection Devices. High Linearity Tri-Band LTE/UMTS LNA (2600/2300/2100, 1900/1800, 900/800/700 MHz)

BGA734L16. Data Sheet. RF & Protection Devices. Low Power Tri-Band UMTS LNA (2100, 1900, 800 MHz) Revision 1.1,

BFR840L3RHESD. Data Sheet. RF & Protection Devices. Robust Low Noise Silicon Germanium Bipolar RF Transistor. Revision 1.

BGS12PN10. Data Sheet. Power Management & Multimarket. SPDT high linearity, high power RF Switch. Revision

Edition Published by Infineon Technologies AG Munich, Germany 2017 Infineon Technologies AG All Rights Reserved.

Revision: Rev

BFP450. Data Sheet. RF & Protection Devices. High Linearity Low Noise Si NPN RF Transistor. Revision 1.0,

BFP720FESD. Data Sheet. RF & Protection Devices. Robust Low Noise Silicon Germanium Bipolar RF Transistor. Revision 1.

High Precision Hall Effect Switch for Consumer Applications

BGA123L4 as Low Current Low Noise Amplifier for GNSS Applications in L5/E5 bands

LED Drivers for High Power LEDs

Application Note AN410

High Precision Automotive Hall Effect Switch for 5V Applications

Transcription:

Temparature Variation of high - Linearity Low Noise Ampifier for Global Navigation Satellite Systems (GNSS) Application Note AN325 Revision: Rev.1.0 RF and Protection Devices

Edition Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

Application Note AN325 Revision History: Previous Revision: None Page Subjects (major changes since last revision) Trademarks of Infineon Technologies AG AURIX, C166, CanPAK, CIPOS, CIPURSE, EconoPACK, CoolMOS, CoolSET, CORECONTROL, CROSSAVE, DAVE, DI-POL, EasyPIM, EconoBRIDGE, EconoDUAL, EconoPIM, EconoPACK, EiceDRIVER, eupec, FCOS, HITFET, HybridPACK, I²RF, ISOFACE, IsoPACK, MIPAQ, ModSTACK, my-d, NovalithIC, OptiMOS, ORIGA, POWERCODE, PRIMARION, PrimePACK, PrimeSTACK, PRO-SIL, PROFET, RASIC, ReverSave, SatRIC, SIEGET, SINDRION, SIPMOS, SmartLEWIS, SOLID FLASH, TEMPFET, thinq!, TRENCHSTOP, TriCore. Other Trademarks Advance Design System (ADS) of Agilent Technologies, AMBA, ARM, MULTI-ICE, KEIL, PRIMECELL, REALVIEW, THUMB, µvision of ARM Limited, UK. AUTOSAR is licensed by AUTOSAR development partnership. Bluetooth of Bluetooth SIG Inc. CAT-iq of DECT Forum. COLOSSUS, FirstGPS of Trimble Navigation Ltd. EMV of EMVCo, LLC (Visa Holdings Inc.). EPCOS of Epcos AG. FLEXGO of Microsoft Corporation. FlexRay is licensed by FlexRay Consortium. HYPERTERMINAL of Hilgraeve Incorporated. IEC of Commission Electrotechnique Internationale. IrDA of Infrared Data Association Corporation. ISO of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB of MathWorks, Inc. MAXIM of Maxim Integrated Products, Inc. MICROTEC, NUCLEUS of Mentor Graphics Corporation. MIPI of MIPI Alliance, Inc. MIPS of MIPS Technologies, Inc., USA. murata of MURATA MANUFACTURING CO., MICROWAVE OFFICE (MWO) of Applied Wave Research Inc., OmniVision of OmniVision Technologies, Inc. Openwave Openwave Systems Inc. RED HAT Red Hat, Inc. RFMD RF Micro Devices, Inc. SIRIUS of Sirius Satellite Radio Inc. SOLARIS of Sun Microsystems, Inc. SPANSION of Spansion LLC Ltd. Symbian of Symbian Software Limited. TAIYO YUDEN of Taiyo Yuden Co. TEAKLITE of CEVA, Inc. TEKTRONIX of Tektronix Inc. TOKO of TOKO KABUSHIKI KAISHA TA. UNIX of X/Open Company Limited. VERILOG, PALLADIUM of Cadence Design Systems, Inc. VLYNQ of Texas Instruments Incorporated. VXWORKS, WIND RIVER of WIND RIVER SYSTEMS, INC. ZETEX of Diodes Zetex Limited. Last Trademarks Update 2011-11-11 Application Note AN325, Rev.1.0 3 / 25

