NPN Silicon High-Voltage Transistors Data Sheet Revision 1.0, 20--13 RF & Protection Devices
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Revision History Page or Item Subjects (major changes since previous revision) Revision 1.0, 20--13 Converted to the new IFX Template. Trademarks of Infineon Technologies AG AURIX, BlueMoon, COMNEON, C166, CROSSAVE, CanPAK, CIPOS, CoolMOS, CoolSET, CORECONTROL, DAVE, EasyPIM, EconoBRIDGE, EconoDUAL, EconoPACK, EconoPIM, EiceDRIVER, EUPEC, FCOS, HITFET, HybridPACK, ISOFACE, I²RF, IsoPACK, MIPAQ, ModSTACK, my-d, NovalithIC, OmniTune, OptiMOS, ORIGA, PROFET, PRO-SIL, PRIMARION, PrimePACK, RASIC, ReverSave, SatRIC, SIEGET, SINDRION, SMARTi, SmartLEWIS, TEMPFET, thinq!, TriCore, TRENCHSTOP, X-GOLD, XMM, X-PMU, XPOSYS. Other Trademarks Advance Design System (ADS) of Agilent Technologies, AMBA, ARM, MULTI-ICE, PRIMECELL, REALVIEW, THUMB of ARM Limited, UK. AUTOSAR is licensed by AUTOSAR development partnership. Bluetooth of Bluetooth SIG Inc. CAT-iq of DECT Forum. COLOSSUS, FirstGPS of Trimble Navigation Ltd. EMV of EMVCo, LLC (Visa Holdings Inc.). EPCOS of Epcos AG. FLEXGO of Microsoft Corporation. FlexRay is licensed by FlexRay Consortium. HYPERTERMINAL of Hilgraeve Incorporated. IEC of Commission Electrotechnique Internationale. IrDA of Infrared Data Association Corporation. ISO of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB of MathWorks, Inc. MAXIM of Maxim Integrated Products, Inc. MICROTEC, NUCLEUS of Mentor Graphics Corporation. Mifare of NXP. MIPI of MIPI Alliance, Inc. MIPS of MIPS Technologies, Inc., USA. murata of MURATA MANUFACTURING CO., MICROWAVE OFFICE (MWO) of Applied Wave Research Inc., OmniVision of OmniVision Technologies, Inc. Openwave Openwave Systems Inc. RED HAT Red Hat, Inc. RFMD RF Micro Devices, Inc. SIRIUS of Sirius Sattelite Radio Inc. SOLARIS of Sun Microsystems, Inc. SPANSION of Spansion LLC Ltd. Symbian of Symbian Software Limited. TAIYO YUDEN of Taiyo Yuden Co. TEAKLITE of CEVA, Inc. TEKTRONIX of Tektronix Inc. TOKO of TOKO KABUSHIKI KAISHA TA. UNIX of X/Open Company Limited. VERILOG, PALLADIUM of Cadence Design Systems, Inc. VLYNQ of Texas Instruments Incorporated. VXWORKS, WIND RIVER of WIND RIVER SYSTEMS, INC. ZETEX of Diodes Zetex Limited. Last Trademarks Update 20-06-09 Data Sheet 3 Revision 1.0, 20--13
Table of Contents Table of Contents Table of Contents................................................................ 4 List of Figures................................................................... List of Tables.................................................................... 6 1 Features........................................................................ 7 2 Electrical Characteristics.......................................................... 8 3 Characteristic DC Diagrams...................................................... 4 Package Information SOT89...................................................... 12 Data Sheet 4 Revision 1.0, 20--13
NPN Silicon High-Voltage Transistors BFN18 1 Features Main features: Suitable for video output stages TV sets and switching power supplies High breakdown voltage Low collector-emitter saturation voltage Complementary types: BFN19 (PNP) Pb-free (RoHS compliant) package 1) Qualified according AEC Q1 SOT89-3D 1) Pb-containing package may be available upon special request Product Name Package Pin Configuration Marking BFN18 SOT89 1 = B 2 = C 3 = E 4 = C DE Data Sheet 7 Revision 1.0, 20--13
