TVS Diode Transient Voltage Suppressor Diodes ESD203-B1-02 Series Bi-directional ESD / Transient / Surge Protection Diodes ESD203-B1-02ELS ESD203-B1-02EL Data Sheet Revision 1.3, 2013-12-19 Final Power Management & Multimarket
Revision History: Rev. 1.2,, 2013-11-26 Page or Item Subjects (major changes since previous revision) Revision 1.3, 2013-12-19 5 Update of Table 2-2) Trademarks of Infineon Technologies AG AURIX, BlueMoon, C166, CanPAK, CIPOS, CIPURSE, COMNEON, EconoPACK, CoolMOS, CoolSET, CORECONTROL, CROSSAVE, DAVE, EasyPIM, EconoBRIDGE, EconoDUAL, EconoPIM, EiceDRIVER, eupec, FCOS, HITFET, HybridPACK, I²RF, ISOFACE, IsoPACK, MIPAQ, ModSTACK, my-d, NovalithIC, OmniTune, OptiMOS, ORIGA, PRIMARION, PrimePACK, PrimeSTACK, PRO-SIL, PROFET, RASIC, ReverSave, SatRIC, SIEGET, SINDRION, SIPMOS, SMARTi, SmartLEWIS, SOLID FLASH, TEMPFET, thinq!, TRENCHSTOP, TriCore, X-GOLD, X-PMU, XMM, XPOSYS. Other Trademarks Advance Design System (ADS) of Agilent Technologies, AMBA, ARM, MULTI-ICE, KEIL, PRIMECELL, REALVIEW, THUMB, µvision of ARM Limited, UK. AUTOSAR is licensed by AUTOSAR development partnership. Bluetooth of Bluetooth SIG Inc. CAT-iq of DECT Forum. COLOSSUS, FirstGPS of Trimble Navigation Ltd. EMV of EMVCo, LLC (Visa Holdings Inc.). EPCOS of Epcos AG. FLEXGO of Microsoft Corporation. FlexRay is licensed by FlexRay Consortium. HYPERTERMINAL of Hilgraeve Incorporated. IEC of Commission Electrotechnique Internationale. IrDA of Infrared Data Association Corporation. ISO of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB of MathWorks, Inc. MAXIM of Maxim Integrated Products, Inc. MICROTEC, NUCLEUS of Mentor Graphics Corporation. Mifare of NXP. MIPI of MIPI Alliance, Inc. MIPS of MIPS Technologies, Inc., USA. murata of MURATA MANUFACTURING CO., MICROWAVE OFFICE (MWO) of Applied Wave Research Inc., OmniVision of OmniVision Technologies, Inc. Openwave Openwave Systems Inc. RED HAT Red Hat, Inc. RFMD RF Micro Devices, Inc. SIRIUS of Sirius Satellite Radio Inc. SOLARIS of Sun Microsystems, Inc. SPANSION of Spansion LLC Ltd. Symbian of Symbian Software Limited. TAIYO YUDEN of Taiyo Yuden Co. TEAKLITE of CEVA, Inc. TEKTRONIX of Tektronix Inc. TOKO of TOKO KABUSHIKI KAISHA TA. UNIX of X/Open Company Limited. VERILOG, PALLADIUM of Cadence Design Systems, Inc. VLYNQ of Texas Instruments Incorporated. VXWORKS, WIND RIVER of WIND RIVER SYSTEMS, INC. ZETEX of Diodes Zetex Limited. Last Trademarks Update 2010-10-26 Final Data Sheet 2 Revision 1.3, 2013-12-19
Bi-directional ESD / Transient / Surge Protection Diodes 1 Bi-directional ESD / Transient / Surge Protection Diodes 1.1 Features ESD/Transient/Surge protection of one data / V bus line exceeding standard: IEC61000-4-2 (ESD): ±30 kv (air/contact discharge) IEC61000-4-4 (EFT): ±50 A (5/50 ns) IEC61000-4-5 (surge): ±5 A (8/20μs) Bi-directional symmetrical working voltage: V RWM =±13.2 V Low capacitance: C L = 6 pf (typ.) Very low ESD clamping voltage, very low dynamic resistance: R DYN =0.29Ω (typ.) Pb-free (RoHS compliant) and halogen free package 1.2 Application Examples ESD protection of keypad, touchpad, buttons, audio lines, ect. 1.3 Product Description Pin 1 Pin 2 Pin 1 Pin 1 marking (lasered) TSLP-2 Pin 1 Pin 2 Pin 2 TSSLP-2 a) Pin configuration b) Schematic diagram Figure 1-1 Pin Configuration and Schematic Diagram PG-TS(S)LP-2_Dual_Diode_Serie_PinConf_and_SchematicDiag.vsd Table 1-1 Ordering Information Type Package Configuration Marking code ESD203-B1-02ELS TSSLP-2-4 1 line, bi-directional H ESD203-B1-02EL TSLP-2-20 1 line, bi--directional H Final Data Sheet 3 Revision 1.3, 2013-12-19
