AONE363 5V Dual Asymmetric NChannel MOSFET General Description Bottom Source Technology Very Low R DS(ON) High Current Capability RoHS and HalogenFree Compliant Product Summary Q Q V DS 5V 5V I D (at V GS =V) 7A 3A R DS(ON) (at V GS =V) <.6mΩ <.mω R DS(ON) (at V GS =.5V) < 6mΩ <.7mΩ Applications DC/DC Converters in PC, Servers Point of load Converters % UIS Tested % Rg Tested Top View DFN3.3x3.3A Bottom View Top View Transparent View Pin Orderable Part Number Package Type Form Minimum Order Quantity AONE363 DFN3.3x3.3A Tape & Reel 3 Absolute Maximum Ratings T A =5 C unless otherwise noted Parameter DrainSource Voltage GateSource Voltage Continuous Drain Current T C =5 C T C = C Symbol V DS V GS Pulsed Drain Current C I DM 6 T A =5 C I DSM 7 Continuous Drain Current Avalanche Current C T A =7 C Avalanche energy L=.mH C E AS T C =5 C T A =5 C Junction and Storage Temperature Range T J, T STG 55 to 5 I D I AS P DSM ± 6 G Max Q 5 Power Dissipation B T C = C ± 6 G Power Dissipation A T A =7 C.3.6 P D Max Q 5 38 3.5 5 6 G 3 7 8 6 8 35.5.5 Units V V A A A mj W W C Thermal Characteristics Parameter Maximum JunctiontoAmbient A Maximum JunctiontoAmbient A D Maximum JunctiontoCase Symbol Typ Q Typ Q Max Q Max Q t s 5 6 5 R qja SteadyState 75 65 9 8 SteadyState R qjc.5 5 3.5 Units C/W C/W C/W Rev..: October 7 www.aosmd.com Page of 8
AONE363 Q Electrical Characteristics (T J =5 C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV DSS DrainSource Breakdown Voltage I D =5μA, V GS =V 5 V I DSS V DS =5V, V GS =V Zero Gate Voltage Drain Current μa T J =55 C 5 I GSS GateBody leakage current V DS =V, V GS =±V ± na V GS(th) Gate Threshold Voltage V DS =V GS, I D =5mA..8 V R DS(ON) V GS =V, I D =7A 3.8.6 mω Static DrainSource OnResistance T J =5 C 5.3 6. V GS =.5V, I D =5A.8 6 mω g FS Forward Transconductance V DS =5V, I D =7A S V SD Diode Forward Voltage I S =A, V GS =V.7 V I S Maximum BodyDiode Continuous Current 3 A DYNAMIC PARAMETERS C iss Input Capacitance 88 pf C oss Output Capacitance V GS =V, V DS =.5V, f=mhz 5 pf C rss Reverse Transfer Capacitance 55 pf R g Gate resistance f=mhz.35.7.5 Ω SWITCHING PARAMETERS Q g (V) Total Gate Charge.5 nc Q g (.5V) Total Gate Charge 6.5 nc V GS =V, V DS =.5V, I D =7A Q gs Gate Source Charge.5 nc Q gd Gate Drain Charge.5 nc t D(on) TurnOn DelayTime.5 ns t r TurnOn Rise Time V GS =V, V DS =.5V, 3.5 ns t D(off) TurnOff DelayTime R L =.75W, R GEN =3W ns t f TurnOff Fall Time.5 ns t rr Body Diode Reverse Recovery Time I F =7A, di/dt=5a/ms 9 ns Q rr Body Diode Reverse Recovery Charge I F =7A, di/dt=5a/ms.5 nc A. The value of R qja is measured with the device mounted on in FR board with oz. Copper, in a still air environment with T A =5 C. The Power dissipation P DSM is based on R qja t s and the maximum allowed junction temperature of 5 C. The value in any given application depends on the user's specific board design. B. The power dissipation P D is based on T J(MAX) =5 C, using junctiontocase thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature T J(MAX) =5 C. D. The R qja is the sum of the thermal impedance from junction to case R qjc and case to ambient. E. The static characteristics in Figures to 6 are obtained using <3ms pulses, duty cycle.5% max. F. These curves are based on the junctiontoambient thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX) =5 C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on in FR board with oz. Copper, in a still air environment with T A =5 C. APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev..: October 7 www.aosmd.com Page of 8
R DS(ON) (mw) I S (A) R DS(ON) (mw) Normalized OnResistance AONE363 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 8 6 3.5V.5V 3V 8 6 V DS =5V V.5V 5 C 8 V GS =V 3 5 Figure : OnRegion Characteristics 3 5.6 5 C Figure : Transfer Characteristics 6 V GS =.5V. V GS =V I D =7A. V GS =V V GS =.5V I D =5A 5 5 5 3 Figure 3: OnResistance vs. Drain Current and Gate Voltage.8 5 5 75 5 5 75 Temperature ( C) Figure : OnResistance vs. Junction Temperature I D =7A.E.E 8 5 C.E 5 C 6.E 5 C.E3 5 C.E 6 8 Figure 5: OnResistance vs. GateSource Voltage.E5....6.8. V SD (Volts) Figure 6: BodyDiode Characteristics Rev..: October 7 www.aosmd.com Page 3 of 8
Z qja Normalized Transient Thermal Resistance I D (Amps) Power (W) Capacitance (pf) AONE363 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 8 V DS =.5V I D =7A 5 6 9 C iss 6 C oss 3 C rss 3 6 9 5 Q g (nc) Figure 7: GateCharge Characteristics 5 5 5 Figure 8: Capacitance Characteristics. T A =5 C.. R DS(ON) limited ms ms.. DC T J(Max) =5 C T A =5 C ms ms... V GS > or equal to.5v Figure 9: Maximum Forward Biased Safe Operating Area (Note F) E5.. Pulse Width (s) Figure : Single Pulse Power Rating Junctionto Ambient (Note H) D=T on /T T J,PK =T A P DM.Z qja.r qja R qja =9 C/W In descending order D=.5,.3,.,.5,.,., single pulse.. Single Pulse P DM T..... Pulse Width (s) Figure : Normalized Maximum Transient Thermal Impedance (Note H) T on Rev..: October 7 www.aosmd.com Page of 8
