Applications Ordering Information Part No. ECCN Description TGA2535-SM 3A001.b.2.b X-band Power Amplifier

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Applications Point-to-Point Radio X-Band Communications QFN 5x5mm 24L Product Features Functional Block Diagram Frequency Range: 10 12 GHz TOI: 43 dbm Power: 34.5 dbm Psat, 33 dbm P1dB Gain: 24 db Return Loss: 15 db Integrated Power Detector Bias: Vd = 6 V, Id = 1.3 A, Vg = -0.55 V Typical Package Dimensions: 5.0 x 5.0 x 0.85 mm 1 2 3 4 5 24 23 22 21 20 19 17 15 6 13 7 8 9 10 11 12 General Description The TriQuint TGA2535-SM is a X-Band Packaged Power Amplifier. The TGA2535-SM operates from 10 to 12 GHz and is designed using TriQuint s power phemt production process. The TGA2535-SM typically provides 43dBm of TOI at 20dBm Pout/Tone, 33 dbm of output power at 1dB gain compression, and the small signal gain is 24 db. The TGA2535-SM is available in a low-cost, surface mount 24 lead 5x5 QFN package and is ideally suited for Point-to-Point Radio, and X-Band Communications. Pin Configuration Pin # Symbol 1, 2, 3, 5, 6, 9, 12, 13,, 15, 17 N/C 4 RF IN 7, 8, 23, 24 Vg RF OUT 10, 11, 20, 21 Vd Vref 19 Vdet 22 GND Lead-free and RoHS compliant Evaluation Boards are available upon request. Ordering Information Part No. ECCN Description TGA2535-SM 3A001.b.2.b X-band Power Amplifier Standard T/R size = 500 pieces on a 7 reel. Data Sheet: Rev A 10/25/11-1 of 13 - Disclaimer: Subject to change without notice

Specifications Absolute Maximum Ratings Parameter Rating Drain Voltage,Vd +8 V Gate Voltage,Vg -3 to 0 V Drain Current, Id 2.24 A Gate Current, Ig -11 to 90 ma Power Dissipation, Pdiss 17.9 W RF Input Power, CW, 50Ω,T = 25ºC 27 dbm Channel Temperature, Tch 200 o C Mounting Temperature ( Seconds) 260 o C Storage Temperature -40 to 150 o C Recommended Operating Conditions Parameter Min Typical Max Units Vd 6 V Id 1.3 A Id_drive (Under RF Drive) 1.6 A Vg -0.55 V Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Electrical Specifications Test conditions unless otherwise noted: 25ºC, Vd = 6 V, Id = 1.3 A, Vg = -0.55 V Typical. Parameter Min Typical Max Units Operational Frequency Range 10.0 12.0 GHz Gain 20.5 24 db Input Return Loss -15-10 db Output Return Loss -15-12 db Output Power @ Saturation 33 34.5 dbm Output Power @ 1 db Gain Compression 31.5 33 dbm Output TOI @ Pout/Tone = 20 dbm 41 43 dbm Noise Figure 10 db Gain Temperature Coefficient -0.031 db/ C Power Temperature Coefficient -0.004 dbm/ C Data Sheet: Rev A 10/25/11-2 of 13 - Disclaimer: Subject to change without notice

Specifications (cont.) Thermal and Reliability Information Parameter Condition Rating Thermal Resistance, θ JC, measured to back of package Tbase = 85 C θ JC = 5.77 C/W Tbase = 85 C, Vd = 6 V, Id = 1.3 A, Tch = 1 C Channel Temperature (Tch), and Median Lifetime (Tm) Pdiss = 7.8 W Tm = 5.9 E+6 Hours Channel Temperature (Tch), and Median Lifetime (Tm) Tbase = 85 C, Vd = 6 V, Id = 1.6 A, Tch = 124 C Under RF Drive Pout = 34.5 dbm, Pdiss = 6.78 W Tm = 1.0 E+7 Hours 1.E+ Median Lifetime (Tm) vs. Channel Temperature (Tch) Median Lifetime, Tm, (Hours) 1.E+13 1.E+12 1.E+11 1.E+10 1.E+09 1.E+08 1.E+07 1.E+06 1.E+05 FET3 1.E+04 25 50 75 100 125 150 175 200 Channel Temperature, Tch, ( C) Data Sheet: Rev A 10/25/11-3 of 13 - Disclaimer: Subject to change without notice

TGA2535-SM X-Band Power Amplifier Typical Performance 28 S-Parameters vs. Frequency 0 Power vs. Frequency Gain (db) 26 24 22 20 Gain IRL ORL 9 13 4 8 12 20 24 28 Return Loss (db) Output Power (dbm) 35 34 33 31 29 Psat P1dB Output Power (dbm), Gain (db) Power, Gain, Id vs. Input Power @ 10 GHz 34 28 26 24 22 20-10 -8-6 -4-2 0 2 4 6 8 10 12 Input Power (dbm) Power Gain Id 1.70 1.65 1.60 1.55 1.50 1.45 1.40 1.35 1. 1.25 1.20 Id (A) Power Added Efficency (%) 28 26 24 22 20 PAE vs. Frequency PAE @ Psat PAE @ P1dB Vdiff (V) 10 1 0.1 0.01 0.001 Power Detector vs. Pout vs. Frequency -5 0 5 10 15 20 25 35 Output Power (dbm) 10GHz 11GHz 11.7GHz Noise Figure (db) 12 10 8 6 4 2 0 Noise Figure vs. Frequency Data Sheet: Rev A 10/25/11-4 of 13 - Disclaimer: Subject to change without notice