Characteristics 2 Characteristics 2.1 Maximum Ratings Table 2-1 Maximum Ratings at T A = 25 C, unless otherwise specified 1) Parameter Symbol Values Unit Min. Typ. Max. ESD 2) air / contact discharge V ESD - - 30 kv Peak pulse current (t p = 8/20 μs) 3) I PP - - 5 A Peak pulse power (t p = 8/20 μs) 3) P PK - - 115 W Operating temperature range T OP -55-125 C Storage temperature T stg -65-150 C 1) Device is electrically symmetrical 2) V ESD according to IEC61000-4-2 3) I PP according to IEC61000-4-5 Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. 2.2 Electrical Characteristics at T A = 25 C, unless otherwise specified Figure 2-1 Definitions of electrical characteristics Final Data Sheet 4 Revision 1.3, 2013-12-19
Characteristics Table 2-2 DC Characteristics at T A = 25 C, unless otherwise specified 1) Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Reverse working voltage V RWM - - 13.2 V Reverse current I R - 1 50 na V R =12V Trigger voltage V t1 13.7 - - V Holding voltage V h 13.7 16 - V I R =10mA 1) Device is electrically symmetrical Table 2-3 AC Characteristics at T A = 25 C, unless otherwise specified Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Line capacitance C L - 6 9 pf V R =0V, f =1MHz Table 2-4 ESD and Surge Characteristics at T A = 25 C, unless otherwise specified Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Clamping voltage 1) V CL - 17 - V I TLP =16A - 23 - I TLP =30A Clamping voltage 2) - 17 - I PP =1A - 20 23 I PP =5A Dynamic resistance 1) R DYN - 0.29 - Ω 1) ANSI/ESD STM5.5.1 - Electrostatic Discharge Sensitive Testing using Transmission Line Pulse (TLP) Model. TLP conditions: Z 0 =50Ω, t p = 100 ns, t r, =0.6ns, I TLP and V TLP averaging window: t 1 = 30 ns to t 2 = 60 ns, extraction of dynamic resistance using least squares fit of TLP characteristic between I TLP1 = 5 A and I TLP2 = 40 A. Please refer to Application Note AN210[1] 2) I PP according to IEC61000-4-5 (t p =8/20μs) Final Data Sheet 5 Revision 1.3, 2013-12-19
Typical Characteristics at T A = 25 C, unless otherwise specified 3 Typical Characteristics at T A = 25 C, unless otherwise specified 10-6 10-7 10-8 I R [A] 10-9 10-10 10-11 10-12 -15-10 -5 0 5 10 15 V R [V] Figure 3-1 Reverse current: I R = f(v R ) C L [pf] 9 8.5 8 7.5 7 6.5 6 5.5 5 4.5 4 3.5 3-14 -12-10 -8-6 -4-2 0 2 4 6 8 10 12 14 V R [V] Figure 3-2 Line capacitance: C L = f(v R ), f =1MHz Final Data Sheet 6 Revision 1.3, 2013-12-19
Typical Characteristics at T A = 25 C, unless otherwise specified 40 ESD203-B1-02series R DYN 20 30 15 R DYN = 0.29 Ω 20 10 I TLP [A] 10 0-10 5 0-5 Equivalent V IEC [kv] -20-10 R DYN = 0.29 Ω -30-15 -40-20 -30-20 -10 0 10 20 30 V TLP [V] Figure 3-3 Clamping voltage (TLP): I TLP = f(v TLP ) according ANSI/ESD STM5.5.1 - Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model. TLP conditions: Z 0 =50Ω, t p =100ns, t r =0.6ns, I TLP and V TLP averaging window: t 1 =ns to t 2 = 60 ns, extraction of dynamic resistance using squares fit to TLP characteristics between I TLP1 = 5 A and I TLP2 = 40 A. Please refer to Application Note AN210 [1] Final Data Sheet 7 Revision 1.3, 2013-12-19
