Gain Slope issues in Microwave modules?

Similar documents
Limiter Diodes Features Description Chip Dimensions Model DOT Diameter (Typ.) Chip Number St l Style Inches 4 11

SMT Hybrid Couplers, RF Parameters and Applications

ENGAT00000 to ENGAT00010

Application Note 5011

Flip-Chip for MM-Wave and Broadband Packaging

Application Note 5012

ABA GHz Broadband Silicon RFIC Amplifier. Application Note 1349

GaAs, phemt, MMIC, Single Positive Supply, DC to 7.5 GHz, 1 W Power Amplifier HMC637BPM5E

Electromagnetic Analysis of AC Coupling Capacitor Mounting Structures

Monolithic Amplifier AVA-24A+ Wideband, Microwave. 5 to 20 GHz

Custom MMIC Packaging Solutions for High Frequency Thermally Efficient Surface Mount Applications.

TT9 SMT Series. Attenuator Chip 500 Milliwatts

Application Note 1360

DEVELOPMENT AND PRODUCTION OF HYBRID CIRCUITS FOR MICROWAVE RADIO LINKS

P21BN300M5S Milli Cap

Digital Step Attenuators offer Precision and Linearity

Methodology for MMIC Layout Design

KH300 Wideband, High-Speed Operational Amplifier

Surface Mount SOT-363 (SC-70) Package. Pin Connections and Package Marking GND 1 4 V CC

Design and Layout of a X-Band MMIC Power Amplifier in a Phemt Technology

Research on Broadband Microwave Temperature Compensation Attenuator

KH103 Fast Settling, High Current Wideband Op Amp

RF/Microwave Circuits I. Introduction Fall 2003

Radio Frequency Electronics

MPS S & MPS S CONTROL DEVICE MONOLITHIC SPST PIN RoHS Compliant

Products. Dielectric Resonators. Description: Specifications: Attenuation:

Application Note 5525

ESD Sensitive Component!!

Model 2425B50-50C Rev. A

Features. Preliminary. = +25 C, IF = 1 GHz, LO = +13 dbm*

ECE 145A/218A, Lab Project #1b: Transistor Measurement.

ECEN 5014, Spring 2009 Special Topics: Active Microwave Circuits Zoya Popovic, University of Colorado, Boulder

GHz Voltage Variable Attenuator (Absorptive)

Including the proper parasitics in a nonlinear

High Frequency Single & Multi-chip Modules based on LCP Substrates

High Isolation GaAs MMIC Doubler

Features. Gain: 14.5 db. Electrical Specifications [1] [2] = +25 C, Rbias = 825 Ohms for Vdd = 5V, Rbias = 5.76k Ohms for Vdd = 3V

ENGDA Wideband Distributed Amplifier, DIE, 0.8 to 20 GHz ENGDA Features. Typical Applications. Description. Functional Block Diagram

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

2 GHz to 28 GHz, GaAs phemt MMIC Low Noise Amplifier HMC7950

1.9GHz Power Amplifier

APPLICATION NOTE FOR PA.710A ANTENNA INTEGRATION

= 25 C) Parameter 0.5 GHz 1.0 GHz 2.5 GHz 4.0 GHz 6.0 GHz Units. Gain db. 23 dbm W

CHAPTER - 3 PIN DIODE RF ATTENUATORS

Surface Mount SOT-363 (SC-70) Package. Pin Connections and Package Marking GND. V dd. Note: Package marking provides orientation and identification.

PART MAX2605EUT-T MAX2606EUT-T MAX2607EUT-T MAX2608EUT-T MAX2609EUT-T TOP VIEW IND GND. Maxim Integrated Products 1

MGA GHz 3 V, 17 dbm Amplifier. Data Sheet. Features. Description. Applications. Surface Mount Package. Simplified Schematic

Thin-Film Directional Couplers

Application Note 1285

HMC6380LC4B. WIDEBAND VCOs - SMT. Electrical Specifications, T A. Typical Applications. Features. General Description. Functional Diagram

MAAM Wideband Amplifier 10 MHz - 40 GHz Rev. V2. Features. Functional Schematic. Description. Pin Configuration. Ordering Information 1,2

DESIGN CONSIDERATIONS AND PERFORMANCE REQUIREMENTS FOR HIGH SPEED DRIVER AMPLIFIERS. Nils Nazoa, Consultant Engineer LA Techniques Ltd

NLB-310. Cascadable Broadband GaAs MMIC Amplifier DC to 10GHz

AN-1098 APPLICATION NOTE

California Eastern Laboratories

CHAPTER 5 ANALYSIS OF MICROSTRIP PATCH ANTENNA USING STACKED CONFIGURATION

HMPP-386x Series MiniPak Surface Mount RF PIN Diodes

Gain Equalizers EQY-SERIES. Microwave. The Big Deal

MMA D 30KHz-50GHz Traveling Wave Amplifier With Output Power Detector Preliminary Data Sheet

HMMC-1002 DC 50 GHz Variable Attenuator. Data Sheet

DESIGN APPLICATION NOTE --- AN011 SXT-289 Balanced Amplifier Configuration

Top View (Near-side) Side View Bottom View (Far-side) .89±.08. 4x.280. Orientation Marker Orientation Marker.

