C30884EH Silicon Avalanche Photodiode With Very High Modulation Capability

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DATASHEET Photon Detection C30884EH The C30884EH is a silicon avalanche photodiode having high responsivity and fast rise and fall times. Because the fall time characteristic has no tail, the responsivity of the device is independent of modulation frequency up to about 400 MHz. This device is made using a double-diffused reach-through structure and is optimized for high responsivity at wavelengths of below 00 nanometers. The C30884EH is hermetically sealed behind a flat glass window in a modified low-profile TO-5 package. Key Features High Quantum Efficiency 85% typical at 900 nm % typical at 60nm Spectral Response Range (% Points) 400 to 0 nm Fast Time Response Rise time typically ns Fall time typically ns Wide operating Temperature Range -40 C to 70 C Hermetically Sealed Low- Profile TO-5 package Applications Optical Communications Laser Range Finding High Speed Switching Systems The fast time response characteristics and high responsivity of this device make it highly useful in a wide variety of applications including optical communications, laser range finding and high-speed switching systems. www.excelitas.com Page of 7 C30884EH-Rev..-206.08.

Photodiode C30884E series T Mechanical and Optical Characteristics Parameter Symbol Unit Remarks/Conditions Photosensitive Surface: Useful area Useful diameter Field of View: Nominal field of view α (See Figure 7) Nominal field of view α (See Figure 7) A d 0.5 0.8 FoV 9 32 mm² mm Degrees Shape : Circular Table 2 Electro-Optical Characteristics Test conditions: Case Temperature T A = 22 C; at the DC reverse operating voltage V, V op supplied with the device 3 Parameter Symbol Minimum Typical Maximum Unit Breakdown Voltage V br 90 290 V Operating Voltage V op 80 260 V Temperature Coefficient of V op for Constant Gain V op. V/ C Gain M 0 Responsivity at 900 nm at 60 nm R 55 6 63 8 Quantum Efficiency at 900 nm at 60 nm Q.E. 85 Dark Current 2 I d 75 na A/W % Noise Current f=khz, Δf=.0Hz i n pa/sqrt(hz) Rise/Fall Time, R L = 50Ω: % to 90% points 90% to % points t r t f.5.5 ns Capacitance C d 4 6 pf Series Resistance 5 Ω Storage Temperature T stg -60 0 C Operating Temperature T o -40 70 C For V br at other temperatures, see Figures 2 and 3. 2 See Figure 4. 3 Each individual APD is supplied with its own test data at shipment www.excelitas.com Page 2 of 7 C30884EH-Rev..-206.08.

Typical Responsivity [A/W] Photodiode C30884E series Table 3 Maximum Ratings, Absolute Maximum Values Parameter Symbol Maximum Unit Remarks/Conditions Reverse Bias Dark Current 0 µa Photocurrent average value peak value i p 500 2 µa ma For second duration, nonrepetitive. Forward Current average value peak value I F 5 50 ma For second duration, nonrepetitive. Total power 0. W Dissipation at 22 C Figure Typical Spectral Responsivity Characteristics at a Gain of 0 0 400 500 600 700 800 900 00 0 200 Wavelength [nm] www.excelitas.com Page 3 of 7 C30884EH-Rev..-206.08.

Typical Responsivity at 60 nanometers [A/W] Typical Responsivity at 900 nm [A/W] Photodiode C30884E series Figure 2 Typical Responsivity at 900 nm as a function of Operating Voltage, V op 0 200 250 300 350 400 450 DC Reverse Operating Voltage V op [V] Figure 3 Typical Responsivity at 60 nm as a function of Operating Voltage, V op 200 250 300 350 400 450 DC Reverse Operating Voltage V op [V] www.excelitas.com Page 4 of 7 C30884EH-Rev..-206.08.

Typical Gain, M [no units] Typical Dark Current [na] Photodiode C30884E series Figure 4 Typical Dark Current as a function of Operating Voltage, V op Test conditions: Case temperature = 22 C 0 0 50 200 250 300 350 DC Reverse Operating Voltage V op [V] Figure 5 Typical Gain as a function of Light Spot Position Test conditions: Case temperature = 22 C, Detector center = 0, Spot diameter= 0.0254 mm 00 0 Vop=240V Vop=80V Vop= 40V Vop=35V Vop=290V Vop= 60V Vop=265V Vop=320V 0. -0.6-0.4-0.2 0 0.2 0.4 0.6 Position [mm] www.excelitas.com Page 5 of 7 C30884EH-Rev..-206.08.

Photodiode C30884E series Figure 6 Approximate field of view For incident radiation at angles, the photosensitive surface is totally illuminated. For incident radiation at angles, but, the photosensitive surface is partially illuminated Figure 7 Dimensional Outline www.excelitas.com Page 6 of 7 C30884EH-Rev..-206.08.

Photodiode C30884E series RoHS Compliance The C30884EH is designed and built to be fully compliant with the European Union Directive 20/65/EU Restriction of the use of certain Hazardous Substances (RoHS) in Electrical and Electronic equipment. Warranty A standard 2-month warranty following shipment applies. Any warranty is null and void if the photodiode window has been opened. About Excelitas Technologies Excelitas Technologies is a global technology leader focused on delivering innovative, customized solutions to meet the lighting, detection and other high-performance technology needs of OEM customers. Excelitas has a long and rich history of serving our OEM customer base with optoelectronic sensors and modules for more than 45 years beginning with PerkinElmer, EG&G, and RCA. The constant throughout has been our innovation and commitment to delivering the highest quality solutions to our customers worldwide. From analytical instrumentation to clinical diagnostics, medical, industrial, safety and security, and aerospace and defense applications, Excelitas Technologies is committed to enabling our customers' success in their specialty end-markets. Excelitas Technologies has approximately 5,000 employees in North America, Europe and Asia, serving customers across the world. Excelitas Technologies 2200 Dumberry Road Vaudreuil-Dorion, Quebec Canada J7V 8P7 Telephone: (+) 450 424 3300 Toll-free: (+) 800 775 6786 Fax: (+) 450 424 3345 detection@excelitas.com Excelitas Technologies GmbH & Co. KG Wenzel-Jaksch-Str. 3 D-6599 Wiesbaden Germany Telephone: (+49) 6 492 430 Fax: (+49) 6 492 65 detection.europe@excelitas.com Excelitas Technologies Singapore, Pte. Ltd. 8 Tractor Road Singapore 627969 Telephone: (+65) 6775 2022 (Main number) Telephone: (+65) 6770 4366 (Customer Service) Fax: (+65) 6778-752 detection.asia@excelitas.com For a complete listing of our global offices, visit www.excelitas.com/locations 206 Excelitas Technologies Corp. All rights reserved. The Excelitas logo and design are registered trademarks of Excelitas Technologies Corp. All other trademarks not owned by Excelitas Technologies or its subsidiaries that are depicted herein are the property of their respective owners. Excelitas reserves the right to change this document at any time without notice and disclaims liability for editorial, pictorial or typographical errors. www.excelitas.com Page 7 of 7 C30884EH-Rev..-206.08.