AOT144L/AOB144L 4V NChannel Rugged Planar MOSFET eneral escription The AOT144L/AOB144L uses a robust technology that is designed to provide efficient and reliable power conversion even in the most demanding applications, including motor control. With low R S(ON) and excellent thermal capability this device is appropriate for high current switching and can endure adverse operating conditions. Product Summary V S I (at V S =1V) R S(ON) (at V S =1V) 1% UIS Tested 1% R g Tested 4V A < 4.mΩ Top View TO Bottom View Top View TO63 PAK Bottom View S S Absolute Maximum Ratings T A =5 C unless otherwise noted Parameter Symbol Maximum Units rainsource Voltage 4 V atesource Voltage Continuous rain Current Pulsed rain Current C T C =5 C T C =1 C V S V S I M Continuous rain T A =5 C 15 I SM Current T A =7 C 11 A Avalanche Current C Avalanche energy L=.1mH C I AS, I AR E AS, E AR 14 98 A mj T C =5 C 417 P Power issipation B T C =1 C 8 W T A =5 C.1 P Power issipation A SM W T A =7 C 1.3 Junction and Storage Temperature Range T J, T ST 55 to 175 C S ± I 157 5 S S V A Thermal Characteristics Parameter Symbol Typ Max Maximum JunctiontoAmbient A t 1s 1 15 Maximum JunctiontoAmbient A R θja SteadyState 48 6 Maximum JunctiontoCase SteadyState.3.36 R θjc Units C/W C/W C/W Rev1: May 11 www.aosmd.com Page 1 of 6
AOT144L/AOB144L Electrical Characteristics (T J =5 C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV SS rainsource Breakdown Voltage I =5µA, V S =V 4 V V S =4V, V S =V 1 I SS Zero ate Voltage rain Current µa T J =55 C 5 I SS atebody leakage current V S =V, V S = ±V 1 na V S(th) ate Threshold Voltage V S =V S, I =5µΑ.5 3.1 3.7 V I (ON) On state drain current V S =1V, V S =5V 5 A V S =1V, I =A 3.6 4. mω TO T J =15 C 6 7 R S(ON) Static rainsource OnResistance V S =1V, I =A TO63 3.3 3.9 mω g FS Forward Transconductance V S =5V, I =A 55 S V S iode Forward Voltage I S =1A,V S =V.7 1 V I S Maximum Bodyiode Continuous Current A YNAMIC PARAMETERS C iss Input Capacitance 84 3568 43 pf C oss Output Capacitance V S =V, V S =V, f=1mhz 96 1388 181 pf C rss Reverse Transfer Capacitance 85 151 15 pf R g ate resistance V S =V, V S =V, f=1mhz 1.5 3.1 4.7 Ω SWITCHIN PARAMETERS Q g (1V) Total ate Charge 55 71 86 nc Q gs ate Source Charge V S =1V, V S =V, I =A 15 nc Q gd ate rain Charge 3 nc t (on) TurnOn elaytime 16 ns t r TurnOn Rise Time V S =1V, V S =V, R L =1Ω, 3 ns t (off) TurnOff elaytime R EN =3Ω 54 ns t f TurnOff Fall Time ns t rr Body iode Reverse Recovery Time I F =A, di/dt=5a/µs 35 45 55 ns Q rr Body iode Reverse Recovery Charge I F =A, di/dt=5a/µs 5 87 35 nc A. The value of R θja is measured with the device mounted on 1in FR4 board with oz. Copper, in a still air environment with T A =5 C. The Power dissipation P SM is based on R θja and the maximum allowed junction temperature of 15 C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175 C may be used if the PCB allows it. B. The power dissipation P is based on T J(MAX) =175 C, using junctiontocase thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T J(MAX) =175 C. Ratings are based on low frequency and duty cycles to keep initial T J =5 C. Maximum UIS current limited by test equipment.. The R θja is the sum of the thermal impedance from junction to case R θjc and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <3µs pulses, duty cycle.5% max. F. These curves are based on the junctiontocase thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX) =175 