PD-94283E RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) IRHMS5976 JANSR2N755T V, P-CHANNEL REF: MIL-PRF-95/73 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHMS5976 K Rads (Si).5Ω -45A JANSR2N755T IRHMS5936 3K Rads (Si).5Ω -45A JANSF2N755T International Rectifier s R5 TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 8 (MeV/(mg/cm 2 )).The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. Absolute Maximum Ratings Parameter ID @ VGS = -2V, TC=25 C Continuous Drain Current -45 ID @ VGS = -2V, TC= C Continuous Drain Current -28.5 IDM Pulsed Drain Current À -8 Units PD @ TC = 25 C Max. Power Dissipation 28 W Linear Derating Factor.67 W/ C VGS Gate-to-Source Voltage ±2 V EAS Single Pulse Avalanche Energy Á 48 mj IAR Avalanche Current À -45 A EAR Repetitive Avalanche Energy À 2.8 mj dv/dt Peak Diode Recovery dv/dt  -6. V/ns TJ Operating Junction -55 to 5 TSTG Storage Temperature Range Lead Temperature 3 (.63in./.6mm from case for s) C Weight 9.3 (Typical) g For footnotes refer to the last page Low-Ohmic TO-254AA Features: n Single Event Effect (SEE) Hardened n Identical Pre- and Post-Electrical Test Conditions n Repetitive Avalanche Ratings n Dynamic dv/dt Ratings n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Electically Isolated n Ceramic Eyelets n Light Weight n High Electrical Conductive Package www.irf.com A 2/3/7
IRHMS5976, JANSR2N755T Electrical Characteristics @ Tj = 25 C (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions BVDSS Drain-to-Source Breakdown Voltage - V VGS = V, ID = -.ma BVDSS/ TJ Temperature Coefficient of Breakdown -.3 V/ C Voltage Reference to 25 C, ID = -.ma RDS(on) Static Drain-to-Source On-State.5 Ω VGS = -2V, ID = -28.5A Ã Resistance VGS(th) Gate Threshold Voltage -2. -4. V VDS = VGS, ID = -.ma gfs Forward Transconductance 24 S VDS > -5V, IDS = -28.5A Ã IDSS Zero Gate Voltage Drain Current - VDS= -8V,VGS=V -25 µa VDS = -8V, VGS = V, TJ = 25 C IGSS Gate-to-Source Leakage Forward - VGS = -2V na IGSS Gate-to-Source Leakage Reverse VGS = 2V Qg Total Gate Charge 7 VGS =-2V, ID = -45A Qgs Gate-to-Source Charge 65 nc VDS = -5V Qgd Gate-to-Drain ( Miller ) Charge 3 td(on) Turn-On Delay Time 35 VDD = -5V, ID = -45A tr Rise Time ns VGS =-2V, RG =.2Ω td(off) Turn-Off Delay Time tf Fall Time LS + LD Total Inductance 6.8 nh Measured from Drain lead (6mm /.25in. from package) to Source lead (6mm /.25in. from package) with Source wires internally bonded from Source Pin to Drain Pad Ciss Input Capacitance 6 VGS = V, VDS = -25V Coss Output Capacitance 574 pf f =.MHz Crss Reverse Transfer Capacitance 5 Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units Test Conditions IS Continuous Source Current (Body Diode) -45 ISM Pulse Source Current (Body Diode) À -8 A VSD Diode Forward Voltage -5. V Tj = 25 C, IS = -45A, VGS = V Ã trr Reverse Recovery Time 2 ns Tj = 25 C, IF =-45A, di/dt -A/µs QRR Reverse Recovery Charge.6 µc VDD -5V Ã ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter Min Typ Max Units Test Conditions RthJC Junction-to-Case.6 RthCS Case-to-Sink.2 C/W RthJA Junction-to-Ambient 48 Typical socket mount Note: Corresponding Spice and Saber models are available on International Rectifier Website. For footnotes refer to the last page 2 www.irf.com
Radiation Characteristics IRHMS5976, JANSR2N755T International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table. Electrical Characteristics @ Tj = 25 C, Post Total Dose Irradiation ÄÅ Parameter K Rads(Si) 3KRads(Si) 2 Units Test Conditions Min Max Min Max BV DSS Drain-to-Source Breakdown Voltage - - V V GS = V, I D = -.ma VGS(th) Gate Threshold Voltage -2. -4. -2. -5. VGS = V DS, I D = -.ma I GSS Gate-to-Source Leakage Forward - - na V GS =-2V I GSS Gate-to-Source Leakage Reverse V GS = 2 V I DSS Zero Gate Voltage Drain Current - - µa V DS = -8V, V GS =V R DS(on) Static Drain-to-Source Ã.5.5 Ω VGS = -2V, I D =-28.5A On-State Resistance (TO-3) V SD Diode Forward Voltage à -5. -5. V V GS = V, IS = -45A. Part number IRHMS5976 (JANSR2N755T) 2. Part number IRHMS5936 (JANSF2N755T) International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion LET Energy Range V DS (V) (MeV/(mg/cm 2 )) (MeV) (µm) @VGS=V @VGS=5V @VGS=V @VGS=5V @VGS=7.5V Br 37.9 252.6 33. - - - - - I 59.7 34 3.5 - - - - -75 Au 82.3 35 28.4 - - - -3 @VGS=2V - -25 VDS -2 - -8-6 -4-2 5 5 2 VGS Br I Au For footnotes refer to the last page Fig a. Single Event Effect, Safe Operating Area www.irf.com 3
