ALM-GA GPS Low Noise Amplifier Variable urrent/shutdown Function Data Sheet Description Avago Technologies s ALM-GA is a LNA designed for GPS/ISM/Wimax applications in the (.9-.)GHz frequency range. The LNA uses Avago Technologies s proprietary GaAs Enhancement-mode phemt process to achieve high gain operation with very low noise figures and high linearity. Noise figure distribution is very tightly controlled. Gain and supply current are guaranteed parameters. A MOS compatible shutdown pin is included to turn the LNA off and provide a variable bias. The ALM-GA LNA is usable down to 1 V operation. It achieves low noise figures and high gain even at 1V, making it suitable for use in critical low power GPS/ISM band applications. Package Marking and Orientation Pin onfiguration Pin Pin 5 Pin O Top View GND Bottom View Note: Package marking provides Orientation and identification: B = Product ode Y = Year = Work Week Pin 1 Pin Pin LNA I/O s : 1. N. RF_IN. N. VSD 5. RF_OUT. VDD Features Operating temperature range - to +85 Surface Mount. x. x 1.1 mm MOB Advanced GaAs E-pHEMT Low Noise:.8 db typ High Gain: 1. db typ Low component count High IIP and IP1dB Wide Supply Voltage: 1 V to. V Shutdown current: <.1 µa MOS compatible shutdown pin (VSD) current @.85 V: 9 µa Adjustable bias current via one single external resistor/ voltage Small Footprint: x mm Low Profile: 1.1 mm typ. Lead-free and Halogen-free Ext matching for non-gps freq band operation Specifications (5 deg): At,.85 V 8 ma (Typ) Gain = 1. db (Typ) NF =.8 db (Typ) IIP =.7 dbm (Typ) IP1dB = 1.8 dbm (Typ) S11 = -11.8 db (Typ) S = -1. db (Typ) Note: Measurements obtained using demoboard described in Figure. Simplified Schematic VSD VDD BIAS RF_IN RF_OUT 1 Amplifier AMP1
Absolute Maximum Ratings [1] Symbol Parameter Units Absolute Maximum V DS Drain Source Voltage [] V. I DS G Drain urrent [] ma 15 Pdiss Total Power Dissipation [] mw 5 Pin max. RF Input Power dbm +1 T H hannel Temperature 15 T STG Storage Temperature -5 to 15 q ch_b Thermal Resistance [] /W Notes: 1. Operation of this device above any one of these parameters may cause permanent damage.. Assuming D quiescent conditions.. Board (package belly) temperature T B is 5. Derate.mW/ for T B > 17.. hannel-to-board thermal resistance measured using 15 Liquid rystal Measurement method. Electrical Specifications T A = 5, D bias for RF parameter is VDD = VSD = +.85V @ 8mA (unless otherwise specified) Table 1. Performance table at nominal operating conditions VDD= VSD = +.85V, R1 = 18K Ohm, Freq= Typical Performance Symbol Parameter and Test ondition Units Min. Typ Max. G Gain db 1. NF Noise Figure db.8 IP1dB Input 1dB ompressed Power dbm 1.8 IIP Input rd Order Intercept Point (-tone @ Fc +/-.5MHz) dbm.7 S11 Input Return Loss db -11.8 S Output Return Loss db - 1. Ids Supply urrent ma 8 Ish Shutdown urrent @ VSD = V ua.1 Vds Supply Voltage V.85 IP1dB 171M Out of Band IP1dB (DS 171MHz) blocking dbm.9 IIP OUT Out of Band IIP (DS 1775MHz & 195MHz) dbm 5.5 Table. Typical performance at low operation voltages with R1 (see Fig ) set to Ohm VDD = +V, VDD= +1.5V & VDD= +1.V, Freq= Typical Performance (VSD=VDD, R1= Ohm) Symbol Parameter and Test ondition Units VDD = V VDD = 1.5V VDD = 1.V G Gain db 15 1. 