P-Channel -V (D-S) MOSFET with Schottky Diode Si3853DV PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A). at V GS = -.5 V ±.8 -.3 at V GS = -.5 V ±.3 FEATURES Halogen-free According to IEC 9-- Definition LITTLE FOOT Plus Compliant to RoHS Directive /95/EC SCHOTTKY PRODUCT SUMMARY V F (V) V KA (V) Diode Forward Voltage I F (A).8 V at.5 A.5 TSOP- Top View S K A K 3 mm S 5 N/C G G 3 D.85 mm Ordering Information: Si3853DV-T-E3 (Lead (Pb)-free) Si3853DV-T-GE3 (Lead (Pb)-free and Halogen-free) D P-Channel MOSFET A ABSOLUTE MAXIMUM RATINGS T A = 5 C, unless otherwise noted Parameter Symbol 5 s Steady State Unit Drain-Source Voltage (MOSFET and Schottky) V DS - Reverse Voltage (Schottky) V KA V Gate-Source Voltage (MOSFET) V GS ± ± Continuous Drain Current (T J = 5 C) (MOSFET) a T A = 5 C ±.8 ±. I D T A = 7 C ±.5 ±. Pulsed Drain Current (MOSFET) I DM ± 7 Continuous Source Current (MOSFET Diode Conduction) a I S -.5 -.75 A Average Forward Current (Schottky) I F.5 Pulsed Foward Current (Schottky) I FM 7 T Maximum Power Dissipation (MOSFET) a A = 5 C.5.83 T A = 7 C.73.53 P D W T A = 5 C..7 Maximum Power Dissipation (Schottky) a T A = 7 C..8 Operating Junction and Storage Temperature Range T J, T stg - 55 to 5 C a. Surface mounted on " x " FR board. Document Number: 7979 S9-7-Rev. B, -Nov-9
THERMAL RESISTANCE RATINGS Parameter Device Symbol Typical Maximum Unit Junction-to-Ambient a t 5 s MOSFET R thja 93 Schottky 3 5 Steady State MOSFET 3 5 Schottky 5 C/W Junction-to-Foot a. Surface mounted on " x " FR board. Steady State MOSFET R thjf 75 9 MOSFET 8 95 MOSFET SPECIFICATIONS T J = 5 C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Gate Threshold Voltage V GS(th) V DS = V GS, I D = - 5 µa -.5 V Gate-Body Leakage I GSS V DS = V, V GS = ± V ± na V DS = - V, V GS = V - Zero Gate Voltage Drain Current I DSS V DS = - V, V GS = V, T J = 75 C - µa On-State Drain Current a I D(on) V DS - 5 V, V GS = -.5 V - 5 A Drain-Source On-State Resistance a V GS = -.5 V, I D = -.8 A. R DS(on) V GS = -.5 V, I D = -. A.8.3 Ω Forward Transconductance a g fs V DS = - 5 V, I D = -.8 A 3. S Diode Forward Voltage a V SD I S = -.5 V, V GS = V -.83 -. V Dynamic b Total Gate Charge Q g.7. Gate-Source Charge Q gs V DS = - V, V GS = -.5 V, I D = -.8 A. nc Gate-Drain Charge Q gd. Turn-On Delay Time t d(on) 7 Rise Time t r V DD = - V, R L = Ω 3 5 Turn-Off DelayTime t d(off) I D - A, V GEN = -.5 V, R g = Ω 9 3 ns Fall Time t f 3 Body Diode Reverse Recovery Time t rr I F = -.5 A, di/dt = A/µs a. Pulse test; pulse width 3 µs, duty cycle %. b. Guaranteed by design, not subject to production testing. SCHOTTKY SPECIFICATIONS T J = 5 C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit I F =.5 A..8 Forward Voltage Drop V F V I F =.5 A, T J = 5 C.33. Maximum Reverse Leakage Current I rm V R = V, T J = 75 C. ma V R = V. V R = V, T J = 5 C.5 Junction Capacitance C T V R = V 3 pf Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 7979 S9-7-Rev. B, -Nov-9
MOSFET TYPICAL CHARACTERISTICS T A = 5 C, unless otherwise noted 8 I D - Drain Current (A) 8 V GS =.5 V thru V 3.5 V 3 V.5 V V I D - Drain Current (A) T C = - 55 C 5 C 5 C.5 V 3 5 V DS - Drain-to-Source Voltage (V) Output Characteristics..5..5..5 3. 3.5. V GS - Gate-to-Source Voltage (V) Transfer Characteristics 5 - On-Resistance (Ω) R DS(on).5..3. V GS =.5 V V GS = 3. V V GS =.5 V C - Capacitance (pf) 3 7 8 9 C oss C iss 3 5 7 I D - Drain Current (A) On-Resistance vs. Drain Current.5 C rss 8 V DS - Drain-to-Source Voltage (V) Capacitance.8 - Gate-to-Source Voltage (V) 3..7.8 V DS = V I D =.8 A R DS(on) - On-Resistance (Normalized).....8 V GS = V I D =.8 A V GS.9....8. 3. Q g - Total Gate Charge (nc) Gate Charge. - 5-5 5 5 75 5 5 T J - Junction Temperature ( C) On-Resistance vs. Junction Temperature Document Number: 7979 S9-7-Rev. B, -Nov-9 3
MOSFET TYPICAL CHARACTERISTICS T A = 5 C, unless otherwise noted..5 I D =.8 A I S - Source Current (A) T J = 5 C T J = 5 C - On-Resistance (Ω) R DS(on)..3. I D =. A.3..9..5 3 5 V SD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage V GS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage. 8. I D = 5 µa Variance (V) V GS(th).. Power (W) -. -. - 5-5 5 5 75 5 5 T J - Temperature ( C) Threshold Voltage. 3 Time (s) Power, Junction-to-Ambient. - Duty Cycle =.5..5. -3 - - P DM Normalized Thermal Transient Impedance, Junction-to-Ambient t t t. Duty Cycle, D = t. Per Unit Base = R thja = 3 C/W 3. T JM - T A = P DM Z (t) thja. Surface Mounted Document Number: 7979 S9-7-Rev. B, -Nov-9
MOSFET TYPICAL CHARACTERISTICS T A = 5 C, unless otherwise noted Duty Cycle =.5..5.. - -3 - - Normalized Thermal Transient Impedance, Junction-to-Foot SCHOTTKY TYPICAL CHARACTERISTICS T A = 5 C, unless otherwise noted 5 I R - Reverse Current (ma). V V - Forward Current (A) I F T J = 5 C T J = 5 C.. 5 5 75 5 5 T J - Junction Temperature ( C) Reverse Current vs. Junction Temperature....8. V F - Forward Voltage Drop (V) Forward Voltage Drop 5 - Junction Capacitance (pf) C T 9 3 8 V KA - Reverse Voltage (V) Capacitance Document Number: 7979 S9-7-Rev. B, -Nov-9 5
SCHOTTKY TYPICAL CHARACTERISTICS T A = 5 C, unless otherwise noted. - Duty Cycle =.5..5. -3 - - Normalized Thermal Transient Impedance, Junction-to-Ambient P DM t t t. Duty Cycle, D = t. Per Unit Base = R thja = C/W 3. T JM - T A = P DM Z (t) thja. Surface Mounted Duty Cycle =.5..5.. - -3 - Normalized Thermal Transient Impedance, Junction-to-Foot - maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see /ppg?7979. Document Number: 7979 S9-7-Rev. B, -Nov-9
Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. 7 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 8-Feb-7 Document Number: 9