Hyperfast Rectifier, 3 A FRED Pt

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Hyperfast Rectifier, 3 A FRED Pt VS-3EJH0HM3 Top View SlimSMA (DO-22AC) Cathode esmp Series DESIGN SUPPORT TOOLS Models Available Bottom View PRIMARY CHARACTERISTICS Anode click logo to get started I F(AV) 3 A V R 0 V V F at I F 0.74 V t rr 30 ns T J max. 75 C Package SlimSMA (DO-22AC) Circuit configuration Single FEATURES Hyperfast recovery time, reduced Q rr, and soft recovery 75 C maximum operating junction temperature Specific for output and snubber operation Low forward voltage drop Low leakage current Meets MSL level, per J-STD-020, LF maximum peak of 260 C AEC-Q qualified, meets JESD 20 class 2 whisker test Material categorization: for definitions of compliance please see www.vishay.com/doc?9992 DESCRIPTION / APPLICATIONS State of the art hyperfast recovery rectifiers specifically designed with optimized performance of forward voltage drop and hyperfast recovery time. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in snubber, boost, lighting, piezo-injection, as high frequency rectifiers and freewheeling diodes. The extremely optimized stored charge and low recovery current minimize the switching losses and reduce power dissipation in the switching element. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Peak repetitive reverse voltage V RRM 0 V Average rectified forward current I F(AV) T C = 45 C () 3 Non-repetitive peak surge current I FSM T J = 25 C 85 A Operating junction and storage temperatures T J, T Stg -65 to +75 C Note () Device on PCB with 8 mm x 6 mm soldering lands ELECTRICAL SPECIFICATIONS (T J = 25 C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, blocking voltage V BR, V R I R = 0 μa 0 - - I F = 3 A - 0.86 0.93 Forward voltage V F I F = 3 A, T J = 25 C - 0.74 0.78 V R = V R rated - - 2 Reverse leakage current I R μa T J = 25 C, V R = V R rated - 0.5 8 Junction capacitance C T V R = 0 V - 3 - pf V Revision: 07-May-208 Document Number: 94904 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?900

VS-3EJH0HM3 DYNAMIC RECOVERY CHARACTERISTICS (T J = 25 C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I F =.0 A, di F /dt = 50 A/μs, V R = 30 V - 26 - Reverse recovery time t rr I F = 0.5 A, I R = A, I rr = 0.25 A - - 30 T J = 25 C - 8 - ns T J = 25 C - 26 - Peak recovery current I RRM T I F = 3 A J = 25 C - 2.5 - di F /dt = 200 A/μs T J = 25 C V R = 60 V - 4 - A T J = 25 C - 23 - Reverse recovery charge Q rr T J = 25 C - 50 - nc THERMAL - MECHANICAL SPECIFICATIONS (T J = 25 C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage temperature range T J, T Stg -65-75 C Thermal resistance, junction to lead Thermal resistance, junction to ambient R thjl R thja Device mounted on PCB with 8 mm x 6 mm soldering lands Device mounted on PCB with 2 mm x 3.5 mm soldering lands - 8-9 Approximate Weight 0.032 g 0.00 oz. Marking device Case style SlimSMA (DO-22AC) 3H C/W I F - Instantaneous Forward Current (A) 0 T J = 75 C T J = 50 C T J = 25 C T J = 25 C 0. 0.3 0.6 0.9.2.5 I R - Reverse Current (μa) 0 0. 0.0 0.00 0.000 T J = 75 C T J = 50 C T J = 25 C T J = 25 C 0 20 40 60 80 0 V F - Forward Voltage Drop (V) V R - Reverse Voltage (V) Fig. - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 07-May-208 2 Document Number: 94904 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?900

