FLAT-BASE TYPE SULATED PACKAGE FEATURE a) Adopting Full-Gate CSTBT TM chip. b) The over-temperature protection which detects the chip surface temperature of CSTBT TM is adopted. c) Error output signal is available from each protection upper and lower arm of IPM. d) Outputting an error signal corresponding to the abnormal state (error mode identification) UL Recognized under UL1557, File No. E323585 This product is compliant with the Restriction of the Use of Certain Hazardous Substances in Electrical and Electronic Equipment (RoHS) directive 11/65/EU. APPLICATION General purpose inverter, servo drives and other motor controls PACKAGE OUTLES Dimensions in mm Tolerance otherwise specified Division of Tolerance Dimension.5 to 3 ±.2 over 3 to 6 ±.3 over 6 to 3 ±.5 over 3 to 1 ±.8 over 1 to 4 ±1.2 TERMAL CODE 1.B, 2.P, 3.N, 4.U, 5., 6.W, 7.UPC, 8.UFO, 9.UP,.UP1, 11.PC, 12.FO, 13.P, 14.P1, 15.WPC, 16.WFO, 17.WP, 18.WP1, 19.NC,.N1, 21.BR, 22.UN, 23.N, 24.WN, 25.FO APPLICATION NE <CMH-1167-A> 1 Publication date : Nov, 17
HIGH POWER SWITCHG USE SULATED TYPE TERNAL FUNCTIONS BLOCK DIAGRAM Br W P WP1 P P1 UP NC WN N1 N UN WPC W PC UPC UP1 U OUT OUT OUT OUT OUT OUT OUT B N W U P MAXIMUM RATGS (Tvj = 25 C, unless otherwise noted) ERTER PART Symbol Parameter Conditions Ratings Unit CES Collector-Emitter oltage D =15, C =15 65 I C T C =25 C 5 Collector Current I CRM Pulse A P tot Total Power Dissipation T C =25 C 24 W I E Emitter Current T C =25 C 5 I ERM (Free-wheeling Diode rward current) Pulse A Tvj Junction Temperature - ~ +15 C *: Tc measurement point is just under the chip. BRAKE PART Symbol Parameter Conditions Ratings Unit CES Collector-Emitter oltage D =15, C =15 65 I C T C =25 C 5 Collector Current I CRM Pulse A P tot Total Power Dissipation T C =25 C 24 W R(DC) Diode Rated Reverse DC oltage T C =25 C 65 I F Diode rward Current T C =25 C 5 A T j Junction Temperature - ~ +15 C *: Tc measurement point is just under the chip. CONTROL PART Symbol Parameter Conditions Ratings Unit D Supply oltage Applied between: UP1 - UPC, P1 - PC, WP1 - WPC, N1 - NC C Input oltage Applied between: U P - UPC, P - PC, W P - WPC, U N, N, W N, Br - NC FO Fault Output Supply oltage Applied between: U FO - UPC, FO - PC, W FO - WPC, - NC I FO Fault Output Current nk current at U FO, FO, W FO, terminals ma APPLICATION NE <CMH-1167-A> 2
HIGH POWER SWITCHG USE SULATED TYPE TAL SYSTEM Symbol Parameter Conditions Ratings Unit CC(PR) Supply oltage Protected by SC D =13.5 ~16.5, Inverter Part, Tvj=+125 C start 4 T stg Storage Temperature - -4 ~ +125 C T C Operating Case Temperature - - ~ +125 C isol Isolation oltage 6Hz, nusoidal, Charged part to Base plate, AC 1min, RMS 25 *: Tc measurement point is just under the chip. THERMAL RESISTANCE Limits Symbol Parameter Conditions Min. Typ. Max. R th(j-c)q Inverter, Junction to case, IGBT, per 1 element (Note1) - -.52 R th(j-c)d Inverter, Junction to case, FWD, per 1 element (Note1) - -.88 Thermal Resistance R th(j-c)q Brake, Junction to case, IGBT, per 1 element (Note1) - -.52 R th(j-c)d Brake, Junction to case, FWD, per 1 element (Note1) - -.88 R th(c-s) Contact Thermal Resistance Case to heat sink, per 1 module, Thermal grease applied (Note.1, 2) Note1. If you use this value, R th(s-a) should be measured just under the chips. Note2. Typical value is measured by using thermally conductive grease of λ=.9w/(m K), D (C-S) =5 μm. CHIP LOCATION (Top view) Dimension in mm, torelance: ±1mm Unit K/W - 19.1 - K/kW Tr** : IGBT Di** : FWD APPLICATION NE <CMH-1167-A> 3