Data Sheet. VMMK GHz Positive Gain Slope Low Noise Amplifier in SMT Package. Features. Description

Simulation and Design Analysis of Integrated Receiver System for Millimeter Wave Applications

Lowpass Filters. Microwave Filter Design. Chp5. Lowpass Filters. Prof. Tzong-Lin Wu. Department of Electrical Engineering National Taiwan University

Application Note 5468

Features. = +25 C, Vdd = 5V, Vgg1 = Vgg2 = Open

Features. Parameter Min Typ. Max Min Typ. Max Min Typ Max Units Frequency Range GHz Gain

CHX2090-QDG RoHS COMPLIANT

Features. Noise Figure db Supply Current (Idd) ma Supply Voltage (Vdd) V

HMC6590. transimpedance amplifiers - chip. 43 Gbps Transimpedance Amplifier. Typical Applications. Features. Functional Diagram. General Description

= 25 C) Parameter 0.5 GHz 1.0 GHz 2.5 GHz 4.0 GHz 6.0 GHz Units. Gain db. 23 dbm W

Antenna Theory and Design

= 25 C) Parameter 1.0 GHz 2.0 GHz 3.0 GHz 4.0 GHz 5.0 GHz 6.0 GHz Units. Gain db. 32 dbm W

LECTURE 6 BROAD-BAND AMPLIFIERS

Varactor Loaded Transmission Lines for Linear Applications

HMC913LC4B. SDLVAs - SMT. SUCCESSIVE DETECTION LOG VIDEO AMPLIFIER (SDLVA), GHz

Application Note 5295

Figure 1 Schematic diagram of a balanced amplifier using two quadrature hybrids (eg Lange Couplers).

Features. = +25 C, Vdd= +8V *

Optimization of Wafer Level Test Hardware using Signal Integrity Simulation

Application Note 5303

Surface Mount Package SOT-363 (SC-70) Pin Connections and Package Marking. OUTPUT and V d 5 GND 4 V CC

Top View (Near-side) Side View Bottom View (Far-side) ± ±.08. 4x.28. Orientation Marker Balanced port 1.

The GPO male interface is compliant to MIL-STD-348, and it is in accordance with MIL-PRF-39012a and DESC 94007/94008.

2005 Modelithics Inc.

Data Sheet. VMMK GHz Variable Gain Amplifier in SMT Package. Features. Description. Specifications (6 GHz, Vdd = 5 V, Zin = Zout = 50 Ω)

surface mount chip capacitor model

HMC650 TO HMC658 v

HMC998. Amplifiers - Linear & Power - Chip. GaAs phemt MMIC 2 WATT POWER AMPLIFIER, GHz. Electrical Specifications, T A.

Surface Mount SOT-363 (SC-70) Package. Pin Connections and Package Marking 4 V CC. Note: Package marking provides orientation and identification.

DC-12 GHz Tunable Passive Gain Equalizer

GaAs MMIC Power Amplifier

APPLICATION NOTE FOR PA.700A ANTENNA INTEGRATION

MMA C 30KHz-50GHz Traveling Wave Amplifier Data Sheet

Model BD4859L50100A00 Rev A

Outcomes: Core Competencies for ECE145A/218A

HMC994A AMPLIFIERS - LINEAR & POWER - CHIP. GaAs phemt MMIC 0.5 WATT POWER AMPLIFIER, DC - 30 GHz. Features. Typical Applications

FEATURES DESCRIPTION ABSOLUTE MAXIMUM RATINGS. T AMB = +25 C ( Unless otherwise specified )

HMC659LC5 LINEAR & POWER AMPLIFIERS - SMT. GaAs PHEMT MMIC POWER AMPLIFIER, DC - 15 GHz. Features. Typical Applications. General Description

Transcription:

Gain Slope issues in Microwave modules? Physical constraints for broadband operation If you are a microwave hardware engineer you most likely have had a few sobering experiences when you test your new design the first time, particularly wideband high frequency modules they almost never look like the model. Many of the bigger issues come down to physics. Broadband modules e.g. 2 to 18 GHz virtually always have gain roll-off at the high end of the band, from a combination of transistor and package parasitic L s & C s give rise to gain roll-off and VSWR mismatch losses, while interconnect transmission lines have increasing loss with frequency. To achieve good EW module signal fidelity over such frequency ranges requires thin dielectric interconnect substrates for: 1) Low ground via inductance for SMT amplifiers and RF components 2) 5 ohm line widths commensurate with SMT component signal pads 3) High isolation at high frequencies. Further, any components in the RF signal path should have a signal contact width that closely matches the 5 ohm line width to prevent reflections (VSWR) which degrade signal fidelity. Typical construction has transmission line widths in the.1 to.2 inch line widths to achieve 5 ohm characteristic impedance. A consequence of module measured performance deviating from model prediction is an in ability to pre-plan effectively to compensate for gain slope issues. Gain equalizers, the historical approach Historical implementation of gain equalizers utilized stacked combinations of a surface mount chip resistor with a surface mount chip capacitor. This results in a parallel R and C mounted across a gap in a microstrip line (i.e. connected in series on the transmission-line). By stacking the chips, the footprint on the circuit board is minimized to reduce VSWR reflection losses. Typical pick and place assembly and reflow methods want a pre-assembled stacked R C. Typical SMT chip termination materials make it difficult to pre-attach the Resistor and capacitor chips without the connection reflowing, and possibly dis-assembling during board attach. The stacked assembly is on a small scale, the line width constraints noted above means that the R& C chips need to be 21 or possibly as large as 42 case sizes for good VSWR performance across EW bandwidths. Enough mechanics, the more important electrical impact from implementing equalizers with standard chip R s and C s is the parasitic circuit elements of such parts. We are all conditioned to think of leadless SMT chips as being the closest we can get to ideal circuit elements for high frequencies; once again ideal is a relative term. For comparison, see the graph in figure 1 below comparing the frequency response of an ideal parallel R-C, versus a typical stacked chip implementation. Most of the effect is due to the series self-inductance of the chip capacitor which

becomes series resonant with the capacitor giving rise to a rapid change in slope and greater variation between equalizers of the same design. Ideal Elements vs. Stacked SMT Chips -.5-1 -1.5-2 -2.5-3 -3.5 Stacked RC Ideal RC 2 4 6 8 1 12 14 16 18 Frequency (GHz) Figure 1 A new breed of Gain Equalizer Dielectric Laboratories, Inc. (DLI) Gain Equalizers employ monolithic construction with precision thin film conductor and resistor films and proprietary high dielectric constant ceramics for superior RF performance repeatability. Integrated R and C values are realized to produce the desired gain slope. An EW series of equalizers add to the range of equalizers for applications ranging from 6 GHz to over 4 GHz. These are a small, low cost solution to your gain slope challenges. The EW series are.26 x.16 x.7 inches (smaller than 32 case size), with terminations compatible with standard SMT or conductive epoxy attachment. Figure 2 below illustrates typical measured performance from 5 MHz to 2 GHz, for the 6 parts in the series with slopes ranging from nominally 1dB to 3.5dB.

-.5-1 -1.5-2 -2.5-3 AEQ5467 AEQ5468 AEQ5469 AEQ547 AEQ5471 AEQ5472-3.5 5 1 15 2 Frequency (MHz) Figure 2 The performance shown is measured on a test coupon with a microstrip 5 ohm transmission line, with a trace width of.17 inches fabricated on.8 inch thick R43 circuit board. Note that the part width is a good match to a 5 ohm line width for optimal broadband performance. Each part in the series is footprint interchangeable, making these parts easily interchangeable to optimize module gain flatness. Engineering kits are offered which contain all 6 slope part types. Since no ground connection is required for DLI s gain equalizers, it is typically feasible to insert them into modules where no pre-planned provisions were made. In the case of a typical printed wire board all one needs is a steady hand and a utility knife to cut a nominal.1 inch gap in the transmission line, and then install the gain equalizer.

-5-1 -15-2 -25-3 -35-4 -45 AEQ5467 AEQ5468 AEQ5469 AEQ547 AEQ5471 AEQ5472 5 1 15 2 Frequency (MHz) Figure 3 Figure 3 compares simulated return loss for parts with different gain slope values. Parts with higher gain slopes have lower return loss values at low frequencies, for example a part with 3.5dB gain slope has approximately 9 db return loss at low frequencies, however the resistor s attenuation behaves similarly to a pad so that VSWR interaction between adjacent circuit components is reduced. When slope compensation needs are greater than an individual gain equalizer provides two other strategies should be considered; 1) use more than one equalizer and put an amplifier between them where the amplifier isolation will minimize the VSR interaction, 2) Utilize a length of 5 ohm transmission-line between the gain equalizers. Depending on the length of transmission line, the return loss can be improved considerably in addition the composite gain slope can be further tailored to module needs. Figure 4 illustrates the concept showing performance for a short length of transmission line ~.2 inches versus.25 inches between a pair of gain equalizers.

Figure 4 The gain equalizers are intended to be used in small signal applications, the limitation is principally thermal dissipation, a combination of very small part size and low thermal conductivity of printed wire board materials. The dissipated power will be greater for signals in the lower frequencies in contrast to the higher frequency end of the design range where the insertion loss reaches a typical value of.2 db. Typical dissipated power limit is 3 mw or greater for baseplate temperatures up to 8 C. Conclusion If you have gain slope issues in your microwave modules you should consider this product. DLI gain equalizers can outperform alternative solutions in an easy to use form with excellent RF repeatability. The EW designer kit provides DC to 2 GHz performance with slopes from 1 to 3.5dB with a common footprint to simplify your prototyping needs. January_214