VS-3EJH0HM3 C T - Junction Capacitance (pf) 0 Average Power Loss (W) 3.5 3 2.5 2.5 0.5 RMS limit D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 DC 0 20 40 60 80 0 0 0 0.6.2.8 2.4 3 3.6 4.2 4.8 V R - Reverse Voltage (V) I F(AV) - Average Forward Current (A) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Fig. 5 - Forward Power Loss Characteristics 80 35 Allowable Case Temperature ( C) 75 70 65 60 55 50 45 40 Square wave (D = 0.50) 80 % rated V R applied See note () DC 0 0.5.5 2 2.5 3 3.5 t rr (ns) 30 25 25 C 20 5 25 C 5 0 00 I F(AV) - Average Forward Current (A) di F /dt (A/μs) Fig. 4 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Typical Reverse Recovery vs. di F /dt 70 60 25 C 50 Q rr (nc) 40 30 25 C 20 0 00 di F /dt (A/μs) Fig. 7 - Typical Stored Charge vs. di F /dt Note () Formula used: T C = T J - (Pd + Pd REV ) x R thjc ; Pd = forward power loss = I F(AV) x V FM at (I F(AV) /D) (see Fig. 6); Pd REV = inverse power loss = V R x I R ( - D); I R at V R = rated V R Revision: 07-May-208 3 Document Number: 94904 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?900

VS-3EJH0HM3 Z thjl - Thermal Impedance Junction to Lead ( C/W) 0. Z thjl 0.0 0.00000 0.0000 0.000 0.00 0.0 0. t - Rectangular Pulse Duration (s) Fig. 8 - Typical Thermal Impedance Z thjl Junction-to-Lead 0 Z thja - Thermal Impedance Junction to Ambient ( C/W) Z thja 0.00 0.0 0. 0 t - Rectangular Pulse Duration (s) Fig. 9 - Typical Thermal Impedance Z thja Junction-to-Ambient (3) t rr 0 I F t a tb (2) I RRM (4) Q rr 0.5 I RRM di (rec)m /dt (5) 0.75 I RRM () di F /dt () di F /dt - rate of change of current through zero crossing (2) I RRM - peak reverse recovery current (3) t rr - reverse recovery time measured from zero crossing point of negative going I F to point where a line passing through 0.75 I RRM and 0.50 I RRM extrapolated to zero current. (4) Q rr - area under curve defined by t rr and I RRM t rr x I Q RRM rr = 2 (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr Fig. - Reverse Recovery Waveform and Definitions Revision: 07-May-208 4 Document Number: 94904 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?900

VS-3EJH0HM3 ORDERING INFORMATION TABLE Device code VS- 3 E J H 0 H M3 2 3 4 5 6 7 8 - product 2 - Current rating (3 = 3 A) 3 - Circuit configuration: E = single diode 4 - J = SlimSMA package 5 - Process type, H = hyperfast recovery 6 - Voltage code (0 = 0 V) 7 - H = AEC-Q qualified 8 - M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER REEL MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-3EJH0HM3/6A 3500 3500 7"diameter plastic tape and reel VS-3EJH0HM3/6B 4 000 4 000 3"diameter plastic tape and reel Dimensions Part marking information Packaging information LINKS TO RELATED DOCUMENTS www.vishay.com/doc?9557 www.vishay.com/doc?95562 www.vishay.com/doc?88869 Revision: 07-May-208 5 Document Number: 94904 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?900

Outline Dimensions DO-22AC (SlimSMA) DIMENSIONS in inches (millimeters) Cathode Band 0.6 (2.70) 0.098 (2.50) 0.057 (.45) 0.049 (.25) 0.7 (4.35) 0.63 (4.5) 0.2 (5.35) 0.99 (5.05) 0.047 (.20) 0.030 (0.75) Mounting Pad Layout Typ.: 0.09 (0.48) 0.039 (.00) 0.035 (0.90) 0.02 (0.30) 0.006 (0.5) 0.060 (.52) MIN. 0.047 (.20) MIN. 0.23 (3.2) MAX. 0.27 (5.52) REF. 0.047 (.20) MIN. Revision: 2-Jul-4 Document Number: 9557 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?900

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