In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

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In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

DATA SHEET. PEMD12; PUMD12 NPN/PNP resistor-equipped transistors; R1 = 47 kω,r2=47kω DISCRETE SEMICONDUCTORS

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In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

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In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

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In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

DISCRETE SEMICONDUCTORS DATA SHEET M3D088. PBSS5120T 20 V, 1 A PNP low V CEsat (BISS) transistor. Product specification 2003 Sep 29

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

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In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

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In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

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In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

PEMD16; PUMD16. NPN/PNP resistor-equipped transistors; R1 = 22 kω, R2 = 47 kω. Type number Package PNP/PNP NPN/NPN complement complement

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

IMPORTANT NOTICE. use

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

NPN/PNP general-purpose double transistors. NPN/PNP general-purpose double transistors. Table 1: Product overview Type number Package Configuration

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

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In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

PEMB18; PUMB18. PNP/PNP resistor-equipped transistors; R1 = 4.7 k, R2 = 10 k

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

PEMH11; PUMH11. NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 10 k

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

NPN 4 GHz wideband transistor IMPORTANT NOTICE. use

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

DATA SHEET. PUMZ1 NPN/PNP general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2002 May 6.

DATA SHEET. PUMF12 PNP general purpose transistor; NPN resistor-equipped transistor DISCRETE SEMICONDUCTORS. Product specification 2002 Nov 07

NPN 5 GHz wideband transistor IMPORTANT NOTICE. use

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

PEMD48; PUMD48. NPN/PNP resistor-equipped transistors; R1 = 47 kω, R2 = 47 kω and R1 = 2.2 kω, R2 = 47 kω

PNP 5 GHz wideband transistor IMPORTANT NOTICE. use

DATA SHEET. BC868 NPN medium power transistor; 20 V, 1 A DISCRETE SEMICONDUCTORS. Product specification Data supersedes data of 1999 Apr 08

BFG520; BFG520/X; BFG520/XR

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

DATA SHEET. 2N5401 PNP high-voltage transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr 08.

DATA SHEET. BC618 NPN Darlington transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Oct Nov 05.

DATA SHEET. 2PC945 NPN general purpose transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 May 28.

PNP low V CEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

DATA SHEET. PEMZ1 NPN/PNP general purpose transistors DISCRETE SEMICONDUCTORS Nov 07. Product specification Supersedes data of 2001 Sep 25

Transcription:

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - NXP N.V. (year). ll rights reserved or Koninklijke Philips Electronics N.V. (year). ll rights reserved Should be replaced with: - Nexperia B.V. (year). ll rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia

DISCRETE SEMICONDUCTORS DT SHEET NPN/NPN resistor-equipped transistors; Supersedes data of 2003 Oct 02 2004 pr 14

FETURES Built-in bias resistors Simplified circuit design Reduction of component count Reduced pick and place costs. PPLICTIONS Low current peripheral driver Replacement of general purpose transistors in digital applications Control of IC inputs. QUICK REFERENCE DT SYMBOL PRMETER TYP. MX. UNIT V CEO collector-emitter 50 V voltage I O output current (DC) 100 m TR1 NPN TR2 NPN R1 bias resistor 10 kω R2 bias resistor open DESCRIPTION NPN/NPN resistor-equipped transistors (see Simplified outline, symbol and pinning for package details). PRODUCT OVERVIEW TYPE NUMBER PCKGE MRKING CODE (1) NPN/PNP PNP/PNP PHILIPS EIJ COMPLEMENT COMPLEMENT PEMH4 SOT666 H4 PEMD4 PEMB4 PUMH4 SOT363 SC-88 H*4 PUMD4 PUMB4 Note 1. * = p: Made in Hong Kong. * = t: Made in Malaysia. SIMPLIFIED OUTLINE, SYMBOL ND PINNING PINNING TYPE NUMBER SIMPLIFIED OUTLINE ND SYMBOL PIN DESCRIPTION PEMH4 1 emitter TR1 handbook, halfpage 6 5 4 6 5 4 PUMH4 2 base TR1 R1 3 collector TR2 TR2 4 emitter TR2 TR1 5 base TR2 R1 6 collector TR1 Top view 1 2 3 MM453 1 2 3 2004 pr 14 2

