TOSHIBA BiCD Integrated Circuit Silicon Monolithic TB62214AFG

Similar documents
TBD62308AFAG TBD62308AFAG. TOSHIBA BiCD Integrated Circuit Silicon Monolithic. 4channel Low active high current sink type DMOS transistor array

TBD62387APG, TBD62387AFNG

TOSHIBA Bi-CD Integrated Circuit Silicon Monolithic TB6633FNG/AFNG

TD62083AFNG,TD62084AFNG

TBD62083APG, TBD62083AFG, TBD62083AFNG, TBD62083AFWG TBD62084APG, TBD62084AFG, TBD62084AFNG, TBD62084AFWG

TC75W57FU, TC75W57FK

TA75W01FU TA75W01FU. Dual Operational Amplifier. Features Pin Connection (Top View)

TC74AC04P, TC74AC04F, TC74AC04FT

TC75S56F, TC75S56FU, TC75S56FE

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1829

TC74VHC08F, TC74VHC08FT, TC74VHC08FK

TC4069UBP, TC4069UBF, TC4069UBFT

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ200

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK mw

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2009

TC7SB3157CFU TC7SB3157CFU. 1. Functional Description. 2. General. 3. Features. 4. Packaging and Pin Assignment. 5. Marking Rev.4.

TC7W04FU, TC7W04FK TC7W04FU/FK. 3 Inverters. Features. Marking TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

ULN2803APG,ULN2803AFWG,ULN2804APG,ULN2804AFWG

TC74HC00AP,TC74HC00AF,TC74HC00AFN

TC4001BP, TC4001BF, TC4001BFT

TA58M05F,TA58M06F,TA58M08F,TA58M09F TA58M10F,TA58M12F,TA58M15F

TC74HC14AP,TC74HC14AF

TC7W00FU, TC7W00FK TC7W00FU/FK. Dual 2-Input NAND Gate. Features. Marking. Pin Assignment (top view)

Ultra low quiescent current, Fast Load Transient 300 ma CMOS Low Drop-Out Regulator in ultra small package

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2240

TD62502PG,TD62502FG,TD62503PG,TD62503FG

TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7S14F, TC7S14FU

TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA8429H, TA8429HQ

TC7SBL66CFU, TC7SBL384CFU

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4213

TA78L005AP,TA78L006AP,TA78L007AP,TA78L075AP,TA78L008AP, TA78L009AP,TA78L010AP,TA78L012AP,TA78L132AP, TA78L015AP,TA78L018AP,TA78L020AP,TA78L024AP

TCK106AF, TCK107AF, TCK108AF

TC75S55F, TC75S55FU, TC75S55FE

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK302

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK211. Characteristics Symbol Test Condition Min Typ. Max Unit

Toshiba Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD1036F

TC4011BP,TC4011BF,TC4011BFN,TC4011BFT

TC7MBL3245AFT, TC7MBL3245AFK

TC4093BP, TC4093BF TC4093BP/BF. TC4093B Quad 2-Input NAND Schmitt Triggers. Pin Assignment. Logic Diagram

RN4987 RN4987. Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Equivalent Circuit and Bias Resister Values

TC7S04FU. Inverter. Features. Absolute Maximum Ratings (Ta = 25 C) TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

TC4584BP, TC4584BF TC4584BP/BF. TC4584B Hex Schmitt Trigger. Pin Assignment. Logic Diagram. Input/Output Voltage Characteristic

TC74VHCT74AF, TC74VHCT74AFT

LDO Regulators Glossary

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L 2 -π-mos V) 2SK2963

HN1B01F HN1B01F. Audio-Frequency General-Purpose Amplifier Applications Q1: Q2: Marking. Q1 Absolute Maximum Ratings (Ta = 25 C)

TD62308APG,TD62308AFG

3A, 8 mω Ultra Low On resistance Load Switch IC with Reverse Current Blocking and Thermal Shutdown function

TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J322

TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TAR5S15U ~ TAR5S50U

TC7SB66CFU, TC7SB67CFU

TB62269FTG Usage considerations

TC74VHCT540AF, TC74VHCT540AFT, TC74VHCT540AFK TC74VHCT541AF, TC74VHCT541AFT, TC74VHCT541AFK

TB6612FNG Usage considerations

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5086. Characteristics Symbol Test Condition Min Typ. Max Unit

(Note 1), (Note 2) (Note 1) (Note 1) (Silicon limit) (T c = 25 ) (t = 1 ms) (t = 10 s) (t = 10 s) (Note 3) (Note 4) (Note 5)

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5548A

HN1B04FU HN1B04FU. Audio Frequency General Purpose Amplifier Applications. Marking. Q1 Absolute Maximum Ratings (Ta = 25 C)

TC74VCX08FT, TC74VCX08FK

SSM3J118TU SSM3J118TU. High-Speed Switching Applications. Absolute Maximum Ratings (Ta = 25 C) Electrical Characteristics (Ta = 25 C)

Bipolar Transistors. Bipolar Transistors Application Note. Description

TC74VHC540F, TC74VHC540FT, TC74VHC540FK TC74VHC541F, TC74VHC541FT, TC74VHC541FK

TA78L05F,TA78L06F,TA78L07F,TA78L08F,TA78L09F,TA78L10F, TA78L12F,TA78L15F,TA78L18F,TA78L20F,TA78L24F

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1110MFV,RN1111MFV

SSM3K35CTC SSM3K35CTC. 1. Applications. 2. Features. 3. Packaging and Pin Assignment Rev.3.0. Silicon N-Channel MOS

SSM6J507NU SSM6J507NU. 1. Applications. 2. Features. 3. Packaging and Pin Assignment Rev Toshiba Corporation

TA78M05F,TA78M06F,TA78M08F,TA78M09F,TA78M10F TA78M12F,TA78M15F,TA78M18F,TA78M20F,TA78M24F

TOSHIBA Field Effect Transistor Silicon N-Channel Dual Gate MOS Type 3SK292

TC7WH00FU, TC7WH00FK

TC74VHC367F,TC74VHC367FT,TC74VHC367FK TC74VHC368F,TC74VHC368FT,TC74VHC368FK

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3303. TOSHIBA 2-7J1A temperature/current/voltage and the significant change in

TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2097

SSM3K339R SSM3K339R. 1. Applications. 2. Features. 3. Packaging and Pin Assignment Rev.1.0. Silicon N-Channel MOS

TOSHIBA Original CMOS 16-Bit Microcontroller. TLCS-900/H Series TMP95C061BFG TMP95C061BDFG. Semiconductor Company

TOSHIBA Field Effect Transistor Silicon N-Channel Dual Gate MOS Type 3SK294

RN2101MFV, RN2102MFV, RN2103MFV RN2104MFV, RN2105MFV, RN2106MFV

TCK104G, TCK105G. Load Switch IC with Current Limit function TCK104G,TCK105G. Feature

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L 2 π MOSV) 2SK2615

TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2065

(Note 1,2) (Note 1,3) (Note 1) (Silicon limit) (t = 1 ms) (T c = 25 ) (Note 4)

TPW1R005PL TPW1R005PL. 1. Applications. 2. Features. 3. Packaging and Internal Circuit Rev Toshiba Corporation

TC74LCX08F, TC74LCX08FT, TC74LCX08FK

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012

TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K35MFV. DC I D 180 ma Pulse I DP 360

TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TCR5SB15 ~ TCR5SB ma CMOS Low-Dropout Regulators (Point Regulators)

TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1943

TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TAR5SB15 ~ TAR5SB50

74LCX04FT 74LCX04FT. 1. Functional Description. 2. General. 3. Features. 4. Packaging Rev Toshiba Corporation

TLP206A TLP206A. Measurement Instrument Data Acquisition Programmable Control. Pin Configuration (top view) Internal Circuit

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (L 2 π MOSV) 2SK2201

SSM3J356R SSM3J356R. 1. Applications. 2. Features. 3. Packaging and Pin Assignment Rev.3.0. Silicon P-Channel MOS (U-MOS )

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSV) 2SK2992

SSM3K357R SSM3K357R. 1. Applications. 2. Features. 3. Packaging and Pin Assignment Rev.2.0. Silicon N-Channel MOS.

