Schottky Rectifier, 19 A VS-19TQ015SPbF D 2 PAK PRODUCT SUMMARY I F(AV) V R Base cathode 2 1 3 N/C Anode 19 A 15 V FEATURES 125 C operation (V R < 5 V) Optimized for OR-ing applications Ultralow forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C Halogen-free according to IEC 61249-2-21 definition Compliant to RoHS directive 2002/95/EC AEC-Q1 qualified DESCRIPTION The VS-19TQ015SPbF Schottky rectifier has been optimized for ultralow forward voltage drop specifically for the OR-ing of parallel power supplies. The proprietary barrier technology allows for reliable operation up to 125 C junction temperature. Typical applications are in parallel switching power supplies, converters, reverse battery protection, and redundant power subsystems. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I F(AV) Rectangular waveform 19 A V RRM 15 V I FSM t p = 5 μs sine 700 A V F 19 Apk, = 75 C 0.32 V Range - 55 to 125 C VOLTAGE RATINGS PARAMETER SYMBOL VS-19TQ015SPbF UNITS Maximum DC reverse voltage V R Maximum working peak reverse voltage V RWM 15 V ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current See fig. 5 I F(AV) 50 % duty cycle at T C = 80 C, rectangular waveform 19 A Maximum peak one cycle 5 μs sine or 3 μs rect. pulse Following any rated 700 non-repetitive surge current I FSM load condition and with A See fig. 7 ms sine or 6 ms rect. pulse rated V RRM applied 330 Non-repetitive avalanche energy E AS, I AS = 1.50 A, L = 6 mh 6.75 mj Current decaying linearly to zero in 1 μs Repetitive avalanche current I AR Frequency limited by maximum V A = 3 x V R typical 1.50 A Document Number: 94152 For technical questions, contact: diodestech@vishay.com www.vishay.com Revision: 12-Mar- 1
VS-19TQ015SPbF Schottky Rectifier, 19 A ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum forward voltage drop See fig. 1 Note (1) Pulse width < 300 μs, duty cycle < 2 % V FM (1) 19 A 0.36 38 A 0.46 19 A 0.32 = 75 C 38 A 0.43 = C, V R = 12 V 465 Maximum reverse leakage current = C, V R = 5 V 285 I RM See fig. 2 ma.5 V R = Rated V R = C 522 Maximum junction capacitance C T V R = 5 V DC (test signal range khz to 1 MHz), 25 C 2000 pf Typical series inductance L S Measured lead to lead 5 mm from package body 8.0 nh Maximum voltage rate of change dv/dt Rated V R 000 V/μs V THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction temperature range - 55 to 125 C Maximum storage temperature range T Stg - 55 to 150 Maximum thermal resistance, junction to case Typical thermal resistance, case to heatsink Approximate weight R thjc DC operation See fig. 4 1.50 R thcs Mounting surface, smooth and greased 0.50 C/W 2 g 0.07 oz. minimum 6 (5) kgf cm Mounting torque maximum 12 () (lbf in) Marking device Case style D 2 PAK 19TQ015S www.vishay.com For technical questions, contact: diodestech@vishay.com Document Number: 94152 2 Revision: 12-Mar-
Schottky Rectifier, 19 A VS-19TQ015SPbF 0 0 I F - Instantaneous Forward Current (A) 1 = C = 75 C = 25 C I R - Reverse Current (ma) 1 = C = 75 C = 50 C 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 V FM - Forward Voltage Drop (V) 0.1 0 5 15 V R - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 000 C T - Junction Capacitance (pf) 0 0 5 15 20 25 30 V R - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Z thjc - Thermal Impedance ( C/W) 1 0.1 0.01 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 Single pulse. (thermal resistance) 2. Peak = P DM x Z thjc + T C. 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t 1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance Z thjc Characteristics P DM Notes: 1. Duty factor D = t 1 /t 2 t 1 t 2 Document Number: 94152 For technical questions, contact: diodestech@vishay.com www.vishay.com Revision: 12-Mar- 3
VS-19TQ015SPbF Schottky Rectifier, 19 A Allowable Case Temperature ( C) 5 95 90 85 19TQ015 R thjc (DC) = 1.50 C/W DC 80 0 5 15 20 25 30 Average Power Loss (W) 8 6 4 2 D = 0.08 D = 0.17 D = 0.25 D = 0.33 D = 0.50 DC RMS limit 0 0 4 8 12 16 20 24 28 I F(AV) - Average Forward Current (A) I F(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics I FSM - Non-Repetitive Surge Current (A) 0 At any rated load condition and with rated V applied following surge RRM 0 000 t p - Square Wave Pulse Duration (µs) Fig. 7 - Maximum Non-Repetitive Surge Current L D.U.T. IRFP460 High-speed switch Current monitor R g = 25 Ω Freewheel diode 40HFL40S02 + V d = 25 V Fig. 8 - Unclamped Inductive Test Circuit www.vishay.com For technical questions, contact: diodestech@vishay.com Document Number: 94152 4 Revision: 12-Mar-
Schottky Rectifier, 19 A VS-19TQ015SPbF ORDERING INFORMATION TABLE Device code VS- 19 T Q 015 S TRL PbF 1 2 3 4 5 6 7 8 1 - HPP product suffix 2 - Current rating (19 A) 3 - Circuit configuration: T = TO-220 4 - Schottky Q series 5 - Voltage rating (015 = 15 V) 6 - S = D 2 PAK 7 - None = Tube (50 pieces) TRL = Tape and reel (left oriented) TRR = Tape and reel (right oriented) 8 - PbF = Lead (Pb)-free Dimensions Part marking information Packaging information LINKS TO RELATED DOCUMENTS www.vishay.com/doc?95014 www.vishay.com/doc?95008 www.vishay.com/doc?95032 Document Number: 94152 For technical questions, contact: diodestech@vishay.com www.vishay.com Revision: 12-Mar- 5
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