BB Product profile. 2. Pinning information. 3. Ordering information. VHF variable capacitance diode. 1.1 General description. 1.

Similar documents
UHF variable capacitance diode. Voltage Controlled Oscillators (VCO) Electronic tuning in UHF television tuners

IMPORTANT NOTICE. use

VHF variable capacitance diode

IMPORTANT NOTICE. use

BB Product profile. 2. Pinning information. 3. Ordering information. FM variable capacitance double diode. 1.1 General description

Planar PIN diode in a SOD523 ultra small SMD plastic package.

Ultrafast, epitaxial rectifier diode in a SOD59 (TO-220AC) plastic package. High frequency switched-mode power supplies

Ultrafast, epitaxial rectifier diode in a SOD113 (TO-220F) plastic package.

Dual rugged ultrafast rectifier diode, 20 A, 200 V. Ultrafast dual epitaxial rectifier diode in a SOT78 (TO-220AB) plastic package.

BAS16J. 1. Product profile. Single high-speed switching diode. 1.1 General description. 1.2 Features. 1.3 Applications. 1.4 Quick reference data

PNP 5 GHz wideband transistor IMPORTANT NOTICE. use

PMEG6010CEH; PMEG6010CEJ

PMEG3005EB; PMEG3005EL

BAS16VV; BAS16VY. Triple high-speed switching diodes. Type number Package Configuration. BAS16VV SOT666 - triple isolated BAS16VY SOT363 SC-88

DISCRETE SEMICONDUCTORS DATA SHEET. dbook, halfpage M3D049. BAS316 High-speed diode Feb 04. Product data sheet Supersedes data of 1998 Mar 26

PMEG6002EB; PMEG6002TV

PMEG3030EP. 1. Product profile. 3 A low V F MEGA Schottky barrier rectifier. 1.1 General description. 1.2 Features. 1.

Ultrafast, epitaxial rectifier diode in a SOD113 (TO-220F) plastic package.

Enhanced ultrafast dual rectifier diode. Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit I O(AV)

Planar PIN diode in a SOD523 ultra small plastic SMD package.

High-speed switching diode

Two elements in series configuration in a small SMD plastic package Low diode capacitance Low diode forward resistance AEC-Q101 qualified

Passivated sensitive gate triac in a SOT54 plastic package. General purpose switching and phase control

NPN 4 GHz wideband transistor IMPORTANT NOTICE. use

BAP Product profile. 2. Pinning information. 3. Ordering information. Silicon PIN diode. 1.1 General description. 1.2 Features and benefits

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

PMEG3020BER. 1. Product profile. 2 A low V F MEGA Schottky barrier rectifier. 1.1 General description. 1.2 Features. 1.

NPN 5 GHz wideband transistor IMPORTANT NOTICE. use

Dual ultrafast rugged rectifier diode. Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V RRM repetitive peak reverse voltage

Four planar PIN diode array in SOT363 small SMD plastic package.

DATA SHEET. BZB984 series Voltage regulator double diodes DISCRETE SEMICONDUCTORS Jun 21. Product data sheet Supersedes data of 2001 Nov 28

NXL0840 SCR logic level Rev February 2008 Product data sheet Product profile 1.1 General description 1.2 Features 1.

Planar PIN diode in a SOD882D leadless ultra small plastic SMD package.

SCR, 12 A, 15mA, 650 V, SOT78. Planar passivated SCR (Silicon Controlled Rectifier) in a SOT78 plastic package.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

60 V, 1 A PNP medium power transistors

DATA SHEET. BAS216 High-speed switching diode DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 1999 Apr May 28.

PESDxS1UL series. 1. Product profile. ESD protection diodes in a SOD882 package. 1.1 General description. 1.2 Features. 1.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

PMD5003K. 1. Product profile. MOSFET driver. 1.1 General description. 1.2 Features. 1.3 Applications. Quick reference data

BF1108; BF1108R. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.

OT Product profile. 2. Pinning information. Four-quadrant triac, enhanced noise immunity. 1.1 General description. 1.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

PSMN D. N-channel TrenchMOS SiliconMAX standard level FET

BTA202X series D and E

65 V, 100 ma NPN/NPN general-purpose transistor. Type number Package PNP/PNP NPN/PNP complement complement

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

PVR100AZ-B series. Integrated Zener diode and NPN bipolar transistor in one package. Table 1. Product overview Type number Package SOT457 complement

CAN bus ESD protection diode

N-channel TrenchMOS logic level FET

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

BAT54W series. 1. Product profile. 2. Pinning information. Schottky barrier diodes. 1.1 General description. 1.2 Features and benefits

High-speed switching in e.g. surface-mounted circuits

BC635; BCP54; BCX V, 1 A NPN medium power transistors

The sensor can be operated at any frequency between 0 Hz and 1 MHz.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

NPN low V CEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

PNP low V CEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

IMPORTANT NOTICE. use

DATA SHEET. BZV85 series Voltage regulator diodes DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 1996 Apr 26.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

BGA Product profile. MMIC amplifier. 1.1 General description. 1.2 Features and benefits. 1.3 Applications. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit V F forward voltage I F =10mA

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

High-speed switching diode in dual series configuration, encapsulated in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

ACT108W-600E. AC Thyristor power switch in a SOT223 surface-mountable plastic package

IMPORTANT NOTICE. use

Single Schottky barrier diode

High-speed switching diodes. Type number Package Configuration Package NXP JEITA JEDEC

PMEG4010ER. 1. Product profile. 1 A low V F MEGA Schottky barrier rectifier. 1.1 General description. 1.2 Features and benefits. 1.

