SCH28KE Nchannel SiC power MOSFET copackaged with SiCSBD Features V DSS R DS(on) (Typ.) I D P D ) Low onresistance 2V 8mW 4A 262W Outline TO247 Inner circuit 2) Fast switching speed 3) Fast reverse recovery 4) Low V SD 5) Easy to parallel 6) Simple to drive 7) Pbfree lead plating ; RoHS compliant Packaging specifications Packing () Gate (2) Drain (3) Source * Body Diode *2 SBD Tube Application Solar inverters DC/DC converters Induction heating Motor drives Type Reel size (mm) Tape width (mm) Basic ordering unit (pcs) 3 Packing code C Marking SCH28KE Absolute maximum ratings (T a = 25 C) Parameter Symbol Value Unit Drain Source voltage V DSS 2 V Continuous drain current T c = 25 C T c = C * I D * I D 4 28 A A drain current I D,pulse *2 8 A Gate Source voltage (DC) Gate Source surge voltage (T surge 3nsec) Power dissipation (T c = 25 C) V GSS V GSSsurge *3 P D 6 to 22 V to 26 V 262 W Junction temperature T j 75 C Range of storage temperature T stg 55 to +75 C 25 ROHM Co., Ltd. All rights reserved. /3 25. Rev.F
SCH28KE Thermal resistance Parameter Symbol Min. Values Typ. Max. Unit Thermal resistance, junction case R thjc.44.57 C/W Thermal resistance, junction ambient R thja 5 C/W Soldering temperature, wavesoldering for s T sold 265 C Electrical characteristics (T a = 25 C) Parameter Symbol Conditions Min. Values Typ. Max. Unit Drain Source breakdown voltage V (BR)DSS V GS = V, I D = ma 2 V Zero gate voltage drain current V DS = 2V, V GS = V I DSS T j = 25 C T j = 5 C 2 7 4 A Gate Source leakage current I GSS+ V GS = +22V, V DS = V na Gate Source leakage current I GSS V GS = 6V, V DS = V na Gate threshold voltage V GS (th) V DS = V GS, I D = 4.4mA.6 2.8 4. V * Limited only by maximum temperature allowed. *2 PW s, Duty cycle % *3 Example of acceptable Vgs waveform 25 ROHM Co., Ltd. All rights reserved. 2/3 25. Rev.F
SCH28KE Electrical characteristics (T a = 25 C) Parameter Symbol Conditions Min. Values Typ. Max. Unit Static drain source on state resistance R DS(on) V GS = 8V, I D = A T j = 25 C 8 7 T j = 25 C 25 mw Gate input resistance R G f = MHz, open drain 6.3 W Transconductance g fs V DS = V, I D = A 3.7 S Input capacitance C iss V GS = V 85 Output capacitance C oss V DS = 8V 75 pf Reverse transfer capacitance C rss f = MHz 2 Turn on delay time t d(on) V DD = 4V, V GS = 8V 37 Rise time t r Turn off delay time t d(off) I D = A R L = 4W 33 7 ns Fall time R G = W t f 28 V DD = 6V, I D =A Turn on switching loss E on V GS = 8V/V R G = W, L=5 H *E Turn off switching loss E on includes diode off reverse recovery 28 64 J Gate Charge characteristics (T a = 25 C) Parameter Symbol Conditions Min. Values Typ. Max. Unit Total gate charge Q g V DD = 4V 6 Gate Source charge Q gs I D = A 27 nc Gate Drain charge Q gd V GS = 8V 3 Gate plateau voltage V (plateau) V DD = 4V, I D = A 9.7 V 25 ROHM Co., Ltd. All rights reserved. 3/3 25. Rev.F