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K17FU

TC7USB40FT TC7USB40FT. 1. Functional Description. 2. General. 3. Features. 4. Packaging and Pin Assignment Rev.2.0. Dual SPDT USB Switch

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC3405

TD62064APG, TD62064AFG

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSIII) 2SK2607

TOSHIBA Fast Recovery Diode Silicon Diffused Type CMF01

TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TCR5SB15~TCR5SB ma CMOS Low-Dropout Regulators (Point Regulators)

Transcription:

TOSHIBA BiCD Integrated Circuit Silicon Monolithic BiCD Constant-Current Two-Phase Bipolar Stepping Motor Driver IC The is a two-phase bipolar stepping motor driver using a PWM chopper controlled by clock input. Fabricated with the BiCD process, the is rated at 40 V/2.0 A. The on-chip voltage regulator allows control of a stepping motor with a single VM power supply. Features Bipolar stepping motor driver PWM constant-current drive Clock input control Allows two-phase, 1-2-phase and W1-2-phase excitations. BiCD process: Uses DMOS FETs as output power transistors. High voltage and current: 40 V/2.0 A (absolute maximum ratings) Thermal shutdown (TSD), overcurrent shutdown (ISD), and power-on-resets (PORs) Packages: HSOP28-P-0450-0.80 Weight: 0.79 g (typ.) HSOP28-P-0450-0.80 Do not design your products or systems based on the information on this document. Please contact your Toshiba sales representative for updated information before designing your products. 1

Block Diagram Bch Pre-driver VREF Comparator Logic TSD/ISD/VRS Detect VREG Ach Pre-driver Oscillator Functional blocks/circuits/constants in the block chart etc. may be omitted or simplified for explanatory purposes. 2

3 Pin Assignment OSCM VREF_A 1 CW/CCW OUT_A RESET RS_A OUT_A CLK D_MODE_1 MO_OUT D_MODE_2 2 3 4 5 6 7 8 9 10 11 14 12 13 21 15 16 17 18 19 20 22 23 24 25 26 27 28 ENABLE FIN(GND) GND GND VREF_B VCC VM FIN(GND) RS_B OUT_B GND GND OUT_B

Pin Function Pin No. Pin Name Function 1 CW/CCW Motor rotation: forward/reverse 2 MO_OUT Electric angle monitor 3 D_MODE_1 Excitation mode control 4 D_MODE_2 Excitation mode control 5 CLK An electrical angle leads on the rising edge of the clock input. A motor rotation count depends on the input frequency. 6 ENABLE A-/B-channel output enable 7 RESET Electric angle reset 8 RS_A The sink current sensing of A-phase motor coil 9 No-connect 10 OUT_A A-phase positive driver output 11 No-connect 12 GND Motor power ground 13 OUT_A A-phase negative driver output 14 GND Motor power ground 15 GND Motor power ground 16 OUT_B B-phase negative driver output 17 GND Motor power ground 18 No-connect 19 OUT_B B-phase positive driver output 20 No-connect 21 RS_B The sink current sensing of B-phase motor coil 22 VM Power supply 23 VCC Smoothing filter for logic power supply 24 No-connect 25 No-connect 26 VREF_B Tunes the current level for B-phase motor drive. 27 VREF_A Tunes the current level for A-phase motor drive. 28 OSCM Oscillator pin for PWM chopper 4

