Power-off Isolation,,. V to 5.5 V, SPDT Analog Switch (: Multiplexer) DESCRIPTION The is a high performance single-pole, double-throw (SPDT) analog switch designed for. V to 5.5 V operation with a single power rail. Fabricated with high density CMOS technology, the device achieves low on resistance of and switch off capacitance of 7 pf at a 5 V power supply and low power consumption, and fast switching speeds. The features break before make switching performance. It can handle both analog and digital signals and permits signals with amplitudes of up to to be transmitted in either direction. A power-off protection circuit is built into the switch to prevent an abnormal current path through the signal pins during the power-off condition. The part can withstand greater than 7 kv ESD (human body model). The is available in the compact SC-7-L package. FEATURES Low switch on-resistance ( ) +. V to +5.5 V single supply operation Available Isolation in powered-off mode Available Low voltage logic control Control logic inputs can go over Low parasitic capacitance Break before make switching Latch-up performance exceeds ma per JESD 7 High ESD rating - 7 V human body model (JS-) - V charge device model (JS-) Material categorization: for definitions of compliance please see www.vishay.com/doc?999 Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details APPLICATIONS Battery powered devices Consumer and computing Instrumentation Medical equipment Control and automation FUNCTIONAL BLOCK DIAGRAM AND P CONFIGURATION SC-7 NO (Source ) 5 GND 3 4 NC (Source ) Top view Device marking H TRUTH TABLE LOGIC NC NO On Off Off On Notes Logic. V Logic.4 V ORDERG FORMATION TEMP. RANGE PACKAGE PART NUMBER -4 C to +5 C SC-7- DL-T-GE3 S-4-Rev. C, 3-Apr- Document Number: 7 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
ABSOLUTE MAXIMUM RATGS PARAMETER LIMIT UNIT,, NC, NO, reference to GND -.3 to V Continuous current (any terminal) ± 5 Peak current (pulsed at ms, % duty cycle) ± ma Storage temperature -5 to +5 C Power dissipation (packages) a -pin SC-7 b 5 mw ESD / HBM JS- 7 ESD / CDM JS- V Latch up Per JESD7 with.5 x voltage clamp ma Notes a. All leads welded or soldered to PC board b. Derate 3. mw/ C above 7 C Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS ( = 5 V) TEST CONDITIONS UNLESS OTHERWISE SPECIFIED = 5 V, ± % V =. V or.4 V e LIMITS -4 C to +5 C PARAMETER SYMBOL TEMP. a UNIT M. b TYP. c MAX. b Analog Switch Analog signal range d V NO, V NC V Full - V Drain-source on-resistance d R DS(on) = 4.5 V, V = 3 V, I NO, I NC = ma Room - Full - 5 R DS(on) flatness d R DS(on) = 5 V, V flatness =.5 V, 3.5 V, I NO, I NC = ma Room -.4 - R DS(on) match d R DS(on) = 4.5 V, V = 3 V, I NO, I NC = ma Room -.4 I NO(off), Room -.5 -.5 Switch-off leakage current f I NC(off) = 5.5 V, Full -4-4 V NO, V NC = V / 4.5 V, V = 4.5 V / V Room - - I (off) na Full -4-4 Channel-on leakage current f = 5.5 V, Room - - I (on) V NO, V NC = V = V / 4.5 V Full -4-4 Power-down leakage I PD = V, V = 5 V, NO/NC open, V = GND Full - - 5 = V, V NO, V NC = 5 V, open, V = GND Full - - 5 Digital Control Input high voltage V H Full.4 - - Input low voltage V L Full - -. V Input capacitance d C Full - - pf Input current I L or I H V = V or Full - - μa Dynamic Characteristics Turn-on time d t ON Room - 3 Full - - 4 Turn-off time d t OFF V NO or V NC = 3 V, R L = 3, C L = 35 pf Room - 5 ns Full - - 3 Break-before-make time d t BBM Room - - Charge injection d Q J C L = nf, V GEN = V, V NO, V NC = V, R GEN = Room - - pc Off-isolation d OIRR Room - -7 - R L = 5, C L = 5 pf, f = MHz Crosstalk d X TALK Room - -77 - db NO, NC off capacitance d C NO(off) Room - 7 - C NC(off) V = V or, f = MHz Room - 7 - pf Channel-on capacitance d C ON Room - 3 - Power Supply Power supply current d I+ V = V or Full -.4 μa S-4-Rev. C, 3-Apr- Document Number: 7 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9 μa
SPECIFICATIONS ( = 3 V) PARAMETER SYMBOL TEST CONDITIONS UNLESS OTHERWISE SPECIFIED = 3 V, ± % V =.4 V or V e TEMP. a LIMITS -4 C to +5 C M. b TYP. c MAX. b UNIT Analog Switch Analog signal range d V NO, V NC V Full - V Drain-source on-resistance d R DS(on) =.7 V, V =.5 V, I NO, I NC = ma Room - 3 95 Full - 5 5 R DS(on) flatness d R DS(on) = 3 V, V flatness = V to, I NO, I NC = ma Room -.4 - R DS(on) match d R DS(on) =.7 V, V =.5 V, I NO, I NC = ma Room -.3 I NO(off), Room -4-4 pa I NC(off) = 3.3 V, Switch-off leakage current f Full -4-4 na V NO, V NC = V / 3 V, V = 3 V / V Room - - pa I (off) Full - - na Channel-on leakage current f = 3.3 V, Room - - pa I (on) V NO, V NC = V = V / 3 V Full - - na Digital Control Input high voltage V H Full - - Input low voltage V L Full - -.4 V Input capacitance d C Full - - pf Input current I L or I H V = V or Full - - μa Dynamic Characteristics Turn-on time d t ON Room - 3 45 Full - - 55 Turn-off time d t OFF V NO or V NC = V, R L = 3, C L = 35 pf Room - 9 35 ns Full - - 4 Break-before-make time d t BBM Room - - Charge injection d Q J C L = nf, V GEN = V, V NO, V NC = V, R GEN = Room -.9 - pc Off-isolation d OIRR Room - -7 - R L = 5, C L = 5 pf, f = MHz Crosstalk d X TALK Room - -77 - db NO, NC off capacitance d C NO(off) Room - 7 - C NC(off) V = V or, f = MHz Room - 7 - pf Channel-on capacitance d C ON Room - 4 - Power Supply Power supply current d I+ V = V or Full -. μa S-4-Rev. C, 3-Apr- 3 Document Number: 7 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
SPECIFICATIONS ( =.5 V) PARAMETER SYMBOL TEST CONDITIONS UNLESS OTHERWISE SPECIFIED =.5 V, ± % V =.4 V or V e TEMP. a LIMITS -4 C to +5 C M. b TYP. c MAX. b UNIT Analog Switch Analog signal range d V NO, V NC V Full - V Drain-source on-resistance d R DS(on) =. V, V = V, I NO, I NC = ma Room - 3 Full d - 4 R DS(on) flatness d R DS(on) =.5 V, V flatness = V to, I NO, I NC = ma Room -.7 - R DS(on) match d R DS(on) =. V, V =. V, I NO, I NC = ma Room -. I NO(off), Room - - pa I NC(off) =.7 V, Switch-off leakage current f V NO, V NC =.5 V /.5 V, V =.5 V /.5 V Room - - pa I (off) Channel-on leakage current f =.7 V, Room - - pa I (on) V NO, V NC = V =.5 V /.5 V Digital Control Input high voltage V H Full - - Input low voltage V L Full - -.4 V Input capacitance d C Full - - pf Input current I L or I H V = V or Full - - μa Dynamic Characteristics Turn-on time d t ON Room - 5 Full d - - Turn-off time d t OFF V NO or V NC =.5 V, R L = 3, C L = 35 pf Room - 35 ns Full - - 45 Break-before-make time d t BBM Room d - - Charge injection d Q J C L = nf, V GEN = V, V NO, V NC = V, R GEN = Room -.9 - pc Off-isolation d OIRR Room - -7 - R L = 5, C L = 5 pf, f = MHz Crosstalk d X TALK Room - -77 - db NO, NC off capacitance d C NO(off) Room - 7 - C NC(off) V = V or, f = MHz Room - 7 - pf Channel-on capacitance d C ON Room - 4 - Power Supply Power supply current d I+ V = V or Full - - μa S-4-Rev. C, 3-Apr- 4 Document Number: 7 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
