Lab 5: FET circuits. 5.1 FET Characteristics

Similar documents
Phy 335, Unit 4 Transistors and transistor circuits (part one)

Physics 120 Lab 6 (2018) - Field Effect Transistors: Ohmic Region

Chapter 8: Field Effect Transistors

Physics 481 Experiment 3

ITT Technical Institute. ET215 Devices 1. Unit 7 Chapter 4, Sections

IENGINEERS-CONSULTANTS QUESTION BANK SERIES ELECTRONICS ENGINEERING 1 YEAR UPTU ELECTRONICS ENGINEERING EC 101 UNIT 3 (JFET AND MOSFET)

Field Effect Transistors

Figure 1: JFET common-source amplifier. A v = V ds V gs

Field - Effect Transistor

Federal Urdu University of Arts, Science & Technology Islamabad Pakistan THIRD SEMESTER ELECTRONICS - II BASIC ELECTRICAL & ELECTRONICS LAB

EE351 Laboratory Exercise 4 Field Effect Transistors

The Field Effect Transistor

Electronic Devices. Floyd. Chapter 9. Ninth Edition. Electronic Devices, 9th edition Thomas L. Floyd

Chapter 8. Field Effect Transistor

(a) Current-controlled and (b) voltage-controlled amplifiers.

Lecture 14. Field Effect Transistor (FET) Sunday 26/11/2017 FET 1-1

Experiment 5 Single-Stage MOS Amplifiers

CHAPTER 8 FIELD EFFECT TRANSISTOR (FETs)

ITT Technical Institute. ET215 Devices 1. Chapter

Basic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati

4 Transistors. 4.1 IV Relations

LABORATORY #3 QUARTZ CRYSTAL OSCILLATOR DESIGN

Electronics 1 Lab (CME 2410) School of Informatics & Computing German Jordanian University Laboratory Experiment (10) Junction FETs

Name: Date: Score: / (75)

Radio Frequency Electronics

Chapter 8: Field Effect Transistors

Summary. Electronics II Lecture 5(b): Metal-Oxide Si FET MOSFET. A/Lectr. Khalid Shakir Dept. Of Electrical Engineering

Lecture 17. Field Effect Transistor (FET) FET 1-1

E B C. Two-Terminal Behavior (For testing only!) TO-92 Case Circuit Symbol

ECE4902 C Lab 7

Experiment 6: Biasing Circuitry

Electronic PRINCIPLES

Experiment 6: Biasing Circuitry

PS 12b Lab 1c IV Curves

JFET Noise. Figure 1: JFET noise equivalent circuit. is the mean-square thermal drain noise current and i 2 fd

Common-Source Amplifiers

Three Terminal Devices

EE 330 Laboratory 8 Discrete Semiconductor Amplifiers

Experiment No: 5. JFET Characteristics

LABORATORY 3 v1 CIRCUIT ELEMENTS

Field Effect Transistors (npn)

L MOSFETS, IDENTIFICATION, CURVES. PAGE 1. I. Review of JFET (DRAW symbol for n-channel type, with grounded source)

ECE 310L : LAB 9. Fall 2012 (Hay)

ANALOG FUNDAMENTALS C. Topic 4 BASIC FET AMPLIFIER CONFIGURATIONS

Basic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati

AE103 ELECTRONIC DEVICES & CIRCUITS DEC 2014

UNIT 3: FIELD EFFECT TRANSISTORS

Prof. Paolo Colantonio a.a

THE JFET. Script. Discuss the JFET and how it differs from the BJT. Describe the basic structure of n-channel and p -channel JFETs

KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 1 6 FIELD-EFFECT TRANSISTORS

Prelab 6: Biasing Circuitry

Facility of Engineering. Biomedical Engineering Department. Medical Electronic Lab BME (317) Post-lab Forms

Electronic Circuits I - Tutorial 03 Diode Applications I

OBJECTIVE TYPE QUESTIONS

PREVIEW COPY. Amplifiers. Table of Contents. Introduction to Amplifiers...3. Single-Stage Amplifiers...19

UNIT 4 BIASING AND STABILIZATION

Depletion-mode operation ( 공핍형 ): Using an input gate voltage to effectively decrease the channel size of an FET

Introducing transistors 3. Introducing the digital oscilloscope 5. Worksheet 1 - Testing BJT transistors 7

UNIT-VI FIELD EFFECT TRANSISTOR. 1. Explain about the Field Effect Transistor and also mention types of FET s.