HIGH POWER SWITCHG USE SULATED TYPE ELECTRICAL (Tvj= 25 C, unless otherwise noted) ERTER PART Symbol Parameter Conditions CEs at EC t on Collector-Emitter Saturation oltage Emitter-Collector oltage D =15, I C =5 A Tvj=25 C C =, Pulsed, (Fig.1) Tvj=125 C D =15, I E =5 A, Tvj=25 C C = 15, pulsed, (Fig.2) Tvj=125 C Limits Min. Typ. Max. Terminal - - 1.7 Chip - 1.25 - Terminal - - 1.95 Chip - 1.33 - Terminal - - 1.9 Chip - 1.4 - Terminal - - 2. Chip - 1.45 - D =15, C = 15,.3.6 1.2 t rr CC =3, I C =5A, -.2.65 t c(on) Switching Time Tvj=125 C, -.17.75 t off Inductive Load - 1. 2.3 t c(off) (Fig.3, 4) -.13.4 I CES Collector-Emitter Cut-off Current CE = CES, D =15, C =15 (Fig.5) Tvj=25 C - - 1 Tvj=125 C - - Unit μs ma BRAKE PART Symbol Parameter Conditions D =15, I C =5 A Tvj=25 C CEs at Collector-Emitter Saturation oltage C =, Pulsed, (Fig.1) Tvj=125 C Tvj=25 C FM Diode rward oltage I F =5A Tvj=125 C I CES Collector-Emitter Cut-off Current CE = CES, D =15, C =15 (Fig.5) Limits Min. Typ. Max. Terminal - - 1.7 Chip - 1.25 - Terminal - - 1.95 Chip - 1.33 - Terminal - - 1.9 Chip - 1.4 - Terminal - - 2. Chip - 1.45 - Tvj=25 C - - 1 Tvj=125 C - - Unit ma APPLICATION NE <CMH-1167-A> 4
HIGH POWER SWITCHG USE SULATED TYPE ELECTRICAL (Tvj = 25 C, unless otherwise noted) CONTROL PART I D Symbol Parameter Conditions Circuit Current Limits Min. Typ. Max. D =15, C =15 P1 - PC - 4 6 N1 - NC - 16 24 D =15, C = 15, CC =4 P1 - PC - 12 I C =A, Tvj=125 C, f C khz N1 - NC - 39 46 th(on) Input ON Threshold oltage Applied between: 1.2 1.5 1.8 th(off) Input OFF Threshold oltage U P - UPC, P - PC, W P - WPC, U N, N, W N, Br- NC 1.7 2. 2.3 SC Short Circuit Trip Level - Tvj 125 C, D =15 (Fig.3, 6) Inverter - - Brake - - t d(sc) Short Circuit Current Delay Time D =15, Tvj=125 C (Fig.3, 6) - 2. - μs Trip level 15 - - Over Temperature Protection Detect temperature of IGBT chip surface (hys) Hysteresis - - U t Supply Circuit Trip level 11. 12. 12.7 - Tvj 125 C U r Under-oltage Protection Reset level - 12.5 - I FO(H) - -.1 Fault Output Current - I FO(L) - 15 t FO Fault Output Pulse Width D =15 (Note3) - 8. - U - 4. - SC - 2. - Note3. Fault output is given only when the internal SC, & U protections schemes of either upper or lower arm device operate to protect it. MECHANICAL RATGS AND Symbol Parameter Conditions Limits Min. Typ. Max. M s Mounting Torque Mounting part screw : M4 1.5 1.7 2. M t Mounting Torque Main terminal part screw : M4 1.5 1.7 2. m mass - - 175 - g RECOMMENDED CONDITIONS FOR USE Symbol Parameter Conditions Recommended value Unit CC Supply oltage Applied across P-N terminals 4 D Control Supply oltage Applied between : UP1 - UPC, P1 - PC, WP1 - WPC, N1 - NC (Note4) C(ON) Input ON oltage Applied between :.8 C(OFF) Input OFF oltage U P - UPC, P - PC, W P - WPC, U N, N, W N, Br- NC 9. Unit ma A C ma ms Unit N m 15.±1.5 f PWM PWM Input Frequency Using Application Circuit of Fig. 8 khz t dead Arm Shoot-through Blocking Time r IPM s each input signals (Fig.7) 2. μs This product is compliant with the Restriction of the Use of Certain Hazardous Substances in Electrical and Electronic Equipment (RoHS) directive 11/65/EU. Note4. With ripple satisfying the following conditions: dv/dt swing ±5 /μs, ariation 2 peak to peak APPLICATION NE <CMH-1167-A> 5