SPECIFICATIONS ( = V) PARAMETER SYMBOL TEST CONDITIONS UNLESS OTHERWISE SPECIFIED = V, ± % V =.4 V or. V e TEMP. a LIMITS -4 C to +5 C M. b TYP. c MAX. b UNIT Analog Switch Analog signal range d V NO, V NC V Full - V Drain-source on-resistance d R DS(on) =. V, V = V, I NO, I NC = ma Room - 37 Full d - 3 R DS(on) flatness d R DS(on) = V, V flatness = V to, I NO, I NC = ma Room - 3 - R DS(on) match d R DS(on) =. V, V = V, I NO, I NC = ma Room -.4 I NO(off), Room - - pa I NC(off) =. V, Switch-off leakage current f V NO, V NC =.5 V /.5 V, V =.5 V /.5 V Room - - pa I (off) Channel-on leakage current f =. V, Room - - pa I (on) V NO, V NC = V =.5 V /.5 V Digital Control Input high voltage V H Full. - - Input low voltage V L Full - -.4 V Input capacitance d C Full - - pf Input current I L or I H V = V or Full - - μa Dynamic Characteristics Turn-on time d t ON Room - 5 Full d - - Turn-off time d t OFF V NO or V NC =.5 V, R L = 3, C L = 35 pf Room - 3 35 ns Full d - - 45 Break-before-make time d t BBM Room - - Charge injection d Q J C L = nf, V GEN = V, V NO, V NC = V, R GEN = Room -. - pc Off-isolation d OIRR Room - -7 - R L = 5, C L = 5 pf, f = MHz Crosstalk d X TALK Room - -77 - db NO, NC off capacitance d C NO(off) Room - 7 - C NC(off) V = V or, f = MHz Room - 7 - pf Channel-on capacitance d C ON Room - 4 - Power Supply Power supply current d I+ V = V or Full - - μa Notes a. Room = 5 C, full = as determined by the operating suffix b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet c. Typical values are for design aid only, not guaranteed nor subject to production testing d. Guarantee by design, nor subjected to production test e. V = input voltage to perform proper function f. Guaranteed by 5 V leakage testing, not production tested S-4-Rev. C, 3-Apr- 5 Document Number: 7 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
TYPICAL CHARACTERISTICS (5 C, unless otherwise noted) R ON - On-Resistance (Ω) 5 45 4 35 3 5 5 5 = +. V I S = - ma = +.7 V = +3. V = +3.3 V = +4.5 V = +5.5 V 3 4 5 V - Analog Voltage (V) R ON - On-Resistance (Ω) 4 4-4 C +5 C +5 C = +. V I S = ma.5.5.5 V - Analog Voltage (V) R DS(on) vs. V and Supply Voltage R DS(on) vs. Analog Voltage and Temperature +5 C 4 4 +5 C R ON - On-Resistance (Ω) 4 = +4.5 V I S = ma +5 C -4 C 3 4 5 V - Analog Voltage (V) R ON - On-Resistance (Ω) 3 3 = +. V I S = ma -4 C +5 C.5.5 V - Analog Voltage (V) R DS(on) vs. Analog Voltage and Temperature R DS(on) vs. Analog Voltage and Temperature +5 C 5 I NC/NO(OFF),V = V, V NC/NO = 4.5 V +5 C I (OFF),V = 4.5 V, V NC/NO = V R ON - On-Resistance (Ω) 4 = +.7 V I S = ma -4 C.5.5.5 3 V - Analog Voltage (V) Leakage Current (pa) -5 - -5 I (ON),V = 4.5 V I NC/NO(OFF),V = 4.5 V, V NC/NO = V I (OFF),V = V, V NC/NO = 4.5 V = +5.5 V I (ON),V = V - -4-4 R DS(on) vs. Analog Voltage and Temperature Leakage Current vs. Temperature S-4-Rev. C, 3-Apr- Document Number: 7 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
