AN4313 Application note

Similar documents
LM323. Three-terminal 3 A adjustable voltage regulators. Description. Features

AN4327 Application note

MMBTA42. Small signal NPN transistor. Features. Applications. Description

MEMS audio surface-mount bottom-port silicon microphone with analog output. Description. Table 1. Device summary

DSL03. Secondary protection for VDSL2 lines. Description. Features. Complies with the following standards

EMIF04-1K030F3. 4-line IPAD, EMI filter including ESD protection. Features. Application. Description. Complies with the following standards:

Features. Description. Table 1. Device summary. Order code Packaging Branding LET9180 M246 LET9180. May 2013 DocID Rev 1 1/10

2STR2160. Low voltage fast-switching PNP power transistor. Features. Applications. Description

MJB44H11T4-A. Automotive-grade low voltage NPN power transistor. Features. Applications. Description

LD A, very low drop voltage regulators. Features. Description. Table 1. Device summary

Description. Table 1. Device summary table. Order code Temperature range Package Packing Marking SO-14. (automotive grade) (1)

STTH60AC06C. Turbo 2 ultrafast high voltage rectifier. Features. Description

STR2550. High voltage fast-switching PNP power transistor. Features. Applications. Description. Excellent h FE linearity up to 50 ma

STEVAL-ISQ010V1. High-side current-sense amplifier demonstration board based on the TSC102. Features. Description

FERD15S50. Field effect rectifier. Features. Description

BALF D3. 50 ohm nominal input / conjugate match balun for STLC2690, with integrated harmonic filter. Description. Features.

AN4439 Application note

EVAL-RHF310V1. EVAL-RHF310V1 evaluation board. Features. Description

EVALSTPM32. Single-phase energy metering evaluation board with shunt current sensor based on the STPM32. Description. Features

STR1550. High voltage fast-switching NPN power transistor. Features. Applications. Description. Excellent h FE linearity up to 50 ma

UM1746 User manual. 500 W fully digital AC-DC power supply based on the STM32F334 microcontroller. Introduction

STEVAL-CCA040V1. 4X10 Watt dual/quad power amplifier demonstration board based on the STA540SAN. Features. Description

CBTVS2A12-1F3. Circuit breaker with transient voltage suppressor. Features. Description. Complies with the following standards:

SD4931. HF/VHF/UHF RF power N-channel MOSFET. Features. Description

STPSC20H065C. 650 V power Schottky silicon carbide diode. Description. Features

Low noise and low drop voltage regulator with shutdown function. Description

STTH110-Y. Automotive high voltage ultrafast rectifier. Description. Features

Dual P-channel 100 V, Ω typ., 3.3 A STripFET VI DeepGATE Power MOSFET in a PowerFLAT 5x6 double island. Features

ESDAVLC6-1V2. Single line low capacitance Transil for ESD protection. Description. Features. Applications. Complies with following standards:

BAT30F4 Datasheet production data Features Description 0201 package Figure 1. Pin configuration and marking Table 1. Device summary Symbol Value

STAC4932B. HF/VHF/UHF RF power N-channel MOSFET. Features. Description

Chop away input offsets with TSZ121/TSZ122/TSZ124. Main components Single very high accuracy (5 μv) zero drift micropower 5 V operational amplifier

Description. Table 1. Device summary. Order code Temp. range Package Packing Marking

AN2333 Application note

AN2837 Application note

STLQ ma, 3 μa supply current low drop linear regulator. Features. Applications. Description

BALF-NRG-01D3. 50 Ω / conjugate match to BlueNRG balun transformer and integrated filtering. Description. Features. Applications.

STTH6003. High frequency secondary rectifier. Description. Features

Description. Notes: (1) Qualification and characterization according to AEC Q100 and Q003 or equivalent,

BALF-SPI-01D3. 50 ohm nominal input / conjugate match balun to Spirit1, with integrated harmonic filter. Features. Applications. Description.

LM248, LM348. Four UA741 quad bipolar operational amplifiers. Description. Features

Wide range isolated flyback demonstration board, single output 12 V/4.2 W based on the VIPER16LN. Description

AN1336 Application note

LCP03. Transient voltage suppressor for dual voltage SLIC. Features. Applications. Description

TN1156 Technical note

AN1441 Application note

SMA661AS. Fully integrated GPS LNA IC. Features. Applications. Description

Description. Table 1. Device summary. Order code Temp. range Package Packing Marking

Description. Table 1. Device summary. Order code Temp. range Package Packing Marking

Description. Table 1. Device summary. Order code Temp. range Package Packaging Marking

Description. Table 1. Device summary. Order codes

STEVAL-ISA005V1. 1.8W buck topology power supply evaluation board with VIPer12AS. Features. Description. ST Components