Electrical Characteristics 2 Electrical Characteristics Table 1 Absolute Maximum Ratings Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Collector-emitter voltage V CEO 300 V Collector-base voltage V CBO 300 V Emitter-base voltage V EBO V Collector current I C 200 ma Peak collector current I CM 00 ma Base current I B 0 ma Peak base current I BM 200 ma Total power dissipation- P tot 1. W T S = 120 C Junction temperature T j C Storage temperature T stg -6 C Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the device. Table 2 Thermal Resistance Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Junction - soldering point 1) R thjs 20 K/W 1) For calculation of R thja please refer to Application Note Thermal Resistance. Data Sheet 6 Revision 1.0, 20--13
Electrical Characteristics Table 3 DC Characteristics at T A = 2 C, Unless Otherwise Specified Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Collector emitter breakdown voltage V (BR)CEO 300 V I C = 1 ma, I B = 0 Collector-base breakdown voltage V (BR)CBO 300 V I C = 0 µa, I E = 0 Emitter-base breakdown voltage V (BR)EBO V I E = 0 µa, I C = 0 Collector-base cutoff current I CBO 0.1 µa V CB = 20 V, I E = 0 20 V CB = 20 V, I E = 0, T A = C Emitter-base cutoff current I EBO 0 na V EB = V, I C = 0 DC current gain 1) h FE 2 I C = 1 ma, V CE = V 40 I C = ma, V CE = V 30 I C = 30 ma, V CE = V Collector-emitter saturation voltage 1) V CEsat 0. V I C = 20 ma, I B = 2 ma Base emitter saturation voltage 1) V BEsat 0.9 V I C = 20 ma, I B = 2 ma 1)Pulse test: t < 300 µs; D < 2% Table 4 AC Characteristics at T A = 2 C Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Transition frequency f T 70 MHz I C = 20 MHz, V CE = V, f = 20 MHz Collector base capacitance C Cb 1. pf V CB = 30 V, f = 1 MHz Data Sheet 7 Revision 1.0, 20--13
Characteristic DC Diagrams 3 Characteristic DC Diagrams DC Current Gain h FE = f(i C ), V CE = V Operating Range I C = f(v CEO ), T A = 2 C, D = 0 3 BFN 16/18 EHP008 3 BFN 16/18 EHP0080 h FE Ι C ma 2 μs 2 1 0 μs 1ms 0 ms DC 1 0 0 ma Collector Current I C = f(v BE ), V CE = V -1 0 1 2 3 Ι C -1 0 1 2 3 V Collector Cutoff Current I CBO = f(t A ), V CBO = 200 V V CEO ma 3 BFN 16/18 EHP0082 na 4 BFN 16/18 EHP0084 Ι C 2 Ι CBO 3 max 1 2 1 typ 0 0-1 0 0. 1.0 V 1. -1 0 0 0 C V BE T A Data Sheet 8 Revision 1.0, 20--13
Characteristic DC Diagrams Transition Frequency f T = f(i C ), V CE = V 3 BFN 16/18 EHP0083 Collector Base Capacitance C cb = f(v CB ) Emitter Base Capacitance C eb = f(v EB ) 90 f T MHz 80 70 60 2 Ccb, Ceb [pf] 0 40 30 Ceb 20 1 ma Total Power Dissipation P tot = f(t S ) 0 1 2 3 Ι C 0 0 1 20 2 Vcb, Veb [V] Permissible Pulse Load P totmax / P totdc = f(t S ) Ccb 2 3 BFN 16/18 EHP0081 1.8 1.6 P P tot max tot DC t p = D T t p T Ptot [W] 1.4 1.2 1 0.8 0.6 0.4 2 1 D = 0 0.00 0.01 0.02 0.0 0.1 0.2 0. 0.2 0 0 0 0 Ts [ C] 0-6 - -4-3 -2 s 0 t p Data Sheet 9 Revision 1.0, 20--13
Package Information SOT89 4 Package Information SOT89 4. ±0.1 4 0.2 ±0.0 B 1. ±0.1 0.2 MAX. 1) 1.6 ±0.2 1) 1±0.1 2.±0.1 4 ±0.2 0.1 +0.1-0.1 2.7 1 2 3 1±0.2 1. 3 0.4 +0.2-0.1 0.1 M 0.2 B B x3 0.3 ±0.1 1) Ejector pin markings possible SOT89-PO V02 Figure 1 Package Outline 2.0 1.2 1.0 2. 0.8 0.8 0.7 SOT89-FP V02 Figure 2 Package Foot Print GA BAW78D Type code S 6 Pin 1 200, June Date code (YM) Manufacturer SOT89-MA.vsd Figure 3 Marking Example Data Sheet Revision 1.0, 20--13
Package Information SOT89 8 4.6 12 Pin 1 4.3 1.6 SOT89-TP V02 Figure 4 Tape Dimensions Packing Description Reel Ø180 mm = 1.000 Pieces/Reel Reel Ø330 mm = 4.000 Pieces/Reel Data Sheet 11 Revision 1.0, 20--13
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