Operational Amplifier ANSSM CMOS single power supply Overview ANSSM is an operational amplifier with a single power supply by CMOS diffusion process. It has low current-consumption compared to general purpose operational amplifier by bipolar diffusion process. V to V DD is available for both input voltage and output voltage. And this IC is widely applicable to the butterydriven equipment and to many amplifier circuits which adopt small package products. Features Low current-consumption: I DD = µa (typ.), V DD = V Operating input/output voltage range: V to V DD Small offset voltage:. mv (typ.) Small input bias current: pa (typ.) Operating supply voltage range:. V to. V or ±. V to ±.7 V Applications Various small-size general consumer electronics equipment Block Diagram Pin Descriptions Pin No. Symbol Description V OUT Output GND (V SS ) Ground, V SS (negative supply) at using two power supply V IN+ Input (positive) V IN Input (negative) V DD Power supply V DD V OUT GND (V SS ) V IN V IN+..6±...±..6 max. to....±..6±... +. -.. M.8 +. -. Seating plane Unit: mm SSMINI-DA (Lead-free package) includes following four Product lifecycle stage. Note) The ANSSM has been designed for general consumer electronics equipment, not for the specific one requiring such a high reliability that may prevent it from threatening the human lives. Publication date: August SFBCEB
ANSSM Absolute Maximum Ratings Parameter Symbol Rating Unit Supply voltage V DD.6 V Differential input voltage DV IN ±.6 V Input voltage V IN V SS to V DD V Supply current I DD ma Power dissipation * Operating ambient temperature * P D mw T opr to +8 C Storage temperature * T stg to + C Note). *: Except for the operating ambient temperature and storage temperature, all ratings are for T a = C. *: The value at T a = +8 C.. This IC is not suitable for car electrical equipment. Recommended Operating Range Parameter Symbol Range Unit Supply voltage V DD. to. V ±. to ±.7 Electrical Characteristics at V DD =. V, V SS = GND, T a = C ± C Parameter Symbol Conditions Min Typ Max Unit Input offset voltage V IO.. mv Common-mode input voltage CMV IN R S = kω, R F = kω V Open-loop gain GV f = Hz 6 9 db Maximum output amplitude voltage V OH R L kω.9.98 V Maximum output amplitude voltage V OL R L kω.. V Common-mode input voltage CMRR V IN =. V to. V, R S = R F = kω 6 db rejection ratio Supply voltage ripple rejection ratio * SVRR V DD =. V to. V 7 db Supply current I DD µa Note) * : Except for the supply voltage ripple rejection ratio (SVRR), V DD = V. Design reference data includes following four Product lifecycle stage. Note) The characteristics listed below are theoretical values based on the IC design and are not guaranteed. Parameter Symbol Conditions Reference Unit Offset current I O pa Input bias current I IO pa Slew rate SR R L kω. V/µs Zero-cross frequency f T A V =.8 MHz SFBCEB
ANSSM Technical Data P D T a curve of SSMINI-DA. P D T a Independent IC without a heat sink R th( j-a) = 8. C/W Main characteristics Supply current I DD (µa) 8 7 6 Power dissipation P D (W).... Supply current Supply voltage.... Supply voltage V DD (V). 7 8 VIN+ = VDD / High-level output voltage Output flow-out current High-level output voltage VOL (V)..8.6....8.6 V DD = V V IN+ = V Output flow-out current I O (ma) 6 Low-level output voltage VOL (V) Low-level output voltage Output flow-in current...8.6.. V V V Output flow-in current I O (ma) Slew rate SR VDD = V VIN+ = V V DD = V includes following four Product lifecycle stage. V V V V V Input Output (µs) SFBCEB
ANSSM Technical Data (continued) Main characteristics (continued) Offset voltage V IO (mv) Voltage gain (db) Offset voltage Ambient temperature 7 V DD = V V IN+ = V DD / Voltage gain Phase Frequency characteristics 6 Voltage gain k k k Frequency f (Hz) Application Circuit Example M V DD = V A V = db Phase M 8 9 Phase ( ) Supply current I DD (µa) 8 7 6 Supply current Ambient temperature VDD = V VIN+ = V DD / 7 V DD. µf V IN includes following four Product lifecycle stage. V OUT GND (V SS ) V IN+ SFBCEB
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