Agilent HCPL-34 AC Input Phototransistor Optocoupler SMD Mini-Flat Type Data Sheet Description The HCPL-34 contains a phototransistor, optically coupled to two light emitting diodes connected inverse parallel. It can operate directly by AC input current. It is packaged in a 4-pin mini-flat SMD package with a. mm profile. The small dimension of this product allows significant space saving. The package volume is 3% smaller than that of conventional DIP type. Inputoutput isolation voltage is 37 V rms. Response time, t r, is typically 4 µs and minimum CTR is % at input current of ± ma. Ordering Information Specify Part Number followed by Option Number (if desired). HCPL-34-XXXE Functional Diagram Lead Free Option Number = No Options 6 = IEC/EN/DIN EN 6747-- Option A = Rank Mark A Features AC input response Current transfer ratio (CTR: min. % at I F = ± ma, V CE = V) Isolation voltage between input and output (V iso = 3,7 V rms ) Subminiature type (The volume is smaller than that of conventional DIP type by as far as 3%) Mini-flat package. mm profile UL approved CSA approved IEC/EN/DIN EN 6747-- approved Options available: IEC/EN/DIN EN 6747-- approvals (6). ANODE, CATHODE. CATHODE, ANODE 4 3 3. EMITTER 4. COLLECTOR Applications Detecting or monitoring AC signals Programmable controllers AC/DC-input modules AC line/digital logic isolation CAUTION: It is advised that normal static precautions be taken in handling and assembly of this component to prevent damage and/or degradation which may be induced by ESD.
Package Outline Drawing HCPL-34-E.4 ±. LEAD FREE 34 YWW 4.4 ±. DATE CODE * 3.6 ±.3. ±..3 ±.3. ±. RANK *.4 ±.. ±. +. 7..7 DIMENSIONS IN MILLIMETERS. HCPL-34-6E.4 ±. LEAD FREE 34 V YWW 4.4 ±. DATE CODE * 3.6 ±.3. ±..3 ±.3. ±. RANK *.4 ±.. ±. +. 7..7 DIMENSIONS IN MILLIMETERS. Solder Reflow Temperature Profile ) One-time soldering reflow is recommended within the condition of temperature and time profile shown at right. ) When using another soldering method such as infrared ray lamp, the temperature may rise partially in the mold of the device. Keep the temperature on the package of the device within the condition of () above. Temperature ( C) C C 3 seconds 6 C (Peak Temperature) C 7 C C 6 sec 6 ~ sec 9 sec 6 sec Time (sec)
Absolute Maximum Ratings Parameters Symbol Min. Max. Units Storage Temperature T S C Ambient Operating Temperature T A C Lead Solder Temperature for s T sol 6 C (.6 mm below seating plane) Average Forward Current I F ± ma Input Power Dissipation P I 7 mw Collector Current I C ma Collector-Emitter Voltage V CEO 3 V Emitter-Collector Voltage V ECO 6 V Collector Power Dissipation P C mw Total Power Dissipation P tot 7 mw Isolation Voltage V iso 37 V rms (AC for minute, R.H. = 4 ~ 6%) [] Electrical Specifications (T A = C) Parameter Symbol Min. Typ. Max. Units Test Conditions Forward Voltage V F..4 V I F = ± ma Terminal Capacitance C t 3 pf V =, f = khz Collector Dark Current I CEO na V CE = V, I F = Collector-Emitter Breakdown Voltage BV CEO 3 V I C =. ma, I F = Emitter-Collector Breakdown Voltage BV ECO 6 V I E = µa, I F = Collector Current I C. 4 ma I F = ± ma, Current Transfer Ratio [] CTR 4 % V CE = V Collector-Emitter Saturation Voltage V CE(sat).. V I F = ± ma, I C = ma Isolation Resistance R iso x x Ω DC V 4 ~ 6% R.H. Floating Capacitance C f.6 pf V =, f = MHz Response Time (Rise) t r 4 8 µs V CE = V, I C = ma, Response Time (Fall) t f 3 8 µs R L = Ω Rank Mark CTR (%) Conditions A ~ I F = ± ma, No Mark ~ 4 V CE = V, T A = C Notes:. Isolation voltage shall be measured using the following method: (a) Short between anode and cathode on the primary side and between collector and emitter on the secondary side. (b) The isolation voltage tester with zero-cross circuit shall be used. (c) The waveform of applied voltage shall be a sine wave.. CTR = x % I C I F 3
I F FORWARD CURRENT ma 6 4 3-7 P C COLLECTOR POWER DISSIPATION mw - 7 V CE(SAT.) COLLECTOR-EMITTER SATURATION VOLTAGE V 6 4 3 T A = C I C =. ma I C = ma I C = 3 ma I C = ma I C = 7 ma.. 7.... I F FORWARD CURRENT ma Figure. Forward current vs. ambient temperature. Figure. Collector power dissipation vs. ambient temperature. Figure 3. Collector-emitter saturation voltage vs. forward current. I F FORWARD CURRENT ma T A = 7 C T A = C T A = C T A = C T A = - C..... 3. CTR CURRENT TRANSFER RATIO % 4 V CE = V T A = C 8 6 4... I C COLLECTOR CURRENT ma 4 3 T A = C I F = 3 ma P C (MAX.) I F = ma I F = ma I F = ma I F = ma 3 4 6 7 8 9 V F FORWARD VOLTAGE V I F FORWARD CURRENT ma V CE COLLECTOR-EMITTER VOLTAGE V Figure 4. Forward current vs. forward voltage. Figure. Current transfer ratio vs. forward current. Figure 6. Collector current vs. collectoremitter voltage. RELATIVE CURRENT TRANSFER RATIO % I F = ma V CE = V 4 6 8 V CE(SAT.) COLLECTOR-EMITTER SATURATION VOLTAGE V..8.6.4. I F = ma I C = ma 4 6 8 I CEO COLLECTOR DARK CURRENT na V CE = V 4 6 8 Figure 7. Relative current transfer ratio vs. ambient temperature. Figure 8. Collector-emitter saturation voltage vs. ambient temperature. Figure 9. Collector dark current vs. ambient temperature. 4
RESPONSE TIME µs. V CE = V I C = ma T A = C t r t f t d t s VOLTAGE GAIN AV db - R L = kω R L = kω R L = Ω V CE = V I C = ma T A = C..... -.. R L LOAD RESISTANCE kω f FREQUENCY khz Figure. Response time vs. load resistance. Figure. Frequency response. V CC INPUT INPUT R D R L OUTPUT OUTPUT % 9% t d t s t r t f Figure. Test circuit for response time. V CC R D R L OUTPUT Figure 3. Test circuit for frequency response.
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