TDA7384A. 4 x 46 W quad bridge car radio amplifier. Features. Description

LM217M, LM317M. Medium current 1.2 to 37 V adjustable voltage regulator. Description. Features

1 Diagram Pin configuration Typical application Maximum ratings Electrical characteristics... 7

LD39030SJ285R. 300 ma low quiescent current soft-start, low noise voltage regulator. Applications. Description. Features

Features. Description. Table 1. Device summary. Order code Temperature range Package Packaging Marking

ESDA5-1BF4. Low clamping single line bidirectional ESD protection. Features. Applications. Description. Complies with the following standards

STTH60P03S. Ultrafast rectifier PDP energy recovery. Features. Description

BD235 BD237. Low voltage NPN power transistors. Features. Applications. Description. Low saturation voltage NPN transistors

STEVAL-IKR002V4B. SPIRIT1 - low data rate transceiver MHz - daughterboard integrated balun. Description. Features

Features. Description. Table 1. Device summary. Order code Marking Package Packaging. STGW60V60F GW60V60F TO-247 Tube

ECMF02-2BF3. Dual line IPAD, common mode filter with ESD protection for high speed serial interface. Description. Features.

Features. Description. Table 1. Device summary. Quality Level. Engineering Model

AN4379 Application note

TS881. Rail-to-rail 0.9 V nanopower comparator. Description. Features. Applications

Description. Order code Package Packing

STAC3932B. HF/VHF/UHF RF power N-channel MOSFET. Features. Description

AN279 Application note

R 1 typ. = 15 kω. Order codes Marking Polarity Package Packaging. 2N6036 2N6036 NPN SOT-32 Tube 2N6039 2N6039 PNP SOT-32 Tube

50 Ω nominal input / conjugate match balun to nrf51422-qfaa, nrf24le1, nrf51822-qfaa/ab, with integrated harmonic filter.

Obsolete Product(s) - Obsolete Product(s)

Description. Table 1. Device summary

STPS2H100. Power Schottky rectifier. Features. Description

AN3332 Application note

LD A, very low drop voltage regulators. Description. Features

BD533 BD535 BD537 BD534 BD536

Description. Table 1. Device summary SOT-223 DPAK TO-220

EMIF06-HSD03F3 Datasheet production data Features Flip-Chip package (17 bumps) Figure 1. Pin configuration (bump side)

STEVAL-CCA011V1. Filter-free stereo 2x2.5 W Class-D audio power amplifier demonstration board based on the TS2012FC. Features.

AN3359 Application note 1 Introduction Low cost PCB antenna for 2.4GHz radio: Meander design

D44H8 - D44H11 D45H8 - D45H11

AN4014 Application Note Adjustable LED blinking frequency using a potentiometer and STM8SVLDISCOVERY Application overview

TSOT23-5L. Description. systems. Regulator ground current increases Input voltage from 2.5 V to 6 V

BD243C BD244C. Complementary power transistors. Features. Applications. Description. Complementary NPN-PNP devices. Power linear and switching TO-220

BD241A BD241C. NPN power transistors. Features. Applications. Description. NPN transistors. Audio, general purpose switching and amplifier transistors

AN2167 Application note

ST26025A. PNP power Darlington transistor. Features. Applications. Description

Obsolete Product(s) - Obsolete Product(s)

2N2219AHR. Hi-Rel NPN bipolar transistor 40 V A. Features. Description

TDA x 45 W quad bridge car radio amplifier. Features. Description. Protections:

35 W bridge car radio amplifier with low voltage operation. Description. Table 1. Device summary. Order code Package Packing

AN3134 Application note

LD A low drop positive voltage regulator: adjustable and fixed. Features. Description

Order codes Marking Polarity Package Packaging. MJD44H11T4 MJD44H11 NPN DPAK Tape and reel MJD45H11T4 MJD45H11 PNP DPAK Tape and reel

AN1756 Application note

MJE182 Low voltage high speed switching NPN transistor Features Applications Description High speed switching NPN device

SPV1001T40. Cool bypass switch for photovoltaic application. Features. Application. Description TO-220

AN4199 Application note

R 1 typ. = 15 kω. Order codes Marking Polarity Package Packaging. STX112-AP X112 NPN TO92-AP Ammopack STX117-AP X117 PNP TO92-AP Ammopack

Transcription:

Application note Guidelines for designing touch sensing applications with projected sensors Introduction This application note describes the layout and mechanical design guidelines used for touch sensing applications with projected sensors. This document describes only what is specifically related to projected sensors, designed using STM8L52/L53 microcontrollers. To have general tips and tricks for designing touch application, please refer to AN4312. Table 1 lists the microcontrollers concerned by this application note. Table 1. Applicable products Type Applicable products Microcontrollers STM8TL52/L53 lines November 2013 DocID024816 Rev 1 1/15 www.st.com

