FDB62P 2V P-Channel.8V Specified PowerTrench MOSFET January 24 FDB62P General Description This P-Channel power MOSFET uses Fairchild s low voltage PowerTrench process. It has been optimized for power management applications. Applications Battery management Load switch Voltage regulator Features 28 A, 2 V. R DS(ON) = 3 mω @ V GS = 4.5 V R DS(ON) = 4 mω @ V GS = 2.5 V R DS(ON) = 65 mω @ V GS =.8 V Critical DC electrical parameters specified at elevated temperature High performance trench technology for extremely low R DS(ON) 75 C maximum junction temperature rating D S G G S TO-263AB FDB Series D Absolute Maximum Ratings T A =25 o C unless otherwise noted Symbol Parameter Ratings Units V DSS Drain-Source Voltage 2 V V GSS Gate-Source Voltage ± 8 V I D Drain Current Continuous (Note ) 28 A Pulsed (Note ) 8 P D Total Power Dissipation @ T C = 25 C 37 W Derate above 25 C.25 W C T J, T STG Operating and Storage Junction Temperature Range 65 to +75 C Thermal Characteristics R θjc Thermal Resistance, Junction-to-Case 4 C/W R θja Thermal Resistance, Junction-to-Ambient 62.5 C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDB62P FDB62P 3 24mm 8 units 24 Fairchild Semiconductor Corporation FDB62P Rev D(W)
Electrical Characteristics T A = 25 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV DSS Drain Source Breakdown Voltage V GS = V, I D = 25 µa 2 V BVDSS T J Breakdown Voltage Temperature Coefficient I D = 25 µa,referenced to 25 C 6 mv/ C I DSS Zero Gate Voltage Drain Current V DS = 6 V, V GS = V µa I GSSF Gate Body Leakage, Forward V GS = 8 V, V DS = V na I GSSR Gate Body Leakage, Reverse V GS = 8 V V DS = V na FDB62P On Characteristics (Note 2) V GS(th) Gate Threshold Voltage V DS = V GS, I D = 25 µa.4.7.5 V VGS(th) T J Gate Threshold Voltage Temperature Coefficient I D = 25 µa,referenced to 25 C 3 mv/ C R DS(on) Static Drain Source V GS = 4.5 V, I D = 4 A 24 3 mω On Resistance V GS = 2.5 V, I D = 2 A 3 4 V GS =.8 V, I D = A 5 65 V GS = 4.5V, I D = 4 A, T J =25 C 3 42 I D(on) On State Drain Current V GS = 4.5 V, V DS = 5 V 4 A g FS Forward Transconductance V DS = 5 V, I D = 4 A 33 S Dynamic Characteristics C iss Input Capacitance V DS = V, V GS = V, 89 pf C oss Output Capacitance f =. MHz 32 pf Reverse Transfer Capacitance 24 pf C rss Switching Characteristics (Note 2) t d(on) Turn On Delay Time V DD = V, I D = A, 3 23 ns t r Turn On Rise Time V GS = 4.5 V, R GEN = 6 Ω 2 ns t d(off) Turn Off Delay Time 8 28 ns Turn Off Fall Time 5 8 ns t f Q g Total Gate Charge V DS = V, I D = 4 A, 2 28 nc Q gs Gate Source Charge V GS = 4.5 V 4 nc Gate Drain Charge 7 nc Q gd Drain Source Diode Characteristics and Maximum Ratings I S Maximum Continuous Drain Source Diode Forward Current 28 A V SD Drain Source Diode Forward Voltage V GS = V, I S = 4 A.9.3 V Notes:. Pulse Test: Pulse Width < 3µs, Duty Cycle < 2.% 2. Calculated continuous current based on maximum allowable junction temperature. Actual maximum continuous current limited by package constraints to 75A FDB62P Rev. D(W)
Typical Characteristics 4-3.5V -3.V 3-2.5V -2.V 2 -.8V -.5V R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.4 2.2 2.8.6.4.2 V GS = -.8V -2.V -2.5V -3.V -3.5V -4.5V FDB62P 2 3 4 5 -V DS, DRAIN-SOURCE VOLTAGE (V).8 2 3 4 Figure. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE.5.4.3.2..9.8 I D = -4A R DS(ON), ON-RESISTANCE (OHM).9.7.5.3 T A = 25 o C T A = 25 o C I D = -7A.7-5 -25 25 5 75 25 5 75 T J, JUNCTION TEMPERATURE ( o C). 2 3 4 5 -V GS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation withtemperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 3 V DS = -5V T A = -55 o C 25 o C 25 25 o C 2 5 5.5.5 2 2.5 -V GS, GATE TO SOURCE VOLTAGE (V) -I S, REVERSE DRAIN CURRENT (A) V GS = V T A = 25 o C. 25 o C. -55 o C...2.4.6.8.2 -V SD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDB62P Rev. D(W)
Typical Characteristics 5 3 FDB62P -V GS, GATE-SOURCE VOLTAGE (V) 4 3 2 I D =-4A V DS = -5V -5V -V CAPACITANCE (pf) 25 2 5 5 C RSS C OSS C ISS f = MHz V GS = V 5 5 2 25 Q g, GATE CHARGE (nc) 5 5 2 -V DS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. R DS(ON) LIMIT R θjc = 4 o C/W T A = 25 o C ms ms ms s DC µs -V DS, DRAIN-SOURCE VOLTAGE (V) P(pk), PEAK TRANSIENT POWER (W) 8 6 4 2.... t, TIME (sec) R θjc = 4 C/W T A = 25 C Figure 9. Maximum Safe Operating Area. Figure. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE. D =.5.2..5.2. R θja (t) = r(t) + R θja R θjc = 4 C/W T J - T A = P * R θja (t) Duty Cycle, D = t / t 2..... P(pk) t t 2 Figure. Transient Thermal Response Curve. FDB62P Rev. D(W)
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