CLK Function CLK Input Rise Fall Function The electrical angle leads by one on the rising edge. Remains at the same position. ENABLE Function ENABLE Input H L Function Output transistors are enabled (normal operation mode). Output transistors are disabled (high impedance state). CW/CCW Function CW/CCW Input Function H L Forward (CW) Reverse (CCW) Excitation Mode Select Function D_MODE_1 D_MODE_2 Function L L OSC_M, output transistors are disabled (in Standby mode) L H Two-phase excitation H L 1-2-phase excitation H H W1-2-phase excitation RESET Function RESET Input L H Normal operation mode The electrical angle is reset. Function Excitation Mode A-phase Current B-phase Current 2 Phase 100% 100% 1 2 Phase 100% 100% W1-2 Phase 71% 71% 5

Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Motor power supply V M 40 V Motor output voltage V OUT 40 V Motor output current I OUT 2.0 A Digital input voltage V IN -0.5 to 6.0 V Vref standard voltage V ref 5.0 V MO output voltage V MO 6.0 V MO output sink current I MO 30.0 ma Power dissipation P D 1.15 W Operating temperature T opr 20 to 85 C Storage temperature T stg 55 to 150 C Junction temperature T j (MAX) 150 C Operating Ranges (Ta=0 to 85 C) Characteristics Symbol Min Typ. Max Unit Motor power supply V M 10.0 24.0 38.0 V Motor output current I OUT 1.4 2.0 A Digital input voltage V IN (H) 2.0 5.5 V V IN (L) -0.4 1.0 V MO output voltage V MO 3.3 5.5 V Clock input frequency f CLK 100 khz Chopper frequency f chop 40.0 100.0 150 khz V ref reference voltage V ref GND 3.6 V Voltage across the current-sensing resistor pins V RS 0.0 ±1.0 ±1.5 V 6

Electrical Characteristics 1 (Ta = 25 C, VM = 24 V, unless otherwise specified) Characteristics Symbol Test Circuit Test Condition Min Typ. Max Unit Input hysteresis voltage VIN (HIS) DC Digital input pins 100 200 300 mv Digital input current MO output voltage Supply current High Low I IN (H) DC V IN = 5 V at the digital input pins under test I IN (L) DC V IN = 0 V at the digital input pins under test 35 50 75 μa 1 μa High V OH (MO) I OH = -24 ma when the output is High 2.4 V Low V OL (MO) I OL = 24 ma when the output is Low 0.5 V I M1 DC Outputs open, In standby mode 2 3 ma I M2 DC Outputs open, ENABLE = Low 3.5 5 ma I M3 DC Outputs open (two-phase excitation) 5 7 ma Output leakage current High-side I OH DC V RS = VM = 40 V, V OUT = 0 V 1 μa Low-side I OL DC V RS = VM = V OUT = 40 V 1 μa Channel-to-channel differential I OUT1 DC Channel-to-channel error 5 0 5 % Output current error relative to the predetermined value I OUT2 DC I OUT = 1 A 5 0 5 % R S pin current I RS DC V RS = VM = 24 V 0 10 μa Drain-source ON-resistance of the output transistors (upper and lower sum) R ON (D-S) DC I OUT = 2.0 A, T j = 25 C 1.0 1.5 Ω 7

