General Description The MDFS11N6 uses advanced MagnaChip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDFS11N6 is suitable device for SMPS, high Speed switching and general purpose applications. MDFS11N6 N-Channel MOSFET 6V, 11A,.55Ω Features V DS = 6V = 11A @ V GS = 1V R DS(ON).55Ω @ V GS = 1V Applications Power Supply PFC High Current, High Speed Switching G D S TO-22FT Absolute Maximum Ratings (Ta = 25 o C) Characteristics Symbol Rating Unit Drain-Source Voltage V DSS 6 V Gate-Source Voltage V GSS ±3 V Continuous Drain Current ( ) T C=25 o C 11 A T C=1 o C 6.9 A Pulsed Drain Current (1) M 44 A Power Dissipation T C=25 o C P D 49 W Derate above 25 o C.39 W/ o C Peak Diode Recovery dv/dt (3) dv/dt 4.5 V/ns Single Pulse Avalanche Energy (4) E AS 72 mj Junction and Storage Range T J, T stg -55~15 Id limited by maximum junction temperature o C Thermal Characteristics Characteristics Symbol Rating Unit Thermal Resistance, Junction-to-Ambient (1) R θja 62.5 Thermal Resistance, Junction-to-Case (1) R θjc 2.55 o C/W 1
Ordering Information Part Number Temp. Range Package Packing RoHS Status MDFS11N6TH -55~15 o C TO-22FT Tube Halogen Free Electrical Characteristics (Ta = 25 o C) Static Characteristics Characteristics Symbol Test Condition Min Typ Max Unit Drain-Source Breakdown Voltage BV DSS = 25μA, V GS = V 6 - - Gate Threshold Voltage V GS(th) V DS = V GS, = 25μA 3. - 5. Drain Cut-Off Current SS V DS = 6V, V GS = V - - 1 μa Gate Leakage Current I GSS V GS = ±3V, V DS = V - - 1 na Drain-Source ON Resistance R DS(ON) V GS = 1V, = 5.5A -.45.55 Ω Forward Transconductance g fs V DS = 3V, = 5.5A - 13 - S Dynamic Characteristics Total Gate Charge Q g - 38.4 - Gate-Source Charge Q gs V DS = 48V, = 11A, V GS = 1V - 11.2 - Gate-Drain Charge Q gd - 14 - Input Capacitance C iss - 17 - Reverse Transfer Capacitance C rss V DS = 25V, V GS = V, f = 1.MHz - 6.2 - Output Capacitance C oss - 184 - Turn-On Delay Time t d(on) - 38 - Rise Time t r V GS = 1V, V DS = 3V, = 11A, - 5 - Turn-Off Delay Time t d(off) R G = 25Ω - 76 - Fall Time t f - 33 - Drain-Source Body Diode Characteristics Maximum Continuous Drain to Source Diode Forward Current I S - 11 - A Source-Drain Diode Forward Voltage V SD I S = 11A, V GS = V - - 1.4 V Body Diode Reverse Recovery Time t rr I F = 11A, dl/dt = 1A/μs - 43 - ns Body Diode Reverse Recovery Charge Q rr - 4. - μc V nc pf ns Note : 1. Pulse width is based on R θjc & R θja and the maximum allowed junction temperature of 15 C. 2. Pulse test: pulse width 3us, duty cycle 2%, pulse width limited by junction temperature T J(MAX)=15 C. 3. I SD 11A, di/dt 2A/us, V DD=5V, R g =25Ω, Starting T J=25 C 4. L=1.9mH, I AS=11A, V DD=5V, R g =25Ω, Starting T J=25 C 2
[A] BV DSS, (Normalized) Drain-Source Breakdown Voltage,Drain Current [A] R DS(ON) [Ω ] 3 25 Reverse Drain Current [A] R DS(ON), (Normalized) Drain-Source On-Resistance 2 15 1 5 V gs =5.5V =6.V =6.5V =7.V =8.V =1.V =15.V Notes 1. 25 μs Pulse Test 2. T C =25 5 1 15 2 25 V DS,Drain-Source Voltage [V] Fig.1 On-Region Characteristics 1..9.8.7.6.5.4 5 1 15 2 25 3,Drain Current [A] V GS =1.V V GS =2V Fig.2 On-Resistance Variation with Drain Current and Gate Voltage 3. 1.2 2.5 1. V GS = 1 V 2. = 5.5 A 1. V GS = V 2. 25 s Pulse Test 1.1 2. 1.5 1. 1..9.5. -1-5 5 1 15 2 T J, Junction [ o C] Fig.3 On-Resistance Variation with.8-5 5 1 15 2 T J, Junction [ o C] Fig.4 Breakdown Voltage Variation vs. 1 * Notes ; 1. V DS =3V 1 1. V GS = V 2. = 25 μa 1 15 25-55 R 1 15 25.1 2 4 6 8 1 V GS [V] Fig.5 Transfer Characteristics.1..2.4.6.8 1. 1.2 1.4 V SD, Source-Drain Voltage [V] Fig.6 Body Diode Forward Voltage Variation with Source Current and 3
Z θ JC (t), Thermal Response Power (W), Drain Current [A], Drain Current [A] V GS, Gate-Source Voltage [V] Capacitance [pf] 1 Note : = 11A 12V 3V 48V 8 6 4 2 2 4 6 8 1 12 14 16 18 2 22 24 26 28 3 32 34 Q G, Total Gate Charge [nc] Fig.7 Gate Charge Characteristics 4 38 36 34 32 3 28 26 24 22 2 18 16 14 12 1 8 6 4 2 C oss C iss C rss.1 1 1 V DS, Drain-Source Voltage [V] C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd Fig.8 Capacitance Characteristics Notes ; 1. V GS = V 2. f = 1 MHz 1 2 Operation in This Area is Limited by R DS(on) 1 s 14 1 s 12 1 1 1 ms 1 ms 1 1 1 ms DC 1s 8 6 1-1 4 1-2 Single Pulse T J =Max rated T C =25 1-1 1 1 1 1 2 V DS, Drain-Source Voltage [V] 2 25 5 75 1 125 15 T C, Case [ ] Fig.9 Maximum Safe Operating Area Fig.1 Maximum Drain Current vs. Case 1 1 16 14 12 single Pulse R thjc = 2.55 /W T C = 25 1 D=.5 1 8 1-1 1-2.2.1.5.2.1 single pulse Duty Factor, D=t 1 /t 2 PEAK T J = P DM * Z θ JC * R θ JC (t) + T C R Θ JC =2.55 /W 1-5 1-4 1-3 1-2 1-1 1 1 1 t 1, Rectangular Pulse Duration [sec] Fig.11 Transient Thermal Response Curve 6 4 2 1E-5 1E-4 1E-3.1.1 1 1 Pulse Width (s) Fig.12 Single Pulse Maximum Power Dissipation 4
L L1 D G Q1 Physical Dimensions ΦR E 3 Leads, TO-22FT A F 3 x b1 3 x b 2 x e c Q θ Note: PKG Body Sizes exclude Mold Flash & Gate Burrs [Unit:mm] 5
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