Maintenance/ Discontinued

Similar documents
Maintenance/ Discontinued

Maintenance/ Discontinued

Maintenance/ Discontinued

DATA SHEET. Part No. AN17821A

Maintenance/ Discontinued

Maintenance/ Discontinued

Maintenance/ Discontinued

Maintenance/ Discontinued

Maintenance/ Discontinued

Maintenance/ Discontinued

Maintenance/ Discontinued

Maintenance/ Discontinued

Maintenance/ Discontinued

Maintenance/ Discontinued

Maintenance/ Discontinued

Maintenance/ Discontinued

LNJ757W86RA. High Bright Surface Mounting Chip LED. ESS Type. Absolute Maximum Ratings T a = 25 C. Lighting Color

Maintenance/ Discontinued

Maintenance/ Discontinued

Maintenance/ Discontinued

Maintenance/ Discontinued

Discontinued AN W 2 (18 V, 8 Ω) Power Amplifier with Mute Function and Volume Control

Maintenance/ Discontinued

Maintenance/ Discontinued

Maintenance/ Discontinued

Maintenance/ Discontinued

Maintenance/ Discontinued

Maintenance/ Discontinued

Maintenance/ Discontinued

Maintenance/ Discontinued

Maintenance/ Discontinued

DATA SHEET. Part No. AN44075A

Maintenance/ Discontinued

DMG Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm. For general amplification.

Maintenance/ Discontinued

Maintenance/ Discontinued

Maintenance/ Discontinued

Maintenance/ Discontinued

FK Silicon N-channel MOS FET. For switching circuits. Overview. Package. Features. Marking Symbol: CV. Packaging

Maintenance/ Discontinued

DMG Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For digital circuits DMG26401 in SMini6 type package

I F = I R = 100 ma, I rr = 0.1 I R, Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.

BAS16 Silicon epitaxial planar type

Maintenance/ Discontinued

DMG Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For general amplification DMG20401 in SMini6 type package

DMG Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm. For general amplification.

DMC904F0. Silicon NPN epitaxial planar type. For high frequency amplification. Features. Marking Symbol: D3. Basic Part Number.

Maintenance/ Discontinued

DME20B01. Silicon PNP epitaxial planar type (Tr1) Silicon NPN epitaxial planar type (Tr2) For general amplification. Features. Marking Symbol: A3

Maintenance/ Discontinued

Maintenance/ Discontinued

Maintenance/ Discontinued

DA3J101F0L DA3J101F0L. Silicon epitaxial planar type. Doc No. TT4-EA Revision. 3

DA2J10100L DA2J10100L. Silicon epitaxial planar type. Doc No. TT4-EA Revision. 3. For high speed switching circuits. Internal Connection

Maintenance/ Discontinued

Maintenance/ Discontinued

DA4X106U0R Silicon epitaxial planar type

DA6X106U0R Silicon epitaxial planar type

Maintenance/ Discontinued

BAS16 Silicon epitaxial planar type

Maintenance/ Discontinued

DA6X102S0R Silicon epitaxial planar type

DB2J50100L DB2J50100L. Silicon epitaxial planar type. Doc No. TT4-EA Revision. 2. For high speed switching circuits. Internal Connection

Maintenance/ Discontinued

Maintenance/ Discontinued

Maintenance/ Discontinued

DA2S00100L DA2S00100L. Silicon epitaxial planar type. Doc No. TT4-EA Revision. 3. For band switching. Internal Connection

Maintenance/ Discontinued

Maintenance/ Discontinued

Maintenance/ Discontinued

DB4X501K0R Silicon epitaxial planar type

130 Reverse current IR VR = 1 V. 20 A Temperature coefficient of zener voltage *3 SZ IZ = 5 ma mv/ C Note) 1.

DA2J10400L DA2J10400L. Silicon epitaxial planar type. Doc No. TT4-EA Revision. 3. For high speed switching circuits. Internal Connection

XN04312 (XN4312) Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Composite Transistors. For switching/digital circuits

DA22F2100L DA22F2100L. Silicon epitaxial planar type. Doc No. TT4-EA Revision. 3. For high speed switching circuits. Internal Connection

DSA7101. Silicon PNP epitaxial planar type. For low frequency amplification Complementary to DSC7101. Features. Marking Symbol: 4C.

Maintenance/ Discontinued

Maintenance/ Discontinued

Maintenance/ Discontinued

Maintenance/ Discontinued

DB L DB L. Silicon epitaxial planar type. Doc No. TT4-EA Revision. 2. For rectification. Internal Connection

Maintenance/ Discontinued

Maintenance/ Discontinued

MTM232232LBF Silicon N-channel MOSFET

Maintenance/ Discontinued

MTM761110LBF MTM761110LBF. Silicon P-channel MOSFET. for Switching. Internal Connection. Pin name

MTM232270LBF Silicon N-channel MOSFET

DB2W31800L DB2W31800L. Silicon epitaxial planar type. Doc No. TT4-EA Revision. 4. For rectification. Internal Connection

MTM861270LBF MTM861270LBF. Silicon P-channel MOSFET. Doc No. TT4-EA Revision. 4. For Switching. Internal Connection.

FK330309EL FK330309EL. Silicon N-channel MOSFET For switching circuits. Doc No. TT4-EA Revision. 2. Internal Connection.

1.0 V Zener voltage *1, *2 VZ IZ = 5 ma Zener operating resistance RZ IZ = 5 ma. 40 Zener rise operating resistance RZK IZ = 0.

