Established : -9- Revised : -5-9 Doc No. TT-EA- SC7L SC7L Asymmetric Dual Silicon N-ch Power 5..9 Unit : mm. For DC-DC Converter 7 5 Features Low Drain-source On-state Resistance : RDS(on) typ. FET : m (VGS =.5 V), FET :.9 m (VGS =.5 V) Halogen-free / RoHS compliant (EU RoHS / UL-9 V- / MSL : Level compliant) Marking Symbol : A Packaging Embossed type (Thermo-compression sealing) : pcs / reel (standard). Gate(FET) 5. Source(FET). Drain(FET). Source(FET). Drain(FET) 7. Source(FET). Drain(FET). Gate(FET) Panasonic HSO-F-B JEITA Code Absolute Maximum Ratings Ta = 5 C Parameter Symbol Rating FET FET Unit Internal Circuit Drain to Source Voltage VDS V Gate to Source Voltage VGS V G S S S 7 5 Package limited ID Drain Current A DC * ID 5 Q * * S/D Drain Current (Pulsed) IDp A Ta = 5 C, DC * PD.7.5 Total Power Ta = 5 C, DC Dissipation FET PD W FET Q Tc = 5 C PD 9 Channel to Ambient * Rth(ch-a) 7 5 Thermal Channel to Ambient * G D D D Rth(ch-a) 5 C / W Resistance Channel to Case Rth(ch-c).. Pin Name Channel Temperature Tch 5 Operating ambient temperature Topr - to +5 C Storage Temperature Range Tstg -55 to +5. Gate(FET) 5. Source(FET) Avalanche Current (Single pulse) * IAR A. Drain(FET). Source(FET) Avalanche Energy (Single pulse) * EAR mj. Drain(FET) 7. Source(FET) Note * Device mounted on a glass-epoxy board in Figure. and.. Drain(FET). Gate(FET) * Pulse test : Ensure that the channel temperature does not exceed 5 C * Device mounted on a glass-epoxy board in Figure. * VDD = V, VGS = to V, L =. mh, Tch = 5 C (initial) Outline and Figures FR Glass-Epoxy Board (5. mm 5. mm. mm).7 SS S G S/D. 5.9.5. GDD D D DD G Figure. (FET) Figure. (FET) Figure. (FET, FET) of
Established : -9- Revised : -5-9 Doc No. TT-EA- SC7L Electrical Characteristics Ta = 5 C C FET Parameter Symbol Conditions Min Typ Max Unit Drain-source Breakdown Voltage VDSS ID = ma, VGS = V V Zero Gate Voltage Drain Current IDSS VDS = V, VGS = V A Gate-source Leakage Current IGSS VGS = V, VDS = V A Gate-source Threshold Voltage Vth ID =. ma, VDS = V V Drain-source On-state Resistance RDS(on) ID = A, VGS = V 7 RDS(on) ID = A, VGS =.5 V m Input Capacitance Ciss 7 9 VDS = V, VGS = V Output Capacitance Coss f = MHz Reverse Transfer Capacitance Crss 9 Total Gate Charge Qg. VDD = 5 V, VGS = to.5 V Gate to Source Charge Qgs.5 ID = A Gate to Drain Charge Qgd. Turn-on Delay Time * Turn-off Delay Time * td(on) td(off) VDD = 5 V, VGS = to V VDD = 5 V, VGS = to V 7 Rise Time * Fall Time * tr tf ID = A ID = A pf ns ns nc Gate resistance rg f = 5 MHz. Body Diode Characteristic Parameter Symbol Conditions Min Typ Max Unit Diode Forward Voltage VSD IS = A, VGS = V.. V Note:. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7 Measuring methods for transistors.. * Measurement circuit for Turn-on Delay Time / Rise Time / Turn-off Delay Time / Fall Time FET Parameter Symbol Conditions Min Typ Max Unit Drain-source Breakdown Voltage VDSS ID = ma, VGS = V V Zero Gate Voltage Drain Current IDSS VDS = V, VGS = V A Gate-source Leakage Current IGSS VGS = V, VDS = V A Gate-source Threshold Voltage Vth ID = 5.5 ma, VDS = V. V Drain-source On-state Resistance RDS(on) ID = A, VGS = V.. RDS(on) ID = A, VGS =.5 V.9.5 m Input Capacitance Ciss 9 VDS = V, VGS = V Output Capacitance Coss 57 79 f = MHz Reverse Transfer Capacitance Crss 5 Total Gate Charge Qg 7 VDD = 5 V, VGS = to.5 V Gate to Source Charge Qgs ID = A Gate to Drain Charge Qgd Turn-on Delay Time * Turn-off Delay Time * td(on) td(off) VDD = 5 V, VGS = to V VDD = 5 V, VGS = to V 75 Rise Time * Fall Time * tr tf ID = A ID = A pf ns ns nc Gate resistance rg f = 5 MHz. Body Diode Characteristic Parameter Symbol Conditions Min Typ Max Unit Diode Forward Voltage VSD IS = A, VGS = V.. V Note:. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7 Measuring methods for transistors.. * Measurement circuit for Turn-on Delay Time / Rise Time / Turn-off Delay Time / Fall Time of
