SCT616/816 Series 16A SCRs Circuit Diagram TO-B(Non-Ins) Description With high ability to withstand the shock loading of large current, SCT616/816 series of silicon controlled rectifiers provide high dv/dt rate with strong resistance to electromagnetic interference. They are especially recommended for use on solid state relay, motorcycle, power charger, T-tools etc. Maximum Ratings: Characteristics Symbol Condition Max. Units Storage junction temperature range TJ - -4 to +15 C Operating junction temperature range T stg - -4 to +15 C Repetitive peak off-state voltage VDRM - 6/8 V Repetitive peak reverse voltage V RRM - 6/8 V Non repetitive peak off-state voltage VDSM - VDRM +1 V Non repetitive peak reverse voltage V RSM - V RRM +1 V RMS on-state current I (TRMS) TO-B(Non-Ins)(T C=11 ) 16 A Non repetitive surge peak on-state current - I (tp=1ms) TSM 18 A I t value for fusing (tp=1ms) I t - 16 A s Critical rate of rise of on-state current (IG= IGT) di/dt - 5 A/μs Peak gate current IGM - 4 A Average gate power dissipation P G(AV) - 1 W Peak gate power PGM - 5 W
Electrical Characteristics(Tj=5 unless otherwise specified) Symbol Test Condition Value MIN. TYP. MAX. Unit IGT V D=1V R L=33Ω - - 15 ma VGT - - 1.3 V V GD VD=VDRM Tj=15 RL=3.3KΩ. - - V I L I G=1.I GT - - 6 ma I H I T=5mA - - 5 ma dv/dt VD=/3VDRM Gate Open Tj=15 - - V/μs Static Characteristics Symbol Condition Max. Units VTM I T=3A tp=38μs,tj=5 1.55 V I DRM V D=V DRM V R=V RRM, Tj=5 5 μa I RRM VD=VDRM VR=VRRM, Tj=15 ma Thermal Resistances Symbol Condition Value Units Rth(j-c) Junction to case(ac) TO-B(Non-Ins) 1.1 /W Ordering Information SMC Diode Solutions SCRs 6:VDRM/VRRM 6V 8:VDRM/VRRM 8V S CT 6 16 B B:TO-B(Non-Ins) I T(RMS):16A Device Package Shipping SCT616/816 Series TO-B(Non-Ins) 5pcs/ Tube
Marking Diagram Where XXXXX is YYWWL SCT616B YY WW L = Part name = Year = Week = Lot Number Mechanical Dimensions TO-B(Non-Ins) SYMBOL Millimeters Inches Min. Typ. Max. Min. Typ. Max. A B 4.4.61 4.6.88.17. 3 C.46.7.1 4 C 1.1 1.3.4 8 C3.4.7.9 8 4 D 8.6 9.7.33 9 E 9.6 1.4.37 F 6. 6.6.4 8 G.54 4.1 H 8. 9.8 1.1 L1 3.75.14 L 1.14 1.7.4 8 L3.65.95.1 5 V1 45 4 45.18.3 1. 5.5 8.1.38 7.4.6 9 1.17 3.6.11 7 6 Ratings and Characteristics Curves FIG.1 Maximum power dissipation versus RMS on-state current P(w) 15 FIG.: RMS on-state current versus case temperature 4 16 IT(RMS) (A) α=18 TO-B (Non-Ins) 1 1 5 IT(RMS) (A) Tc ( ) 4 8 1 16 5 5 75 1 15 8 4
FIG.3: Surge peak on-state current versus number of cycles 1 18 15 1 9 6 3 ITSM (A) tp=1ms One cycle Number of cycles 1 1 1 1 1 FIG.4: On-state characteristics (maximum values) 1 ITM (A) Tj=5 Tj=15 VTM (V) 1 1 3 4 5 FIG.5: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp<1ms, and corresponging value of I t (di/dt<5a/μs) ITSM (A), I t (A s) 1 FIG.6: Relative variations of gate trigger current, holding current and latching current versus junction temperature IGT,IH,IL(Tj)/IGT,IH,IL(Tj=5 ) 3..5 ITSM. IGT 1 di/dt I t 1.5 1. IH&IL.5 tp(ms) 1.1.1 1 1 Tj( ). -4-4 6 8 1 1 14
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