P-Channel 2 V (-S) MOSFET 6 Marking code: BQ TSOP-6 Single S 4 5 Top View PROUCT SUMMARY V S (V) -2 R S(on) max. ( ) at V GS = -4.5 V.24 R S(on) max. ( ) at V GS = -2.5 V.32 R S(on) max. ( ) at V GS = -.8 V.5 Q g typ. (nc) 9.8 I (A) a, d -8 Configuration Single ORERING INFORMATION Package Lead (Pb)-free and halogen-free 2 3 G FEATURES TrenchFET Gen III p-channel power MOSFET R S(on) rating at V GS = -.8 V % R g and UIS tested Material categorization: for definitions of compliance please see www.vishay.com/doc?9992 APPLICATIONS Battery management in mobile devices Battery switch Load switch PA switch TSOP-6 -T-GE3 G S P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T A = 25 C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT rain-source voltage V S -2 Gate-source voltage V GS ± 8 V -8 a Continuous drain current (T J = 5 C) T C = 7 C -8 I T A = 25 C -7.5 b, c T A = 7 C -6 b, c Pulsed drain current (t = μs) I M -32 A Continuous source-drain diode current -3 I S T A = 25 C -.67 b, c Single pulse avalanche current I AS - L =. mh Single pulse avalanche energy E AS 5 mj 3.6 Maximum power dissipation T C = 7 C 2.3 P T A = 25 C 2 b, c W T A = 7 C.3 b, c Operating junction and storage temperature range T J, T stg -55 to +5 C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT Maximum junction-to-ambient b t 5 s R thja 5 62.5 Maximum junction-to-case (drain) Steady state R thjc 28 35 C/W Notes a. Package limited. b. Surface mounted on " x " FR4 board. c. t = 5 s. d. Maximum under steady state conditions is C/W. S6-2645-Rev. A, 26-ec-6 ocument Number: 74735 ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
SPECIFICATIONS (T J = 25 C, unless otherwise noted) PARAMETER SYMBOL TEST CONITIONS MIN. TYP. MAX. UNIT Static rain-source breakdown voltage V S V GS = V, I = -25 μa -2 - - V V S temperature coefficient V S /T J - -2 - I = -25 μa V GS(th) temperature coefficient V GS(th) /T J - 2.5 - mv/ C Gate-source threshold voltage V GS(th) V S = V GS, I =-25 μa -.4 - - V Gate-source leakage I GSS V S = V, V GS = ± 8 V - - ± na V S = -2 V, V GS = V - - - Zero gate voltage drain current I SS V S = -2 V, V GS = V, T J = 7 C - - - μa On-state drain current a I (on) V S - V, V GS = -4.5 V -2 - - A rain-source on-state resistance a R S(on) V GS = -2.5 V, I = -6.4 A -.257.32 V GS = -4.5 V, I = -7.5 A -.2.24 V GS = -.8 V, I = -2 A -.378.5 Forward transconductance a g fs V S = - V, I = -7.5 A - 3 - S ynamic b Input capacitance C iss - 825 - Output capacitance C oss V S = - V, V GS = V, f = MHz - 2 - pf Reverse transfer capacitance C rss - 2 - V S = - V, V GS = -8 V, I = -7.5 A - 34.8 52.2 Total gate charge Q g - 9.8 3 nc Gate-source charge Q gs V S = - V, V GS = -4.5 V, I = -7.5 A - 2.6 - Gate-drain charge Q gd - 3 - Gate resistance R g f = MHz 2.2.6 2.2 Turn-on delay time t d(on) - 25 38 Rise time t r V = - V, R L =.67, I -6 A, - 3 45 Turn-off delay time t d(off) V GEN = -4.5 V, R g = - 95 45 Fall time t f - 4 6 Turn-on delay time t d(on) - 8 6 ns Rise time t r V = - V, R L =.67, I -6 A, - 2 3 Turn-off delay time t d(off) V GEN = -8 V, R g = - 5 73 Fall time t f - 4 6 rain-source Body iode Characteristics Continuous source-drain diode current I S - - -8 Pulse diode forward current I SM - - -32 A Body diode voltage V S I S = -6 A, V GS = V - -.8 -.2 V Body diode reverse recovery time t rr - 2 32 ns Body diode reverse recovery charge Q rr - 9 8 nc I F = -6 A, di/dt = A/μs, T J = 25 C Reverse recovery fall time t a - 9 - ns Reverse recovery rise time t b - 2 - Notes a. Pulse test; pulse width 3 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S6-2645-Rev. A, 26-ec-6 2 ocument Number: 74735 ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