EE311: Electrical Engineering Junior Lab, Fall 2006 Experiment 4: Basic MOSFET Characteristics and Analog Circuits

I E I C since I B is very small

FIELD EFFECT TRANSISTOR (FET) 1. JUNCTION FIELD EFFECT TRANSISTOR (JFET)

Electronic Circuits. Junction Field-effect Transistors. Dr. Manar Mohaisen Office: F208 Department of EECE

UNIT I - TRANSISTOR BIAS STABILITY

Physics 120 Lab 1 (2018) - Instruments and DC Circuits

Field-Effect Transistor

Lecture - 18 Transistors

FET. FET (field-effect transistor) JFET. Prepared by Engr. JP Timola Reference: Electronic Devices by Floyd

Physics 364, Fall 2014, Lab #12 (transistors I: emitter follower) Monday, October 13 (section 401); Tuesday, October 14 (section 402)


LAB 4 : FET AMPLIFIERS

EE 230 Lab Lab 9. Prior to Lab

LABORATORY 3 v3 CIRCUIT ELEMENTS

The Common Source JFET Amplifier

EE4902 C Lab 7

Lab 6: MOSFET AMPLIFIER

Questions on JFET: 1) Which of the following component is a unipolar device?

Experiment 8 Frequency Response

Chapter 6: Field-Effect Transistors

Lab 5: Multi-Stage Amplifiers

Experiment 9- Single Stage Amplifiers with Passive Loads - MOS

2. SINGLE STAGE BIPOLAR JUNCTION TRANSISTOR (BJT) AMPLIFIERS

The MOSFET can be easily damaged by static electricity, so careful handling is important.

DEPARTMENT OF ELECTRICAL ENGINEERING AND COMPUTER SCIENCE MASSACHUSETTS INSTITUTE OF TECHNOLOGY CAMBRIDGE, MASSACHUSETTS 02139

Unit III FET and its Applications. 2 Marks Questions and Answers

Document Name: Electronic Circuits Lab. Facebook: Twitter:

ECE 3274 MOSFET CD Amplifier Project

THIRD SEMESTER ELECTRONICS - II BASIC ELECTRICAL & ELECTRONICS LAB DEPARTMENT OF ELECTRICAL ENGINEERING

Experiment#: 8. The JFET Characteristics & DC Biasing. Electronics (I) Laboratory. The Hashemite University. Faculty of Engineering

ENEE 307 Laboratory#2 (n-mosfet, p-mosfet, and a single n-mosfet amplifier in the common source configuration)

Dev Bhoomi Institute Of Technology Department of Electronics and Communication Engineering PRACTICAL INSTRUCTION SHEET

COLLECTOR DRAIN BASE GATE EMITTER. Applying a voltage to the Gate connection allows current to flow between the Drain and Source connections.

The University of Jordan Mechatronics Engineering Department Electronics Lab.( ) Experiment 1: Lab Equipment Familiarization

Optimization of an OTA Based Sine Waveshaper

EXPERIMENT 10: Power Amplifiers

Revised: Summer 2010

9 Feedback and Control

PURPOSE: NOTE: Be sure to record ALL results in your laboratory notebook.

Chapter 5: Field Effect Transistors

Experiment # 4: BJT Characteristics and Applications

Transcription:

Lab 5: FET circuits Reading: The Art of Electronics (TAOE) Section 3.01 3.10, FET s, followers, and current sources. Specifically look at information relevant to today s lab: follower, current source, and variable resistor 5.1 FET Characteristics a) Pinch off voltage V p (called V T for a JFET) and I DSS Recall that there are two types of FET- a normally on (Depletion Mode) and normally off (Enhancement Mode). The JFET is a normally on device, which means that it can be turned off with an applied voltage. The voltage that turns it completely off is called the pinch off voltage. The aim of this section is to verify the transfer characteristics presented on the data sheet by measuring I DSS (the current flowing when V GS = 0) and V T (the voltage for which I D is reduced to zero). Plot a graph to verify the relation between I D and V GS shown in the data sheet. Once you have obtained these values, look at some results from other groups and note the spread in values across a single batch. Check that your values fall within the manufacturers maximum range. 8.0 ma < I DSS < 20 ma -6 V < V T < -2 V Your specific value of V T will be useful to know for some of the following circuits. What role does the 0.01uF capacitor play? Figure 5.1: FET test circuit. Plot I D vs V GS.

