FEAURES SYMBOL QUCK REFERENCE DAA Low forward volt drop Fast switching Soft recovery characteristic Reverse surge capability High thermal cycling performance Low thermal resistance a a2 3 k 2 V R = 5 V/ 2 V V F.85 V O(AV) = 3 A RRM =.2 A t rr 28 ns GENERAL DESCRPON PNNNG SO429 (O247) Dual, ultra-fast, epitaxial rectifier diodes intended for use as ouut PN DESCRPON rectifiers in high frequency switched anode mode power supplies. 2 cathode he is supplied in the conventional leaded SO429 (O247) package. 3 anode 2 tab cathode 2 3 LMNG VALUES Limiting values in accordance with the Absolute Maximum System (EC 34). SYMBOL PARAMEER CONDONS MN. MAX. UN BYV72EW -5-2 V RRM Peak repetitive reverse voltage - 5 2 V V RWM Crest working reverse voltage - 5 2 V V R Continuous reverse voltage mb 44 C - 5 2 V O(AV) Average rectified ouut current square wave - 3 A FRM (both diodes conducting) Repetitive peak forward current δ =.5; mb 4 C t = 25 µs; δ =.5; - 3 A FSM per diode Non-repetitive peak forward mb 4 C t = ms - 5 A current per diode t = 8.3 ms - 6 A RRM Repetitive peak reverse current RWM() t p = 2 µs; δ =. sinusoidal; with reapplied V -.2 A per diode RSM Non-repetitive peak reverse t p = µs -.2 A current per diode stg j Storage temperature Operating junction temperature -4-5 5 C C Neglecting switching and reverse current losses. ESD LMNG VALUE SYMBOL PARAMEER CONDONS MN. MAX. UN V C Electrostatic discharge Human body model; - 8 kv capacitor voltage C = 25 pf; R =.5 kω October 998 Rev.2
HERMAL RESSANCES SYMBOL PARAMEER CONDONS MN. YP. MAX. UN R th j-mb hermal resistance junction to per diode - - 2.4 K/W mounting base both diodes conducting - -.4 K/W R th j-a hermal resistance junction to in free air - 45 - K/W ambient ELECRCAL CHARACERSCS characteristics are per diode at j = 25 C unless otherwise stated SYMBOL PARAMEER CONDONS MN. YP. MAX. UN V F Forward voltage F = 5 A; j = 5 C -.83.9 V F = 5 A -.95.5 V F = 3 A -..2 V R Reverse current V R = V RWM ; j = C -.5 ma V R = V RWM - µa Q s Reverse recovery charge F = 2 A; V R 3 V; -d F /dt = 2 A/µs - 6 5 nc t rr Reverse recovery time F = A; V R 3 V; - 2 28 ns -d F /dt = A/µs t rr2 Reverse recovery time F =.5 A to R = A; rec =.25 A - 3 22 ns V fr Forward recovery voltage F = A; d F /dt = A/µs - - V October 998 2 Rev.2
F d F dt.5a F t rr A time rec =.25A Q s % % R trr2 R rrm = A R Fig.. Definition of t rr, Q s and rrm Fig.4. Definition of t rr2 F PF / W 2 Vo =.75 V Rs =.97 Ohms BYV42 mb() / C 2 D =. 5.5 4 time..2 26 V F V fr 5 D = 38 Fig.2. Definition of V fr V F time t 5 5 2 5 25 F(AV) / A Fig.5. Maximum forward dissipation P F = f( F(AV) ) per diode; square current waveform where F(AV) = F(RMS) x D. Voltage Pulse Source R D.U.. PF / W 5 Vo =.75 V Rs =.97 Ohms 4 BYV42 2.8 2.2 mb() / C 4 a =.57.9 26 Current shunt to scope 5 38 Fig.3. Circuit schematic for t rr2 5 5 5 F(AV) / A Fig.6. Maximum forward dissipation P F = f( F(AV) ) per diode; sinusoidal current waveform where a = form factor = F(RMS) / F(AV). October 998 3 Rev.2
trr / ns Qs / nc F=2A F=2A A 5A 2A A F=A df/dt (A/us) Fig.7. Maximum t rr at j = 25 C; per diode.. -df/dt (A/us) Fig.. Maximum Q s at j = 25 C; per diode rrm / A ransient thermal impedance, Zth j-mb (K/W) F=2A F=A... P D D =. -df/dt (A/us) Fig.8. Maximum rrm at j = 25 C; per diode t. us us us ms ms ms s s pulse width, (s) BYV42E Fig.. ransient thermal impedance; per diode; Z th j-mb = f(t p ). 5 4 F / A j = 5 C j = 25 C 3 2 typ.5..5 VF / V Fig.9. ypical and imum forward characteristic F = f(v F ); parameter j October 998 4 Rev.2
MECHANCAL DAA Dimensions in mm Net Mass: 5 g 6 5.3 7.3.8 5.3 o 3.5 3.5 2 5.5 seating plane 2.5 5.5 min 4. 2 3 2.2 3.2..4 M.9 5.45 5.45 Notes. Refer to mounting instructions for SO429 envelope. 2. Epoxy meets UL94 V at /8". Fig.2. SO429 (O247); pin 2 connected to mounting base. October 998 5 Rev.2
DEFNONS Data sheet status Objective specification his data sheet contains target or goal specifications for product development. Preliminary specification his data sheet contains preliminary data; supplementary data may be published later. his data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (EC 34). Stress above one or more of the limiting values may cause permanent damage to the device. hese are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. he information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LFE SUPPOR APPLCAONS hese products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. October 998 6 Rev.2