BGB719N7ESD. Data Sheet. RF & Protection Devices. Low Noise Amplifier MMIC for FM Radio Applications. Revision 1.1,

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Low Noise Amplifier MMIC for FM Radio Applications Data Sheet Revision 1.1, 2012-10-30 RF & Protection Devices

Edition 2012-10-30 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

BGB719N7ESD, Low Noise Amplifier MMIC for FM Radio Applications Revision History: 2012-10-30, Revision 1.1 Page Subjects (changes since previous revision) This data sheet replaces the revision from 2011-10-10. The product itself has not been changed and the device characteristics remain unchanged. Only the product description and information available in the data sheet have been expanded and updated. Trademarks of Infineon Technologies AG AURIX, C166, CanPAK, CIPOS, CIPURSE, EconoPACK, CoolMOS, CoolSET, CORECONTROL, CROSSAVE, DAVE, DI-POL, EasyPIM, EconoBRIDGE, EconoDUAL, EconoPIM, EconoPACK, EiceDRIVER, eupec, FCOS, HITFET, HybridPACK, I²RF, ISOFACE, IsoPACK, MIPAQ, ModSTACK, my-d, NovalithIC, OptiMOS, ORIGA, POWERCODE ; PRIMARION, PrimePACK, PrimeSTACK, PRO-SIL, PROFET, RASIC, ReverSave, SatRIC, SIEGET, SINDRION, SIPMOS, SmartLEWIS, SOLID FLASH, TEMPFET, thinq!, TRENCHSTOP, TriCore. Other Trademarks Advance Design System (ADS) of Agilent Technologies, AMBA, ARM, MULTI-ICE, KEIL, PRIMECELL, REALVIEW, THUMB, µvision of ARM Limited, UK. AUTOSAR is licensed by AUTOSAR development partnership. Bluetooth of Bluetooth SIG Inc. CAT-iq of DECT Forum. COLOSSUS, FirstGPS of Trimble Navigation Ltd. EMV of EMVCo, LLC (Visa Holdings Inc.). EPCOS of Epcos AG. FLEXGO of Microsoft Corporation. FlexRay is licensed by FlexRay Consortium. HYPERTERMINAL of Hilgraeve Incorporated. IEC of Commission Electrotechnique Internationale. IrDA of Infrared Data Association Corporation. ISO of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB of MathWorks, Inc. MAXIM of Maxim Integrated Products, Inc. MICROTEC, NUCLEUS of Mentor Graphics Corporation. MIPI of MIPI Alliance, Inc. MIPS of MIPS Technologies, Inc., USA. murata of MURATA MANUFACTURING CO., MICROWAVE OFFICE (MWO) of Applied Wave Research Inc., OmniVision of OmniVision Technologies, Inc. Openwave Openwave Systems Inc. RED HAT Red Hat, Inc. RFMD RF Micro Devices, Inc. SIRIUS of Sirius Satellite Radio Inc. SOLARIS of Sun Microsystems, Inc. SPANSION of Spansion LLC Ltd. Symbian of Symbian Software Limited. TAIYO YUDEN of Taiyo Yuden Co. TEAKLITE of CEVA, Inc. TEKTRONIX of Tektronix Inc. TOKO of TOKO KABUSHIKI KAISHA TA. UNIX of X/Open Company Limited. VERILOG, PALLADIUM of Cadence Design Systems, Inc. VLYNQ of Texas Instruments Incorporated. VXWORKS, WIND RIVER of WIND RIVER SYSTEMS, INC. ZETEX of Diodes Zetex Limited. Last Trademarks Update 2011-11-11 Data Sheet 3 Revision 1.1, 2012-10-30

Table of Contents Table of Contents Table of Contents................................................................ 4 List of Figures................................................................... 5 List of Tables.................................................................... 6 1 Product Brief................................................................... 7 2 Features........................................................................ 8 3 Pin Configuration................................................................ 9 4 Functional Block Diagram........................................................ 10 5 Maximum Ratings............................................................... 11 6 Thermal Characteristics.......................................................... 12 7 Operation Conditions............................................................ 12 8 Electrical Characteristics......................................................... 13 8.1 DC Characteristics............................................................... 13 8.1.1 Typical DC Characteristic Curves.................................................. 13 8.2 AC Characteristics............................................................... 14 8.2.1 Typical AC Characteristic Curves.................................................. 14 9 Package Information TSNP-7-6.................................................... 16 Data Sheet 4 Revision 1.1, 2012-10-30

