Release Nexperia Assembly and Test Malaysia Facility as 2nd Source for PowerMOS

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Transcription:

epcn Print: Final Product Change Notification 201703004F01 https://extranet.nexperia.com/pcn/private/print?pcnid=37221434 Page 1 of 2 3/16/2017 Final Product Change Notification Issue Date: 17-Mar-2017 Effective Date: 30-Jun-2017 Dear pcn system2, 201703004F01 Here's your personalized quality information concerning products Future Electronics purchased from Nexperia. For detailed information we invite you to view this notification online Change Category Wafer Fab Process Wafer Fab Materials Wafer Fab Location Assembly Process Assembly Materials Assembly Location Product Marking Design Location Mechanical ification Process Errata Packing/Shipping/Labeling Equipment Electrical spec./ coverage Release Nexperia Assembly and Malaysia Facility as 2nd Source for PowerMOS Details of this Change Multi Site Assembly and of LFPAK56 (SOT669) will be supported by Nexperia Assembly and in Malaysia (ATSN) in addition to Nexperia Assembly and in the Philippines (ATCB). Why do we Implement this Change To meet Customer requirements for second sourcing of production as a business contingency. From implementation date Nexperia will have increased capacity provided by two manufacturing locations for our LFPAK56 outline, ATCB Philippines and ATSN Malaysia. Identification of Affected Products Top side marking Four Marking codes will exist following this introduction identifying the four sources of DMAN/VIS wafers and ATCB/ATSN Assembly and (Prt, PEt, Prm and PEm). Product Availability Sample Information Samples are available upon request Production Planned first shipment 30-Jun-2017 Impact no impact to the product's functionality anticipated.

epcn Print: Final Product Change Notification 201703004F01 https://extranet.nexperia.com/pcn/private/print?pcnid=37221434 Page 2 of 2 3/16/2017 None. No impact on form, fit or function. Same process flow, materials and final test. Data Sheet Revision No impact to existing datasheet Disposition of Old Products N/A Related Notifications Notification Issue Date Effective Date Title 201702001F01U01 01-Mar-2017 14-Jun-2017 Release of 2nd source assembly for BUK9Y12-40E Additional information Self qualification: view online Timing and Logistics Your acknowledgement of this change, conform JEDEC J-STD-046, is expected till 16-Apr-2017. Remarks The qualification of Power MOS devices in ATSN has been successfully carried out using PH6030DLV as the Structural Group Leader. This type has been in production since Q1 2016. However, the varying devices utilise different top clips, Nexperia plan to perform further qualifications to expand reliability knowledge and parametric performance data. (As attached Qual Plan). Contact and Support For all inquiries regarding the epcn tool application or access issues, please contact Nexperia "Global Quality Support Team". For all Quality Notification content inquiries, please contact your local Nexperia Sales Support team. For specific questions on this notice or the products affected please contact our specialist directly: e-mail address powermos.pcn@nexperia.com At Nexperia B.V we are constantly striving to improve our product and processes to ensure they reach the highest possible Quality Standards. Nexperia Quality Management Team. Manchester: powermos.pcn@nexperia.com Nijmegen: logic.helpdesk@nexperia.com Hamburg: DiscrQA.Helpdesk.GA-Products@nexperia.com About Nexperia B.V We at Nexperia are the efficiency semiconductor company. We deliver over 70 billion products a year and as such service thousands of global customers, both directly and through our extensive network of channel partners. We are at the heart of billions of electronic devices in the Automotive, Mobile, Industrial, Consumer, Computing, and Communication Infrastructure segments. Nexperia B.V. Jonkerbosplein 52 6534 AB Nijmegen, The Netherlands 2017 Nexperia. All rights reserved.

Release Nexperia Assembly and Malaysia Facility as 2nd Source for PowerMOS Revision: 16 March 2017 Document Information Information Author Supplier Document Number Content Richard Aspin Nexperia 201703004F01 Revision History Revision Date 14-Mar-2017 Description New document Contact Information For more information, please contact: powermos.pcn@nexperia.com

Release Nexperia Assembly and Malaysia Facility as 2nd Source for PowerMOS Table of Contents 1. Purpose... 3 2. Associated Notifications... 3 3. Part Material Composition... 3 4. Manufacturing... 3 5. Manufacturing Site Identification... 3 6. Functional Performance... 4 6.1 Parametric Verification Nexperia Malaysia... 5 6.2 Parametric Varication -Nexperia Cabuayo... 6 7. Qualification Plan and Results... 7 8. Legal Disclaimer... 10 Product Change Notification Revision: 16 March 2017 Page 2 of 10