Table of Content BGA824N6 Introduction of Global Navigation Satellite Systems (GNSS) 1 Introduction of Global Navigation Satellite Systems (GNSS)... 5 2 BGA824N6 Overview... 8 2.1 Features... 8 2.2 Key Applications of BGA824N6... 8 2.3 Description... 8 3 Application Circuit and Performance Overview... 10 3.1 Summary of Measurement Results... 10 3.2 Summary BGA824N6 as 1550-1615 MHz LNA for GNSS... 13 3.3 Schematics and Bill-of-Materials... 14 4 Measurement Graphs... 15 5 Evaluation Board and Layout Information... 22 6 Authors... 24 List of Figures Figure 1 BGA824N6 TSNP-6-2 leadless Package size... 6 Figure 2 BGA824N6 in TSNP-6-2... 8 Figure 3 Equivalent Circuit of BGA824N6... 9 Figure 4 Package and pin connections of BGA824N6... 9 Figure 5 Schematics of the BGA824N6 Application Circuit... 14 Figure 6 Power gain of BGA824N6 for COMPASS, Galileo, GPS and GLONASS bands... 15 Figure 7 Narrowband power gain of BGA824N6 for COMPASS, Galileo, GPS and GLONASS bands... 15 Figure 8 Noise figure of BGA824N6 for COMPASS, Galileo, GPS and GLONASS bands... 16 Figure 9 Input matching of BGA824N6 for COMPASS, Galileo, GPS and GLONASS bands... 16 Figure 10 Input matching smith chart for COMPASS, Galileo, GPS and GLONASS bands... 17 Figure 11 Output matching of BGA824N6 for COMPASS, Galileo, GPS and GLONASS bands... 17 Figure 12 Output matching smith chart for COMPASS, Galileo, GPS and GLONASS bands... 18 Figure 13 Reverse isolation of BGA824N6 for COMPASS, Galileo, GPS and GLONASS bands... 18 Figure 14 Stability factor k of BGA824N6 upto 10GHz... 19 Figure 15 Stability factor µ1 of BGA824N6 upto 10GHz... 19 Figure 16 Stability factor µ2 of BGA824N6 upto 10GHz... 20 Figure 17 Input 1 db compression point of BGA824N6 at supply voltage of 2.8V for COMPASS, Galileo, GPS and GLONASS bands... 20 Figure 18 Carrier and intermodulation products of BGA824N6 for GPS band at Vcc=2.8V... 21 Figure 19 Carrier and intermodulation products of BGA824N6 for GLONASS band at Vcc=2.8V... 21 Figure 20 Photo Picture of Evaluation Board (overview) <PCB Marking Myymmdd Rev. x.x>... 22 Figure 21 Photo Picture of Evaluation Board (detailed view)... 22 Figure 22 PCB Layer Information... 23 List of Tables Table 1 Pin Assignment of BGA824N6... 9 Table 2 Pin Assignment of BGA824N6... 9 Table 3 Electrical Characteristics for COMPASS/Galileo at Vcc = Vpon = 2.8 V... 10 Table 4 Electrical Characteristics for GPS at Vcc = Vpon = 2.8 V... 11 Table 5 Electrical Characteristics for GLONASS at Vcc = Vpon = 2.8 V... 12 Table 6 Bill-of-Materials... 14 Application Note AN325, Rev.1.0 4 / 25