List of Figures List of Figures Figure 3-1 Pinning of BGB719N7ESD in TSNP-7-6............................................. 9 Figure 4-1 Functional Block Diagram........................................................ 10 Figure 4-2 Application Board Drawing....................................................... 10 Figure 6-1 Total Power Dissipation P tot = f (T s )................................................ 12 Figure 8-1 I CC as a function of V CC, V Ctrl = 3 V................................................. 13 Figure 8-2 Input and Output matching curves................................................. 14 Figure 8-3 I CC as a function of T A........................................................... 15 Figure 9-1 Package Outline............................................................... 16 Figure 9-2 Package Footprint.............................................................. 16 Figure 9-3 Marking Description (Marking BGB719N7ESD: AC)................................... 16 Figure 9-4 Tape Dimensions.............................................................. 16 Data Sheet 5 Revision 1.1, 2012-10-30

List of Tables List of Tables Table 3-1 Pinning Table.................................................................. 9 Table 4-1 Bill of Materials............................................................... 10 Table 5-1 Maximum Ratings at T A = 25 C.................................................. 11 Table 5-2 ESD Robustness.............................................................. 11 Table 6-1 Thermal Resistance............................................................ 12 Table 7-1 Operation Conditions at T A = 25 C................................................ 12 Table 8-1 DC Characteristics at T A = 25 C.................................................. 13 Table 8-2 AC characteristics in the FM Radio LNA Application................................... 14 Data Sheet 6 Revision 1.1, 2012-10-30

Product Brief 1 Product Brief So-called active antenna modules containing a unique passive structure tailored for FM radio and directly interfaced to appropriate amplifier circuitry are rapidly gaining market acceptance in emerging mobile device applications. High gain, low noise amplifiers with small footprints and high robustness against electrostatic discharge are key components for these active antenna designs. The BGB719N7ESD fulfills all the necessary criteria for such active antennas and is able to solve the main problems in embedded active FM antenna designs for handset devices enhancing the receiver sensitivity and consuming less power and less board space. The device is based on Infineon Technologies cost effective Silicon Germanium (SiGe:C) technology and comes in a small leadless green package with visible leads enabling optical inspection of soldering quality. Data Sheet 7 Revision 1.1, 2012-10-30

Features 2 Features High performance FM Radio LNA with integrated biasing Frequency range: 10 MHz to 1 GHz Low external parts count Super miniature low profile leadless package TSNP-7-6, 1.26 x 1.4 x 0.37 mm High gain at only 2.8 ma current consumption Integrated active biasing circuit enables stable operating point against temperature-, supply voltage- and processing-variations Integrated ESD protection for all pins (1.5 kv, HBM) High input compression point High input impedance Excellent noise figure from latest SiGe:C technology Supply voltage: 1.5 V to 4.0 V Power-off function Pb-free (RoHS compliant) and halogen-free package Qualification report according to AEC-Q101 available Applications Low noise amplifier and active matching for FM reception with small antennas in all kinds of mobile devices such as cell phones, PDAs, portable FM Radio, MP3 players Low noise amplifier at 13.56 MHz for Near Field Communication (NFC) applications Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Product Name Package Marking BGB719N7ESD TSNP-7-6 AC Data Sheet 8 Revision 1.1, 2012-10-30

Pin Configuration 3 Pin Configuration 6 5 4 7 1 2 3 TSNP-7-6 Figure 3-1 Pinning of BGB719N7ESD in TSNP-7-6 Table 3-1 Pinning Table Pin Name Function 1 V Ctrl On/Off control voltage 2 RF IN RF input 3 GND RF RF GND 4 NC Not connected 5 RF OUT RF output 6 V CC Supply voltage 7 GND DC DC GND Data Sheet 9 Revision 1.1, 2012-10-30

Functional Block Diagram 4 Functional Block Diagram The functional block in Figure 4-1 shows the principal schematic how the BGB719N7ESD is used in a circuit. The Power On/Off function is controlled by applying V Ctrl. Base- and collector voltages are applied internally. BGB719N7ESD DC, V Ctrl In V Ctrl RF in 1 V CC C in C out Out 2 Bias Circuit LNA 6 5 RF out C BYP DC, V CC GND RF 3 4 NC GND DC 7 (on package backside) BGB719N7ESD function block Figure 4-1 Functional Block Diagram Table 4-1 Bill of Materials Component Value Manufacturer / Type Function C IN 330 pf Various / 0402 DC blocking C OUT 330 pf Various / 0402 DC blocking C BYP 47 nf Various / 0402 Bypass capacitor Figure 4-2 Application Board Drawing Data Sheet 10 Revision 1.1, 2012-10-30

