UNISONIC TECHNOLOGIES CO., LTD 60 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 60N06 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom and computer application. FEATURES * R DS(ON) = 18mΩ @V GS = V * Ultra low gate charge ( typical 39 nc ) * Fast switching capability * Low reverse transfer Capacitance (C RSS = typical 115 pf ) * Avalanche energy Specified * Improved dv/dt capability, high ruggedness SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Pin Assignment Package Lead Free Halogen Free 1 2 3 Packing 60N06L-TA3-T 60N06G-TA3-T TO-220 G D S Tube 60N06L-TF3-T 60N06G-TF3-T TO-220F G D S Tube Note: Pin Assignment: G: Gate D: Drain S: Source 1 of 8 Copyright 2007 Unisonic Technologies Co., Ltd.
ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain to Source Voltage V DSS 60 V Gate to Source Voltage V GS ±20 V Continuous Drain Current T C = 25 C 60 A I D T C = 0 C 39 A Drain Current Pulsed (Note 1) I DM 120 A Avalanche Energy Single Pulsed (Note 2) E AS 00 mj Repetitive (Note 1) E AR 180 mj TO-220 120 W Power Dissipation (T C =25 C) P D TO-220F 85 W Junction Temperature T J +175 C Storage Temperature T STG -55 ~ +175 C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL MIN TYP MAX UNIT Junction to Ambient θ JA 62.5 C/W Junction to Case TO-220 1.25 C/W θ JC TO-220F 1.77 C/W ELECTRICAL CHARACTERISTICS (T C = 25 C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS = 0 V, I D = 250 μa 60 V Drain-Source Leakage Current I DSS V DS = 60 V, V GS = 0 V 1 μa Forward V GS = 20V, V DS = 0 V 0 na Gate-Source Leakage Current I GSS Reverse V GS = -20V, V DS = 0 V -0 na ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS = V GS, I D = 250 μa 2.0 4.0 V Static Drain-Source On-State Resistance R DS(ON) V GS = V, I D = 30 A 14 18 mω DYNAMIC CHARACTERISTICS Input Capacitance C ISS 2000 pf Output Capacitance C OSS V GS = 0V, V DS =25V, f = 1MHz 400 pf Reverse Transfer Capacitance C RSS 115 pf SWITCHING CHARACTERISTICS Turn-On Delay Time t D(ON) 12 30 ns Rise Time t R V DD =30V, I D =60A, R L =0.5Ω, 11 30 ns Turn-Off Delay Time t D(OFF) V GS =V (Note 4, 5) 25 50 ns Fall Time t F 15 30 ns Total Gate Charge Q G 39 60 nc V DS = 30V, V GS = V Gate-Source Charge Q GS 12 nc I D = 60A (Note 4, 5) Gate-Drain Charge (Miller Charge) nc Q GD UNISONIC TECHNOLOGIES CO., LTD 2 of 8
ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage V SD V GS = 0 V, I S = 60A 1.6 V Continuous Source Current I S 60 A Pulsed Source Current I SM 120 Reverse Recovery Time t RR I S = 60A, V GS = 0 V, 60 ns Reverse Recovery Charge Q RR di F / dt = 0 A/μs 3.4 μc Note 1. Repeativity rating: pulse width limited by junction temperature 2. L=0.61mH, I AS =60A, R G =20Ω, Starting T J =25 3. I SD 60A, di/dt 300A/μs, V DD BV DSS, Starting T J =25 4. Pulse Test: Pulse Width 300μs, Duty Cycle 2% 5. Essentially independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD 3 of 8
TEST CIRCUITS AND WAVEFORMS D.U.T. + V DS + - - L R G Driver V DD V GS Same Type as D.U.T. * dv/dt controlled by R G * I SD controlled by pulse period * D.U.T.-Device Under Test Fig. 1A Peak Diode Recovery dv/dt Test Circuit V GS (Driver) P.W. Period D= P. W. Period V GS = V I FM, Body Diode Forward Current I SD (D.U.T.) di/dt I RM Body Diode Reverse Current Body Diode Recovery dv/dt V DS (D.U.T.) V DD Body Diode Forward Voltage Drop Fig. 1B Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD 4 of 8
TEST CIRCUITS AND WAVEFORMS (Cont.) Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms UNISONIC TECHNOLOGIES CO., LTD 5 of 8
TYPICAL CHARACTERISTICS Transconductance, gfs (S) On-Resistance, RDS(ON) (Ω) Drain Current, ID (A) Drain Current, ID (A) Capacitance Gate Charge 3000 2500 Ciss 8 V GS = V I D = 60A 2000 6 1500 00 500 Crss Coss 4 2 0 0 20 30 40 0 0 20 30 40 Drain-to-Source Voltage, V DS (V) Total Gate Charge, Q G (nc) UNISONIC TECHNOLOGIES CO., LTD 6 of 8
TYPICAL CHARACTERISTICS(Cont.) Drain Current, ID (A) On-Resistance, RDS(ON) (Ω) (Normalized) Source Current, IS (A) 70 60 50 40 30 20 Maximum Avalanche and Drain Current vs. Case Temperature Drain Current, ID (A) 200 0 1 Limited by R DS(on) Safe Operating Area T J = 25 Single Pulse μs 0μs 1ms ms 0ms dc 0 0.1 0 20 40 60 80 0 120 140 160 180 0.1 1 Case Temperature, T C ( ) Drain-to-Source Voltage, V DS (V) 0 2 Normalized Thermal Transient Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0. 01-5 Single Pulse 0.05 0.02-3 -2-4 -1 Square Wave Pulse Duration (sec) 1 3 UNISONIC TECHNOLOGIES CO., LTD 7 of 8
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD 8 of 8