1 Power Semiconductors technologies trends for E-Mobility Gianni Vitale Power Conversion & Drives Section Manager System Lab, STMicroelectronics NESEM 2013, Toulouse All trademarks and logos are property of their respective owners. All rights reserved. They are here used only as conceptual examples
Semiconductor Market Outlook in Automotive Technology positioning for E-Vehicles applications Silicon Technology Evolution Low Voltage MOSFETs High Voltage MOSFETs IGBTS New WBG Materials (SiC & GaN) Next Steps & Challenges Outline 2
Semiconductor Market Outlook in Automotive 3
Pervasiveness of Semiconductors 4 Key Products in E-Vehicles: 8/32 Microcontrollers, MEMS, RF ICs, Smart Power ASICs, Gate Drivers, Power MOSFETs, IGBTs, Rectifiers, Power Modules Source: Strategy Analytics, IHS isuppli, Automotive, April 2013
$ Million HEV/EV Power Semiconductors Demand 5 1500 1250 1000 750 500 250 0 1.4B$ 2012 2013 2014 2015 2016 2017 2018 2019 16% CAGR Million units of HEV in 2019 Micro Hybrid: 46 M/u Mild Hybrid: 3.2 M/u Full Hybrid: 3.36 M/u Source: Strategy Analytics, AES System & Semi Demand Market Overview Q4 2012
Technology positioning for E-Vehicles applications 6
Electric Vehicles main blocks 7 HEV ECU Aux LV battery (12V or 24V) El motor / generator ICE (no EV) Main inverters Power: 10kW-100kW On Board Charger Power: 1.5kW-50KW Aux. DC/DC converters Power: 1.5kW-4kW DC/DC converter DC/DC converter Traction inverter Hybrid drive unit (HDU) Air-con inverter ICE cooling inverter Power steering inverter On-board charger Home outlet (AC) M M M Fast charging (DC) Fast charging (DC) HV Bus (Not in HEV) Cells balancing HV battery pack (200V to 450V) Battery module Fast Charger Power: 50kW-100KW PLM Fast Charger ISO15118 Smart Meter Three phase mains (AC) BUS <60V BUS >60V by degree of hybridization Micro-Hybrid ICE with Start/Stop and (optionally) regenerative breaking Mild-Hybrid ICE with Start/Stop, electrical assistance, regenerative braking Full-Hybrid Can run on just ICE, just batteries, combination of both All trademarks and logos are property of their respective owners. All rights reserved. They are here used only as conceptual examples
Electric Vehicles Technology mapping 8 BUS <60V Micro-Hybrid ICE with Start/Stop and (optionally) regenerative breaking Mild-Hybrid ICE with Start/Stop, electrical assistance, regenerative braking Application DC/DC Converter AC/DC Converter Inverter Power Transistor Voltage Class 80-150V 500-600V 40-100V Trench STripFET VII DeepGATE Planar STripFET III Super Junction MDmesh V BUS >60V Full-Hybrid Can run on just ICE, just batteries, combination of both DC/DC Converter AC/DC Converter Inverter 600-650V 80-150V 500-600V 600/1200V Trench STripFET VII DeepGATE Super Junction MDmesh V IGBT Trench Gate Field Stop All trademarks and logos are property of their respective owners. All rights reserved. They are here used only as conceptual examples
Silicon Technology Evolution 9
LV MOSFET Technology Overview 10 Planar STripFET II Planar STripFET III Trench STripFET VI DeepGATE Trench STripFET VII DeepGATE Technology features High ruggedness in linear mode operation Better R DS x Silicon Area than past gen Additional features: JFET enhancement m-trench Ideal for synchronous rectification Lowest R DS x Area Better performance of intrinsic diode Crss/Ciss ratio optimized for motor control All trademarks and logos are property of their respective owners. All rights reserved. They are here used only as conceptual examples
LV MOSFET Technology evolution 11 NCP = 1.50 NCP = 1.80 NCP = 1.33 NCP = 1 Pitch STripFET III H3 / F3 (Planar) 20-100V N-Channel STripFET V F5 (planar) 40 V N-Channel STripFET VI DeepGATE F6 (trench) 40 60 V N-Channel STripFET VI DeepGATE F6 (trench) 30 80 V P-Channel STripFET VII DeepGATE F7 (trench) 40 120 V N-Channel NCP = Normalized Channel Perimeter 1 R ch NCP
HV Power MOSFET Technology Overview 1500V 1000V 800V 600V 500V SuperMESH NK series SuperMESH 3 K3 N K3 series SuperMESH 5 N K5 NM N MDmesh II N M2 MDmesh II Plus Low Qg N..M6 N M5 MDmesh VI MDmesh V 12 200V Planar Super-junction 1 0.8 0.7 0.5 0.30 0.25 0.15 Normalized R DS(on) x Area
HV MOSFET Technology evolution 13 SuperMESH NK series (400 1500)V Standard technology Improved Rds(on) * Area vs previous generation MDmesh II / FDmesh II NM..N & NM..ND series (600 650)V SuperJunction structure Improved Rds(on) * Area vs std junction generation Fast Diodes version (Fdmesh) MDmesh V N..M5 series (600 650)V Improved SuperJunction structure Improved Rds(on) * Area vs previous generation II Optimized RDS(on)*Qg Higher VDSS rating
HV Power MOSFETs product optimization R DS(on) /Qg State-of-the-art R DS(on) /Qg Evolution 14 600V Best efficiency solution MDmesh II 650V MDmesh V 600V Qg MDmesh II Plus Low 650V MDmesh VI 650V Best cost/performance solution Technology Evolution