Maximum Ratings 5 Maximum Ratings Table 5-1 Maximum Ratings at T A = 25 C Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Supply voltage V CC 4.0 V Supply current at V CC pin I CC 25 ma DC current at RF IN Pin I B 3 ma On/Off control voltage V ctrl V CC V Total power dissipation 1) P tot 100 mw T S 112 C Junction temperature T J 150 C Storage temperature T Stg -55 150 C 1) T S is the soldering point temperature. T S is measured at the GND pin (7) at the soldering point to the pcb Table 5-2 ESD Robustness Testing Model Standard Value Unit Human Body Model JESD22-A114-B 1500 V Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. Data Sheet 11 Revision 1.1, 2012-10-30

Thermal Characteristics 6 Thermal Characteristics Table 6-1 Thermal Resistance Parameter Symbol Values Unit Note / Min. Typ. Max. Test Condition Junction - soldering point 1) R thjs 375 K/W 1)For the definition of R thjs please refer to Application Note AN077 (Thermal Resistance Calculation) 120 100 80 Ptot [mw] 60 40 20 0 0 50 100 150 Ts [ C] Figure 6-1 Total Power Dissipation P tot = f (T s ) 7 Operation Conditions Table 7-1 Operation Conditions at T A = 25 C Parameter Symbol Values Unit Note / Min. Typ. Max. Test Condition Supply voltage V CC 1.5 3.0 4.0 V Voltage Ctrl On/Off pin in On mode V ctrl-on 1.2 3.0 V CC V Voltage Ctrl On/Off pin in Off mode V ctrl-off -0.3 0 0.3 V Data Sheet 12 Revision 1.1, 2012-10-30

Electrical Characteristics 8 Electrical Characteristics 8.1 DC Characteristics Table 8-1 DC Characteristics at T A = 25 C Parameter Symbol Values Unit Note / Min. Typ. Max. Test Condition Supply current I CC 2.3 2.8 3.3 ma V CC = 3 V V ctrl = 3 V Small signal operation Supply current in Off mode I CC-off 1 6 µa V CC = 4.0 V V ctrl = 0 V Current into Ctrl On/Off pin in On mode I ctrl-on 6 9 µa V CC = 3 V V ctrl = 3 V Current into Ctrl On/Off pin in Off mode I ctrl-off 0.3 µa V CC = 4.0 V V ctrl = 0 V 8.1.1 Typical DC Characteristic Curves The measurement Setup is an application circuit according to Figure 4-1. T A = 25 C Figure 8-1 I CC as a function of V CC, V Ctrl = 3 V Data Sheet 13 Revision 1.1, 2012-10-30

Electrical Characteristics 8.2 AC Characteristics Table 8-2 AC characteristics in the FM Radio LNA Application 1) Parameter Symbol Values Unit Note / Min. Typ. Max. Test Condition Insertion power gain S 21 2 13.5 db Input return loss 2) RL IN 0.5 3) db Output return loss 2) RL OUT 11 db Noise figure 4) NF 50 1.2 db Z S = 50 Ω Input 1dB gain compression point 2) IP -1dB -6 dbm Input 3rd Order Intercept Point 2) IIP 3-14 dbm P RFIN = -30 dbm 1) As described in AN255, T A = 25 C, V CC = 3 V, V Ctrl = 3 V, f = 100 MHz 2) Verified by random sampling 3) High LNA input impedance leads to power matching with high ohmic antennas 4) A low pass filter prevents radio broadcast signals from distorting the NF measurement 8.2.1 Typical AC Characteristic Curves The measurement Setup is an application circuit according to Figure 4-1. T A = 25 C Figure 8-2 Input and Output matching curves Data Sheet 14 Revision 1.1, 2012-10-30

Electrical Characteristics Figure 8-3 I CC as a function of T A Data Sheet 15 Revision 1.1, 2012-10-30

Package Information TSNP-7-6 9 Package Information TSNP-7-6 Top view Bottom view +0.025 0.375-0.015 0.02 MAX. 1.26±0.05 1) 1.16 ±0.05 0.96 ±0.05 1.175 ±0.05 1) 0.5±0.05 7 4 5 6 1.4 ±0.05 6 x 0.225±0.05 1) Pin 1 marking 3 2 1 1) 6 x 0.2 ±0.05 Figure 9-1 Package Outline 1) Dimension applies to plated terminals TSNP-7-6-PO V01 1.55 1.21 0.51 0.2 0.2 0.35 0.45 SMD 1.55 1.21 0.51 0.2 0.2 0.35 0.45 0.25 0.25 0.23 0.25 0.23 0.35 0.25 0.25 0.23 0.25 0.23 0.35 Figure 9-2 Package Footprint Copper Solder mask Vias Stencil apertures TSNP-7-6-FP V01 Figure 9-3 Marking Description (Marking BGB719N7ESD: AC) 4 0.5 8 1.7 Pin 1 marking 1.6 TSNP-7-6-TP V03 Figure 9-4 Tape Dimensions Data Sheet 16 Revision 1.1, 2012-10-30

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