TYPICAL CHARACTERISTICS (5 C, unless otherwise noted) Leakage Current (pa) 5-5 - -5 I NC/NO(OFF),V = V, V NC/NO = 3 V I (OFF),V = 3 V, V NC/NO = V I (ON),V = 3 V I NC/NO(OFF),V = 3 V, V NC/NO = V I (OFF),V = V, V NC/NO = 3 V = +3.3 V I (ON),V = V - -4-4 Loss, OIRR, X TALK (db) Loss - - -3-4 -5 X TALK - OIRR -7 - -9 - = +5 V - K M M M G Frequency (Hz) Leakage Current vs. Temperature Insertion Loss, Off-Isolation Crosstalk vs. Frequency I+ - Supply Current (na)...4....4. = +5.5 V V = or GND -4-4 Supply Current vs. Temperature I+ - Supply Current (μa).... = +5 V. K K M M Input Switching Frequency (Hz) Supply Current vs. Input Switching Frequency 7. I+ - Supply Current (μa). 5. 4. = +5 V V =. V t ON, t OFF - Switching Time (ns) 4 4 = +3 V, t ON = +3 V, t OFF = +5 V, t ON = +5 V, t OFF 3. -4-4 -5-3 - 3 5 7 9 Supply Current vs. Temperature Switching Time vs. Temperature S-4-Rev. C, 3-Apr- 7 Document Number: 7 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
TYPICAL CHARACTERISTICS (5 C, unless otherwise noted) t ON, t OFF - Switching Time (ns) 3 4 = +. V, t ON = +.5 V, t ON 4 = +. V, t OFF = +.5 V, t OFF 4-5 -3-3 5 7 9 I+ - Supply Current (μa)...... = 3. V =.5 V = 5 V = V.5..5..5 3. 3.5 4. 4.5 5. V (V) Switching Time vs. Temperature Supply Current vs. Enable Input Voltage V - Switching Threshold (V).4.....4.....4. -4 C to +5 C V H V L.5.5 3.5 4.5 5.5 - Supply Voltage (V) Q J - Charge Injection (pc) -5. -. -5. -. = V =.5 V = 3 V = 5 V 3 4 5 V NC/NO - Analog Voltage (V) Switching Threshold vs. Supply Voltage Charge Injection vs. Analog Voltage I (PD) Power Down Leakage Current (na) 7 5 4 3 = V = GND 5 C 5 C 4 V (V) -4 C I (PD) Power Down Leakage Current (na).5.5.5 = V = GND, V = +3 V -4-4 Power Down Leakage Current vs. V Power Down Leakage Current vs. Temperature S-4-Rev. C, 3-Apr- Document Number: 7 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
TEST CIRCUITS Switch NO or NC Switch Output V OUT Logic Input 3 V V 5 % t r < ns t f < ns Logic Input GND R L 3 C L 35 pf Switch Output V t ON.9 x V OUT t OFF C L (includes fixture and stray capacitance) R V OUT = V L R L + R ON Logic = switch on Logic input waveforms inverted for switches that have the opposite logic sense. Fig. - Switching Time Logic Input 3 V t r < 5 ns t f < 5 ns V NO NO V O V V NC NC R L 3 Ω C L 35 pf V NC = V NO V O 9 % GND Switch Output V t D t D C L (includes fixture and stray capacitance) Fig. - Break-Before-Make Interval V gen + R gen 3 V NC or NO GND V OUT C L = nf V OUT On ΔV OUT Off On Q = ΔV OUT x C L depends on switch configuration: input polarity determined by sense of switch. Fig. 3 - Charge Injection S-4-Rev. C, 3-Apr- 9 Document Number: 7 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
TEST CIRCUITS nf V,.4 V NC or NO R L GND V NC/NO Off Isolation = log V Analyzer Fig. 4 - Off-Isolation nf V,.4 V NC or NO Meter HP49A Impedance Analyzer or Equivalent GND f = MHz Fig. 5 - Channel Off / On Capacitance maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?7. S-4-Rev. C, 3-Apr- Document Number: 7 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
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