Introduction of Global Navigation Satellite Systems (GNSS) 1 Introduction of Global Navigation Satellite Systems (GNSS) The BGA824N6 is a front-end Low Noise Amplifier (LNA) for Global Navigation Satellite Systems (GNSS) application. It is based on Infineon Technologies B7HF Silicon-Germanium (SiGe) technology, enabling a cost-effective solution in a TSNP-6-2 leadless package with ultra low noise figure, high linearity, low current consumption and high gain, over a wide range of supply voltages from 1.5 V up to 3.6 V. All these features make BGA824N6 an excellent choice for GNSS LNA as it improves sensitivity, provide greater immunity against out-of-band jammer signals, reduces filtering requirement and hence the overall cost of the GNSS receiver. The GNSS satellites are at an orbit altitude of more than 20,000 km away from earth s surface and transmit power in the range of +47 dbm. After taking losses (atmospheric, antenna etc.) into account, the received signal strength at the GNSS device input is very low in the range of -130 dbm. The ability of the GNSS device to receive such low signal strength and provide meaningful information to the end-user depends strongly on the noise figure of the GNSS receives chain. This ability which is called receiver sensitivity can be improved by using a low-noise amplifier with low noise figure and high gain at the input of the receiver chain. The improved sensitivity results in a shorter Time-To-First-Fix (TTFF), which is the time required for a GNSS receiver to acquire satellite signals and navigation data, and calculate a position. Noise figure of the LNA defines the overall noise figure of the GNSS receiver system. This is where BGA824N6 excels by providing noise figure as low as 0.55 db and high gain of 17 db, thereby improving the receiver sensitivity significantly. The ever growing demand to integrate more and more functionality into one device leads to many challenges when transmitter/receiver has to work simultaneously without degrading the performance of each other. In today s smart-phones a GNSS receiver simultaneously coexists with transceivers in the GSM/EDGE/UMTS/LTE bands. These 3G/4G transceivers transmit high power in the range of +24 dbm which due to insufficient isolation couple to the GNSS receiver. The cellular signals can mix to produce Intermodulation products exactly in the GNSS receiver frequency band. For example, GSM 1712.7 MHz mixes with UMTS 1850 MHz to produce third-order-product exactly at GPS. To quantify the effect, BGA824N6 shows out-of-band input IP3 at GPS of +7 dbm as a result of frequency mixing between GSM Application Note AN325, Rev.1.0 5 / 25

Introduction of Global Navigation Satellite Systems (GNSS) 1712.7 MHz and UMTS 1850 MHz with power levels of -20 dbm. Due t this high out-of-band input 3 rd order intercept point (IIP3), BGA824N6 is especially suitable for the GPS function in mobile phones. Figure 1 BGA824N6 TSNP-6-2 leadless Package size As the industry inclines toward assembly miniaturization and also surface mount technology matures, there is a desire to have smaller and thinner components. This is especially the case with portable electronics where higher circuit density allows device design flexibility and also optimum use of the limited space available. BGA824N6 has a small package with dimensions of 0.70mm x 1.1mm x 0.375mm and it requires only one external component at its input, the inductor providing input matching. The DC block at input is optional as it is usually provided by the pre-filter before the LNA in many GPS applications. All the device/phone manufacturers implement very good power supply filtering on their boards so that the RF bypass capacitor mentioned in this application circuit may not be needed in the end. The minimal number of external SMD components reduces the application bill of materials, assembly complexity and the PCB area thus making it an ideal solution for compact and cost-effective GNSS LNA. The output of the BGA824N6 is internally matched to 50 Ω, and a DC blocking capacitor is integrated on-chip, thus no external component is required at the output Application Note AN325, Rev.1.0 6 / 25

Introduction of Global Navigation Satellite Systems (GNSS) The device also integrates an on-chip ESD protection which can resist until 2 kv (referenced to Human Body Model) in all pins. The integrated power on/off feature provides for low power consumption and increased stand-by time for GNSS handsets. Moreover, the low current consumption (3.8 ma) makes the device suitable for portable technology like GNSS receivers and mobiles phones. The Internal circuit diagram of the BGA824N6 is presented in Figure 3. Table 1 show the pin assignment of BGA824N6. Table 2 shows the truth table to turn on/off BGA824N6 by applying different voltage to the PON pin. Application Note AN325, Rev.1.0 7 / 25