BF909; BF909R. N-channel dual gate MOS-FETs IMPORTANT NOTICE. use

NPN 9 GHz wideband transistor. The transistor is encapsulated in a plastic SOT23 envelope.

BAV102; BAV103. Single general-purpose switching diodes

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

75 MHz, 30 db gain reverse amplifier

DISCRETE SEMICONDUCTORS DATA SHEET M3D319. BB145C Low-voltage variable capacitance diode. Preliminary specification 2001 Dec 11

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

BF1100; BF1100R IMPORTANT NOTICE. use

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

Transcription:

Rev. 03 16 February 2009 Product data sheet 1. Product profile 1.1 General description The is a variable capacitance diode, fabricated in planar technology and encapsulated in the SOD523 (SC-79) ultra small plastic SMD package. 1.2 Features Excellent linearity Ultra small plastic SMD package C d(28v) : 1 pf; C d(0v5) to C d(28v) ratio : 14 1.3 Applications 2. Pinning information Electronic tuning in satellite tuners Tunable coupling Voltage Controlled Oscillators (VCO) Table 1. Pinning Pin Description Simplified outline Graphic symbol 1 cathode [1] 2 anode 1 2 sym008 [1] The marking bar indicates the cathode. 3. Ordering information Table 2. Ordering information Type number Package Name Description Version SC-79 plastic surface mounted package; 2 leads SOD523

4. Marking Table 3. Marking codes Type number Marking code N 5. Limiting values 6. Characteristics Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V R reverse voltage - 30 V I F forward current - 20 ma T stg storage temperature 55 +150 C T j junction temperature 55 +150 C Table 5. Characteristics T j = 25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit I R reverse current see Figure 2 V R =30V - - na V R =30V; T j =85 C - - 200 na r s diode series resistance f = 470 MHz at C d =9pF - - 3 Ω C d diode capacitance f = 1 MHz; see Figure 1 and Figure 3 V R = 0.5 V 8-17 pf V R = 28 V 0.7-1.055 pf C d(0v5) /C d(28v) diode capacitance ratio (0.5 V to 28 V) f = 1 MHz 12-16 _3 Product data sheet Rev. 03 16 February 2009 2 of 6

15 mbe872 C d (pf) 5 0 1 1 2 V R (V) Fig 1. f = 1 MHz; T j = 25 C. Diode capacitance as a function of reverse voltage; typical values 3 mlc816 3 mlc815 I R (na) TC d (K 1 ) 2 4 1 0 20 40 60 80 0 T j ( C) 5 1 1 V 2 R (V) T j = 0 C to 85 C. Fig 2. Reverse current as a function of junction temperature; maximum values Fig 3. Temperature coefficient of diode capacitance as a function of reverse voltage; typical values _3 Product data sheet Rev. 03 16 February 2009 3 of 6

7. Package outline Plastic surface-mounted package; 2 leads SOD523 A c H E v M A D A 0 0.5 1 mm E b p 1 2 scale DIMENSIONS (mm are the original dimensions) UNIT A b p c D E H E v (1) mm 0.65 0.58 0.34 0.26 0.17 0.11 1.25 1.15 0.85 0.75 1.65 1.55 0.1 Note 1. The marking bar indicates the cathode. OUTLINE VERSION REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE SOD523 SC-79 02-12-13 06-03-16 Fig 4. Package outline SOD523 (SC-79) 8. Abbreviations Table 6. Acronym SMD VHF Abbreviations Description Surface Mounted Device Very High Frequency 9. Revision history Table 7. Revision history Document ID Release date Data sheet status Change notice Supersedes _3 20090216 Product data sheet - _N_2 Modifications: The format of this data sheet has been redesigned to comply with the new presentation and information standard of NXP semiconductors _N_2 200802 Product data sheet - _1 _1 19981126 Product specification - - _3 Product data sheet Rev. 03 16 February 2009 4 of 6

. Legal information.1 Data sheet status Document status [1][2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term short data sheet is explained in section Definitions. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com..2 Definitions Draft The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail..3 Disclaimers General Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer s own risk. Applications Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights..4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 11. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com _3 Product data sheet Rev. 03 16 February 2009 5 of 6

12. Contents 1 Product profile.......................... 1 1.1 General description...................... 1 1.2 Features.............................. 1 1.3 Applications........................... 1 2 Pinning information...................... 1 3 Ordering information..................... 1 4 Marking................................ 2 5 Limiting values.......................... 2 6 Characteristics.......................... 2 7 Package outline......................... 4 8 Abbreviations........................... 4 9 Revision history......................... 4 Legal information........................ 5.1 Data sheet status....................... 5.2 Definitions............................. 5.3 Disclaimers............................ 5.4 Trademarks............................ 5 11 Contact information...................... 5 12 Contents............................... 6 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section Legal information. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 16 February 2009 Document identifier: _3