CMOS/LVCMOS HF VCXO AE-X32BXX-X Series

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CMOS/LVCMOS HF VCXO Description The AE-X32BXX Series of voltage controlled crystal oscillators (VCXO) provides high frequency with CMOS/LVCMOS output. The device does not use any frequency multiplication, providing exceptionally low Phase Noise and Jitter. It s packaged in a miniature, FR-4 based 17x14 mm SMD package. Applications and Features Frequency Synthesizers, Exceptionally Low Phase Noise Reference High Reliability NEL HALT/HASS qualified for crystal oscillator start-up conditions Extremely Low Phase Noise and Jitter No Multiplication Absolute Pull Range (APR) to ± 1,000 ppm SONET ± 20 ppm overall free-run stability available High Shock Resistance, to 1000g COTS/Dual use Creating a Part Number AE - X 32B X X - X - FREQ Package code AE 8 pad 17x14 mm SMD Operating Voltage 0 5.0 V ± 5% A - 3.3 V ± 5% B 2.5 V ± 5% Temperature Range, ºC A 0 to 50 B - 0 to 70 C - -20 to 70 D - -40 to 85 9 customer specific Environmental L Contains a level of lead that is in excess of RoHS directive and is not designed for reflow R RoHS compliant Absolute Pull Range, ppm E ±20 F ±32 G ±50 H ±100 9 Customer specific

CRYSTAL OSCILLATORS Drawing Specification OUTLINE TOLERANCE: ±0.015 / 0.4mm (Unless otherwise specified) PIN FUNCTIONS: [1] Vcc [2] [3] [4] [7] - GND [5] OUTPUT [6] N/C [8] Vc MARKING (EXAMPLE): AE-XXXX Absolute Maximum Ratings Parameter Symbol Value Unit Operating Temperature Range To -40 to +85 ºC Storage Temperature Range Tst -50 to +90 ºC Supply Voltage Vcc -0.5 to 5.5 V Control Voltage Vc -0.5 to 5.5 V

Electrical Parameters (1) Parameter Symb Conditions, Note MIN TYP MAX Unit Nominal Frequency Fo 12 250 MHz Supply Voltage Vcc Code 0 Code A Code B 4.75 3.135 2.375 5.0 3.3 2.5 5.25 3.465 2.625 V Supply current Icc No load, Vcc = 3.3 V 40 MHz 80 ma Output Logic Type CMOS Load 15 pf/10 KOhm Ohm Output Levels Voh overall 0.9Vcc V Vol 0.1 Vcc Duty Cycle (Symmetry) At 50% Vcc 45/55 50/50 55/45 % Rise/Fall Time Tr/Tf 0.2Vcc to 0.8 Vcc; F< 70 MHz 70 MHz<F< 125 MHz 125MHz<F<250MHz 3 2 1.5 5 3 2.5 ns Jitter Integrated, RMS J Integrated from Phase Noise, 12 KHz to 20 MHz, RMS 0.1 0.15 ps 100Hz to 80KHz,RMS 0.8 ps 50 KHz to 80 MHz 0.2 ps Wavecrest Random 2.5 ps characterized period, Accumul. 17 ps, pk-to-pk Determin. 0 ps Sub-harmonics None dbc Phase Noise (Δf) 125 MHz, @ 10 Hz -80-75 dbc/hz 3.3 V @100 Hz -110-105 APR 50 @1 KHz -140-135 ppm or @10KHz -168-166 less @100KHz -171-169 Frequency Stability, usually not specified unless necessary, APR is specified to incorporate stability ΔF/F @>1MHz Overall, including, temperature, aging 10 years, shock and vibration @Vc=Vcc/2; APR 50 ppm, or less -172-170 ±20 ±30 ppm Control Voltage Range Vc 0V Vcc V Setability Vcs Vc to set the F at Fo; T, Vcc, load nominal, as shipped 0.4 Vcc 0.5 Vcc 0.6 Vcc V Absolute Pull Range APR Over all conditions, see part # creation 10, 20, 32, 50, 100 Input impedance Zin @ Fmod < 100 KHz 50 KOhm Modulation Bandwidth At Vc = Vcc/2, -3dB 20 KHz Note 1. All parameters, unless otherwise specified, are at nominal conditions, ie: T=25 C, Nominal Vcc & Nominal Load. ppm

CRYSTAL OSCILLATORS Typical Phase Noise at 100 MHz

Environmental and Mechanical Characteristics Operating temp. range Mechanical Shock Thermal Shock Vibration Hermetic Seal Soldering conditions see part # table Per MIL-STD-202, Method 213, Cond. A Per MIL-STD-883, Method 1011, Cond. A Per MIL-STD-883, Method 2007, Cond. A Leak rate less than 5x10-8 atm.cc/s of helium, crystal only. See MAX reflow profile below; The device may be reflowed once. Reflowing upside down is not allowed. NO CLEAN assembly is recommended. MAX Reflow Profile The device may be reflowed once. Reflowing upside down is not allowed. NO CLEAN assembly is recommended.