DATA SHEET SWITCHING N-CHANNEL POWER MOS FET MOS FIELD EFFECT TRANSISTOR µ PA7GR DESCRIPTION The µpa7gr is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers. PACKAGE DRAWING (Unit: mm) 8 5,, 3 ; Source 4 ; Gate 5, 6, 7, 8 ; Drain FEATURES Low on-state resistance RDS(on) = 5.3 mω MAX. ( = V, ID = 9. A) RDS(on) = 7.3 mω MAX. ( = 4.5 V, ID = 9. A) Low Ciss: Ciss = 6 pf TYP. ( = V, = V) Small and surface mount package (Power SOP8) ORDERING INFORMATION PART NUMBER PACKAGE.8 MAX..44.5 MIN. 4 5.37 MAX..7.4 +..5.5 +..5.78 MAX.. M 6. ±.3 4.4.5 ±..8. µpa7gr Power SOP8 ABSOLUTE MAXIMUM RATINGS (TA = 5 C, All terminals are connected.) Drain to Source Voltage ( = V) S 3 V Gate to Source Voltage ( = V) S ± V Drain Current (DC) ID(DC) ±7 A Drain Current (pulse) Note ID(pulse) ±68 A Total Power Dissipation (TA = 5 C) Note PT. W Channel Temperature Tch 5 C Storage Temperature Tstg 55 to + 5 C Single Avalanche Current Note3 IAS 7 A Single Avalanche Energy Note3 EAS 8.9 mj EQUIVALENT CIRCUIT Gate Drain Source Body Diode Notes. PW µs, Duty Cycle %. Mounted on ceramic substrate of mm x. mm 3. Starting Tch = 5 C, VDD = 5 V, RG = 5 Ω, L = µh, = V Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. G567EJ (nd edition) Date Published May NS CP(K) Printed in Japan The mark shows major revised points.
µpa7gr ELECTRICAL CHARACTERISTICS (TA = 5 C, All terminals are connected.) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS = 3 V, = V µa Gate Leakage Current IGSS = ± V, = V ± na Gate Cut-off Voltage (off) = V, ID = ma.5..5 V Forward Transfer Admittance yfs = V, ID = 9. A.5 S Drain to Source On-state Resistance RDS(on) = V, ID = 9. A 4. 5.3 mω RDS(on) = 4.5 V, ID = 9. A 5.5 7.3 mω RDS(on)3 = 4. V, ID = 9. A 6.3 8.4 mω Input Capacitance Ciss = V 6 pf Output Capacitance Coss = V pf Reverse Transfer Capacitance Crss f = MHz 34 pf Turn-on Delay Time td(on) VDD = 5 V, ID = 9. A ns Rise Time tr = V 4 ns Turn-off Delay Time td(off) RG = Ω 75 ns Fall Time tf ns Total Gate Charge QG VDD = 5 V 6 nc Gate to Source Charge QGS = 5 V 7 nc Gate to Drain Charge QGD ID = 7 A nc Body Diode Forward Voltage VF(S-D) IF = 7 A, = V.8. V Reverse Recovery Time trr IF = 7 A, = V 5 ns Reverse Recovery Charge Qrr di/dt = A/ µs 5 nc TEST CIRCUIT AVALANCHE CAPABILITY TEST CIRCUIT SWITCHING TIME PG. = V RG = 5 Ω 5 Ω D.U.T. L VDD PG. RG D.U.T. RL VDD Wave Form % 9% 9% 9% VDD ID IAS BS τ Wave Form % % td(on) tr td(off) tf Starting Tch τ = µ s Duty Cycle % ton toff TEST CIRCUIT 3 GATE CHARGE PG. D.U.T. IG = ma 5 Ω RL VDD Data Sheet G567EJ
µpa7gr TYPICAL CHARACTERISTICS (TA = 5 C) dt - Percentage of Rated Power - % 8 6 4 DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 4 6 8 4 6 TA - Ambient Temperature - C PT - Total Power Dissipation - W.8.4..6..8.4 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Mounted on ceramic substrate of mm. mm 4 6 8 4 6 TA - Ambient Temperature - C FORWARD BIAS SAFE OPERATING AREA ID(pulse) = 68 A. RDS(on) Limited ( = V) ID(DC) = 7 A Power Dissipation Limited PW = ms PW = ms PW = ms Remark Mounted on ceramic substrate of mm x. mm TA = 5 C Single Pulse... - Drain to Source Voltage - V rth(t) - Transient Thermal Resistance - C/ W... TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH Rth(ch-A) = 6.5 C/W Mounted on ceramic substrate of mm. mm Single Pulse Channel to Ambient. PW - Pulse Width - s Data Sheet G567EJ 3
µpa7gr FORWARD TRANSFER CHARACTERISTICS DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE. TA = 5 C 75 C 5 C 5 C 8 7 6 5 4 3 = V 4.5 V 4. V = V. 3 4 5 - Gate to Source Voltage - V...4.6 - Drain to Source Voltage - V yfs - Forward Transfer Admittance - S FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT = V.. TA = 5 C 5 C 75 C 5 C RDS(on) - Drain to Source On-state Resistance - mω DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 5 5 ID = 9. A 5 5 - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - mω 4 8 6 4. DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT = 4. V 4.5 V V (off) - Gate to Source Cut-off Voltage - V 3 GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE Tch - Channel Temperature - C = V ID = ma 5 5 5 5 75 5 5 4 Data Sheet G567EJ
µpa7gr RDS(on) - Drain to Source On-state Resistance - mω DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 5 5 5 5 = 4 V 5 5 75 5 5 Tch - Channel Temperature - C 4.5 V V ISD - Diode Forward Current - A = V. SOURCE TO DRAIN DIODE FORWARD VOLTAGE...4.6.8...4 VSD - Source to Drain Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE SWITCHING CHARACTERISTICS Ciss, Coss, Crss - Capacitance - pf Ciss Coss Crss = V f = MHz. td(on), tr, td(off), tf - Switching Time - ns VDD = 5 V = V RG = Ω. td(off) tr tf td(on) - Drain to Source Voltage - V trr - Reverse Recovery Time - ns. REVERSE RECOVERY TIME vs. DRAIN CURRENT di/dt = A/ s = V µ - Drain to Source Voltage - V 4 35 3 5 5 DYNAMIC INPUT/OUTPUT CHARACTERISTICS VDD = 4 V 5 V 6 V 5 ID = 7 A 4 8 6 4 8 3 36 4 QG - Gate Charge - nc 8 7 6 5 4 3 - Gate to Source Voltage - V Data Sheet G567EJ 5
µpa7gr [MEMO] 6 Data Sheet G567EJ
µpa7gr [MEMO] Data Sheet G567EJ 7
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