I - rain Current (A) 32 24 6 8 V GS = 5 V thru 2.5 V V GS = 2 V V GS =.5 V.5.5 2 V S - rain-to-source Voltage (V) I - rain Current (A) 6 5 4 3 2 T C =-55 C 2 3 4 V GS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics R S(on) - On-Resistance (Ω).6.5.4.3.2. V GS =.8 V V GS = 2.5 V V GS = 4.5 V C - Capacitance (pf) 28 2 4 7 C oss C iss 8 6 24 32 I - rain Current (A) C rss 5 5 2 V S - rain-to-source Voltage (V) On-Resistance vs. rain Current and Gate Voltage Capacitance V GS - Gate-to-Source Voltage (V) 5 4 3 2 I = 7.5 A V S = 5 V V S = V V S = 6 V 7 4 2 28 Q g - Total Gate Charge (nc) R S(on) - On-Resistance (Normalized).5.3..9 V GS = 4.5 V, I = 7.5 A; V GS = 2.5 V, I = 6.4 A V GS =.8 V, 2 A.7-5 -25 25 5 75 25 5 T J - Junction Temperature ( C) Gate Charge On-Resistance vs. Junction Temperature S6-2645-Rev. A, 26-ec-6 3 ocument Number: 74735 ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
.6 I S - Source Current (A).. T J = 5 C T J = 25 C R S(on) - On-Resistance (Ω).5.4.3.2. T J = 5 C T J = 25 C..2.4.6.8..2 2 4 6 8 V S - Source-to-rain Voltage (V) V GS - Gate-to-Source Voltage (V) Source-rain iode Forward Voltage On-Resistance vs. Gate-to-Source Voltage.7 45.6 I = 25 μa 36 V GS(th) (V).5.4.3 Power (W) 27 8.2 9. -5-25 25 5 75 25 5 T J - Temperature ( C)... Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient I M limited I - rain Current (A) Limited by R S(on) () μs ms ms ms. s, s C T A = 25 C BVSS limited Single pulse.. V S - rain-to-source Voltage (V) () V GS > minimum V GS at which R S(on) is specified Safe Operating Area, Junction-to-Ambient S6-2645-Rev. A, 26-ec-6 4 ocument Number: 74735 ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
2 I - rain Current (A) 9 6 3 25 5 75 25 5 T C - Case Temperature ( C) Current erating a 4.5.5 3.6.2 Power (W) 2.7.8 Power (W).9.6.9.3 25 5 75 25 5 T C - Case Temperature ( C) 25 5 75 25 5 T A - Ambient Temperature ( C) Power, Junction-to-Case Power, Junction-to-Ambient Note a. The power dissipation P is based on T J max. = 5 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S6-2645-Rev. A, 26-ec-6 5 ocument Number: 74735 ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
uty Cycle =.5 Normalized Effective Transient Thermal Impedance.2. Notes:. P.5 M t.2 t 2 t. uty Cycle, = t 2 2. Per Unit Base = R thja = C/W 3. T Single Pulse JM -T A =P M Z (t) thja 4. Surface Mounted. -4-3 -2 Square Wave Pulse uration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - uty Cycle =.5 Normalized Effective Transient Thermal Impedance..2..5.2 Single Pulse. -4-3 -2 Square Wave Pulse uration (s) Normalized Thermal Transient Impedance, Junction-to-Case - maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?74735. S6-2645-Rev. A, 26-ec-6 6 ocument Number: 74735 ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
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