FFPF6B5DS FFPF6B5DS Features High voltage and high reliability High speed switching Modulation diode / Damper diode Low conduction loss Modulation diode / Damper diode TO-22F Applications (Modulation + Damper) diode designed for horizontal deflection circuits in C-TVs & monitors 2 3 Damper Modulation DAMPER + MODULATION DIODE Absolute Maximum Ratings (Modulation) =25 C unless otherwise noted Symbol Parameter Value Units V RRM Peak Repetitive Reverse Voltage 6 V I F(AV) Average Rectified Forward Current @ = C 2 A I FSM Non-repetitive Peak Surge Current 2 A 6Hz Single Half-Sine Wave, T STG Operating Junction and Storage Temperature - 65 to +5 C Absolute Maximum Ratings (Damper) =25 C unless otherwise noted Symbol Parameter Value Units V RRM Peak Repetitive Reverse Voltage 5 V I F(AV) Average Rectified Forward Current @ = C 6 A I FSM Non-repetitive Peak Surge Current 6 A 6Hz Single Half-Sine Wave, T STG Operating Junction and Storage Temperature - 65 to +5 C Thermal Characteristics Symbol Parameter Value Units R θjc Maximum Thermal Resistance, Junction to Case 3.3 C/W 2 Fairchild Semiconductor Corporation Rev. A, March 2
Electrical Characteristics*(Modulation) =25 C unless otherwise noted Symbol Parameter Min. Typ. Max. Units V FM Maximum Instantaneous Forward Voltage V I RM t rr I rr Q rr I F = 2A I F = 2A = 25 C = C Maximum Instantaneous Reverse Current @ rated V R = 25 C = C Maximum Reverse Recovery Time Maximum Reverse Recovery Current Maximum Reverse Recovery Charge (I F =2A, di/dt = 2A/µs) 2.2 2. 9 8 36 µa ns A nc FFPF6B5DS * Pulse Test: Pulse Width=3µs, Duty Cycle=2% Electrical Characteristics*(Damper) =25 C unless otherwise noted Symbol Parameter Min Typ Max Units V FM Maximum Instantaneous Forward Voltage V I RM I F = 6A I F = 6A = 25 C = C Maximum Instantaneous Reverse Current @ rated V R = 25 C = C t rr Maximum Reverse Recovery Time 7 ns (I F =.A, di/dt = 5A/µs) t fr Maximum Forward Recovery Time 35 ns (I F =6.5A, di/dt = 5A/µs) V FRM Maximum Forward Recovery Voltage 7 V.6.4 7 6 µa * Pulse Test: Pulse Width=3µs, Duty Cycle=2% 2 Fairchild Semiconductor Corporation Rev. A, March 2
Typical Characteristics Forward Current, I F 4 = o C Forward Current, I F 5 = 25 o C FFPF6B5DS...5..5 2. 2.5 3. Forward Voltage, V F...4.8.2.6 2. Forward Voltage, V F Figure. Typical Forward Characteristics (Modulation Diode) Figure 2. Typical Forward Characteristics (Damper Diode) Reverse Current, I R [ua].. = o C Reverse Current, I R [µa].. = 25 o C = o C. 2 3 4 5 6. 3 6 9 2 5 Figure 3. Typical Reverse Current vs. Reverse Voltage (Modulation Diode) Figure 4. Typical Reverse Current vs. Reverse Voltage (Damper Diode) 2 Typical Capacitance at V = 78 pf 2 Typical Capacitance at V = pf Capacitance, Cj [pf] 5 5 Capacitance, Cj [pf] 8 6 4 2.. Figure 5. Typical Junction Capacitance (Modulation Diode) Figure 6. Typical Junction Capacitance (Damper Diode) 2 Fairchild Semiconductor Corporation Rev. A, March 2
Typical Characteristics Reverse Recovery Time, t rr [ns] 9 8 7 6 5 I F = 2A Reverse Recovery Time, t rr [ns] 4 3 2 di/dt = 5A/µs di/dt = A/µs FFPF6B5DS 4 5 di/dt [A/us] 2 3 4 5 6 7 8 9 Forward Current, I F Figure 7. Typical Reverse Recovery Time vs. di/dt (Modulation Diode) Figure 8. Typical Reverse Recovery Time vs. di/dt (Damper Diode) Reverse Recovery Current, I rr 6 4 2 8 6 4 2 I F = 2A 5 di/dt [A/us] Average Forward Current, I F(AV) 9 8 7 6 5 4 3 2 8 2 4 6 DC Case Temperature, [ o C] Figure 9. Typical Reverse Recovery Current vs. di/dt (Modulation Diode) Figure. Forward Current Derating Curve (Damper Diode) Average Forward Current, I F(AV) 3 25 2 5 5 DC 6 8 2 4 6 Case Temperature, [ o C] Figure. Forward Current Derating Curve (Modulation Diode) 2 Fairchild Semiconductor Corporation Rev. A, March 2
Package Dimensions TO-22F FFPF6B5DS 3.3 ±..6 ±.2 ø3.8 ±. 2.54 ±.2 (7.) (.7) 5.8 ±.2 6.68 ±.2 (.x45 ) 5.87 ±.2 9.75 ±.3 MAX.47.8 ±. (3 ).35 ±. #.5 +..5 2.76 ±.2 2.54TYP [2.54 ±.2] 2.54TYP [2.54 ±.2] 9.4 ±.2 4.7 ±.2 Dimensions in Millimeters 2 Fairchild Semiconductor Corporation Rev. A, March 2
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