High Speed IR Emitting Diode in T-¾ Package TSHG64 Description TSHG64 is a high speed infrared emitting diode in GaAlAs double hetero (DH) technology, molded in a clear, untinted plastic package. TSHG6 series combines high speed with high radiant power at wavelength of 85 nm. 94 839 Features High modulation bandwidth Extra high radiant power and radiant intensity Low forward voltage e2 Suitable for high pulse current operation Standard package T-¾ ( 5 mm) Angle of half intensity ϕ = ± 22 Peak wavelength λ p = 85 nm High reliability Good spectral matching to Si photodetectors Lead (Pb)-free component Component in accordance to ELV 2/53/EC, RoHS 22/95/EC and WEEE 22/96/EC Applications Infrared radiation source for CMOS cameras (illumination). High speed IR data transmission. Parts Table TSHG64 Part Remarks MOQ: 4 pc Absolute Maximum Ratings T amb = 25 C, unless otherwise specified Parameter Test condition Symbol Value Unit Reverse voltage V R 5 V Forward current I F ma Peak forward current t p /T =.5, t p = µs I FM 2 ma Surge forward current t p = µs I FSM A Power dissipation P V 25 mw Junction temperature T j C Operating temperature range T amb - 4 to + 85 C Storage temperature range T stg - 4 to + C Soldering temperature t 5 sec, 2 mm from case T sd 26 C Thermal resistance junction/ ambient R thja 3 K/W
TSHG64 Basic Characteristics T amb = 25 C, unless otherwise specified Parameter Test condition Symbol Min Typ. Max Unit Forward voltage I F = ma, t p = 2 ms V F.5.8 V I F = A, t p = µs V F 2.3 V Temp. coefficient of V F I F = ma TK VF - 2. mv/k Reverse current V R = 5 V I R µa Junction capacitance V R = V, f = MHz, E = C j 25 pf Radiant intensity I F = ma, t p = 2 ms I e 4 7 2 mw/sr I F = A, t p = µs I e 7 mw/sr Radiant power I F = ma, t p = 2 ms φ e 5 mw Temp. coefficient of φ e I F = ma TKφ e -.35 %/K Angle of half intensity ϕ ± 22 deg Peak wavelength I F = ma λ p 85 nm Spectral bandwidth I F = ma Δλ 4 nm Temp. coefficient of λ p I F = ma TKλ p.25 nm/k Rise time I F = ma t r 2 ns Fall time I F = ma t f 3 ns Cut-off frequency I DC = 7 ma, I AC = 3 ma pp f c 2 MHz Virtual source diameter 3.7 mm Typical Characteristics Tamb = 25 C, unless otherwise specified 3 2 P V - Power Dissipation (mw) 25 2 5 5 R thja IF 75 5 25 75 5 25 R thja 2 3 4 5 6 7 8 9 6647 T amb - Ambient Temperature ( C) Figure. Power Dissipation vs. Ambient Temperature 2 3 4 5 6 7 8 9 6964 T amb - Ambient Temperature ( C) Figure 2. Forward Current vs. Ambient Temperature 2
TSHG64 I F /T =. T amb < 5.2.5..2.5 e - Radianower (mw)... 63 - Pulse Duration (ms) Figure 3. Pulse Forward Current vs. Pulse Duration. 697 I F Figure 6. Radianower vs. Forward Current.25 I F = µs /T =. - Relative Radianower e, rel..75.5.25 2 3 4 V 8873 F - Forward Voltage (V) Figure 4. Forward Current vs. Forward Voltage 8 85 9 6972 - Wavelength (nm) Figure 7. Relative Radianower vs. Wavelength I e - Radiant Intensity (mw/sr). 822 I F I e, rel - Relative Radiant Intensity..9.8.7 94 8883.6.4.2 2.2.4.6 3 4 5 6 7 8 Figure 5. Radiant Intensity vs. Forward Current Figure 8. Relative Radiant Intensity vs. Angular Displacement 3
TSHG64 Package Dimensions in mm 9257 4
Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to TSHG64. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (987) and its London Amendments (99) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 99 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/54/EEC and 9/69/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use products for any unintended or unauthorized application, the buyer shall indemnify against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-7425 Heilbronn, Germany 5
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