HIGH POWER SWITCHG USE SULATED TYPE PRECAUTIONS FOR TESTG 1. Before applying any control supply voltage (D), the input terminals should be pulled up by resistors, etc. to their corresponding supply voltage and each input signal should be kept off state. After this, the specified ON and OFF level setting for each input signal should be done. 2. When performing SC tests, the turn-off surge voltage spike at the corresponding protection operation should not be allowed to rise above CES rating of the device. (These test should not be done by using a curve tracer or its equivalent.) P,(U,,W,B) P,(U,,W,B) D(all) cin Ic D(all) cin IE U,,W,B(N) Fig.1 CEsat Test U,,W,B(N) Fig.2 EC Test P P D(all) D(all) cin U,,W CC cin CC D(all) D(all) U,, W cin N cin N I C I C Fig.3 Switching time and SC test circuit Fig.4 Switching time test waveform D(all) cin P,(U,,W,B) A CE pulse U,,W,B(N) Fig.5 I CES Test Fig.6 SC test waveform Fig. 7 Dead time measurement point example APPLICATION NE <CMH-1167-A> 6
HIGH POWER SWITCHG USE SULATED TYPE D IF.1µ k µ UP1 UFO UP UPC OUT P U + - D P1 FO P PC OUT M D WP1 WFO WP OUT WPC W k µ OUT IF UN.1µ N k µ OUT IF.1µ N k µ N1 OUT D IF.1µ WN B IF.1µ k µ NC N1 Br OUT 5 1k : Interface which is the same as the U-phase Fig. 8 Application Example Circuit NES FOR STABLE AND SAFE OPERATION ; Design the PCB pattern to minimize wiring length between opto-coupler and IPM s input terminal, and also to minimize the stray capacity between the input and output wirings of opto-coupler. Connect low impedance capacitor between the and terminal of each fast switching opto-coupler. Fast switching opto-couplers: tplh, tphl.8μs, Use High CMR type. Slow switching opto-coupler: CTR > % (*can be applied to Brake part input signal, in this case, resistor should be selected properly). Use 4 isolated control power supplies (D). Also, care should be taken to minimize the instantaneous voltage charge of the power supply. Make inductance of DC bus line as small as possible, and minimize surge voltage using snubber capacitor between P and N terminal. APPLICATION NE <CMH-1167-A> 7
HIGH POWER SWITCHG USE SULATED TYPE PERFORMANCE CURES Inverter part COLLECTOR-EMITTER SATURATION OLTAGE (S. Ic) 6 6 FREE WHEELG DIODE FORWARD COLLECTOR CURRENT IC (A) 5 4 3 D=15, Chip EMITTER CURRENT IE (A) 5 4 3 D=15, Chip..2.4.6.8 1. 1.2 1.4 COLLECTOR-EMITTER SATURATION OLTAGE CEsat ()..2.4.6.8 1. 1.2 1.4 1.6 EMITTER - COLLECTOR OLTAGE EC (). SWITCHG TIME (t on, t off ) 1 SWITCHG TIME (t c(on), t c(off) ) =3 D=15 tc(off) SWITCHG TIME (μs) 1. Inductive Load toff ton SWITCHG TIME (μs).1 tc(on) =3 D=15 Inductive Load.1 3 4 5 6 COLLECTOR CURRENT I C (A).1 3 4 5 6 COLLECTOR CURRENT I C (A) SWITCHG ENERGY (mj/pulse) SWITCHG ENERGY 2. 1.8 1.6 1.4 1.2 1..8.6.4.2. =3 D=15 Inductive Load COLLECTOR CURRENT I C (A) REERSE RECOERY ENERGY (mj/pulse) 3 4 5 6. Eon Eoff FREE WHEELG DIODE REERSE RECOERY ENERGY 2. 1.8 1.6 1.4 1.2 1..8.6.4.2 =3 D=15 Inductive Load 3 4 5 6 EMITTER CURRENT I E (A) APPLICATION NE <CMH-1167-A> 8
HIGH POWER SWITCHG USE SULATED TYPE REERSE RECOERY CURRENT (A) REERSE RECOERY TIME (ns) FREE WHEELG DIODE REERSE RECOERY Inductive Load 1 3 4 5 6 EMITTER CURRENT I E (A) U TRIP LEEL S. Tvj 18 =3 D=15 trr Irr ID (ma) 5 45 4 35 3 25 15 5 I D S. f C (TYPICAL, MAXIMUM) 5 15 25 f c (khz) *inverter and brake part SC TRIP LEEL S. Tvj 2. 1.8 =4 D=15, TYPICAL MAXIMUM D=15 N side P side Ut / Ur () 16 14 12 8 6 4 2 Ur Ut SC (SC of is normalized 1) 1.6 1.4 1.2 1..8.6.4.2-5 5 15 Tvj ( C) *inverter and brake part. -5 5 15 Tvj ( C) *inverter and brake part TRANSIENT THERMAL IMPEDANCE NORMARIZED TRANSIENT THERMAL IMPEDANCE Zth(j-c) 1.1.1 ngle Pulse IGBT Part; Per unit base: Rth(j-c)Q=.52K /W FWD Part; Per unit base: Rth(j-c)D=.88K /W.1.1.1.1.1.1 1 TIME (s) APPLICATION NE <CMH-1167-A> 9
