C30807EH, C30808EH, C30822EH, C30809EH and C30810EH Types N-type Silicon PIN Photodetectors

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DATASHEET Photon Detection C30807EH, C30808EH, C30822EH, C30809EH and C308EH Types Key Features High responsivity Fast response time Low operating voltage Low capacitance Hermetically sealed packages RoHS Compliant Overview Applications Laser detection systems Photometry Data transmission Instrumentation High speed switching The family of N-type silicon PIN photodiodes is designed for use in a wide variety of broad band low light level applications covering the spectral range from below 400 to over 10 nanometers. The wide range of photosensitive areas making up this series provides a broad choice in photosensitive areas and in time response characteristics. All the photodiodes are hermetically sealed in TO packages, and is anti-reflection coated to enhance responsivity at 900nm. These characteristics make the devices highly useful in HeNe and GaAs laser detection systems and in optical demodulation, data transmission, ranging, and high-speed switching applications. Recognizing that different applications have different performance requirements, Excelitas offers a wide range of customizations of these photodiodes to meet your design challenges. Responsivity and noise screening, custom device testing and packaging are among many of the application specific solutions available. www.excelitas.com Page 1 of 9 C30807, 808, 822, 809, and 8EH Rev.18.04.02

Table 1 Mechanical and Optical Characteristics Parameter Symbol C30807EH C30808EH C30822EH C30809EH C308EH Unit Shape Circular Circular Circular Circular Circular Package TO-18 TO- TO-8 TO-8 TO-36 Photosensitive Surface: Useful area Useful diameter Field of View: Nominal field of view α (see Figure ) Nominal field of view α (see Figure ) A d 0.8 1 FoV 60 88 2. 87 9 94 142 0 8 6 147 0 11 77 138 mm 2 mm Degrees Table 2 Electro-Optical Characteristics Case Temperature T a = 22 C; at the DC reverse operating voltage V=4V, V op Parameter Symbol C30807EH C30808EH C30822EH Unit Min Typ Max Min Typ Max Min Typ Max Breakdown Voltage V br 0 0 0 V Operating Voltage V op 4 4 4 V Responsivity at 60 nm Quantum Efficiency at 60 nm Total Dark Current at Vop = V at V op = 4V Noise Current f=khz, Δf=1.0Hz R 0. Q.E. 70 I d 2 1 0 0. 70 30 2 10 0. 70 0 0 20 A/W i n 0.06 0.42 0.7 3 0.9 pa/ Hz Capacitance C d 2. 3 6 pf Noise Equivalent Power at 60 nm f 0kHz, f 1.0Hz Rise/Fall Time, R L = 0Ω: % to 90% points 90% to % points NEP 0.4 t r 3 t f 6 0.7 2.8 7 7 8 1.2 4.7 8 13 0.22 0.87 7 1. 6 1 % na pw/ Hz ns www.excelitas.com Page 2 of 9 C30807, 808, 822, 809, and 8EH Rev.18.04.02

Table 2 (continued) Electro-Optical Characteristics Case Temperature T a = 22 C; at the DC reverse operating voltage V=4V, V op Parameter Symbol C30809EH C308EH Unit Min Typ Max Min Typ Max Breakdown Voltage V br 0 0 V Operating Voltage V op 4 4 V Responsivity at 60 nm Quantum Efficiency at 60 nm Total Dark Current at Vop = V at V op = 4V Noise Current f=khz, Δf=1.0Hz R 0. Q.E. 70 I d 2 70 130 30 0. 70 300 400 100 A/W i n 1.1 0.3 2.1 pa/ Hz Capacitance C d 3 4 70 90 pf Noise Equivalent Power at 60 nm f 0kHz, f 1.0Hz Rise/Fall Time, R L = 0Ω: % to 90% points 90% to % points NEP 0.2 1.0 t r t f 1 1.6 8 1 0.4 2 3.6 16 30 % na pw/ Hz ns Table 3 Absolute Maximum Ratings, Limiting Values Parameter Symbol Minimum Maximum Unit Remarks/Conditions Reverse Bias Voltage 0 V Photocurrent Density : average value peak value Forward Current: average value peak value J p I F Storage Temperature T stg -60 0 C Operating Temperature T o -40 80 C ma/mm 2 Continuous operation, at T a = 22 C ma Continuous operation, at T a = 22 C (For 1 second duration, non-repetitive) Soldering 0 C seconds, leads only www.excelitas.com Page 3 of 9 C30807, 808, 822, 809, and 8EH Rev.18.04.02