AONE363 Q Electrical Characteristics (T J =5 C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV DSS DrainSource Breakdown Voltage I D =5μA, V GS =V 5 V V DS =5V, V GS =V I DSS Zero Gate Voltage Drain Current μa T J =55 C 5 I GSS GateBody leakage current V DS =V, V GS =±V ± na V GS(th) Gate Threshold Voltage V DS =V GS, I D =5mA..8 V R DS(ON) Static DrainSource OnResistance V GS =V, I D =A V GS =.5V, I D =A.. T J =5 C.5.9.3.7 mω g FS Forward Transconductance V DS =5V, I D =A 65 S V SD Diode Forward Voltage I S =A, V GS =V.7 V I S Maximum BodyDiode Continuous Current A DYNAMIC PARAMETERS C iss Input Capacitance 35 pf C oss Output Capacitance V GS =V, V DS =.5V, f=mhz 86 pf C rss Reverse Transfer Capacitance pf R g Gate resistance f=mhz..8. Ω SWITCHING PARAMETERS Q g (V) Total Gate Charge 55 8 nc Q g (.5V) Total Gate Charge 5 35 nc V GS =V, V DS =.5V, I D =A Q gs Gate Source Charge 9.5 nc Q gd Gate Drain Charge 5 nc t D(on) TurnOn DelayTime 8 ns t r TurnOn Rise Time V GS =V, V DS =.5V, R L =.6W, 5.5 ns t D(off) TurnOff DelayTime R GEN =3W 39.5 ns t f TurnOff Fall Time 7 ns t rr Body Diode Reverse Recovery Time I F =A, di/dt=5a/ms 6 ns Q rr Body Diode Reverse Recovery Charge I F =A, di/dt=5a/ms 33.5 nc A. The value of R qja is measured with the device mounted on in FR board with oz. Copper, in a still air environment with T A =5 C. The Power dissipation P DSM is based on R qja t s and the maximum allowed junction temperature of 5 C. The value in any given application depends on the user's specific board design. B. The power dissipation P D is based on T J(MAX) =5 C, using junctiontocase thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature T J(MAX) =5 C. D. The R qja is the sum of the thermal impedance from junction to case R qjc and case to ambient. E. The static characteristics in Figures to 6 are obtained using <3ms pulses, duty cycle.5% max. F. These curves are based on the junctiontoambient thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX) =5 C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on in FR board with oz. Copper, in a still air environment with T A =5 C. mω APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev..: October 7 www.aosmd.com Page 5 of 8
R DS(ON) (mw) I S (A) R DS(ON) (mw) Normalized OnResistance AONE363 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 8 8.5V V DS =5V 6.5V 6 V 5 C 5 C V GS =V 3 5 Figure : OnRegion Characteristics 3 5 Figure : Transfer Characteristics.6 V GS =.5V. V GS =V I D =A V GS =V. V GS =.5V I D =A 5 5 5 3 Figure 3: OnResistance vs. Drain Current and Gate Voltage.8 5 5 75 5 5 75 Temperature ( C) Figure : OnResistance vs. Junction Temperature I D =A.E 3.E.E 5 C 5 C.E 5 C.E3.E 5 C 6 8 Figure 5: OnResistance vs. GateSource Voltage.E5....6.8. V SD (Volts) Figure 6: BodyDiode Characteristics Rev..: October 7 www.aosmd.com Page 6 of 8
Z qja Normalized Transient Thermal Resistance I D (Amps) Power (W) Capacitance (pf) AONE363 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 8 V DS =.5V I D =A 5 35 C iss 6 3 5 5 C oss 5 C rss 3 5 6 5 5 5 Q g (nc) Figure 7: GateCharge Characteristics Figure 8: Capacitance Characteristics.. R DS(ON) limited ms ms T A =5 C.. DC ms ms. T J(Max) =5 C T A =5 C... V GS > or equal to.5v Figure 9: Maximum Forward Biased Safe Operating Area (Note F) E5.. Pulse Width (s) Figure 3: Single Pulse Power Rating Junctionto Ambient (Note H) D=T on /T T J,PK =T A P DM.Z qja.r qja R qja =8 C/W In descending order D=.5,.3,.,.5,.,., single pulse.. Single Pulse P DM T..... Pulse Width (s) Figure 5: Normalized Maximum Transient Thermal Impedance (Note H) T on Rev..: October 7 www.aosmd.com Page 7 of 8
AONE363 Figure Gate A: Charge Gate Charge Test Circuit Test Circuit & Waveform & Waveforms Qg DUT V Qgs Qgd Ig Figure B: Resistive Resistive Switching Switching Test Test Circuit Circuit & Waveforms Waveforms RL Charge Rg DUT Vdd 9% % td(on) t r t d(off) t f t on t off Figure C: Unclamped Inductive Switching (UIS) Test Circuit && Waveforms L E = / LI AR AR BV DSS Rg Id Vdd Id I AR DUT Figure Diode D: Recovery Diode Recovery Test Circuit Test Circuit & Waveforms & Waveforms DUT Q = Idt rr Ig Isd L Vdd Isd I F di/dt I RM t rr Vdd Rev..: October 7 www.aosmd.com Page 8 of 8