Typical Performance (cont.) Output TOI (dbm) 46 45 44 43 42 41 40 39 38 37 TOI vs. Frequency vs. Pout/Tone Pout/Tone = 21dBm Pout/Tone = 20dBm Pout/Tone = 19dBm IM3 (dbc) - -35-40 -45-50 -55-60 -65-70 IM3 vs. Pout/Tone vs. Frequency 10.0GHz 11.0GHz 11.7GHz 12.0GHz 13 15 17 19 20 21 22 23 Pout/Tone (dbm) -50 IM5 vs. Pout/Tone vs. Frequency 28 Gain vs. Frequency vs. Id Vd = 6-6.5 V, Id = 0.9-1.3 A, +25 0 C IM5 (dbc) -55-60 -65-70 -75-80 -85-90 10.0GHz 11.0GHz 11.7GHz 12.0GHz 13 15 17 19 20 21 22 23 Gain db 26 24 22 20 6V 1.3A 6V 1.1A 6V 0.9A 6.5V 1.0A 9 13 Pout/Tone (dbm) Saturated Power vs. Frequency vs. Id Vd = 6-6.5 V, Id = 0.9-1.3 A, +25 0 C P1dB vs. Frequency vs. Id Vd = 6-6.5 V, Id = 0.9-1.3 A, +25 0 C 35 35 Psat (dbm) 34 33 31 29 6V 1.3A 6V 1.1A 6V 0.9A 6.5V 1.0A P1dB (dbm) 34 33 31 29 6V 1.3A 6V 1.1A 6V 0.9A 6.5V 1.0A Data Sheet: Rev A 10/25/11-5 of 13 - Disclaimer: Subject to change without notice

Typical Performance (cont.) Tone (dbm) OTOI @ 20 dbm Pout/ 46 45 44 43 42 41 40 39 38 37 TOI vs. Frequency vs. Bias Vd = 6-6.5 V, Id = 0.9-1.3 A, +25 0 C 6V 1.3A 6V 1.1A 6V 0.9A 6.5V 1.0A Noise Figure (db) 12 10 8 6 4 2 0 Noise Figure vs. Frequency vs. Bias Vd = 6-6.5 V, Id = 0.9-1.3 A, +25 0 C 6V 1.3A 6V 1.1A 6V 0.9A 6.5V 1.0A Gain (db) 28 26 24 22 20 Gain vs. Frequency vs. Temperature Vd = 6 V, Id = 1.3 A, Vg = -0.55 V Typical 33-40C -40C +25C +25C +85C 31 +85C 9 13 Psat (dbm) 35 34 29 Psat vs. Frequency vs. Temperature Vd = 6 V, Id = 1.3 A, Vg = -0.55 V Typical P1dB (dbm) 35 34 33 31 29 P1dB vs. Frequency vs. Temperature Vd = 6 V, Id = 1.3 A, Vg = -0.55 V Typical -40C +25C +85C OTOI @ 20 dbm Pout/Tone (dbm) 46 45 44 43 42 41 40 39 38 37 TOI vs. Frequency vs. Temperature Vd = 6 V, Id = 1.3 A, Vg = -0.55 V Typical -40C +25C +85C Data Sheet: Rev A 10/25/11-6 of 13 - Disclaimer: Subject to change without notice

TGA2535-SM X-Band Power Amplifier Application Circuit C1 100 pf C4 1 uf 24 23 22 20 19 Vdet R1 21 100K Ohms Vdiff +_ 6 V J1 RF IN 1 2 3 4 5 6 2535 YYWW XXXX 17 15 13 Vref R2 100K Ohms J2 RF OUT Vd = 6 V Id = 1.3 A 7 8 9 10 11 12 Vg = -0.55 V Typical C2 100 pf C5 1 uf C3 100 pf C6 1 uf Vg can be biased from either side (pins 7 and 8 or pins 23 and 24), and the non-biased side can be left open. Vd must be biased from both sides (pins 10, 11, 20, and 21). Bias-up Procedure Vg set to -1.5 V Vd set to +6 V Adjust Vg more positive until quiescent Id is 1.3A. This will be ~ Vg = -0.55 V Apply RF signal to RF Input Bias-down Procedure Turn off RF supply Reduce Vg to -1.5V. Ensure Id ~ 0 ma Turn Vd to 0 V Turn Vg to 0 V The TGA2535-SM will be marked with the 2535 designator and a lot code marked below the part designator. The YY represents the last two digits of the year the part was manufactured, the WW is the work week, and the XXXX is an autogenerated number. Data Sheet: Rev A 10/25/11-7 of 13 - Disclaimer: Subject to change without notice