Package Dimensions 8

Notes on Contents Block Diagrams Some of the functional blocks, circuits, or constants in the block diagram may be omitted or simplified for explanatory purposes. IC Usage Considerations Notes on handling of ICs (1) The absolute maximum ratings of a semiconductor device are a set of ratings that must not be exceeded, even for a moment. Do not exceed any of these ratings. Exceeding the rating(s) may cause the device breakdown, damage or deterioration, and may result injury by explosion or combustion. (2) Use an appropriate power supply fuse to ensure that a large current does not continuously flow in case of over current and/or IC failure. The IC will fully break down when used under conditions that exceed its absolute maximum ratings, when the wiring is routed improperly or when an abnormal pulse noise occurs from the wiring or load, causing a large current to continuously flow and the breakdown can lead smoke or ignition. To minimize the effects of the flow of a large current in case of breakdown, appropriate settings, such as fuse capacity, fusing time and insertion circuit location, are required. (3) If your design includes an inductive load such as a motor coil, incorporate a protection circuit into the design to prevent device malfunction or breakdown caused by the current resulting from the inrush current at power ON or the negative current resulting from the back electromotive force at power OFF. IC breakdown may cause injury, smoke or ignition. Use a stable power supply with ICs with built-in protection functions. If the power supply is unstable, the protection function may not operate, causing IC breakdown. IC breakdown may cause injury, smoke or ignition. (4) Do not insert devices incorrectly or in the wrong orientation. Make sure that the positive and negative terminals of power supplies are connected properly. Otherwise, the current or power consumption may exceed the absolute maximum rating, and exceeding the rating(s) may cause breakdown, damage or deterioration of the device, and may result in injury by explosion or combustion. In addition, do not use any device that has had current applied to it while inserted incorrectly or in the wrong orientation even once. (5) Carefully select power amp, regulator, or other external components (such as inputs and negative feedback capacitors) and load components (such as speakers). If there is a large amount of leakage current such as input or negative feedback capacitors, the IC output DC voltage will increase. If this output voltage is connected to a speaker with low input withstand voltage, overcurrent or IC failure can cause smoke or ignition. (The over current can cause smoke or ignition from the IC itself.) In particular, please pay attention when using a Bridge Tied Load (BTL) connection type IC that inputs output DC voltage to a speaker directly. 9

Points to remember on handling of ICs Overcurrent Protection Circuit Overcurrent protection circuits (referred to as current limiter circuits) do not necessarily protect ICs under all circumstances. If the overcurrent protection circuits operate against the overcurrent, clear the overcurrent status immediately. Depending on the method of use and usage conditions, exceeding absolute maximum ratings may cause the overcurrent protection circuit to operate improperly or IC breakdown may occur before operation. In addition, depending on the method of use and usage conditions, if overcurrent continues to flow for a long time after operation, the IC may generate heat resulting in breakdown. Thermal Shutdown Circuit Thermal shutdown circuits do not necessarily protect ICs under all circumstances. If the thermal shutdown circuits operate against the over-temperature, clear the heat generation status immediately. Depending on the method of use and usage conditions, exceeding absolute maximum ratings may cause the thermal shutdown circuit to operate improperly or IC breakdown to occur before operation. Heat Radiation Design When using an IC with large current flow such as power amp, regulator or driver, design the device so that heat is appropriately radiated, in order not to exceed the specified junction temperature (TJ) at any time or under any condition. These ICs generate heat even during normal use. An inadequate IC heat radiation design can lead to decrease in IC life, deterioration of IC characteristics or IC breakdown. In addition, when designing the device, take into consideration the effect of IC heat radiation with peripheral components. Back-EMF When a motor rotates in the reverse direction, stops or slows abruptly, current flows back to the motor s power supply owing to the effect of back-emf. If the current sink capability of the power supply is small, the device s motor power supply and output pins might be exposed to conditions beyond the absolute maximum ratings. To avoid this problem, take the effect of back-emf into consideration in system design. 10

RESTRICTIONS ON PRODUCT USE Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS. PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUTION OR FAILURE OF WHICH MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT ("UNINTENDED USE"). Except for specific applications as expressly stated in this document, Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. IF YOU USE PRODUCT FOR UNINTENDED USE, TOSHIBA ASSUMES NO LIABILITY FOR PRODUCT. For details, please contact your TOSHIBA sales representative. Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part. Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY WHATSOEVER, ILUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR IIDENTAL DAMAGES OR LOSS, ILUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO SALE, USE OF PRODUCT, OR INFORMATION, ILUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT. Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products (mass destruction weapons). Product and related software and technology may be controlled under the applicable export laws and regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING AS A RESULT OF NOOMPLIAE WITH APPLICABLE LAWS AND REGULATIONS. 11