1. NF Noise Figure db.8.9 1 IP1dB Input 1dB ompressed Power dbm -1. -. -.8 IIP Input rd Order Intercept Point (-tone @ Fc +/-.5MHz) dbm 7..9 5. S11 Input Return Loss db -1.8-11.5-8 S Output Return Loss db -15.5-1.5-11.7 Ids Supply urrent ma 1 7.5. Ish Shutdown urrent @ VSD = V ua.1.1.1 Vds Supply Voltage V 1.5 1. IP1dB 171M Out of Band IP1dB (DS 171MHz) blocking dbm -. -1.9 -.9 IIP OUT Out of Band IIP (DS 1775MHz & 195MHz) dbm 8.7 5.8
GND VDD SD GND H.1 W. e.8.1µf 1Ω / / nh.8pf RF IN 5.nH.7nH 1pF RF OUT 1nH 18k.8pF GPS LNA MAR 5 TL. Avago Technologies Figure 1. Demoboard and Application ircuit omponents VSD RF_IN =.8 pf R R1 R=18 kohm L L1 L=5. nh Johanson =.1 uf 1 L L L=1 nh Johanson BIAS 5 =.8 pf Amplifier AMP1 +VDD PRL PRL1 R=1 Ohm L= nh Johanson L L L=.7 nh R= Toko LL15 RF_OUT Notes L1 and L form the input matching network. The LNA module has a integrated coupling and D-blocking capacitors at the input and output. Best noise performance is obtained using high-q wirewound inductors. This circuit demonstrates that low noise figures are obtainable with standard chip inductors. Replacing L1, L and L with high-q wirewound inductors (eg. ilcraft S series) will yield.1db lower NF and.db higher Gain. L is an output matching inductor. 5 is a RF bypass capacitor. PRL1 is a network that isolates the measurement demoboard from external disturbances. and mitigates the effect of external noise pickup on the VSD and VDD lines. These components are not required in actual operation. Bias control is achieved by either varying the VSD voltage without R1 or fixing the VSD voltage to VDD and varying R1. Typical value for R1 is 18k Ohm for 8mA total current at VDD=+.85V. Higher gain and IP performance can be obtained by increasing the supply current. This can be achieved by reducing the value for R1 to obtain desired current. For low voltage operation such as 1.5V or 1.V, the R1 may be omitted and VSD connected directly to the supply pins. Figure. Demoboard schematic
ALM-GA Typical Performance urves, R1 = 18K Ohm (At 5 unless specified otherwise) Gain (db) 1 15 1 1 1 11 1 9 GHz.GHz Figure. Gain vs Vdd vs Freq NF (db).95.9.85.8.75.7 GHz.GHz Figure. NF vs Vdd vs Freq IIP (dbm) 1 1 8 Figure 5. IIP vs Vdd vs Freq GHz.GHz IP1dB (dbm) 5 1 GHz.GHz Figure. IP1dB vs Vdd vs Freq Ids (ma) 1 1 8 GHz.GHz Figure 7. Ids vs Vdd vs Freq