Release Nexperia Assembly and Malaysia Facility as 2nd Source for PowerMOS 1. Purpose To meet customer requirements for second sourcing of production as a business contingency, Nexperia will have increased capacity provided by two manufacturing locations for our LFPAK56 outline, Nexperia, Cabuyao, Philippines (ATCB) and Nexperia, Seremban, Malaysia (ATSN). 2. Associated Notifications PCN Ref Issue Date Description 201702001F01 01-Mar-2017 Release of 2nd source assembly for BUK9Y12-40E (Automotive) 3. Part Material Composition This additional assembly and test source has no effect on the RoHS compliance / RHF indicator, this remains unchanged, all devices will be compliant EU Directive 2011/65/EU (RoHS) containing exempted lead and Halogen/Antimony-Free. 4. Manufacturing Assembly and test will be carried out at either Nexperia, Cabuyao, Philippines (ATCB) or Nexperia, Seremban, Malaysia (ATSN). All manufacturing organisations are accredited to the appropriate quality management system with copies of site certification as well as certification changes is available from the Nexperia internet pages - http://www.nexperia.com/about/quality/quality-policy.html 5. Manufacturing Site Identification The device top side marking clearly shows both the diffusion and assembly locations using the product manufacturing code. The diagram below summarises the naming convention In addition to the device marking the reel box label does show the country of origin as notified in 201702003G Product Change Notification Revision: 16 March 2017 Page 3 of 10

Release Nexperia Assembly and Malaysia Facility as 2nd Source for PowerMOS 6. Functional Performance This change has no effect on the functional performance of the device, parametric verification results. The results overleaf for product type PH6030DLV assembled at Nexperia, Seremban Malaysia and Cabuyao, Philippines show no change of the performance. Product Change Notification Revision: 16 March 2017 Page 4 of 10

Release Nexperia Assembly and Malaysia Facility as 2nd Source for PowerMOS 6.1 Parametric Verification Nexperia Malaysia Supplier: NXP Semiconductors NXP Part Number: PH6030DLV Lot Identificatio n: Assembly Batch: Diffusion Batch: EE12345W-70 G2CT Date ed: 09/03/2016 Unit Conditions Temperature: Ambient ~25 C LSL USL Min Max Mean I GSSP na Vgs = 16V 100 2.29 2.39 2.32 2.37E-2 1375 Std. Dev. (L) (H) I GSSN na Vgs = 16V 100-1.16-1.03-1.10 2.77E-2 1217 V (BR)DS S V Id = 250uA 30.0 32.1 35.0 34.2 0.60 2.35 I DSS ua Vds = 24V 1.00 3.60E-3 6.40E-3 4.15E-3 6.19E-4 537 R DSon 1 mw Vgs = 10V Id = 15A 6.00 5.34 5.60 5.48 6.70E-2 2.57 R DSon 2 mw Vgs = 4.5V Id = 15A 8.35 7.08 8.06 7.34 0.18 1.90 V SD V Id = -10A 1.20 0.81 0.82 0.82 2.42E-3 52.9 V GS(th) V Vds = Vgs Id = 1mA 1.36 2.20 1.74 1.96 1.86 6.24E-2 2.67 1.82 Temperature: -55 C Unit Conditions LSL USL Min Max Mean Std. Dev. (L) (H) V (BR)DS S V Id = 250uA 27.0 29.7 32.6 31.8 0.59 2.71 V GS(th) V Vds = Vgs Id = 1mA 1.94 2.22 2.09 7.55E-2 Unit Conditions Temperature: 150 C LSL USL Min Max Mean I DSS ua Vds = 30V 500 3.40 6.30 4.57 0.70 236 Std. Dev. (L) (H) R DSon 1 mω Vgs = 10V Id = 15A 10.8 8.66 9.01 8.83 8.64E-2 7.60 V GS(th) V Vds = Vgs Id = 1mA 1.29 1.43 1.36 3.63E-2 Product Change Notification Revision: 16 March 2017 Page 5 of 10

