N-Channel Enhancement Mode MOSFET Features Pin Description 3V/ 29A R DS(ON) =.6mΩ (typ.) @ =V % EAS Guaranteed Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology Halogen - Free Device Available G D S G D S TO-22FB-3L TO-263-2L Applications High Frequency Synchronous Buck Converters for Computer Processor Power D High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use G N-Channel MOSFET Ordering and Marking Information S P HY493 YYXXXJWW ÿ G B HY493 ÿ YYXXXJWW G Package Code P : TO-22FB-3L Date Code YYXXX WW B: TO-263-2L Assembly Material G : Lead Free Device Note: HOOYI lead-free products contain molding compounds/die attach materials and % matte tin plate termination finish; which are fully compliant with RoHS. HOOYI lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-2D for MSL classification at lead-free peak reflow temperature. HOOYI defines Green to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 9ppm by weight in homogeneous material and total of Br and Cl does not exceed 5ppm by weight). HOOYI reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. 532
Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (T C=25 C Unless Otherwise Noted) V DSS Drain-Source Voltage 3 S Gate-Source Voltage ±2 T J Maximum Junction Temperature 75 C T STG Storage Temperature Range -55 to 75 C I S Diode Continuous Forward Current T C =25 C 29 A Mounted on Large Heat Sink I DM Pulsed Drain Current * T C =25 C ** A I D P D Continuous Drain Current T C =25 C 29 T C = C 2 A Maximum Power Dissipation T C =25 C 24 T c = C 7 W R θjc Thermal Resistance-Junction to Case.7 C/W R θja Thermal Resistance-Junction to Ambient 62.5 C/W E AS Avalanche Energy,Single Pulsed L=.5mH 325*** mj Note * Repetitive rating ; pulse width limiited by junction temperature ** Drain current is limited by junction temperature *** VD=24V V Electrical Characteristics (T C = 25 C Unless Otherwise Noted) Symbol Parameter Test Conditions Static Characteristics HY493 Min. Typ. Max. BV DSS Drain-Source Breakdown Voltage =V, I DS =25µA 3 - - V I DSS Zero Gate Voltage Drain Current V DS = 3V, =V - - T J =85 C - - 3 (th) Gate Threshold Voltage V DS =, I DS =25µA. - 3. V I GSS Gate Leakage Current =±2V, V DS =V - - ± na R DS(ON) Drain-Source On-state Resistance Diode Characteristics =V, I DS =45A -.6 2. mω V SD * Diode Forward Voltage I SD =45 A, =V -.8. V t rr Reverse Recovery Time - 38 - ns I DS =45A, dl SD /dt=a/µs Reverse Recovery Charge - 8 - nc Q rr * Unit =4.5V, I DS =45A 2. 3. mω µa 2
Electrical Characteristics (Cont.) (T C = 25 C Unless Otherwise Noted) HY493 Symbol Parameter Test Conditions Unit Min. Typ. Max. Dynamic Characteristics R G Gate Resistance =V,V DS =V,F=MHz -.5 - Ω C iss Input Capacitance =V, - 56 - C oss Output Capacitance V DS =25V, - 236 - Reverse Transfer Capacitance Frequency=.MHz - 762 - C rss t d(on) Turn-on Delay Time - 52 - T r Turn-on Rise Time V DD =5V, R G =3.3Ω, - 2 - I DS =45A, = V, ns t d(off) Turn-off Delay Time - 9 - T f Turn-off Fall Time - 78 - Gate Charge Characteristics Q g Total Gate Charge - 247 - V DS=24V, V Q gs Gate-Source Charge GS = V, - 27 - nc I DS =45A Gate-Drain Charge - 58 - Q gd Note * : Pulse test ; pulse width 3µs, duty cycle 2%.. pf 3
Typical Operating Characteristics Power Dissipation Drain Current Ptot - Power (W) 25 2 5 5 T C =25 o C 2 4 6 8 2 4 6 8 2 ID - Drain Current (A) 35 3 25 2 5 5 T C =25 o C,V G =V limited by package 2 4 6 8 2 4 6 8 2 Tc- Temperature ( C) Tc-Case Temperature ( C) Case Safe Operation Area ID - Drain Current (A) Rds(on) Limit us ms ms DC. 4 VDS - Drain - Source Voltage (V) Thermal Transient Impedance Normalized Effective Transient... Single..2.5. Duty =.5.2 Mounted on minimum pad R θja :62.5 o C/W..... Square Wave Pulse Duration (sec) 4