BGA824N6 Overview 2 BGA824N6 Overview 2.1 Features High insertion power gain: 17.0 db Out-of-band input 3rd order intercept point: +7 dbm Input 1 db compression point: -6 dbm Low noise figure: 0.55 db Low current consumption: 3.8 ma Operating frequencies: 1550-1615 MHz Supply voltage: 1.5 V to 3.6 V Digital on/off switch (1V logic high level) Ultra small TSNP-6-2 leadless package (footprint: 0.7 x 1.1 mm2) B7HF Silicon Germanium technology Figure 2 BGA824N6 in TSNP-6-2 RF output internally matched to 50 Ω Only 1 external SMD component necessary 2kV HBM ESD protection (including AI-pin) Pb-free (RoHS compliant) package 2.2 Key Applications of BGA824N6 Ideal for all Global Navigation Satellite Systems (GNSS) like GPS (Global Positioning System) working in the L1 band at 1575.42 MHz GLONASS (Russian GNSS) working in the L1 band from 1598.06 MHz to 1605.38 MHz Galileo (European GNSS) working in the E2-L1-E1 band from 1559 MHz to 1592 MHz COMPASS (Chinese Beidou Navigation System) working in E2 band at 1561.10 MHz and E1 band at 1589.74 MHz 2.3 Description The BGA824N6 is a front-end low noise amplifier for Global Navigation Satellite Systems (GNSS) from 1550 MHz to 1615 MHz like GPS, GLONASS, Beidou, Galileo and others. The LNA provides 17.0 db gain and 0.55 db noise figure at a current consumption of 3.8 ma in the application configuration described in Chapter 3. The BGA824N6 is based upon Infineon Technologies B7HF Silicon Germanium technology. It operates from 1.5 V to 3.6 V supply voltage. Application Note AN325, Rev.1.0 8 / 25

BGA824N6 Overview Figure 3 Equivalent Circuit of BGA824N6 3 4 2 5 1 6 Bottom View Top View Figure 4 Package and pin connections of BGA824N6 Table 1 Pin Assignment of BGA824N6 Pin No. Symbol Function 1 GND Ground 2 VCC DC supply 3 AO LNA output 4 GND Ground 5 AI LNA input 6 PON Power on control Table 2 LNA Mode Pin Assignment of BGA824N6 Symbol ON/OFF Control Voltage at PON pin ON PON, on 1.0 V VCC OFF PON, off 0 V 0.4 V Min Max Application Note AN325, Rev.1.0 9 / 25

Application Circuit and Performance Overview 3 Application Circuit and Performance Overview Device: BGA824N6 Application: Temparature Variation of high-linearity Low Noise Ampifier for Global Navigation Satellite Systems (GNSS) PCB Marking: BGA824N6 3.1 Summary of Measurement Results Table 3 Electrical Characteristics for COMPASS/Galileo at Vcc = Vpon = 2.8 V Parameter Symbol Value Unit Comment/Test Condition Frequency Range Freq 1559-1593 MHz DC Voltage Vcc 2.8 V Temparature T -40-15 0 25 85 C DC Current Icc 4.1 4.1 4 3.9 3.7 ma Gain G 18 17.7 17.5 17.2 16.2 db Noise Figure NF 0.4 0.47 0.52 0.59 0.88 db Input Return Loss Output Return Loss Reverse Isolation RLin 14.5 14.2 14 13.6 12 db RLout 26.4 25.1 24.3 23.6 23 db IRev 23.1 23.1 23.2 23.2 23.2 db PCB and SMA losses 0.05dB are substracted Input P1dB IP1dB -7.3-7.2-7.2-7.2-7.1 dbm f galileo = 1559 MHz Output P1dB OP1dB 10.7 10.4 10.3 10 9.3 dbm Input IP3 In-band Output IP3 In-band IIP3 3.3 3 2.7 1.6 0.1 dbm OIP3 21.1 20.7 20.2 19.8 17.3 dbm Stability k >1 -- f 1gal = 1559 MHz f 2gal = 1560MHz Input power= -30dBm Unconditionnally Stable from 0 to 10GHz Application Note AN325, Rev.1.0 10 / 25