IRHMS5976, JANSR2N755T -I D, Drain-to-Source Current (A) VGS TOP -5V -2V -V -9.V -8.V -7.V -6.V BOTTOM -5.V -5.V 2µs PULSE WIDTH T J = 25 C. -V DS, Drain-to-Source Voltage (V) -I D, Drain-to-Source Current (A) VGS TOP -5V -2V -V -9.V -8.V -7.V -6.V BOTTOM-5.V -5.V 2µs PULSE WIDTH T J = 5 C. -V DS, Drain-to-Source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics -I D, Drain-to-Source Current (A) T J = 25 C T J = 5 C V DS= 5-5V 2µs PULSE WIDTH 5. 5.5 6. 6.5 7. -V GS, Gate-to-Source Voltage (V) R DS(on), Drain-to-Source On Resistance (Normalized) 2.5 I D = -45A 2..5..5 V GS = -2V. -6-4 -2 2 4 6 8 2 4 6 T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 4 www.irf.com
-I D, Drain-to-Source Current (A) IRHMS5976, JANSR2N755T C, Capacitance (pf) 8 6 4 2 VGS = V, f = MHz Ciss = Cgs + Cgd, C ds SHORTED Crss = Cgd Coss = Cds + Cgd C iss C oss FOR TEST CIRCUIT C rss SEE FIGURE 3 4 8 2 6 2 24 -V DS, Drain-to-Source Voltage (V) Q G, Total Gate Charge (nc) -V GS, Gate-to-Source Voltage (V) 2 6 2 8 4 I = D -45A V DS =-8V V DS =-5V V DS =-2V Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage -I SD, Reverse Drain Current (A) T J = 5 C T J = 25 C V GS = V...5 3. 4.5 6. -V SD,Source-to-Drain Voltage (V) Tc = 25 C Tj = 5 C Single Pulse OPERATION IN THIS AREA LIMITED BY R DS (on) µs ms ms -V DS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com 5
-I D, Drain Current (A) IRHMS5976, JANSR2N755T 5 V DS R D 4 R G V GS D.U.T. + - V DD 3 2 25 5 75 25 5 T C, Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature V GS Pulse Width µs Duty Factor. % Fig a. Switching Time Test Circuit V GS t d(on) t r t d(off) t f % 9% V DS Fig b. Switching Time Waveforms D =.5 Thermal Response ( Z thjc ).....2..5.2. SINGLE PULSE ( THERMAL RESPONSE ) E-6 E-5.... t, Rectangular Pulse Duration (sec) P DM t t 2 Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthjc + Tc Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com
IRHMS5976, JANSR2N755T Fig 2a. Unclamped Inductive Test Circuit I AS R G V DS -2V V GS tp I AS L D.U.T.Ω DRIVER - + 5V V DD A E AS, Single Pulse Avalanche Energy (mj) 8 6 4 2 I D TOP -2A -28.5A BOTTOM -45A 25 5 75 25 5 Starting T, Junction Temperature ( J C) Fig 2c. Maximum Avalanche Energy Vs. Drain Current tp V (BR)DSS Fig 2b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. -2 V Q GS Q G Q GD -2V.2µF 5KΩ.3µF D.U.T. - + V DS V G V GS -3mA Charge I G I D Current Sampling Resistors Fig 3a. Basic Gate Charge Waveform Fig 3b. Gate Charge Test Circuit www.irf.com 7
IRHMS5976, JANSR2N755T Footnotes: À Repetitive Rating; Pulse width limited by maximum junction temperature. Á VDD = -5V, starting TJ = 25 C, L=.48mH Peak IL = -45A, VGS = -2V Â ISD -45A, di/dt -365A/µs, VDD -V, TJ 5 C Case Outline and Dimensions Low-Omic TO-254AA 3.78 [.49] 3.53 [.39] A 3.84 [.545] 3.59 [.535] Ã Pulse width 3µs; Duty Cycle 2% Ä Total Dose Irradiation with VGS Bias. -2 volt VGS applied and VDS = during irradiation per MIL-STD-75, method 9, condition A. Å Total Dose Irradiation with VDS Bias. -8 volt VDS applied and VGS = during irradiation per MlL-STD-75, method 9, condition A. 6.6 [.26] 6.32 [.249].2 [.5].27 [.5].2 [.4] 7.4 [.685] 6.89 [.665] 2.32 [.8] 2.7 [.79] 3.84 [.545] 3.59 [.535] B 2 3 C 4.48 [.57] 2.95 [.5].84 [.33] MAX. 3.8 [.5] 2X 3X.4 [.45].89 [.35].36 [.4] B A 3.8 [.5] NOT ES:. DIMENSIONING & TOLERANCING PER ASME Y4.5M-994. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 3. CONTROLLING DIMENSION: INCH. 4. CONFORMS TO JEDEC OUTLINE TO-254AA. PIN ASSIGNMENTS = DRAIN 2 = SOURCE 3 = GATE CAUTION BERYLLIA WARNING PER MIL-PRF-95 Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 9245, USA Tel: (3) 252-75 IR LEOMINSTER : 25 Crawford St., Leominster, Massachusetts 453, USA Tel: (978) 534-5776 TAC Fax: (3) 252-793 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 2/27 8 www.irf.com