Pin Description 24 23 22 21 20 19 1 2 3 4 5 6 25 17 15 13 7 8 9 10 11 12 Pin Symbol Description 1, 2, 3, 5, 6, 13,, 15, 17 N/C No internal connection; must be grounded on PCB 4 RF IN Input, matched to 50 ohms 7, 8, 23, 24 Vg Gate voltage. ESD protection included; Bias network is required; can be biased from either side (pins 7 and 8 or pins 23 and 24), and non-biased side can be left opened; see Application Circuit on page 7 as an example. 9, 12 N/C No internal connection; can be grounded on PCB or left open 10, 11, 20, 21 Vd Drain voltage. Bias network is required; must be biased from both sides; see Application Circuit on page 7 as an example. RF OUT Output, matched to 50 ohms Vref Reference diode output voltage 19 Vdet Detector diode output voltage; varies with RF output power 22 GND Internal grounding; can be grounded on PCB or left open 25 GND Backside Paddle. Multiple vias should be employed to minimize inductance and thermal resistance; see Mounting Configuration on page 11 for suggested footprint. Data Sheet: Rev A 10/25/11-8 of 13 - Disclaimer: Subject to change without notice

TGA2535-SM X-Band Power Amplifier Applications Information PC Board Layout Top RF layer is 0.008 thick Rogers RO4003, є r = 3.38. Metal layers are 1-oz copper. Microstrip 50 Ω line detail: width = 0.0175. The pad pattern shown has been developed and tested for optimized assembly at TriQuint Semiconductor. The PCB land pattern has been developed to accommodate lead and package tolerances. Since surface mount processes vary from company to company, careful process development is recommended. For further technical information, refer to the TGA2533-SM Product Information page. C4 R1 R2 C1 C2 C3 C5 C6 Bill of Material Ref Des Value Description Manufacturer Part Number C1, C2, C3 100 pf Cap, 0402, 50 V, 5%, COG various C4, C5, C6 1 uf Cap, 0603, 25 V, 10%, X5R various R1, R2 100K Ohms Res, 0603, 0.1 W, 5%, SMD various Data Sheet: Rev A 10/25/11-9 of 13 - Disclaimer: Subject to change without notice

Mechanical Information Package Information and Dimensions All dimensions are in millimeters. This package is lead-free/rohs-compliant with a copper alloy base (CDA194), and the plating material on the leads is 100% matte Sn. It is compatible with both lead-free (maximum 260 C reflow temperature) and tin-lead (maximum 245 C reflow temperature) soldering processes. Data Sheet: Rev A 10/25/11-10 of 13 - Disclaimer: Subject to change without notice

Mechanical Information (cont.) Mounting Configuration All dimensions are in millimeters (inches). Notes: 1. A heatsink underneath the area of the PCB for the mounted device is recommended for proper thermal operation. 2. Ground / thermal vias are critical for the proper performance of this device. Vias have a final plated thru diameter of.40 mm (.0 )..675.675 Tape and Reel Information Tape and reel specifications for this part are also available on the TriQuint website in the Application Notes section. Standard T/R size = 500 pieces on a 7 x 0.5 reel. CARRIER AND COVER TAPE DIMENSIONS Part Feature Symbol Size (in) Size (mm) Cavity Length A0 0.207 5.25 Width B0 0.207 5.25 Depth K0 0.043 1.10 Pitch P1 0.315 8.00 Distance Between Centerline Cavity to Perforation Length Direction P2 0.079 2.00 Cavity to Perforation Width Direction F 0.217 5.50 Cover Tape Width C 0.374 9.5 Carrier Tape Width W 0.472 12.0 Data Sheet: Rev A 10/25/11-11 of 13 - Disclaimer: Subject to change without notice

Product Compliance Information ESD Information ESD Rating: Class 0 Value: 200 V and < 250 V Test: Human Body Model (HBM) Standard: JEDEC Standard JESD22-A1 MSL Rating Level 1 at +260 C convection reflow The part is rated Moisture Sensitivity Level 1 at 260 C per JEDEC standard IPC/JEDEC J-STD-020. Solderability Compatible with the latest version of J-STD-020, Lead free solder, 260 C This part is compliant with EU 2002/95/EC RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). This product also has the following attributes: Lead Free Halogen Free (Chlorine, Bromine) Antimony Free TBBP-A (C 15 H 12 Br 4 0 2 ) Free PFOS Free SVHC Free ECCN US Department of Commerce 3A001.b.2.b Recommended Soldering Temperature Profile Data Sheet: Rev A 10/25/11-12 of 13 - Disclaimer: Subject to change without notice

TGA2535-SM X-Band Power Amplifier Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations, and information about TriQuint: Web: www.triquint.com Tel: +1.972.994.8465 Email: info-sales@tqs.com Fax: +1.972.994.8504 For technical questions and application information: Email: info-networks@tqs.com Important Notice The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for TriQuint products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Data Sheet: Rev A 10/25/11-13 of 13 - Disclaimer: Subject to change without notice