Application Circuit and Performance Overview Table 4 Electrical Characteristics for GPS at Vcc = Vpon = 2.8 V Parameter Symbol Value Unit Comment/Test Condition Frequency Range Freq 1575.42 MHz DC Voltage Vcc 2.8 V DC Voltage Temparature T -40-15 0 25 85 C DC Current Icc 4.1 4.1 4 3.9 3.7 ma Gain G 17.9 17.6 17.4 17 16 db Noise Figure NF 0.43 0.48 0.52 0.59 0.87 db Input Return Loss RLin 15.5 15.1 14.9 14.5 12.7 db PCB and SMA losses 0.05dB are substracted Output Return Loss Reverse Isolation RLout 21.8 21.1 20.5 20 19.7 db IRev 23 23.1 23.1 23.2 23.2 db Input P1dB IP1dB -7.2-7.1-7.1-7.1-7 dbm f galileo = 1575.42 MHz Output P1dB OP1dB 10.6 10.4 10.3 10.1 9.3 dbm Input IP3 In-band Output IP3 In-band LTE band-13 2 nd Harmonic Input IP3 out-of-band Output IM2 Out-of-band Output IM2 Out-of-band IIP3 3.7 3.4 3.1 2 0.5 dbm OIP3 21.6 21 20.4 19 16.5 dbm H2 input referred -28.2 dbm IIP3 OOB 11.3 10.7 10.1 8.2 5.9 dbm IM2-36.6 dbm IM2-35.9 dbm f 1gps = 1575 MHz f 2gps = 1576MHz Input power= -30dBm f IN = 787.76 MHz P IN = -25 dbm f H2 = 1575.52 MHz f 1 = 1712.7 MHz f 2 = 1850 MHz Input power = -20dBm f IIP3 = 1575.4 MHz f 1 = 827 MHz, P IN1 = -28 dbm f 2 = 2402 MHz, P IN2 = -28 dbm f 1 = 897 MHz, P IN1 = -28 dbm f 2 = 2472 MHz, P IN2 = -28 dbm Stability k >1 -- Unconditionnally Stable from 0 to 10GHz Application Note AN325, Rev.1.0 11 / 25

Application Circuit and Performance Overview Table 5 Electrical Characteristics for GLONASS at Vcc = Vpon = 2.8 V Parameter Symbol Value Unit Comment/Test Condition Frequency Range Freq 1598-1606 MHz DC Voltage Vcc 2.8 V Temparature T -40-15 0 25 85 C DC Current Icc 4.1 4.1 4 3.9 3.7 ma Gain G 17.7 17.4 17.2 16.9 15.9 db Noise Figure NF 0.42 0.47 0.53 0.61 0.9 db Input Return Loss RLin 16.9 16.5 16.3 15.9 13.9 db PCB and SMA losses 0.05dB are substracted Output Return Loss Reverse Isolation RLout 17.1 16.7 16.3 16 15.7 db IRev -23-23.1-23.1-23.1-23.2 db Input P1dB IP1dB -6.9-6.8-6.8-6.7-6.4 dbm F GLONASS = 1605.38 MHz Output P1dB OP1dB 10.8 10.6 10.4 10.2 9.5 dbm Input IP3 In-band IIP3 4 3.7 3.3 2.4 0.9 dbm Output IP3 In-band OIP3 21.7 21.1 20.5 19.3 16.8 dbm Stability k >1 -- f GLONASS = 1602 MHz f GLONASS = 1603MHz Input power= -30dBm Unconditionnally Stable from 0 to 10GHz Application Note AN325, Rev.1.0 12 / 25

Application Circuit and Performance Overview 3.2 Summary BGA824N6 as 1550-1615 MHz LNA for GNSS This application note presents the high linearity low noise amplifier for Global Navigation Satellite Systems (GNSS) using BGA824N6. The circuit requires only one 0402 passive component. It has in band gain of 17dB. The gain flatness over the whole temperature range (-40 C to 85 C) is less than 2dB. The circuit achieves input return loss better than 12dB and output return loss more than 15.7 db for the whole temperature range. In room temperature noise figure is 0.6dB (SMA and PCB losses are subtracted) and it increases to 0.93dB for 85 C. Furthermore, the circuit is unconditionally stable till 10 GHz. At 1575 MHz, using two tones spacing of 1 MHz, the output third order intercept point OIP3 reaches 19 dbm. OIP3 varies form 16.5 dbm to 21.6 dbm for the whole frequency range. Input P1dB of the GNSS LNA is about -7dBm and it is almost constant over the whole temaprature range. The out of band OIP3 reaches 8.2 dbm at room temperature at 1575.4 MHz frequency. And this circuit shows very good H2 performance -28.2 dbm for GPS frequency. Application Note AN325, Rev.1.0 13 / 25

Application Circuit and Performance Overview 3.3 Schematics and Bill-of-Materials Figure 5 Schematics of the BGA824N6 Application Circuit Table 6 Bill-of-Materials Symbol Value Unit Size Manufacturer Comment C2 (optional) 1 nf 0402 Various DC block C2 (optional) >10 nf 0402 Various RF bypass L1 6.8 nh 0402 Murata LQW type Input matching N1 BGA824N6 TSNP-6-2 Infineon SiGe LNA Application Note AN325, Rev.1.0 14 / 25

