General Description The MDP193 uses advanced MagnaChip s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDP193 is suitable device for Synchronous Rectification For Server and general purpose applications. MDP193 Single N-channel Trench MOSFET 8V, 12A, 2.5mΩ Features = 8V = 12A @ = 1V R DS(ON) < 2.5 mω @ = 1V 1% UIL Tested 1% Rg Tested D MDP193 Single N-Channel Trench MOSFET 8V G TO-22 S Absolute Maximum Ratings (Ta = 25 o C) Characteristics Symbol Rating Unit Drain-Source Voltage S 8 V Gate-Source Voltage S ±2 V T C=25 o C (Silicon Limited) 25 Continuous Drain Current (1) T C=25 o C (Package Limited) 12 T C=1 o C (Silicon Limited) 158 T C=1 o C (Package Limited) 12 Pulsed Drain Current M 48 A Power Dissipation T C=25 o C P D 312.5 T C=1 o C 125 W Single Pulse Avalanche Energy (2) E AS 612.5 mj Junction and Storage Temperature Range T J, T stg -55~15 o C Thermal Characteristics Characteristics Symbol Rating Unit Thermal Resistance, Junction-to-Ambient (1) R θja 62.5 Thermal Resistance, Junction-to-Case R θjc.4 o C/W 1
Ordering Information Part Number Temp. Range Package Packing RoHS Status MDP193TH -55~15 o C TO-22 Tube Halogen Free Electrical Characteristics (T J =25 o C) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BS = 25μA, = V 8 - - V Gate Threshold Voltage (th) =, = 25μA 2. - 4. Drain Cut-Off Current SS = 64V, = V - - 1. μa Gate Leakage Current I GSS = ±2V, = V - - ±.1 Drain-Source ON Resistance R DS(ON) = 1V, = 5A - 2. 2.5 mω Forward Transconductance g fs = 1V, = 5A - 115 - S Dynamic Characteristics Total Gate Charge Q g - 186.3 - Gate-Source Charge Q gs = 4V, = 5A, = 1V - 56.3 - nc Gate-Drain Charge Q gd - 38.5 - Input Capacitance C iss - 12,222 - Reverse Transfer Capacitance C rss = 4V, = V, f = 1.MHz - 51 - pf Output Capacitance C oss - 2,123 - Turn-On Delay Time t d(on) - 39.6 - Rise Time t r = 1V, = 4V, - 24.2 - Turn-Off Delay Time t d(off) = 5A, R G = 3.Ω - 141 - ns Fall Time t f - 54.2 - Gate Resistance Rg f=1 MHz - 3. - Ω Drain-Source Body Diode Characteristics MDP193 Single N-Channel Trench MOSFET 8V Source-Drain Diode Forward Voltage V SD I S = 5A, = V -.9 1.2 V Body Diode Reverse Recovery Time t rr - 92.8 ns I F = 5A, dl/dt = 1A/μs Body Diode Reverse Recovery Charge Q rr - 231.7 nc Note : 1. Surface mounted FR-4 board by JEDEC (jesd51-7). Continuous current at TC=25 is silicon limited 2. E AS is tested at starting Tj = 25, L = 1.mH, I AS = 35.A, = 1V. 2
R, Reverse Drain Current [A] R DS(ON), (Normalized) Drain-Source On-Resistance R DS(ON) [mω ], Drain-Source On-Resistance Drain Current [A] Drain-Source On-Resistance [mω] 2 18 16 14 12 1 2.5 2. 8 6 4 2 1 V 6. V Fig.1 On-Region Characteristics 1. = 1 V 2. = 5 A 5. V 4.5 V 4. V 1 2 3 4 5, Drain-Source Voltage [V] 4. 3.5 3. 2.5 2. 1.5 1..5. 1 2 3 4 5 6 7 8 9 1 2 18 16 14 = 1V Fig.2 On-Resistance Variation with Drain Current and Gate Voltage = 5A MDP193 Single N-Channel Trench MOSFET 8V 1.5 1. 12 1 8 6.5 4 2 T A = 25. -5-25 25 5 75 1 125 15 T J, Junction Temperature [ o C] Fig.3 On-Resistance Variation with Temperature 4 5 6 7 8 9 1, Gate to Source Volatge [V] Fig.4 On-Resistance Variation with Gate to Source Voltage 1 9 = 1V 1 = V 8 7 6 5 T A =25 1 4 T A =25 3 2 1 1 1 2 3 4 5 6 7 8, Gate-Source Voltage [V] Fig.5 Transfer Characteristics..3.6.9 1.2 1.5 V SD, Source-Drain voltage [V] Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature 3
Z θ JA (t), Thermal Response, Gate-Source Voltage [V] Capacitance [pf] 1 1 3 8 6 4 2 Note : = 5A = 4V 1 2 3 4 5 6 7 8 9 11112131415161718192 Q G, Total Gate Charge [nc] Fig.7 Gate Charge Characteristics 16 14 12 1 8 6 4 2 28 24 C rss C oss C iss 5 1 15 2 25 3 35 4, Drain-Source Voltage [V] C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd Fig.8 Capacitance Characteristics Notes ; 1. = V 2. f = 1 MHz MDP193 Single N-Channel Trench MOSFET 8V 1 2 1 us 2 1 1 1 1-1 Operation in This Area is Limited by R DS(on) Single Pulse T J =Max rated T C =25 1-1 1 1 1 1 2, Drain-Source Voltage [V] 1 ms 1 ms 1 ms DC 16 12 8 4 25 5 75 1 125 15 T C, Case Temperature [ ] Fig.9 Maximum Safe Operating Area Fig.1 Maximum Drain Current vs. Case Temperature 1 D=.5 1-1 1-2 1-3.2.1.5.2.1 1-4 single pulse Duty Factor, D=t 1 /t 2 PEAK T J = P DM * Z θ JC * R θ JC (t) + T C 1-5 1-5 1-4 1-3 1-2 1-1 1 1 1 t 1, Rectangular Pulse Duration [sec] Fig.11 Transient Thermal Response Curve 4
Package Dimension 3 Leads, TO-22 Dimensions are in millimeters unless otherwise specified MDP193 Single N-Channel Trench MOSFET 8V 5
MDP193 Single N-Channel Trench MOSFET 8V DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller s customers using or selling Seller s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. 6