Release Nexperia Assembly and Malaysia Facility as 2nd Source for PowerMOS 6.2 Parametric Varication -Nexperia Cabuayo Supplier: NXP Semiconductors NXP Part Number: PH6030DLV Lot Identificatio n: Assembly Batch: Diffusion Batch: Unknow n G2CU63.1 Date ed: 10/03/2016 Unit Conditions Temperature: Ambient ~25 C LSL USL Min Max Mean I GSSP na Vgs = 16V 100 2.24 2.33 2.30 2.08E-2 1564 Std. Dev. (L) (H) I GSSN na Vgs = 16V 100-1.34-1.09-1.13 5.30E-2 636 V (BR)DS S V Id = 250uA 30.0 32.2 33.1 32.5 0.23 3.67 I DSS ua Vds = 24V 1.00 5.20E-3 1.58E-2 8.94E-3 3.55E-3 93.0 R DSon 1 mw Vgs = 10V Id = 15A 6.00 5.02 5.42 5.23 0.10 2.52 R DSon 2 mw Vgs = 4.5V Id = 15A 8.35 6.65 7.83 7.03 0.28 1.55 V SD V Id = -10A 1.20 0.81 0.83 0.82 3.19E-3 39.8 V GS(th) V Vds = Vgs Id = 1mA 1.36 2.20 1.70 1.96 1.82 7.28E-2 2.11 1.73 Temperature: -55 C Unit Conditions LSL USL Min Max Mean Std. Dev. (L) (H) V (BR)DS S V Id = 250uA 27.0 30.0 30.6 30.2 0.19 5.67 V GS(th) V Vds = Vgs Id = 1mA 1.90 2.22 2.05 8.91E-2 Unit Conditions Temperature: 150 C LSL USL Min Max Mean I DSS ua Vds = 30V 500 5.90 10.8 7.86 1.35 121 Std. Dev. (L) (H) R DSon 1 mω Vgs = 10V Id = 15A 10.8 8.18 8.72 8.37 0.15 5.24 V GS(th) V Vds = Vgs Id = 1mA 1.25 1.43 1.33 4.17E-2 Product Change Notification Revision: 16 March 2017 Page 6 of 10

Release Nexperia Assembly and Malaysia Facility as 2nd Source for PowerMOS 7. Qualification Plan and Results Based on industry standards Nexperia have evaluated the proposed change and determined the reliability tests needed to demonstrate that form, fit, function, quality and reliability is continued. The reliability testing results already published are summarised below. Description Conditions Duration Site Vehicle Result fails / sample size Pre & Post Stress Electrical (TEST) Room temperature measurement pre & post stress tests N / A All All parts used for stress testing See result for stress tests below Precondition (PC) MSL 1 Pb free temperature profile JESD22-A113 N / A All All H3TRB, HAST, TC, UHST & IOL trials 0 fails High Humidity, Temperature & Reverse Bias (H3TRB) Bias = % rated Vds Ta = 85ºC, RH = 85% JESD22-A101 1000 hours ATCB PSMN4R0-30YLD PSMN6R0-30YLD PSMN1R4-30YLD Highly Accelerated Stress (HAST) Bias = % rated Vds Ta = 130ºC RH = 85%, JESD22-A101 96 hours ATCB PSMN1R4-30YLD ATSN PH6030DLV PH6030DLV 1000 hours ATSN PH6030DLV High Temperature Gate Bias (HTGB) Vgs = +16V Tamb. = 175 C JESD22-A108 1000 hours ATCB PSMN4R0-30YLD PSMN6R0-30YLD PSMN7R5-30YLD PSMN7R5-30YLD PSMN1R4-30YLD ATSN PH6030DLV 1000 hours ATSN PH6030DLV High Temperature Gate Bias (HTRB) Bias = % rated Vds Tamb. = 175 C JESD22-A108 1000 hours ATCB PSMN4R0-30YLD PSMN4R0-30YLD PSMN6R0-30YLD PSMN7R5-30YLD PSMN1R4-30YLD ATSN PH6030DLV Product Change Notification Revision: 16 March 2017 Page 7 of 10

Release Nexperia Assembly and Malaysia Facility as 2nd Source for PowerMOS Description Conditions Duration Site Vehicle Result fails / sample size Temperature Cycling (TC) Tamb. = -55 to 150ºC JESD22-A104 500 cycles ATCB PSMN4R0-30YLD PSMN6R0-30YLD PSMN7R5-30YLD PSMN7R5-30YLD PSMN1R4-30YLD ATSN PH6030DLV PH6030DV PH4030DLV Unbiased Highly Accelerated Stress (UHST) Ta = 130ºC, RH = 85%, JESD22-A118 96 hours ATCB PSMN4R0-30YLD PSMN6R0-30YLD PSMN7R5-30YLD PSMN1R4-30YLD ATSN PH6030DLV PH6030DLV Intermittent Operating Life (IOL) dtj = C 5000 cycles ATCB PSMN4R0-30YLD PSMN6R0-30YLD ATSN PH6030DLV PH6030DLV Resistance to Solder Heat (RSH) SSG JESD22-A111 N / A ATCB PSMN2R6-40YS 0/30 ATSN PH6030DLV 0/30 Clip Pull (CP) SSG Gate Clip N / A ATCB PSMN5R0-30YL 0/5 ATSN PH6030DLV 0/10 Product Change Notification Revision: 16 March 2017 Page 8 of 10

