UNISONIC TECHNOLOGIES CO., LTD 3N8 3. Amps, 8Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N8 provide excellent R DS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * R DS(ON) < 4.2Ω @V GS = 1 V * Ultra Low Gate Charge ( typical 19 nc ) * Low Reverse Transfer Capacitance ( C RSS = Typical 11 pf ) * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness SYMBOL ORDERING INFORMATION Ordering Number Pin Assignment Package Lead Free Halogen Free 1 2 3 Packing 3N8L-TA3-T 3N8G-TA3-T TO-22 G D S Tube 3N8L-TF3-T 3N8G-TF3-T TO-22F G D S Tube 3N8L-TF1-T 3N8G-TF1-T TO-22F1 G D S Tube 3N8L-TF2-T 3N8G-TF2-T TO-22F2 G D S Tube 3N8L-TM3-T 3N8G-TM3-T TO-251 G D S Tube 3N8L-TMS4-R 3N8G-TMS4-R TO-251S4 G D S Tape Reel 3N8L-TN3-R 3N8G-TN3-R TO-252 G D S Tape Reel Note: Pin Assignment: G: Gate D: Drain S: Source 1 of 8 Copyright 216 Unisonic Technologies Co., Ltd
3N8 MARKING UNISONIC TECHNOLOGIES CO., LTD 2 of 8
3N8 ABSOLUTE MAXIMUM RATINGS (T C =25 C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage (V GS =V) V DSS 8 V Drain-Gate Voltage (R G =2kΩ) V DGR 8 V Gate-Source Voltage V GSS ±3 V Gate-Source Breakdown Voltage (I GS =±1mA) BV GSO 3 (MIN) V Insulation Withstand Voltage (DC) TO-22F/ TO-22F1 V ISO 25 V Avalanche Current (Note 2) I AR 3 A Continuous Drain Current I D 3 A Pulsed Drain Current I DM 1 A Single Pulse Avalanche Energy (Note 3) E AS 17 mj Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-22 7 TO-22F/ TO-22F1 25 Power Dissipation TO-22F2 P D W TO-251/TO-251S4 TO-252 5 Junction Temperature T J +15 C Storage Temperature T STG -55 ~ +15 C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by T J(MAX). 3. Starting T J =25 C, I D =I AR, V DD =5V 4. I SD 2.5A, di/dt 2A/μs, V DD BV DSS, T J T J(MAX). THERMAL DATA Junction to Ambient Junction to Case PARAMETER SYMBOL RATING UNIT TO-22TO-22F 62.5 TO-22F1/TO-22F2 θ JA C/W TO-251/TO-251S4 11 TO-252 TO-22 1.78 TO-22F/ TO-22F1 5 TO-22F2 θ JC C/W TO-251/TO-251S4 2.5 TO-252 UNISONIC TECHNOLOGIES CO., LTD 3 of 8
3N8 ELECTRICAL CHARACTERISTICS (T C =25 C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS =V, I D =25μA 8 V Drain-Source Leakage Current I DSS V DS =8V, V GS =V 1 μa Gate-Source Leakage Current I GSS V GS =±3V, V DS =V ±1 μa ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS =V GS, I D =25μA 3 3.75 4.5 V Static Drain-Source On-State Resistance R DS(ON) V GS =1V, I D =1.5A 3.2 4.2 Ω Forward Transconductance (Note 1) g FS V DS =15V, I D =1.5A 2.1 S DYNAMIC CHARACTERISTICS Input Capacitance C ISS 485 pf Output Capacitance C OSS V DS =25V, V GS =V, f=1mhz 57 pf Reverse Transfer Capacitance C RSS 11 pf Equivalent Output Capacitance (Note 2) C OSS(EQ) V GS =V, V DS =V~64V 22 pf SWITCHING CHARACTERISTICS Total Gate Charge Q G 19 nc Gate-Source Charge Q GS V DD =64V, I D =3A, V GS =1V 3.2 nc Gate-Drain Charge Q DD 1.8 nc Turn-On Delay Time t D(ON) 17 ns Turn-On Rise Time t R V DD =4V, I D =3 A, 27 ns Turn-Off Delay Time t D(OFF) R G =4.7Ω, V GS =1V 36 ns Turn-Off Fall Time t F 4 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Source-Drain Current I SD 2.5 A Source-Drain Current (Pulsed) I SDM 1 A Reverse Recovery Current I RRM I SD =3A, di/dt=1a/μs, V DD =5V, T J =25 C 8.4 A Diode Forward Voltage(Note 1) V SD I SD =3A,V GS =V 1.6 V Body Diode Reverse Recovery Time t rr 384 ns Body Diode Reverse Recovery Charge Q RR 16 nc Note: 1. Pulse width = 3μs, Duty cycle 1.5% Note: 2. C OSS(EQ) is defined as constant equivalent capacitance giving the same charging time as C OSS when V DS increases from to 8% V DSS. UNISONIC TECHNOLOGIES CO., LTD 4 of 8
3N8 TEST CIRCUITS AND WAVEFORMS D.U.T. + V DS - I SD + - L V GS R G Same Type as D.U.T. Driver * dv/dt controlled by R G * I SD controlled by pulse period * D.U.T.-Device Under Test V DD Peak Diode Recovery dv/dt Test Circuit V GS (Driver) Gate Pulse Width D= Gate Pulse Period 1V I FM, Body Diode Forward Current I SD (DUT) di/dt I RM Body Diode Reverse Current V DS (DUT) Body Diode Recovery dv/dt V SD V DD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD 5 of 8
3N8 TEST CIRCUITS AND WAVEFORMS (Cont.) Switching Test Circuit Switching Waveforms Gate Charge Test Circuit Gate Charge Waveform Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms UNISONIC TECHNOLOGIES CO., LTD 6 of 8
3N8 TYPICAL CHARACTERISTICS 4 Drain Current vs. Source to Drain Voltage Drain-Source On-State Resistance Characteristics 12 Drain Current,ID (A) 3 2 1 Drain Current, ID (ma) 1 8 6 4 2 V GS =1V, I D =1.25A 2 4 6 8 Source to Drain Voltage,V SD (mv) 1 1 2 3 Drain to Source Voltage, V DS (V) 4 Drain Current,ID (µa) 3 25 2 15 1 5 Drain Current vs. Gate Threshold Voltage 1 2 3 4 Gate Threshold Voltage,V TH (V) Drain Current,ID (µa) Drain Current vs. Drain-Source Breakdown Voltage 4 35 3 25 2 15 1 5 2 4 6 8 1 Drain-Source Breakdown Voltage,BV DSS (V) Drain Current, ID (A) UNISONIC TECHNOLOGIES CO., LTD 7 of 8
3N8 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD 8 of 8