Figure 1 Typical Spectral Responsivity Characteristics 0.7 Responsivity [A/W] 0. 0.4 0.3 0.2 0 300 400 00 600 700 800 900 00 10 Wavelength [nm] Figure 2 Typical Photodiode Capacitance as a function of Operating Voltage, V op, Capacitance, C d [pf] 00 0 C308 C30809 C30822 C30808 C30807 1 1 2 30 3 40 4 DC Reverse Operating Voltage, V op [V] www.excelitas.com Page 4 of 9 C30807, 808, 822, 809, and 8EH Rev.18.04.02

Figure 3 Typical Noise Current as a function of Frequency, T a =22 C, V op = 4V Noise Current, i n [pa/ Hz] 1 C308 C30809 C30822 C30808 C30807 0.01 0 00 000 Frequency [Hz] Figure 4 Typical Dark Current as a function of Ambient Temperature, V op = 4V 1.E+0 Dark Current, I d [na] 1.E+04 1.E+03 1.E+02 C308 C30809 C30822 C30808 C30807 1.E+01 1.E+00 0 Ambient Temperature [ C] www.excelitas.com Page of 9 C30807, 808, 822, 809, and 8EH Rev.18.04.02

Figure Approximate Field of View For incident radiation at angles αα/2, the photosensitive surface is totally illuminated. For incident radiation at angles > αα/2, but αα /2, the photosensitive surface is partially illuminated Figure 6 Package Dimension of C30807EH, mm (inches), for reference only. www.excelitas.com Page 6 of 9 C30807, 808, 822, 809, and 8EH Rev.18.04.02

Figure 7 Package Dimension of C30808EH, mm (inches), for reference Figure 8 Package Dimension of C30809EH, mm (inches), for reference only www.excelitas.com Page 7 of 9 C30807, 808, 822, 809, and 8EH Rev.18.04.02

Figure 9 Package Dimension of C30822EH, mm (inches), for reference only Figure Package Dimension of C308EH, mm (inches), for reference only www.excelitas.com Page 8 of 9 C30807, 808, 822, 809, and 8EH Rev.18.04.02

RoHS Compliance The C30807EH, C30808EH, C30822EH, C30809EH, and C308EH Type PIN Photodetectors are designed and built to be fully compliant with the European Union Directive 11/6/EU Restriction of the use of certain Hazardous Substances (RoHS) in Electrical and Electronic equipment. Warranty A standard -month warranty following shipment applies. Any warranty is null and void if the photodiode window has been opened. About Excelitas Technologies Excelitas Technologies is a global technology leader focused on delivering innovative, customized solutions to meet the lighting, detection and other high-performance technology needs of OEM customers. Excelitas has a long and rich history of serving our OEM customer base with optoelectronic sensors and modules for more than 4 years beginning with PerkinElmer, EG&G, and RCA. The constant throughout has been our innovation and commitment to delivering the highest quality solutions to our customers worldwide. From analytical instrumentation to clinical diagnostics, medical, industrial, safety and security, and aerospace and defense applications, Excelitas Technologies is committed to enabling our customers' success in their specialty endmarkets. Excelitas Technologies has approximately,000 employees in North America, Europe and Asia, serving customers across the world. Excelitas Technologies 201 Dumberry Road Vaudreuil-Dorion, Quebec Canada J7V 8P7 Telephone: (+1) 40 424 3300 Toll-free: (+1) 800 77 6786 Fax: (+1) 40 424 334 detection@excelitas.com Excelitas Technologies GmbH & Co. KG Wenzel-Jaksch-Str. 31 D-6199 Wiesbaden Germany Telephone: (+49) 611 492 430 Fax: (+49) 611 492 16 detection.europe@excelitas.com Excelitas Technologies Singapore, Pte. Ltd. 8 Tractor Road Singapore 627969 Telephone: (+6) 677 22 (Main number) Telephone: (+6) 6770 4366 (Customer Service) Fax: (+6) 6778-2 detection.asia@excelitas.com For a complete listing of our global offices, visit www.excelitas.com/locations Excelitas Technologies Corp. All rights reserved. The Excelitas logo and design are registered trademarks of Excelitas Technologies Corp. All other trademarks not owned by Excelitas Technologies or its subsidiaries that are depicted herein are the property of their respective owners. Excelitas reserves the right to change this document at any time without notice and disclaims liability for editorial, pictorial or typographical errors. www.excelitas.com Page 9 of 9 C30807, 808, 822, 809, and 8EH Rev.18.04.02