Established : -9- Revised : -5-9 Doc No. TT-EA- SC7L * Measurement circuit for Turn-on Delay Time / Rise Time / Turn-off Delay Time / Fall Time VDD = 5 V V V Vin Vin Vin Vout PW = s D.C. %.7 % G 9 % 9 % % D S % FET : ID = A FET : ID = A 9 % Vout td(on) tr td(off) tf of
Established : -9- Revised : -5-9 Doc No. TT-EA- Capacitance C (pf) FET Technical Data ( reference ) ID - VDS......5..5..5.5 V A V.5 V V VDS - VGS A Capacitance - VDS VGS = V ID = A Gate-source Voltage VGS (V) Ciss Coss Crss Drain-source On-state Resistance RDS(on) (m ) Gate-source Voltage VGS (V) Drain current ID(A) ID - VGS RDS(on) - ID.5 V VGS = V SC7L Drain current ID (A) Dynamic Input/Output Characteristics VDD = 5 V Ta = C - C 5 C Gate-source voltage VGS(V). Drain-source Voltage (V) Total Gate Charge Qg (nc) of
Established : -9- Revised : -5-9 Doc No. TT-EA- SC7L Gate-source Threshold Voltage Vth (V) FET Technical Data ( reference ) Total Power Dissipation PD (W) Thermal Resistance Rth ( C/W).5.5.5.5.5 Vth - Ta -5 5 5 Temperature ( C) PD - Ta Measureing on glass epoxy board (5. 5.. mm) 5 5 Temperature Ta ( C) Rth - tsw.. Pulse Width tsw (s) Drain-source On-resistance RDS(on) (m ) Total Power Dissipation PD (W) 5 5 5 5 5 5 RDS(on) - Ta PD - Tc 5 5. -5 5 5 IDp = A.5 V Temperature Tc ( C) Safe Operating Area Operation in this area is limited by RDS(on) Temperature ( C) Ta = 5 C, Glass epoxy board (5. 5.. mm) coatedwith copper foil, which has more than mm. VGS =. V... ms ms ms s DC 5 of
Established : -9- Revised : -5-9 Doc No. TT-EA- Capacitance C (pf) FET Technical Data ( reference ) V V.5 V.5 V ID - VDS.....5..5..5 5.75 A VDS - VGS ID = A.5 A Capacitance - VDS VGS =.5 V Gate-source Voltage VGS (V) Ciss Coss Crss Drain-source On-state Resistance RDS(on) (m ) Gate-source Voltage VGS (V) Drain current ID(A) ID - VGS RDS(on) - ID SC7L.5 V VGS = V Ta = C 5 C Gate-source voltage VGS(V) Dynamic Input/Output Characteristics VDD = 5 V - C. 5 7 Total Gate Charge Qg (nc) of
Established : -9- Revised : -5-9 Doc No. TT-EA- SC7L Thermal Resistance Rth ( C/W) FET Technical Data ( reference ) Gate-source Threshold Voltage Vth (V) Total Power Dissipation PD (W).5.5.5.5.5 Vth - Ta -5 5 5 PD - Ta Measureing on glass epoxy board (5. 5.. mm) 5 5 Temperature ( C) Temperature Ta ( C) Rth - tsw.. Pulse Width tsw (s) Drain-source On-resistance RDS(on) (m ) Total Power Dissipation PD (W) 5 RDS(on) - Ta PD - Tc 5 5. -5 5 5 Temperature Tc ( C) Safe Operating Area IDp = A Operation in this area is limited by RDS(on) Ta = 5 C, Glass epoxy board (5. 5.. mm) coated with copper foil, which has more than mm..5 V Temperature ( C) VGS = V... ms ms ms s DC 7 of
Established : -9- Revised : -5-9 Doc No. TT-EA- SC7L HSO-F-B Unit : mm (7 ) 5.±..9±. 7. +. -.5 5.7 to.5.5±. Land Pattern (Reference) (Unit : mm).7..55. 5.9±..±..5±..±.5.±..5±..55 max (7 ). +. -.5.±..99±..55 max. 7 5.9±...9.9±..±..5 max.±..9.55.5.7.5..5 of
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