SCH28KE Internal diode electrical characteristics (SourceDrain) (T a = 25 C) Parameter Symbol Conditions Min. Values Typ. Max. Unit Inverse diode continuous, forward current Inverse diode direct current, pulsed I S * I SM *2 T c = 25 C 4 8 A A Forward voltage V SD V GS = V, I S = A.3 V Reverse recovery time Reverse recovery charge Peak reverse recovery current t rr Q rr I rrm I F = A, V R = 4V di/dt = 5A/ s 37 ns 6 nc 2.4 A Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit R th.78 C th.5 R th2.97 K/W C th2.8 Ws/K R th3.62 C th3.249 25 ROHM Co., Ltd. All rights reserved. 4/3 25. Rev.F
SCH28KE Electrical characteristic curves Fig. Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area 3 25 P W = us Power Dissipation : P D [W] 2 5 5 5 5 2 Operation in this area is limited by R DS(ON) Single Pulse P W = ms P W = ms P W = ms.. Junction Temperature : Tj [ C] Drain Source Voltage : V DS [V] Transient Thermal Resistance : R th [K/W] Fig.3 Typical Transient Thermal Resistance vs. Pulse Width.. Single..... Pulse Width : PW [s] 25 ROHM Co., Ltd. All rights reserved. 5/3 25. Rev.F
SCH28KE Electrical characteristic curves Fig.4 Typical Output Characteristics(I) Fig.5 Typical Output Characteristics(II) 4 35 3 25 2 5 5 V GS = 2V V GS = 8V V GS = 6V V GS = 4V V GS = 2V V GS = V 2 4 6 8 2 8 6 4 2 8 6 4 2 V GS = 2V V GS = 8V V GS = 6V V GS = 4V V GS = V V GS = 2V 2 3 4 5 Drain Source Voltage : V DS [V] Drain Source Voltage : V DS [V] Fig.6 Typical Output Characteristics(I) Fig.7 Typical Output Characteristics(II) 4 35 3 25 2 5 5 V GS = 4V V GS = 8V V GS = 6V V GS = 2V V GS = 2V V GS = V T a = 5ºC 2 4 6 8 2 8 6 4 2 8 6 4 2 V GS = 2V V GS = 8V V GS = 6V V GS = 4V V GS = 2V V GS = V T a = 5ºC 2 3 4 5 Drain Source Voltage : V DS [V] Drain Source Voltage : V DS [V] 25 ROHM Co., Ltd. All rights reserved. 6/3 25. Rev.F
SCH28KE Electrical characteristic curves Fig.8 Typical Transfer Characteristics Fig.9 Typical Transfer Characteristics (II) 4 V DS = V 35 V DS = V 3. T a = 5ºC T a = 75ºC 25 2 5 T a = 5ºC T a = 75ºC 5. 2 4 6 8 2 4 6 8 2 2 4 6 8 2 4 6 8 2 Gate Source Voltage : V GS [V] Gate Source Voltage : V GS [V] Gate Threshold Voltage : V GS(th) [V] 4.5 3.5 2.5.5.5 Fig. Gate Threshold Voltage vs. Junction Temperature 5 4 3 2 V DS = V I D = ma 5 5 5 Transconductance : g fs [S]. Fig. Transconductance vs. Drain Current V DS = V T a = 5ºC T a = 75ºC... Junction Temperature : T j [ C] 25 ROHM Co., Ltd. All rights reserved. 7/3 25. Rev.F
SCH28KE Electrical characteristic curves Static Drain Source OnState Resistance : R DS(on) [Ω] Fig.2 Static Drain Source On State Resistance vs. Gate Source Voltage.8.6.4.2 I D = A I D = 2A 6 8 2 4 6 8 2 22 Gate Source Voltage : V GS [V] Static Drain Source OnState Resistance : R DS(on) [Ω] Fig.3 Static Drain Source On State Resistance vs. Junction Temperature.5..5 V GS = 8V I D = 2A I D = A 5 5 5 Junction Temperature : T j [ºC] Static Drain Source OnState Resistance : R DS(on) [Ω] Fig.4 Static Drain Source On State Resistance vs. Drain Current. V GS = 8V.. T a = 5ºC T a = 75ºC 25 ROHM Co., Ltd. All rights reserved. 8/3 25. Rev.F
SCH28KE Electrical characteristic curves Capacitance : C [pf] Fig.5 Typical Capacitance vs. Drain Source Voltage f = MHz V GS = V C rss C oss C iss. Drain Source Voltage : V DS [V] Coss Stored Energy : E OSS [uj] Fig.6 Coss Stored Energy 6 5 4 3 2 2 4 6 8 Drain Source Voltage : V DS [V] Fig.7 Switching Characteristics Fig.8 Dynamic Input Characteristics 2 Switching Time : t [ns] t d(off) t r t d(on) t f V DD = 4V V GS = 8V R G = Ω Gate Source Voltage : V GS [V] 5 5 V DD = 4V I D = A.. 2 4 6 8 2 Total Gate Charge : Q g [nc] 25 ROHM Co., Ltd. All rights reserved. 9/3 25. Rev.F
