Data Sheet. ASDL-4560 High Performance Infrared Emitter (875nm) ChipLED. Description. Features. Applications. Ordering Information

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ASDL-456 High Performance Infrared Emitter (875nm) ChipLED Data Sheet Description ASDL-456 Infrared emitter is a 85 ChipLED SMT package that is designed for high radiant intensity, fast switching and low forward voltage applications. It is optimized for efficiency at emission wavelength of 875nm and encapsulated with a flat lens for wide viewing angle applications. Applications High-Speed Machine Automated System Remote Control Smoke Detector Medical Applications Non-Contact Position Sensing Optical Encoders Features 875nm wavelength Industry Standard Footprint: 85 ChipLED SMT Package Top Emitting High Brightness Low Forward Voltage High Pulse Rate High Speed Wide Viewing Angle Lead Free and ROHS Compliant Tape & Reel for automation placement Ordering Information Part Number Packaging Shipping Option ASDL-465-C22 Tape & Reel 12Kpcs

Package Outline.5 1.25 MOLDING BODY (LENS) P.C BOARD POLARITY LED DICE + SOLDERING TERMINAL 2. CATHODE MARKING 1.4.5 Ref.9mm (typ) - 1.1.5 Notes: 1. All dimensions are in Millimetres 2. Dimension tolerance is +/-.1mm unless otherwise specified. 3. Ref.9mm refers to typical reference value Tape and Reel Dimension All Dimensions are in Millimeters (Inches) 2

Absolute Maximum Ratings at 25 C Parameter Symbol Min. Max Unit Reference Peak Forward Current I FPK 325 ma T p =5ns T w = 1ns Duty Cycle=2% Continuous Forward Current I FDC 1 ma Figure 5 Power Dissipation P DISS 13 mw Reverse Voltage V r 4 V I r =1uA Operating Temperature T O -4 85 C LED Junction Temperature T J 11 C Lead Soldering Temperature 26 for 5 sec C Electrical Characteristics at 25 C Parameter Symbol Min. Typ. Max. Unit Condition Forward Voltage V F 1.4 1.45 1.75 2. V V I F =2mA I F =5mA Reverse Voltage V r 4 V I R =1uA Thermal Resistance Junction to Ambient 38 C/W Diode Capacitance C O 5 pf V r =V, f=1mhz Optical Characteristics at 25 C Parameter Symbol Min. Typ. Max. Unit Condition Radiant On-Axis Intensity I E 2. 2.8 mw/sr I F = 5mA Viewing Angle 2θ 1/2 15 deg Peak wavelength λ PK 875 nm I F = 5mA Spectral Width Δλ 45 nm I F = 5mA Optical Rise Time t r 15 ns I FPK =5mA Duty Factor=2% Pulse Width=1ns Optical Fall Time t f 1 ns I FPK =5mA Duty Factor=2% Pulse Width=1ns

Typical Electrical / Optical Characteristics Curve (T A = 25 C Unless Otherwise Stated) 1.2.12 RELATIVE RADIANT INTENSITY 1..8.6.4.2 7 8 9 1 PEAK WAVELENGTH - nm IF FORWARD CURRENT - A.1.8.6.4.2..5 1 1.5 2 V F FORWARD VOLTAGE - V Figure 1. Peak Wavelength Vs Relative Radiant Intensity Figure 2. Forward Current Vs Forward Voltage 6 1 RADIANT INTENSITY - mw/sr 5 4 3 2 1 Ie - RELATIVE RADIANT INTENSITY.8.6.4.2 2 4 6 8 1 12 FORWARD CURRENT - ma Figure 3. Forward Current Vs Radiant Intensity -.8 -.6 -.4 -.2..2.4.6.8 Figure 4. Angular Displacement Vs Relative Radiant Intensity I FDC MAX - MAXIMUM DC CURRENT PER SEGMENT - ma 15 1 95 9 85 8 75 7 65 6 55 5 45 4 35 3 25 2 15 1 5 2 4 6 8 1 T A - AMBIENT TEMPERATURE - o C Figure 5. Forward Current versus Ambient Temperature derated based on Tj 11 C and thermal resistance at 38 C/W 4

Recommended Reflow Profile T - TEMPERATURE ( C) 255 23 217 2 18 15 12 8 R1 R2 R3 MAX 26C 6 sec to 9 sec Above 217 C R4 R5 25 P1 HEAT UP 5 1 15 2 25 3 P2 SOLDER PASTE DRY P3 SOLDER P4 COOL DOWN t-time (SECONDS) REFLOW Process Zone Symbol DT Maximum DT/Dtime or Duration Heat Up P1, R1 25 C to 15 C 3 C/s Solder Paste Dry P2, R2 15 C to 2 C 1s to 18s Solder Reflow P3, R3 P3, R4 2 C to 26 C 26 C to 2 C 3 C/s -6 C/s Cool Down P4, R5 2 C to 25 C -6 C/s Time maintained above liquidus point, 217 C > 217 C 6s to 9s Peak Temperature 26 C - Time within 5 C of actual Peak Temperature - 2s to 4s Time 25 C to Peak Temperature 25 C to 26 C 8mins The reflow profile is a straight-line representation of a nominal temperature profile for a convective reflow solder process. The temperature profile is divided into four process zones, each with different DT/Dtime temperature change rates or duration. The DT/Dtime rates or duration are detailed in the above table. The temperatures are measured at the component to printed circuit board connections. In process zone P1, the PC board and component pins are heated to a temperature of 15 C to activate the flux in the solder paste. The temperature ramp up rate, R1, is limited to 3 C per second to allow for even heating of both the PC board and component pins. Process zone P2 should be of sufficient time duration (1 to 18 seconds) to dry the solder paste. The temperature is raised to a level just below the liquidus point of the solder. Process zone P3 is the solder reflow zone. In zone P3, the temperature is quickly raised above the liquidus point of solder to 26 C (5 F) for optimum results. The dwell time above the liquidus point of solder should be between 6 and 9 seconds. This is to assure proper coalescing of the solder paste into liquid solder and the formation of good solder connections. Beyond the recommended dwell time the intermetallic growth within the solder connections becomes excessive, resulting in the formation of weak and unreliable connections. The temperature is then rapidly reduced to a point below the solidus temperature of the solder to allow the solder within the connections to freeze solid. Process zone P4 is the cool down after solder freeze. The cool down rate, R5, from the liquidus point of the solder to 25 C (77 F) should not exceed 6 C per second maximum. This limitation is necessary to allow the PC board and component pins to change dimensions evenly, putting minimal stresses on the component. It is recommended to perform reflow soldering no more than twice. 5

Recommended Land Pattern All Dimensions are in Millimeters (Inches) For company and product information, please go to our web site: WWW.liteon.com or http://optodatabook.liteon.com/databook/databook.aspx Data subject to change. Copyright 27 Lite-On Technology Corporation. All rights reserved.