Contents AN4313 Contents 1 Technology Overview........................................ 4 2 Projected sensor design...................................... 5 2.1 Touchkey sensor............................................ 5 2.1.1 Diamond type sensor........................................ 5 2.1.2 H sensor single layer........................................ 6 2.1.3 H type sensor two layers..................................... 7 2.2 Linear sensor............................................... 8 2.3 Rotary sensor............................................... 9 2.4 Specific recommendations.................................... 10 2.4.1 PCB and layout........................................... 10 3 Conclusion................................................ 13 4 Revision history........................................... 14 2/15 DocID024816 Rev 1

List of figures List of figures Figure 1. Electric field between 2 surface electrodes..................................... 5 Figure 2. Diamond implementation................................................... 6 Figure 3. H sensor (single layer)..................................................... 7 Figure 4. Two-layer implementation................................................... 8 Figure 5. Normal linear sensor....................................................... 9 Figure 6. Small linear sensor........................................................ 9 Figure 7. Rotary sensor made of 5 parcels............................................ 10 Figure 8. Ground floods around Tx.................................................. 11 Figure 9. Potential false key detection................................................ 12 DocID024816 Rev 1 3/15 3

Technology Overview AN4313 1 Technology Overview STMicroelectronics offers capacitive sensing technology. This technology is based on: The projected acquisition principle with STM8TL5x microcontrollers. An overview of how it works: a capacitor is modified when the finger gets close to a sensor. The finger changes the dielectric properties. The sensor consists of two electrodes: Tx driven by a port in output mode, Rx in the return path to a dedicated port in read mode. There is a sampling capacitor which stores the charges coming from the electrodes which form a coupling capacitor with less capacitance than the sample one. When a finger approaches, the dielectric (between the two electrodes) is modified and so the capacitance decreases. As a consequence, the time taken to load the sample capacitor will increase and this difference is used to detect if a finger is present or not. 4/15 DocID024816 Rev 1

Projected sensor design 2 Projected sensor design 2.1 Touchkey sensor The touchkey sensor can be of any shape, however it is recommended to use a square as this shape is the simplest. The touch sensing library and ProxSense TM IP automatically compensate for capacitance differences, but the acquisition time and processing parameters can be optimized if the sensors have a similar capacitance. For this reason, it is recommended to use the same shape for all sensors. The physical principlefor a touchkey, linear or rotary sensor is that an electric field surrounds the Tx and Rx electrodes (see Figure 1). This field is dependent on the permittivity R of both the front panel and the PCB. It should not be dependent on air bubbles or moisture which can be trapped between them, because they must be sufficiently well bonded by the adhesive. Figure 1. Electric field between 2 surface electrodes Electric field Electric field Electrodes Dielectric panel Electrodes MS18983V1 1. The above figure only shows a simplified representation of the sensor; for specification details, refer to Figure 2 to Figure 4. Hence, the sensitivity is dependent on known materials and is optimized. This will ensure that the disturbance caused by the user s finger is detected and measured with accuracy. It is recommended to define the sensor size in relation to the panel thickness (d) and viceversa. The following formula helps the designer to define the external size of touchkey sensors (L), and also for linear touch sensor and rotary touch sensor parcels: L (mm) = 3 + (1.75 * d) For example, a typical 10*10 mm touchkey should be used with a 4 mm Plexiglas panel. 2.1.1 Diamond type sensor Note: In this diamond type implementation, the Tx and Rx electrodes form a diamond shape where the two electrodes are on the same layer, using a bridge (see Figure 2). This symmetrical implementation allows swapping Rx & Tx. DocID024816 Rev 1 5/15 14

Projected sensor design AN4313 L Figure 2. Diamond implementation Gnd Gnd Tx Rx (Top layer) L Rx Tx Rx 0.2 to 0.5 mm 1/5 L 0.2 to 0.5 mm Clearance Tx to GND = 1 mm Tx (bottom layer) MS18984V3 2.1.2 H sensor single layer In this implementation, Tx is on the top layer and forms two rectangles face to face with a gap between them. The Rx electrode is a wire on the top layer, in the middle of the Tx gap (see Figure 3). 6/15 DocID024816 Rev 1

Projected sensor design Figure 3. H sensor (single layer) L 1 mm Tx L 1/2 L 14L / 14L / Rx Between 1/8 L and 1/16 L MS18985V3 2.1.3 H type sensor two layers In this implementation, the Tx electrode forms an H, and the Rx electrode is a wire which lies on the Tx square. There is an isolating material between them, and Tx square electrode is hollow under the Rx electrode (see Figure 4). Obviously, this kind of touchkey is made of two layers. DocID024816 Rev 1 7/15 14