5.2 Common Drain Source Characteristics (I D vs V DS ) Construct the following circuit. This will allow you to examine the common drain source characteristics of a JFET. A sample plot is shown on the transistor data sheet in which the operation of the transistor is presented as a series of lines for constant V GS. In the following you will attempt to reproduce these graphs. Figure 5.2: Circuit to measure V DS vs I D We want to trace out a line of constant V GS, so the first step is to set V GS to a test value. Then measure I D for a wide range of voltages V DS. Then try a new value of V GS (use a total of four values of constant V GS = -3, -2, -1, 0V). Plot these on a graph and compare them to the figure in the data sheet. How well do they compare? 5.3 Transconductance and the Load Line (Optional) Transconductance, g, of a FET is the equivalent parameter to h FE for a BJT. It is given by the ratio I D /(V GS -V T ) that has units of Mhos or Seimens (S). Why is this parameter important rather than the equivalent construction (I D /I G ) that we used for the BJT? Construct the following circuit and determine the value of the transconductance of the 2N5486 for a wide range of values of the drain current I D.

Figure 5.3. Circuit to measure transconductance. Try to explain the results that you get from this circuit using the results of section 5.2. 5.4 FET Current Sources (Optional) a) Discreet Transistor Current Source Figure 5.3: FET current source Wire up the circuit above. How good a current source is this? Vary the load and watch V DS with your digital voltmeter as you monitor the current I OUT with the ammeter. What is V DS when the constant current behaviour starts to breakdown? This V DS value marks the boundary of the linear region and should occur when V DS is near V GS -V T. Does your FET s linear region begin around this value of V DS? What you have just constructed is a two terminal current source (a current source that requires no external bias)! This device is almost as easy to use as a resistor as it can be simply slotted into a circuit to provide constant current. Why is it only almost as versatile as a resistor? FET manufacturers have constructed exactly this type of device that is now sold as a current source.

b) Integrated Two Terminal Current Source The J510 is a JFET with the source shorted to the gate, but available in a two terminal package (sometimes this package looks just like a diode and is called a current regulator diode). The current sources are sorted by I DSS ; the J510 passes 3.6mA. First try the FET in the test circuit above (replacing the 2N5486 and 5.6k resistor with the J510). Does the current source perform as well as the circuit you built with the 5486? Would you expect it to? Now to get a feel for how easy it is to design a circuit with this device, try the circuit below which at a glance will look slightly foolish. Figure 5.3: Application for a two terminal current source: square wave to (?) circuit. What output waveform do you expect? In this circuit a JFET s gate conducts if it is forward biased with respect to either the source or the drain, that is why this circuit will operate. Drive the circuit with a 1kHz square wave of about 5 volts amplitude. Centre the input waveform on zero volts and note whether the output is centred. If it is not, why is it not? Now gradually lower the input amplitude until you notice distortion in the output (some curvature near the points). Why does this occur? (Hint: At the point where you notice curvature beginning, note the voltage across the FET: V DS ). 5.5 FET as a Variable Resistor When you tested the FET as a current source, you found that the circuit failed when V DS shrank so far that the device fell into its linear region. Here you will build a circuit intended to operate always within that region: it will fail if V DS gets large enough to carry the FET into the current source region.

Figure 5.7: FET as a voltage controlled resistor/attenuator circuit a) Uncompensated Attenuator Drive the circuit above with a small sine wave (around 0.2V) at around 1kHz. Adjust the potentiometer and note the results, not only in variable attenuation but also in varying the amounts of distortion. (To see the distortion clearly, drive the circuit with a triangle waveform.) Would you predict such a distortion from what you have seen so far? How does the circuit treat a larger input waveform? b) Compensated attenuator Adding ½ V DS to the gate signal straightens the curves of figure 3.30 considerably. The above amendment to the circuit performs this addition. Take a look at its effect in the shape of V out as you drive the circuit with a triangle waveform of about 0.2V amplitude. Figure 5.7: FET as a voltage controlled resistor/attenuator circuit c) Amplitude modulation The circuits above are not very impressive, because it is just as easy to vary the amplitude of the signal using a variable resistor that you turn by hand as it is to use the FET. However with the FET, a voltage controls the amount of attenuation this circuit, thus it is

much more flexible (not to mention faster) than a simple hand turned pot. Using this circuit we can control the size of a signal using a second signal as a control. To put this ability of the FET to work, we shall use a second function generator to drive the gate voltage, so that this second signal replaces the potentiometer and modulates the amplitude of the input signal. Let the frequency of modulation be small, try f modulation of around 50Hz and keep the modulation amplitude small (around 0.2 V). For a stable display of the output waveform trigger the scope on the modulation signal not on the modulated output. Figure 5.8: Amplitude modulation, or multiplication of one signal by another d) AM Radio (optional) This circuit can be easily turned into an AM Radio transmitter. Drive the point called V in with a sine wave of about 1MHz (this is the carrier frequency, f carrier ). Attach a few cms of wire to the output point to act as an aerial then tune an AM radio located nearby to a quite place on the dial and adjust f carrier until you can hear the modulating signal (a single tone). (To make it easier you might want to use the sweep function of the function generator).