S21 (db) S21 (db) BGA824N6 Measurement Graphs 4 Measurement Graphs 25 15 5 17.95 db Wideband Gain for different temparature 17.86 db 17.69 db T= -40 C T= 0 C T= 25 C T= 85 C -5-15 16.17 db 16.09 db 15.93 db -25 0 1 2 3 4 5 6 Frequency (GHz) Figure 6 Power gain of BGA824N6 for COMPASS, Galileo, GPS and GLONASS bands 20 19 18 17.466 db Narroband Gain for different temparature 17.954 db 17.204 db 17.86 db 17.687 db T= -40 C T= 0 C T= 25 C T= 85 C 17 16 15 16.165 db 17.169 db 17.083 db 16.087 db 16.916 db 15.934 db 1.5 1.53 1.56 1.59 1.62 1.65 Frequency (GHz) Figure 7 Narrowband power gain of BGA824N6 for COMPASS, Galileo, GPS and GLONASS bands Application Note AN325, Rev.1.0 15 / 25

S11 (db) NF (db) BGA824N6 Measurement Graphs 1 Noise figure for different temparature 0.8 0.860 db 0.873 db 0.594 db 0.900 db 0.614 db 0.6 0.4 0.2 0.392 db 0.429 db 0.423 db T= -40 C T= 0 C T= 25 C T= 85 C 0 1.559 1.567 1.575 1.583 1.591 1.599 1.607 1.615 Frequency (GHz) Figure 8 Noise figure of BGA824N6 for COMPASS, Galileo, GPS and GLONASS bands -5 Input return loss for different temparature T= -40 C -10-13.59 db -12.03 db -12.72 db -13.89 db T= 0 C T= 25 C T= 85 C -15.9 db -15-14.46 db -20-14.49 db -15.46 db -16.93 db 1.5 1.53 1.56 1.59 1.62 1.65 Frequency (GHz) Figure 9 Input matching of BGA824N6 for COMPASS, Galileo, GPS and GLONASS bands Application Note AN325, Rev.1.0 16 / 25

0 BGA824N6 Measurement Graphs 1.0 1.0 S22 (db) -1.0 0.2 0.4 0.6 0.8 2.0 3.0 4.0 5.0 10.0 Input matching for different temaparature 0.6 0.8 Swp Max 1.615GHz 2.0 0.2 0.4 r 0.665 x -0.039 r 0.752 x 0.032 3.0 T= -40 C 4.0 5.0 10.0 T= 0 C T= 25 C -0.2 r 0.618 x -0.140-0.4 r 0.678 x -0.101 T= 85 C -3.0-10.0-5.0-4.0-2.0-0.6-0.8 Swp Min 1.559GHz Figure 10 Input matching smith chart for COMPASS, Galileo, GPS and GLONASS bands -10-15 -20-25 -30-35 Output return loss for different temparature T= -40 C T= 0 C T= 25 C T= 85 C -22.95 db -26.37 db -19.66 db -24.31 db -20.49 db -15.69 db -21.83 db -16.29 db -17.1 db 1.5 1.53 1.56 1.59 1.62 1.65 Frequency (GHz) Figure 11 Output matching of BGA824N6 for COMPASS, Galileo, GPS and GLONASS bands Application Note AN325, Rev.1.0 17 / 25

0 BGA824N6 Measurement Graphs 1.0 1.0 S12 (db) -1.0 0.2 0.4 0.6 0.8 2.0 3.0 4.0 5.0 10.0 Output matching for different temparature 0.6 0.8 Swp Max 1.615GHz 2.0 0.2 0.4 r 1 x -0.0962 r 1.03 x -0.141 3.0 4.0 5.0 T= -40 C 10.0 T= 0 C T= 25 C -0.2-0.4 r 1.05 x -0.284 r 1.09 x -0.336-2.0-3.0-10.0 T= 85 C -5.0-4.0-0.6-0.8 Swp Min 1.559GHz Figure 12 Output matching smith chart for COMPASS, Galileo, GPS and GLONASS bands -22-22.5-23 -23.117 db Revese isolation for different temparature -23.057 db -23.039 db T= -40 C T= 0 C T= 25 C T= 85 C -23.5-23.248 db -23.22 db -23.202 db -24 1.5 1.53 1.56 1.59 1.62 1.65 Frequency (GHz) Figure 13 Reverse isolation of BGA824N6 for COMPASS, Galileo, GPS and GLONASS bands Application Note AN325, Rev.1.0 18 / 25