IGBTs Trench Gate Field Stop: Technology Milestones and Features 15 Planar Trench FS emitter gate emitter gate p++ n+ p- n- p++ n+ p- (base) n- 110 µm 1200V 70µm 600V/650V n+ (field-stop) 410µm n (field-stop) p+ collector p+ (substrate) collector Technology Milestones Implanted Back Emitter Implanted Field Stop Optimized P-N-P BJT Trench Gate Thin wafer thickness Benefits Lower E OFF due to improved minority carrier recombination High switching robusteness (Large RBSOA) Lower V CE(sat) Lower R TH All trademarks and logos are property of their respective owners. All rights reserved. They are here used only as conceptual examples
IGBT Technology Evolution 16 Emitter N- Basis (EPI) Gate N+ buffer (EPI) P+ Emitter substrate Collector PT 600V Planar PT NC Electronic Irradiation 600V Adv Planar PT HF Electronic Irradiation Gen III Trench Gate Field Stop 600V - V Very high speed 1200V- H High speed Trench Gate Field Stop 650V M Low Loss 1200V- H High speed Gen II Trench Gate Field Stop 1200V M Low loss Gen II Emitter Gate N- Basis N+ buffer FS Gen II Collector
New WBG Materials (SiC & GaN) 17
Technology breakthrough 18 IGBT STD-series Punch-through PowerMESH technology IGBT H-series High Frequency Trench Gate Field-Stop 175 C rated SiC MOSFET Silicon Carbide MOSFET 200 C rated 1200V IGBT V-series Trench Gate Field- Stop Fast IGBT Mdmesh VI MOSFETs 650 V GaN HEMT 650 V, truly normallyoff 650V Breakthrough Technology Today Time All trademarks and logos are property of their respective owners. All rights reserved. They are here used only as conceptual examples
Pw SiC & GaN Application Map 19 LV & SJ TAM 350 KW 100 kw GaN SiC HEV / EV RAIL TRACTION SMART POWER GRID WIND MILLS 50 kw 30 kw 10 kw HEV / EV PHOTOVOLTAIC PHOTOVOLTAIC INDUSTRIAL DRIVES POWER Supply & UPS 5kW 1kW NETCOM, SERVER, NOTEBOOK POWER SUPPLY HOME APPLIANCE Rated Voltage 650V 1200V
1200V SiC MOSFET vs 1200V IGBT 20 Device SiC MOSFET Von typ (V)(@ 25 C, 20A Von typ (V) (@ 175 C, 20A Eon (uj) @ 20A, 900V 25 C/175 C Eoff(uJ) @ 20A, 900V 25 C/175 C Chip size 2 2.4 725/ 965(*) 245/307 0.45 + 30 % at 175 C IGBT 1.95 2.35 2140/3100 980/1850 1 (*) Eon measured by using the SiC intrinsic body diode + 90 % at 175 C SiC MOSFET vs. Best in Class IGBT Results measured on first samples (1200V / 30A/100m ) All trademarks and logos are property of their respective owners. All rights reserved. They are here used only as conceptual examples SiC
600 V GaN HEMT vs. SJ MOSFETs & IGBT. Qualitative Comparison 21 Si SJ MOSFETs (up to 30A) Si IGBTs (up to 200 A) GaN Normally off Driving Requirements Standard Standard Quite Complex Conduction Losses Low Extremely low Very Low Operation Speed Fast Slow to Medium Very Fast Reverse Mode Capability Not good Good External freewheeling diode Very Good Bridge Performance Poor Good Superior Technology Maturity COST/A Normalized 100 % 100 % 30% 1.5 1 3 same as Si in the next 5 years All trademarks and logos are property of their respective owners. All rights reserved. They are here used only as conceptual examples
600V GaN HEMT vs. Silicon Technologies 22 Small recovery current and low Qrr Diode: Ideal for Bridge topologies (Inverter) Save freewheeling diode smaller system Can replace 600V IGBT and MOSFETs Very High switching speed is allowed: Save passive components lighter & smaller system 3KW Boost Converter All trademarks and logos are property of their respective owners. All rights reserved. They are here used only as conceptual examples
From Technology to products 23 BUS VOLTAGE <60V BUS VOLTAGE >60V Micro-Hybrid ICE with Start/Stop and (optionally) regenerative breaking Mild-Hybrid ICE with Start/Stop, electrical assistance, regenerative braking Full-Hybrid Can run on just ICE, just batteries, combination of both Power Module for Electric Vehicle Power Module for Electric Turbine Features: 18KW Inverter 100V/500A Trench STripFET VII DeepGATE Size 126x52 mm Leakage inductance <12nH Improved Thermal efficiency Features: 60KW Inverter 1200V/300A SiC MOSFETs Size 170x100 mm 40% Size reduction vs IGBTs solution All trademarks and logos are property of their respective owners. All rights reserved. They are here used only as conceptual examples
Next Steps & Challenges 24 Silicon Technologies Moore s Law: Miniaturization More than Moore: Functionalities 3D Structure : i.e. MEMS Through-Silicon Vias Galvanic Isolation Heterogeneous Integration New Materials Getters Polymers Shape Memory Alloy Piezoelectric (PZT) SiC & GaN Graphene C Wafer Level Packaging (Staked Multi Dice) New interconnections (Bondless. Sintering, Cu on Cu) Smart System In Package (SiP) Package Orientation & Localization Algorithms Embedded Predictive & Reactive Capabilities IPs & Software All trademarks and logos are property of their respective owners. All rights reserved. They are here used only as conceptual examples
Thanks 25