C. The SOA curve provides a single pulse rating.. The maximum current limited by package is 1A. H. These tests are performed with the device mounted on 1 in FR4 board with oz. Copper, in a still air environment with T A =5 C. THIS PROUCT HAS BEEN ESINE AN QUALIFIE FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT EVICES OR SYSTEMS ARE NOT AUTHORIZE. AOS OES NOT ASSUME ANY LIABILITY ARISIN OUT OF SUCH APPLICATIONS OR USES OF ITS PROUCTS. AOS RESERVES THE RIHT TO IMPROVE PROUCT ESIN, FUNCTIONS AN RELIABILITY WITHOUT NOTICE. Rev1: May 11 www.aosmd.com Page of 6
AOT144L/AOB144L TYPICAL ELECTRICAL AN THERMAL CHARACTERISTICS 1 1 8 1V 5.5V 5V 8 V S =5V 6 6 I (A) 4 I (A) 4 4.5V V S =4V 1 3 4 5 V S (Volts) Fig 1: OnRegion Characteristics (Note E) 15 C 5 C 1 3 4 5 6 V S (Volts) Figure : Transfer Characteristics (Note E) 8. R S(ON) (mω) 6 4 V S =1V Normalized OnResistance. 1.8 1.6 1.4 1. 1. V S =1V I =A 17 5 1 5 1 15 5 3 I (A) Figure 3: OnResistance vs. rain Current and ate Voltage (Note E).8 5 5 75 1 15 15 175 Temperature ( C) Figure 4: OnResistance vs. Junction Temperature 18 (Note E) 1 1.E 8 I =A 1.E1 4 1.E R S(ON) (mω) 6 4 5 C 15 C I S (A) 1.E1 1.E 1.E3 15 C 5 C 1.E4 4 6 8 1 V S (Volts) Figure 5: OnResistance vs. atesource Voltage (Note E) 1.E5...4.6.8 1. 1. V S (Volts) Figure 6: Bodyiode Characteristics (Note E) Rev1: May 11 www.aosmd.com Page 3 of 6
AOT144L/AOB144L TYPICAL ELECTRICAL AN THERMAL CHARACTERISTICS 1 9 8 V S =V I =A 75 V S (Volts) 6 4 Capacitance (pf) 6 45 3 C oss C iss 15 C rss 15 3 45 6 75 Q g (nc) Figure 7: atecharge Characteristics 1 3 4 V S (Volts) Figure 8: Capacitance Characteristics 1. 9 I (Amps) 1. 1. 1..1 R S(ON) limited T J(Max) =175 C T C =5 C C 1µs 1µs 1µs 1ms 1ms Power (W) 75 6 45 3 15 T J(Max) =175 C T C =5 C 17 5 1..1.1 1 1 1 V S (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F).1.1.1.1 1 1 Pulse Width (s) Figure 1: Single Pulse Power Rating Junctionto 18 Case (Note F) Z θjc Normalized Transient Thermal Resistance 1 1.1 =T on /T T J,PK =T C P M.Z θjc.r θjc R θjc =.36 C/W Single Pulse In descending order =.5,.3,.1,.5,.,.1, single pulse 4 P T on T.1.1.1.1.1.1.1 1 1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev1: May 11 www.aosmd.com Page 4 of 6
AOT144L/AOB144L TYPICAL ELECTRICAL AN THERMAL CHARACTERISTICS 5 5 I AR (A) Peak Avalanche Current 15 1 5 T A =15 C T A =15 C T A =5 C T A =1 C Power issipation (W) 4 3 1 1 1 1 1 1 Time in avalanche, t A (ms) Figure 1: Single Pulse Avalanche capability (Note C) 5 5 75 1 15 15 175 T CASE ( C) Figure 13: Power erating (Note F) 3 1 Current rating I (A) 5 15 1 5 Power (W) 1 1 1 T A =5 C 17 5 1 5 5 75 1 15 15 175 T CASE ( C) Figure 14: Current erating (Note F) 1.1.1.1 1 1 Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junctionto Ambient (Note H) Z θja Normalized Transient Thermal Resistance 1 1.1.1.1 =T on /T T J,PK =T A P M.Z θja.r θja R θja =6 C/W In descending order =.5,.3,.1,.5,.,.1, single pulse Single Pulse.1.1 1 1 1 1 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) 4 P T on T Rev1: May 11 www.aosmd.com Page 5 of 6
AOT144L/AOB144L ate Charge Test Circuit & Waveform Qg UT 1V Qgs Qgd Ig RL Resistive Switching Test Circuit & Waveforms Charge Rg UT 9% 1% t d(on) t r t d(off) t f t on t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L E = 1/ LI AR AR BV SS Rg Id Id I AR UT iode Recovery Test Circuit & Waveforms UT Q = Idt rr Ig Isd L Isd I F di/dt I RM t rr Rev1: May 11 www.aosmd.com Page 6 of 6