KSC845 KSC845 Audio Frequency Low Noise Amplifier Complement to KSA992 TO-92. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T a =25 C unless otherwise noted Symbol Parameter Value Units V CBO Collector-Base Voltage 2 V V CEO Collector-Emitter Voltage 2 V V EBO Emitter-Base Voltage 5 V I C Collector Current 5 ma I B Base Current ma P C Collector Power Dissipation 5 mw T J Junction Temperature 5 C T STG Storage Temperature -55 ~ 5 C Electrical Characteristics T a =25 C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units I CBO Collector Cut-off Current V CB =2V, I E = 5 na I EBO Emitter Cut-off Current V EB =5V, I C = 5 na h FE DC Current Gain V CE =6V, I C =.ma h FE2 V CE =6V, I C =ma 5 2 58 6 2 V BE (on) Base-Emitter On Voltage V CE =6V, I C =ma.55.59.65 V V BE (sat) Collector-Emitter Saturation Voltage I C =ma, I B =ma.7.3 V f T Current Gain Bandwidth Product V CE =6V, I C =ma 5 MHz C ob Output Capacitance V CB =3V, I E =, f=mhz.6 2.5 pf NL Noise Level 25 4 mv h FE Classification Classification P F E U h FE2 2 ~ 4 3 ~ 6 4 ~ 8 6 ~ 2 22 Fairchild Semiconductor Corporation Rev. B2, November 22
Typical Characteristics I B =6µA. I B =.4µA IB =.2µA KSC845 I C [ma], COLLECTOR CURRENT 8 6 4 2 I B =4µA I B =2µA I B =µa I B =8µA I B =6µA I B =4µA I B =2µA I C [ma], COLLECTOR CURRENT.8.6.4.2 I B =.µa I B =.8µA I B =.6µA I B =.4µA I B =.2µA 2 3 4 5 V CE [V], COLLECTOR-EMITTER VOLTAGE. 2 4 6 8 V CE [V], COLLECTOR-EMITTER VOLTAGE Figure. Static Characteristic Figure 2. Static Characteristic hfe, DC CURRENT GAIN 9 8 7 6 5 4 3 2 VCE = 6V Pule Test.. VBE(sat), VCE(sat)[V], SATURATION VOLTAGE. VBE(sat) VCE(sat) IC=IB Pulse Test.. Figure 3. DC current Gain Figure 4. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Cob[pF], CAPACITANCE f=mhz IE=. ft[mhz], CURRENT GAIN-BANDWIDTH PRODUCT k k VCE=6V. VCB[V], COLLECTOR-BASE VOLTAGE IE[mA], EMITTER CURRENT Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product 22 Fairchild Semiconductor Corporation Rev. B2, November 22
Typical Characteristics (Continued) 8 KSC845. VCE = 6V Pulse Test PC[mW], POWER DISSIPATION 7 6 5 4 3 2..4.5.6.7.8.9 25 5 75 25 5 75 VBE[V], BASE-EMITTER VOLTAGE Ta[ o C], CASE TEMPERATURE Figure 7. Collector Current vs. Base-Emitter Voltage Figure 8. Power Derating 22 Fairchild Semiconductor Corporation Rev. B2, November 22
Package Dimensions KSC845 TO-92 4.58 +.25.5 3.86MAX.46 ±..27TYP [.27 ±.2].2 ±..38 +..5.27TYP [.27 ±.2] 3.6 ±.2 (R2.29) (.25) 4.47 ±.4 4.58 ±.2.38 +..5 Dimensions in Millimeters 22 Fairchild Semiconductor Corporation Rev. B2, November 22
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