ORDERING INFORMTION PCKGE TYPE NUMBER NME DESCRIPTION VERSION PEMH4 Plastic surface mounted package; 6 leads SOT666 PUMH4 Plastic surface mounted package; 6 leads SOT363 LIMITING VLUES In accordance with the bsolute Maximum Rating System (IEC 60134). SYMBOL PRMETER CONDITIONS MIN. MX. UNIT Per transistor V CBO collector-base voltage open emitter 50 V V CEO collector-emitter voltage open base 50 V V EBO emitter-base voltage open collector 5 V I O output current (DC) 100 m I CM peak collector current 100 m P tot total power dissipation T amb 25 C Notes SOT363 note 1 200 mw SOT666 notes 1 and 2 200 mw T stg storage temperature 65 +150 C T j junction temperature 150 C T amb operating ambient temperature 65 +150 C Per device P tot total power dissipation T amb 25 C SOT363 note 1 300 mw SOT666 notes 1 and 2 300 mw 1. Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint. 2. Reflow soldering is the only recommended soldering method. 2004 pr 14 3

THERML CHRCTERISTICS SYMBOL PRMETER CONDITIONS VLUE UNIT Per transistor R th(j-a) thermal resistance from junction to ambient T amb 25 C SOT363 note 1 625 K/W SOT666 notes 1 and 2 625 K/W Per device R th(j-a) thermal resistance from junction to ambient T amb 25 C SOT363 note 1 416 K/W SOT666 notes 1 and 2 416 K/W Notes 1. Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint. 2. Reflow soldering is the only recommended soldering method. CHRCTERISTICS T amb = 25 C unless otherwise specified. SYMBOL PRMETER CONDITIONS MIN. TYP. MX. UNIT Per transistor I CBO collector-base cut-off current V CB = 50 V; I E = 0 100 n I CEO collector-emitter cut-off current V CE = 30 V; I B = 0 1 μ V CE = 30 V; I B = 0; T j = 150 C 50 μ I EBO emitter-base cut-off current V EB = 5 V; I C = 0 100 n h FE DC current gain V CE = 5 V; I C = 1 m 200 V CEsat collector-emitter saturation voltage I C = 10 m; I B = 0.5 m 150 mv R1 input resistor 7 10 13 kω C c collector capacitance V CB = 10 V; I E = i e = 0; f = 1 MHz 2.5 pf 2004 pr 14 4

PCKGE OUTLINE Plastic surface-mounted package; 6 leads SOT666 D E X S Y S H E 6 5 4 pin 1 index 1 2 3 c e1 bp w M Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT b p c D E e e 1 H E L p w y mm 0.6 0.5 0.27 0.17 0.18 0.08 1.7 1.5 1.3 1.1 1.0 0.5 1.7 1.5 0.3 0.1 0.1 0.1 OUTLINE VERSION REFERENCES IEC JEDEC JEIT EUROPEN PROJECTION ISSUE DTE SOT666 04-11-08 06-03-16 2004 pr 14 5

Plastic surface-mounted package; 6 leads SOT363 D B E X y H E v M 6 5 4 Q pin 1 index 1 2 3 1 c e1 bp w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT 1 max mm 1.1 0.8 0.1 bp c D E e e 1 H E Lp Q v w y 0.30 0.20 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.25 0.15 0.2 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC JEIT EUROPEN PROJECTION ISSUE DTE SOT363 SC-88 04-11-08 06-03-16 2004 pr 14 6

DT SHEET STTUS Notes DOCUMENT STTUS (1) PRODUCT STTUS (2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Production This document contains the product specification. 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLIMERS General Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer s own risk. pplications pplications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values Stress above one or more limiting values (as defined in the bsolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 2004 pr 14 7

Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com NXP B.V. 2009 ll rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/05/pp8 Date of release: 2004 pr 14 Document order number: 9397 750 13086