Release Nexperia Assembly and Malaysia Facility as 2nd Source for PowerMOS In addition to the already published qualification data Nexperia plan to perform further qualifications to expand reliability knowledge and parametric performance data. Full results will be available through 2017. Description High Humidity, Temperature & Reverse Bias (H3TRB) Highly Accelerated Stress (HAST) High Temperature Gate Bias (HTGB) High Temperature Gate Bias (HTRB) Temperature Cycling (TC) Unbiased Highly Accelerated Stress (UHST) Intermittent Operating Life (IOL) Conditions Bias = % rated Vds Ta = 85ºC, RH = 85% JESD22-A101 Bias = % rated Vds Ta = 130ºC RH = 85%, JESD22-A101 Vgs = +16V Tamb. = 175 C JESD22-A108 Bias = % rated Vds Tamb. = 175 C JESD22-A108 Tamb. = -55 to 150ºC JESD22-A104 Ta = 130ºC, RH = 85%, JESD22-A118 Duration Site Vehicle Sample Size 1000 hours ATSN PSMN069-100YS 96 hours ATSN 1000 hours ATSN 1000 hours ATSN 500 cycles ATSN 96 hours ATSN dtj = C 5000 cycles ATSN PSMN1R7-25YLD PSMN069-100YS PSMN8R5-60YS PSMN069-100YS PSMN5R0-30YL PSMN3R0-30YLD PSMN1R7-25YLD PSMN2R2-30YLS PSMN1R2-25YLC PSMN1R2-25YLD PSMN4R0-40YS PSMN013-60YL PSMN8R5-60YS PSMN013-60YL PSMN5R0-30YL PSMN3R0-30YLD PSMN1R7-25YLD PSMN1R2-25YLC PSMN1R2-25YLD PSMN4R0-40YS PSMN013-60YL PSMN8R5-60YS PSMN013-60YL PSMN5R0-30YL PSMN3R0-30YLD PSMN1R7-25YLD PSMN2R2-30YLS PSMN1R2-25YLC PSMN1R2-25YLD PSMN4R0-40YS PSMN013-60YL PSMN8R5-60YS PSMN013-60YL Product Change Notification Revision: 16 March 2017 Page 9 of 10

Release Nexperia Assembly and Malaysia Facility as 2nd Source for PowerMOS 8. Legal Disclaimer All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. All information herein is per Nexperia s best knowledge. This document does not provide for any representation or warranty expressed or implied by Nexperia. Product Change Notification Revision: 16 March 2017 Page 10 of 10

AFFECTED MPNS PSMN045-YS,115 PSMN8R5-60YS,115 PSMN020-100YS,115 PSMN2R2-25YLC,115 PSMN4R0-40YS,115 PSMN025-YLX PSMN6R0-30YL,115 PSMN026-YS,115 PSMN014-40YS,115 PSMN069-100YS,115 PSMN1R2-25YLC,115 PSMN5R0-30YL,115 PSMN017-60YS,115 PSMN2R2-30YLC,115 PSMN041-YLX PSMN2R0-30YLDX PSMN1R4-30YLDX X PSMN7R0-30YL,115 PSMN030-60YS,115 934064149115 934064402115 934064431115 934065199115 934063937115 934069902115 934063076115 934063933115 934064146115 934064536115 934065197115 934063075115 934064399115 934065191115 934067516115 934067964115 934068236115 934069896115 934063077115 934064398115 PSMN045-YS PSMN8R5-60YS PSMN020-100YS PSMN2R2-25YLC PSMN4R0-40YS PSMN025-YL

PSMN6R0-30YL PSMN026-YS PSMN014-40YS PSMN069-100YS PSMN1R2-25YLC PSMN5R0-30YL PSMN017-60YS PSMN2R2-30YLC PSMN041-YL PSMN2R0-30YLD PSMN1R4-30YLD PSMN7R0-30YL PSMN030-60YS

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