Typical Characteristics at T A = 25 C, unless otherwise specified 5 ESD203-B1-02series R DYN 4 3 R DYN = 0.75 Ω 2 1 I PP [A] 0-1 -2 R DYN = 0.75 Ω -3-4 -5-20 -15-10 -5 0 5 10 15 20 V CL [V] Figure 3-4 Pulse current (IEC61000-4-5) versus clamping voltage: I PP = f(v CL ) Final Data Sheet 8 Revision 1.3, 2013-12-19
Typical Characteristics at T A = 25 C, unless otherwise specified 125 Scope: 6 GHz, 20 GS/s 100 V CL [V] 75 50 25 V CL-max-peak = 64 V V CL-30ns-peak = 16 V 0-25 -50 0 50 100 150 200 250 300 350 400 450 t p [ns] Figure 3-5 IEC61000-4-2 : V CL = f(t), 8 kv positive pulse from pin 1 to pin 2 25 Scope: 6 GHz, 20 GS/s 0-25 V CL [V] -50-75 -100 V CL-max-peak = -64 V V CL-30ns-peak = -16 V -125-50 0 50 100 150 200 250 300 350 400 450 t p [ns] Figure 3-6 IEC61000-4-2 : V CL = f(t), 8 kv negative pulse from pin 1 to pin 2 Final Data Sheet 9 Revision 1.3, 2013-12-19
Typical Characteristics at T A = 25 C, unless otherwise specified 125 Scope: 6 GHz, 20 GS/s 100 V CL [V] 75 50 25 V CL-max-peak = 104 V V CL-30ns-peak = 20 V 0-25 -50 0 50 100 150 200 250 300 350 400 450 t p [ns] Figure 3-7 IEC61000-4-2 : V CL = f(t), 15 kv positive pulse from pin 1 to pin 2 25 Scope: 6 GHz, 20 GS/s 0-25 V CL [V] -50-75 -100 V CL-max-peak = -99 V V CL-30ns-peak = -19 V -125-50 0 50 100 150 200 250 300 350 400 450 t p [ns] Figure 3-8 IEC61000-4-2 : V CL = f(t), 15 kv negative pulse from pin 1 to pin 2 Final Data Sheet 10 Revision 1.3, 2013-12-19
Package Information 4 Package Information 4.1 TSSLP-2-4 Top view +0.01 0.31-0.02 Bottom view 0.32±0.05 Cathode marking 0.05 MAX. 1) Dimension applies to plated terminals 0.355 2 1 1) 0.26±0.035 1) 0.2 ±0.035 0.62 ±0.05 TSSLP-2-3, -4-PO V01 Figure 4-1 TSSLP-2-4: Package outline (dimension in mm) 0.32 0.24 0.27 0.24 0.19 0.19 0.19 0.62 0.57 0.14 Copper Solder mask Stencil apertures TSSLP-2-3, -4-FP V02 Figure 4-2 TSSLP-2-4: Footprint (dimension in mm) 4 0.35 Ey 8 Tape type Punched Tape Embossed Tape Ex Ey 0.43 0.73 0.37 0.67 Cathode marking Ex Deliveries can be both tape types (no selection possible). Specification allows identical processing (pick & place) by users. TSSLP-2-3, -4-TP V03 Figure 4-3 TSSLP-2-4: Tape and reel (dimension in mm) Figure 4-4 TSSLP-2-4: Marking example Final Data Sheet 11 Revision 1.3, 2013-12-19
Package Information 4.2 TSLP-2-20 Top view +0.01 0.31-0.02 Bottom view 0.05 MAX. 0.6 ±0.05 0.65 ±0.05 2 1 1±0.05 Cathode marking 1) 0.5 ±0.035 1) Dimension applies to plated terminals 1) 0.25 ±0.035 TSLP-2-19, -20-PO V01 Figure 4-5 TSLP-2-20: Package outline(dimension in mm), proposal 0.6 0.35 0.45 0.35 0.28 0.28 0.38 1 0.3 0.93 Copper Solder mask Stencil apertures TSLP-2-19, -20-FP V01 Figure 4-6 TSLP-2-20: Footprint (dimension in mm), proposal 4 0.4 Cathode marking 1.16 8 0.76 Figure 4-7 TSLP-2-20: Tape information (dimension in mm), proposal TSLP-2-19, -20-TP V02 Type code 12 Cathode marking TSLP-2-19, -20-MK V01 Figure 4-8 TSLP-2-20: Marking example Final Data Sheet 12 Revision 1.3, 2013-12-19
References References [1] Infineon AG - Application Note AN210: Effective ESD Protection design at System Level Using VF-TLP Characterization Methodology Final Data Sheet 13 Revision 1.3, 2013-12-19
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