EE0207 ELECTRONIC DEVICES LESSON PLAN SEMICONDUCTORS Semiconductors devices: Field intensity - potential energy - mobility - conductivity - electrons holes - charge density in semiconductors - electrical properties of silicon germanium - diffusion - potential variation within graded semiconductors. Energy Bs theory of Solids Distinction between Conductors, Semiconductors Insulators - Properties of Semiconductors Day Topics to be covered Text Chap.no Program book & Page Outcome No. 1. Introduction - T1 C5,95 Semiconductors Underst the devices theory of a).an ability to 2. Field intensity - potential T1 C3,52 semiconductor apply knowledge energy - mobility - of mathematics, conductivity science, 3. Electrons holes - T1 C5,95 engineering. charge density in semiconductors Cycle 4. Electrical properties of T1 C5,97,10 test silicon germanium - 7 I,Model diffusion Exam 5. Potential variation within T1 C5,109 graded semiconductors 6. Energy Bs theory of T2 C1,4 Solids 1
7. Distinction between T2 C1,7 Conductors, Semiconductors Insulators 8. Properties of T1 C5,98 Semiconductors. 9. Problems R2 C2,37,47 10. Revision CHARACTERISTICS OF DIODES Working description of a PN diode- Diode Equation Minority carrier Concenteration Varactor Diode Avalanche Zener Breakdown Zener diode Tunnel Diode PIN diode Photo diode Photo voltaic cell Light emitting diode Light dependant resistor- Thermistors Zener Diode Voltage Regulator. Day Topics to be covered Text book Chap.no & Program Outcome Page No. 11. Working T1 C6,117 description of a PN a)an ability to apply diode knowledge of 12. Diode Equation - T2 C2,27 mathematics, Minority carrier Underst the science, Concenteration theory of PN engineering. 13. Varactor Diode - T2 C2&C21- junction diode Avalanche Zener 43,747 b). An ability to Breakdown design conduct 14. Zener diode - Tunnel T2 C2 &C21- Diode 41,752 as to analyze 15. PIN diode - Photo T2 C20,727 interpret results. diode 16. Photo voltaic cell - T1,T2 C19&C20-2
Light emitting diode 587,716 17. Light dependant resistor- Thermistors 18. Zener Diode Voltage Regulator 19. Revision T1 C10,287 T1,T2 C6&C17-143,564 Cycle test II,Model Exam TRANSISTORS Principle of transistor action Current Components Cut off, Active saturation regions of a transistor CE,CB,CC Configurations- Input output CE, CB CC configurations Ebers Moll model of a BJT Evaluation of H- parameters Hybrid pi model Transistor as a switch Use of a heat sink Day Topics to be Text book Chap.no Program Outcome covered & Page No. Principle of T2 C4,99 20. transistor action b) An ability to 21. Current T1,T2 C9- design conduct Components - Cut 222,101 off, Active Know the as to analyze saturation regions of basics of BJT interpret results. a transistor operation 22. CE,CB,CC T2 C4- Configurations 112,109,1 e).an ability to 15 identify, formulate, 23. Input output T2 C4-113 solve engineering CE configurations problems 24. Input Output T2 C4-3
109,115 CB CC Configurations 25. Ebers Moll model T1 C9,248 of a BJT 26. Evaluation of H- T1 C11,302 parameters 27. Hybrid pi model - T1 C13&C9- Transistor as a 369,257 switch - Use of a heat sink. 28. Problems T2 C6,200 29. Revision FIELD EFFECT TRANSISTORS Constructional features of a field effect transistor theory of operation current equations VVR operation of a FET- Junction field effect transistor Pinch off voltage JFET volt-ampere characteristics MOSFET Working V-I Characteristics Depletion enhancement types Threshold Voltage Gate capacitance MOS as a charge transferring Device CCD -Power MOSFET-construction UJT. Day Topics to be Text book Chap.no Program Outcome covered & Page No. 30. Constructional T2 C9,257 features of a field effect transistor - b). An ability to theory of operation design conduct current equations 1.Know the basics as to analyze 31. VVR operation of a T1 C14-413 of FET operation interpret results. 4
FET- Junction field effect transistor 2.Gain a thorough 32. Pinch off voltage - T1 C14- understing of JFET volt-ampere 388,390 operation characteristics MOSFET - Working V-I T1 C14,396 SCR, TRIAC & DIAC, UJT Characteristics various photo Depletion enhancement types - T1 C14-398,397 conductive devices. Threshold Voltage Gate capacitance - T1 C14,396 MOS as a charge transferring Device CCD -Power T1 C14,396 MOSFET Construction UJT T2 C19,696 THYRISTORS AND IC FABRICATION Working V-I characteristics features of Silicon Controlled Rectifier, DIAC, TRIAC, GTO - Device Technology Planar process Diffusion Ion Implantation Vapour Deposition NMOS, PMOS Fabrication Twin Tub Process of CMOS Thick film thin film Technology. Day Topics to be Text book Chap.no & Program Outcome covered Page No. 38. Working V-I R2 C5,152 characteristics features of Silicon a).an ability to Controlled Rectifier apply knowledge of 5
39. DIAC TRIAC, R2 C5-155,154 Model Exam To learn the basic knowledge of IC mathematics, science, 40. GTO - Device T2 C19,695 fabrication. engineering. Technology 41. Planar process - R2 C19,776 b)an ability to Diffusion design conduct 42. Ion Implantation - R2 C19,789 Vapour Deposition as to analyze 43. NMOS, PMOS R2 C19,791 interpret results. Fabrication 44. Twin Tub Process R2 C19,806 of CMOS -. 45. Thick film thin R2 C19,812 film Technology 46. Revision TEXT BOOKS 1. Jacob. Millman, Christos C.Halkias, Electronic Devices Circuits, Tata McGraw Hill Publishing Limited, New Delhi, 2003. 2. David A.Bell, Electronic Devices Circuits, Prentice Hall of India Private Limited, New Delhi, 2003. REFERENCE BOOKS 1. Street Man, Solid State Electronic Devices, Prentice Hall Of India, Edition 1995. 2. Mathur Kulshrestha Chadha Electron devices Applications Integrated circuits, Umesh 6
Publications, 1986. 3. Thomas L. Floyd, Electron Devices, Charles & Messil Publications, 1989 7