DB2J41100L DB2J41100L. Silicon epitaxial planar type. Doc No. TT4-EA Revision. 2. For rectification. Internal Connection

DATA SHEET AN5832SA. Part No. SEMICONDUCTOR COMPANY MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

MTM761100LBF MTM761100LBF. Silicon P-channel MOSFET For Switching. Doc No. TT4-EA Revision. 2. Internal Connection. Pin Name

DB L DB L. Silicon epitaxial planar type. Doc No. TT4-EA Revision. 2. For rectification. Internal Connection

FK L FK L. Silicon N-channel MOSFET. Doc No. TT4-EA Revision. 4. For switching FK in SMini3 type package

UNA0216 (UN216) Silicon PNP epitaxial planar type (3 elements) Silicon NPN epitaxial planar type (3 elements) Small Signal Transistor Arrays

FK L Silicon N-channel MOS FET

FK6K02010L FK6K02010L. Silicon N-channel MOS FET. Doc No. TT4-EA Revision. 2. For switching. Internal Connection. Pin Name

MTM861280LBF MTM861280LBF. Silicon P-channel MOSFET. Doc No. TT4-EA Revision. 2. For Switching. Internal Connection.

Transcription:

DATA SHEET Part No. Package Code No. AN781NSP SP-SUA Publication date: October 008 1

Contents Overview. Features.. Applications Package. Type.... Block Diagram.... 4 Pin Descriptions. 5 Absolute Maximum Ratings. 6 Electrical Characteristics. 7 Electrical Characteristics (Reference values for design). 8 Technical Data.. 9

AN781NSP -pin positive output voltage regulator (1 A type) Overview The AN78xxNSP series is a -pin fixed positive output type monolithic voltage regulator housed in surface mounting package. Stabilized fixed output voltage is obtained from unstable DC input voltage with using minimum external components. 9 types of fixed output voltage are available; 5 V, 6 V, 7 V, 8 V, 9 V, 10 V, 1 V, 15 V and 18 V. They can be used widely in power circuits with current capacity up to 1 A. The AN781NSP is the 1 V output voltage type in these series. Features Built-in overcurrent limit circuit Built-in thermal overload protection circuit Built-in ASO (area of safe operation) protection circuit Applications -pin positive output voltage regulator (1 A type) Package -pin Plastic Surface Mount Power Package (SP type) Type Silicon monolithic bipolar IC

Block Diagram Input Starter Voltage Reference C IN 0. μf C OUT 0.1 μf Pass Tr Current Source Error Amp. Thermal Protection Current Limiter 1 C IN + FIN C OUT R R 1 R SC Output 4

Pin Descriptions Pin No. Pin name Type Description 1 Input Input Input voltage GND Ground Ground (FIN) Output Output Output voltage 5

Absolute Maximum Ratings No. Parameter Symbol Rating Unit Note 1 4 5 Note) Supply voltage Supply current Power dissipation Operating ambient temperature Storage temperature V CC I CC P D T opr T stg 5 0 to +85 55 to +150 : The power dissipation shown is the value at T a = 85 C. When using this IC, refer to the P D -T a diagram in the Technical Data and use under the condition not exceeding the allowable value. When T j exceeds 150 C, the internal circuit cuts off the output. *: Except for the power dissipation, operating ambient temperature, and storage temperature, all ratings are for T a = 5 C. 64.9 V mw C C * * 6

Electrical Characteristics Note) Unless otherwise specified, T a = 5 C± C, V IN = 19 V, I OUT = 500, C IN = 0. μf and C OUT = 0.1 μf No. 1 4 5 6 7 8 Output voltage Line regulation Load regulation Bias current Parameter V IN = 15 V to 7 V, Output voltage tolerance V OUT I OUT = 5 to 1 000, 11.4 Bias current fluctuation to input Bias current fluctuation to load Ripple rejection ratio Symbol V OUT1 REG IN1 REG IN REG L1 REG L I Bias ΔI Bias(IN) ΔI Bias(L) RR V IN = 16 V to V, I OUT = 5 to 1 500, I OUT = 50 to 750, Conditions V IN = 14.5 V to 0 V, V IN = 14.5 V to 0 V, I OUT = 5 to 1 000, V IN = 15 V to 5 V, I OUT = 100, f = 10 Hz Note) : The specified condition T j = 5 C means that the test should be carried out within so short a test time (within 10ms) that the characteristic value drift due to the chip junction temperature rise can be ignored. Min 11.5 55 Limits Typ 1.0 10 1 4.0 4.0 Max 1.5 1.6 40 10 40 10 8 1.0 0.5 Unit V V mv mv db Note 7

Electrical Characteristics (Reference values for design) Note) Unless otherwise specified, T a = 5 C± C, V IN = 19 V, I OUT = 500, C IN = 0. μf and C OUT = 0.1 μf The characteristics listed below are reference values for design of the IC and are not guaranteed by inspection. If a problem does occur related to these characteristics, Panasonic will respond in good faith to user concerns. No. 1 4 5 6 Parameter Output noise voltage Minimum input/output voltage difference Output short-circuit current Peak output current Output voltage temperature coefficient Thermal protection operating Temperature Symbol Vno V DIF(min) I O(Short) I O(Peak) ΔV OUT Ta T j(th) I OUT = 5, T j = 0 C to 15 C I OUT = 5 Conditions f = 10 Hz to 100 khz I OUT = 1 000, V IN = 5 V, Reference values 75 700 000 0.8 150 μv V mv/ C Note) : The specified condition T j = 5 C means that the test should be carried out within so short a test time (within 10ms) that the characteristic value drift due to the chip junction temperature rise can be ignored. Min Typ Max Unit C Note 8

Technical Data P D T a diagram 9

0080805 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. () The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. () The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. Any applications other than the standard applications intended. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company.