HIGH POWER SWITCHG USE SULATED TYPE PERFORMANCE CURES Brake part COLLECTOR-EMITTER SATURATION OLTAGE (S. Ic) 6 6 FREE WHEELG DIODE FORWARD COLLECTOR CURRENT IC (A) 5 4 3 D=15, Chip EMITTER CURRENT IE (A) 5 4 3 D=15, Chip..2.4.6.8 1. 1.2 1.4 COLLECTOR-EMITTER SATURATION OLTAGE CEsat ()..2.4.6.8 1. 1.2 1.4 1.6 EMITTER - COLLECTOR OLTAGE EC () TRANSIENT THERMAL IMPEDANCE NORMARIZED TRANSIENT THERMAL IMPEDANCE Zth(j-c) 1.1.1 ngle Pulse IGBT Part; Per unit base: Rth(j-c)Q=.52K /W FWD Part; Per unit base: Rth(j-c)D=.88K /W.1.1.1.1.1.1 1 TIME (s) APPLICATION NE <CMH-1167-A>
HIGH POWER SWITCHG USE SULATED TYPE Keep safety first in your circuit designs! This product is designed for industrial application purpose. The performance, the quality and support level of the product is guaranteed by Customer's Std. Spec.. Mitsubishi Electric Corporation puts its reasonable effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them by the reliability lifetime such as Power Cycle, Thermal Cycle or others, or to be used under special circumstances(e.g. high humidity, dusty, salty, highlands, environment with lots of organic matter / corrosive gas / explosive gas, or situation which terminal of semiconductor products is received strong mechanical stress). In the customer's research and development, please evaluate it not only with a single semiconductor product but also in the entire system, and judge whether it's applicable. Furthermore, trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits (e.g. appropriate fuse or circuit breaker between a power supply and semiconductor products), (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials These materials are intended as a reference to assist our customers in the selection of the Mitsubishi semiconductor product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party. Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, or circuit application examples contained in these materials. All information contained in these materials, including product data, diagrams and charts represents information on products at the time of publication of these materials, and are subject to change by Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Mitsubishi Electric Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Mitsubishi Electric Corporation by various means, including the Mitsubishi Semiconductor home page (www.mitsubishielectric.com/semiconductors/). When using any or all of the information contained in these materials, including product data, diagrams, and charts, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Mitsubishi Electric Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Therefore, this product should not be used in such applications. Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. In the case of new requirement is available, this material will be revised upon consultation. The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or in part these materials. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for further details on these materials or the products contained therein. Generally the listed company name and the brand name are the trademarks or registered trademarks of the respective companies. Note: The characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. 18 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERED. APPLICATION NE <CMH-1167-A> 11