KSC1845. h FE2 V CE =6V, I C =1mA. Classification P F E U h FE2 200 ~ ~ ~ ~ 1200

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KSC845 KSC845 Audio Frequency Low Noise Amplifier Complement to KSA992 TO-92. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T a =25 C unless otherwise noted Symbol Parameter Value Units V CBO Collector-Base Voltage 2 V V CEO Collector-Emitter Voltage 2 V V EBO Emitter-Base Voltage 5 V I C Collector Current 5 ma I B Base Current ma P C Collector Power Dissipation 5 mw T J Junction Temperature 5 C T STG Storage Temperature -55 ~ 5 C Electrical Characteristics T a =25 C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units I CBO Collector Cut-off Current V CB =2V, I E = 5 na I EBO Emitter Cut-off Current V EB =5V, I C = 5 na h FE DC Current Gain V CE =6V, I C =.ma h FE2 V CE =6V, I C =ma 5 2 58 6 2 V BE (on) Base-Emitter On Voltage V CE =6V, I C =ma.55.59.65 V V BE (sat) Collector-Emitter Saturation Voltage I C =ma, I B =ma.7.3 V f T Current Gain Bandwidth Product V CE =6V, I C =ma 5 MHz C ob Output Capacitance V CB =3V, I E =, f=mhz.6 2.5 pf NL Noise Level 25 4 mv h FE Classification Classification P F E U h FE2 2 ~ 4 3 ~ 6 4 ~ 8 6 ~ 2 22 Fairchild Semiconductor Corporation Rev. B2, November 22

Typical Characteristics I B =6µA. I B =.4µA IB =.2µA KSC845 I C [ma], COLLECTOR CURRENT 8 6 4 2 I B =4µA I B =2µA I B =µa I B =8µA I B =6µA I B =4µA I B =2µA I C [ma], COLLECTOR CURRENT.8.6.4.2 I B =.µa I B =.8µA I B =.6µA I B =.4µA I B =.2µA 2 3 4 5 V CE [V], COLLECTOR-EMITTER VOLTAGE. 2 4 6 8 V CE [V], COLLECTOR-EMITTER VOLTAGE Figure. Static Characteristic Figure 2. Static Characteristic hfe, DC CURRENT GAIN 9 8 7 6 5 4 3 2 VCE = 6V Pule Test.. VBE(sat), VCE(sat)[V], SATURATION VOLTAGE. VBE(sat) VCE(sat) IC=IB Pulse Test.. Figure 3. DC current Gain Figure 4. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Cob[pF], CAPACITANCE f=mhz IE=. ft[mhz], CURRENT GAIN-BANDWIDTH PRODUCT k k VCE=6V. VCB[V], COLLECTOR-BASE VOLTAGE IE[mA], EMITTER CURRENT Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product 22 Fairchild Semiconductor Corporation Rev. B2, November 22

Typical Characteristics (Continued) 8 KSC845. VCE = 6V Pulse Test PC[mW], POWER DISSIPATION 7 6 5 4 3 2..4.5.6.7.8.9 25 5 75 25 5 75 VBE[V], BASE-EMITTER VOLTAGE Ta[ o C], CASE TEMPERATURE Figure 7. Collector Current vs. Base-Emitter Voltage Figure 8. Power Derating 22 Fairchild Semiconductor Corporation Rev. B2, November 22

Package Dimensions KSC845 TO-92 4.58 +.25.5 3.86MAX.46 ±..27TYP [.27 ±.2].2 ±..38 +..5.27TYP [.27 ±.2] 3.6 ±.2 (R2.29) (.25) 4.47 ±.4 4.58 ±.2.38 +..5 Dimensions in Millimeters 22 Fairchild Semiconductor Corporation Rev. B2, November 22

TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx ActiveArray Bottomless CoolFET CROSSVOLT DOME EcoSPARK E 2 CMOS EnSigna FACT FACT Quiet series FAST FASTr FRFET GlobalOptoisolator GTO HiSeC I 2 C Across the board. Around the world. The Power Franchise Programmable Active Droop ImpliedDisconnect ISOPLANAR LittleFET MicroFET MicroPak MICROWIRE MSX MSXPro OCX OCXPro OPTOLOGIC OPTOPLANAR PACMAN POP Power247 PowerTrench QFET QS QT Optoelectronics Quiet Series RapidConfigure RapidConnect SILENT SWITCHER SMART START SPM Stealth SuperSOT -3 SuperSOT -6 SuperSOT -8 SyncFET TinyLogic TruTranslation UHC UltraFET VCX DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. 22 Fairchild Semiconductor Corporation Rev. I