SCH28KE Electrical characteristic curves Switching Energy : E [ J] 4 35 3 25 2 5 Fig.9 Typical Switching Loss vs. Drain Source Voltage 5 I D =A V GS = 8V/V R G =W L=5 H E on E off 2 4 6 8 Drain Source Voltage : V DS [V] Switching Energy : E [ J] 2 9 8 7 6 5 4 3 2 Fig.2 Typical Switching Loss vs. Drain Current V DD =6V V GS = 8V/V R G =W L=5 H E on E off 5 5 2 25 3 35 Drain Current : I D [A] Switching Energy : E [ J] 6 55 5 45 4 35 3 25 2 5 5 Fig.2 Typical Switching Loss vs. External Gate Resistance V DD =6V I D =A V GS = 8V/V L=5 H E on E off 5 5 2 25 3 External Gate Resistance : R G [W] 25 ROHM Co., Ltd. All rights reserved. /3 25. Rev.F
SCH28KE Electrical characteristic curves Inverse Diode Forward Current : I S [A] Fig.22 Inverse Diode Forward Current vs. Source Drain Voltage.. V GS = V T a = 25ºC T a = 75ºC.5.5 2 Source Drain Voltage : V SD [V] Reverse Recovery Time : t rr [ns] Fig.23 Reverse Recovery Time vs.inverse Diode Forward Current di / dt = 5A / us V R = 4V V GS = V Inverse Diode Forward Current : I S [A] 25 ROHM Co., Ltd. All rights reserved. /3 25. Rev.F
SCH28KE Measurement circuits Fig. Switching Time Measurement Circuit Fig.2 Switching Waveforms Fig.2 Gate Charge Measurement Circuit Fig.22 Gate Charge Waveform Fig.3 Switching Energy Measurement Circuit Fig.32 Switching Waveforms E on = I D V DS E off = I D V DS Same type device as D.U.T. V DS I rr V surge D.U.T. I D I D Fig.4 Reverse Recovery Time Measurement Circuit Fig.42 Reverse Recovery Waveform 25 ROHM Co., Ltd. All rights reserved. 2/3 25. Rev.F
SCH28KE Dimensions (Unit : mm) TO247 25 ROHM Co., Ltd. All rights reserved. 3/3 25. Rev.F
Notice Notes ) 2) 3) 4) 5) 6) 7) 8) 9) ) ) 2) 3) The information contained herein is subject to change without notice. Before you use our Products, please contact our sales representative and verify the latest specifications : Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and failsafe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. The Products specified in this document are not designed to be radiation tolerant. For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems. Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. ROHM shall have no responsibility for any damages or injury arising from noncompliance with the recommended usage conditions and specifications contained herein. ROHM has used reasonable care to ensur the accuracy of the information contained in this document. However, ROHM does not warrants that such information is errorfree, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting noncompliance with any applicable laws or regulations. When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http:///contact/ 25 ROHM Co., Ltd. All rights reserved. R2B
Datasheet SCH28KE Web Page Distribution Inventory Part Number SCH28KE Package TO247 Unit Quantity 36 Minimum Package Quantity 3 Packing Type Tube Constitution Materials List inquiry RoHS Yes