Typical Operating Characteristics (Cont.) Output Characteristics Drain-Source On Resistance 64 4 ID - Drain Current (A) 56 48 4 32 24 6 8 = 7,8,9,V 6V 5V 4V 3V RDS(ON) - On - Resistance (mω) 3 2 =4.5V =V 2 3 4 5 VDS - Drain-Source Voltage (V) 2 3 4 5 ID - Drain Current (A) Drain-Source On Resistance Gate Threshold Voltage RDS(ON) - On - Resistance (mω) 8 7 6 5 4 3 2 I DS =45A Normalized Threshold Vlotage.8.6.4.2..8.6.4.2 I DS =25µA 4 5 6 7 8 9 VGS - Gate - Source Voltage (V). -5-25 25 5 75 25 5 75 Tj - Junction Temperature ( C) 5
Typical Operating Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward 2.2 2. = V I DS = 45A 2 Normalized On Resistance.8.6.4.2..8.6 IS - Source Current (A) T j =75 o C T j =25 o C.4 R ON @T =25 o j C:.6m Ω.2-5 -25 25 5 75 25 5 75..2.4.6.8. Tj - Junction Temperature ( C) VSD - Source-Drain Voltage (V) Capacitance Gate Charge C - Capacitance (pf) 22 Frequency=MHz 2 8 6 4 Ciss 2 8 6 4 Coss 2 Crss 5 5 2 25 3 35 4 VGS - Gate-source Voltage (V) V DS =24V 9 I DS =45A 8 7 6 5 4 3 2 4 8 2 6 2 24 28 VDS - Drain - Source Voltage (V) QG - Gate Charge (nc) 6
Avalanche Test Circuit and Waveforms V DS L t p V DSX(SUS) DUT V DS I AS R G V DD V DD tp I L.W E AS t AV Switching Time Test Circuit and Waveforms V DS DUT R D V DS 9% R G V DD % tp t d(on) t r t d(off) t f 7
Package Information TO-22FB-3L SYMBOL MIN NOM MAX MIN NOM MAX A 4.4 4.57 4.7.73.8.85 A.27.3.33.5.5.52 A2 2.35 2.4 2.5.93.94.98 b.77.8.9.3.3.35 b2.7.27.36.46.5.54 c.48.5.56.9.2.22 D 5.4 5.6 5.8.66.64.622 D 9. 9. 9.2.354.358.362 DEP.5..2.2.4.8 E 9.8..2.386.394.42 E - 8.7 - -.343 - E2 9.8..2.386.394.42 e 2.54 BSC. BSC e 5.8 BSC.2 BSC H 6.4 6.5 6.6.252.256.26 L 2.75 3.5 3.65.52.53.537 L - 3. 3.3 -.22.3 L2 2.5 REF.98 REF P 3.5 3.6 3.63.38.42.43 P 3.5 3.6 3.63.38.42.43 Q 2.73 2.8 2.87.7..3 θ 5 7 9 5 7 9 θ2 3 5 3 5 θ3 3 5 3 5 8
TO-263-2L SYMBOL MM INCH MIN NOM MAX MIN NOM MAX A 4.4 4.57 4.7.73.8.85 A.22.27.32.48.5.52 A2 2.59 2.69 2.79.2.6. A3...2..4.8 b.77.83.9.3.32.35 b.2.27.36.47.5.54 c.34.38.47.3.5.9 D 8.6 8.7 8.8.339.343.346 E..6.26.394.4.44 E2...2.394.398.42 e 2.54 BSC. BSC H 4.7 5. 5.5.579.594.6 H2.7.27.4.46.5.55 L 2. 2.3 2.6.79.9.2 L.45.55.7.57.6.67 L2 2.5 REF.98 REF L4.25 BSC. BSC 5 8 5 8 5 7 9 5 7 9 2 3 5 3 5 ΦP.4.5.6.55.59.63 DEP.5..2.2.4.8 9
Devices Per Unit Package Type Unit Quantity TO-22FB-3L Tube 5 TO-263-2L Tube 5 Classification Profile
Classification Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly Preheat & Soak Temperature min (T smin) Temperature max (T smax) Time (T smin to T smax) (t s) C 5 C 6-2 seconds 5 C 2 C 6-2 seconds Average ramp-up rate (T smax to T P) 3 C/second max. 3 C/second max. Liquidous temperature (T L) Time at liquidous (t L) Peak package body Temperature (T p)* Time (t P)** within 5 C of the specified classification temperature (T c) 83 C 6-5 seconds 27 C 6-5 seconds See Classification Temp in table See Classification Temp in table 2 2** seconds 3** seconds Average ramp-down rate (T p to T smax) 6 C/second max. 6 C/second max. Time 25 C to peak temperature 6 minutes max. 8 minutes max. * Tolerance for peak profile Temperature (T p) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (t p) is defined as a supplier minimum and a user maximum. Table. SnPb Eutectic Process Classification Temperatures (Tc) Package Volume mm 3 Thickness <35 Table 2. Pb-free Process Classification Temperatures (Tc) Volume mm 3 35 <2.5 mm 235 C 22 C 2.5 mm 22 C 22 C Package Thickness Volume mm 3 <35 Volume mm 3 35-2 Volume mm 3 >2 <.6 mm 26 C 26 C 26 C.6 mm 2.5 mm 26 C 25 C 245 C 2.5 mm 25 C 245 C 245 C Reliability Test Program Test item Method Description SOLDERABILITY JESD-22, B2 5 Sec, 245 C HOLT JESD-22, A8 Hrs, Bias @ 25 C PCT JESD-22, A2 68 Hrs, %RH, 2atm, 2 C TCT JESD-22, A4 5 Cycles, -65 C~5 C