ALM-GA Typical Performance urves, R1 = 18K Ohm (At 5 unless specified otherwise) Gain (db) 1 15 1 1 1 11 Figure 8. Gain vs Vdd vs Temp 5 deg - deg NF (db) 1. 1. 1.8... 5 deg - deg Figure 9. NF vs Vdd vs Temp IIP (dbm) 7 5 1 Figure 1. IIP vs Vdd vs Temp 5 deg - deg IP1dB (dbm).5 1.5 1.5 5 deg - deg Figure 11. IP1dB vs Vdd vs Temp Ids (ma) 1 11 1 9 8 7 5 5 deg - deg Figure 1. Ids vs Vdd vs Temp 5
ALM-GA Typical Scattering Parameters at 5, V DD =.85V, I DS = 8 ma Freq. (GHz) S11 S1 S1 S Mag. Ang. (db) Mag. Ang. (db) Mag. Ang. Mag. Ang..1.998 -.7 15.1 5. 17.7-7.9. 89..5-5.5.9 -.5 1. 5.81 15.1 -..19 78..5-19.9.8 -. 1.7.85 1.1-9.9. 71.8.75-1.9 1.8 -. 1.7.71 19.7-9.7. 7.5.8 -.9 1.1.81-8. 1..57 15.5-8..7 9..59-7.9 1..8-5 1.95. 11.5-7.9. 8.5.51 -.5 1..78-55.8 1.9.1 117. -7.. 7.. -. 1..757-59.7 1..178 11. -.9.5.5.5-5.8 1.5.71 -. 1.1.9 19.7 -.8.8 5.7.8-8. 1..75 -.8 11.8.95 1.1 -..5.8.1-5.7 1.7.8-9.7 11.55.78 1.9-5.51.5.7.1-5.8 1.8. -71. 11.9.9 99.5-5.19.55.9.8-55.5 1.9. -7. 1.99.5 9 -.7.58.1.99-58. -75. 1.8. 97 -.58.59..98-58.8.1. -77. 1.5.5 9.5 -.15. 5.5.98-59...58-79 1.1.15 9. -.7.5..97 -...5-8.9 9.77.79 87 -.8.7.8.9-1.1..5-8.8 9.9.98 8.8 -.1.7.9 -.1.5.5-85. 9..895 81.1 -.7.7..95 -.7. -15. 7.95.98. -1.1.87 5.9.5-7..5. -119.5.7.15 57. -..97 5. -8.8. -1.1.5.5 8.8-18..1 5.7.71-18.5.97-11.8 5.5 1.88.1-1.95.1..5-11. 5.7-157.1. 1.7.9-15.97.159 8.59-118. 5.5.5-17.1. 1.519 1.1-15..177.7. -1..11 178.7.8 1.8. -1.11.197 5..9-1.7.5. 15. 1.89 1. -.7-1..8 1.7. -15.7 7.189 17.1 1.5 1.197-5. -1.7.17 1.7. -171. 7.5.19 117. 1. 1.1-1. -1.88.7 9.5.1 179.8 8. 9..87 1.15 -. -1...7.1 17.8
ALM-GA Typical Noise Parameters, V DD =.85V, I DS = 8mA Freq GHz F min db Γ opt Mag. Γ opt Ang. Rn/5 NF @ 5 db.5.5. 1.8.1 1..9.5.9..8 1.7 1.5.8.71 7.. 1. 1.7.8.9 58.1. 1.1.91.8 59.5. 1.1..9. 71..7 1.7 1.1.5 99..1 1.5.5 1.. 15.8.1 1. 1.9.5 11..8 1.7.5 1.7.1 171.. 1.7 5 1.8. -179.. 1.5 5.5 1.98. -171..8.1 5.8.7. -17.8.1.88 Part Number Ordering Information Part Number No. of Devices ontainer ALM-GA-BLKG 1 antistatic bag ALM-GA-TR1G 7 Reel Package Dimensions. ±.1 1.1 ±.1. R.15 (X). PIN 1 PIN 1. ±.1 (X).5 1. (X).9 (X).1 (X). Top View Side View Bottom View 7
Device Orientation REEL USER FEED DIRETION ARRIER TAPE USER FEED DIRETION OVER TAPE TOP VIEW END VIEW Tape Dimensions.±.1.±.1 SEE NOTE # ø 1. 1.5 THRU B..18 8.1 7.9.5±.1 Bo 1.85 1.5 A A X1 1.±.1 1.±.1 X.±.1 Notes: 1. Measured from centerline of sprocket hole to centerline of pocket. umulative tolerance of 1 sprocket holes is ±. All dimensions in millimeters unless otherwise stated. ø 1.5 1. THRU B Ko Section B-B 8
Reel Dimensions Ø178.±1. FRONT BAK SEE DETAIL "X" REYLE LOGO FRONT VIEW R1.5 5 5 7.9-1.9* +1.5* 8. -. R5. Slot hole b FRONT BAK Ø55.±.5 Ø178.±1. EMBOSSED RIBS RAISED:.5mm, WIDTH: 1.5mm BAK VIEW Slot hole a Ø51.±. 1.* MAX. For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries. Data subject to change. opyright 5-1 Avago Technologies. All rights reserved. AV-55EN - June, 1