S21 (db) S21 (db) BGA824N6 Measurement Graphs 5 4 3 2 Stability K factor for different temparature 1.734 GHz 1.261 Stability K factor at T= -40 C Stability K factor at T= 0 C Stability K factor at T= 25 C Stability K factor at T= 85 C 1 0 1.566 GHz 1.144 0 2 4 6 8 10 Frequency (GHz) Figure 14 Stability factor k of BGA824N6 upto 10GHz 2 1.5 Stability Mu1 factor for different temparature 2.982 GHz 1.114 Stability Mu1 factor at T= -40 C Stability Mu1 factor at T= 0 C Stability Mu1 factor at T= 25 C Stability Mu1 factor at T= 85 C 1 3.08 GHz 1.09 0.5 0 2 4 6 8 10 Frequency (GHz) Figure 15 Stability factor µ1 of BGA824N6 upto 10GHz Application Note AN325, Rev.1.0 19 / 25

Gain (db) S21 (db) BGA824N6 Measurement Graphs 2 1.5 Stability Mu2 factor for different temparature Stability Mu2 factor at T= -40 C Stability Mu2 factor at T= 0 C Stability Mu2 factor at T= 25 C Stability Mu2 factor at T= 85 C 5.56 GHz 1.069 1 5.521 GHz 1.039 0.5 0 2 4 6 8 10 Frequency (GHz) Figure 16 Stability factor µ2 of BGA824N6 upto 10GHz 19 18-30 dbm 17.19 db Input P1dB compression point at T= 25 C -30 dbm 17.12 db -7.238 dbm 16.36 db 17 16 15 14-30 dbm 16.95 db P1dB at Vcc=2.8V GPS (1575.42 MHz) P1dB at Vcc=2.8V GLONASS (1605.38 MHz) P1dB at Vcc=2.8V Compass (1559 MHz) -6.692 dbm 16.11 db -7.077 dbm 16.29 db -30-25 -20-15 -10-5 0 Power (dbm) Figure 17 Input 1 db compression point of BGA824N6 at supply voltage of 2.8V for COMPASS, Galileo, GPS and GLONASS bands Application Note AN325, Rev.1.0 20 / 25

Power (dbm) Power (dbm) BGA824N6 Measurement Graphs 0 Intermodulation for GPS Band at T= 25 C -13.09 db 1.576 GHz -13.08 db -50 1.574 GHz -77.02 db 1.577 GHz -87.27 db -100-150 1.573 1.574 1.575 1.576 1.577 1.578 Frequency (GHz) Figure 18 Carrier and intermodulation products of BGA824N6 for GPS band 0 Intermodulation for GLONASS Band at T= 25 C 1.602 GHz -13.14 db 1.603 GHz -13.24 db -50 1.601 GHz -77.93 db 1.604 GHz -89.26 db -100-150 1.6 1.601 1.602 1.603 1.604 1.605 Frequency (GHz) Figure 19 Carrier and intermodulation products of BGA824N6 for GLONASS band Application Note AN325, Rev.1.0 21 / 25

5 Evaluation Board and Layout Information In this application note, the following PCB is used: PCB Marking: BGA824N6 PCB material: FR4 r of PCB material: 4.3 BGA824N6 Evaluation Board and Layout Information Figure 20 Photo Picture of Evaluation Board (overview) <PCB Marking Myymmdd Rev. x.x> Figure 21 Photo Picture of Evaluation Board (detailed view) Application Note AN325, Rev.1.0 22 / 25

Evaluation Board and Layout Information Vias RO4003, 0.2mm Copper 35µm FR4, 0.8mm Figure 22 PCB Layer Information Application Note AN325, Rev.1.0 23 / 25

Authors 6 Authors Moakhkhrul Islam, Application Engineer of Business Unit RF and Protection Devices. Dr. Chih-I Lin, Senior Staff Engineer of Business Unit RF and Protection Devices. 7 Remark The graphs are generated with the simulation program AWR Microwave Office. Application Note AN325, Rev.1.0 24 / 25

w w w. i n f i n e o n. c o m Published by Infineon Technologies AG AN325