Projected sensor design AN4313 Figure 4. Two-layer implementation L 1/2L L Tx 0.2 to 0.5 mm 1/4L 1/4L Rx Between 1/8 L and 1/16 L H sensor (cross section) panel d PCB bottom MS18986V3 2.2 Linear sensor An example of a linear sensor with five parcels is described in Figure 5. This kind of linear touch sensor is fine when each parcel is about 6 mm to 10 mm and it could have N parcels. So, for an overall length L, you can calculate the parcel number: N = L / parcel size (adjust the parcel size to obtain N as an integer). 8/15 DocID024816 Rev 1

Projected sensor design Figure 5. Normal linear sensor Tx (bottom) Rx1 Rx2 Rx3 Global Rx width 0.2 to 0.5 mm Rx4 Rx5 Rx1 3 mm 6 mm Global clearance Rx to Tx: 1 mm 40 mm 5.5 mm 0.5 mm 3 mm MS18987V2 For smaller linear touch sensors under 6 mm, you can use an H sensor placed side by side (with same size rules as H touchkey) (see Figure 6). Figure 6. Small linear sensor Tx Rx1 Rx2 Rx3 Rx4 Rx5 MS18988V2 2.3 Rotary sensor The design of rotary sensor with the projected technology is very similar to a linear sensor one, so the recommended sizes for a parcel are the same (see Figure 7). You can design rotary sensors with a diameter of 12 mm to 30 mm having a minimum of 5 parcels. DocID024816 Rev 1 9/15 14

Projected sensor design AN4313 Figure 7. Rotary sensor made of 5 parcels Rx1 W=3.14D/5 (W/2) 2 )- - 3mm Rx2 0.5mm Tx (bottom ) 0.5mm D Global Rx width 0.2 to 0.5mm Rx3 W/2 0.5mm Global clearance Rx to Tx: 1mm Rx5 Rx4 MS18989V2 To design the rotary sensor: 1. Define the diameter (D) of the rotary sensor (12 mm to 30 mm) and the number of parcels (N minimum = 5) 2. Verify the outer arc (W) of each parcel in the rotary sensor; it should be from 6 to 10 mm 3. If necessary, adjust the parcel number by using the following formula: N = 3.14 * D / W (with W chosen between 6 and 10 mm to obtain N as an integer) 2.4 Specific recommendations 2.4.1 PCB and layout Ground considerations One of the advantages of a projected sensor compared to a surface sensor is that its Tx and Rx signals are less sensitive to the external environment than the ones used with the surface sensor because they are coupled together. Rx is impacted by the ground in any case (but less than the surface sensor); on the other hand, Tx is shielded by the ground. So the sensor can be flooded as shown in Figure 8. 10/15 DocID024816 Rev 1

Projected sensor design Figure 8. Ground floods around Tx Rx1 Rx2 Rx3 Rx4 Rx1 GND Tx (bottom) Clearance Tx to GND = 1 mm MS18991V2 Ground plane at the bottom is recommended to: prevent false detection from the back side shield Rx track from Tx one increase the sensitivity improve the directivity For water immunity, avoid ground plane at top layer, and reduce it at the bottom by using hatched plane. Tx routing To route the Tx signal efficiently, the most important thing to respect and almost the only one is the RC time constant rule. But keep in mind that signals which switch rapidly (more than tens of khz) such as high speed communication signals, LCD or LED drive signals must be routed far away from Tx. The Tx track is less sensitive than the Rx track so it can be put on any layer of the PCB but Rx tracks should be considered when routing it to ensure a good design. Rx routing On the other hand, the Rx track is very sensitive due to the capacitance of the sensor. A false detection may occur if some guidelines are not followed. The most obvious is to route it far from the sensor itself, e.g. on another layer. Another one is to avoid placing ground near the Rx track which reduces the sensitivity. Then, when Rx and Tx are very close (about less than 10 mm), an electric field is also generated and a finger which roams here can generate a false touchkey detection (see Figure 9). DocID024816 Rev 1 11/15 14

Projected sensor design AN4313 Figure 9. Potential false key detection Tx trace Panel PCB Rx trace MS18994V1 Avoiding false detection Follow these recommendations to avoid false touchkey detection: The Tx and Rx tracks should never cross each other; but if they do, it must be at a right angle. When the Rx and Tx tracks go in the same direction and to places that are close together, it is better to separate them with a ground which has to be more than twice the width of each signal track. To further reduce the coupling between the Tx and Rx tracks, the Tx signal can run under the ground, in this case even if Rx is near the ground, coupling should not happen. If the Rx track is behind the Tx track from a user point of view, the user cannot modify the electrical field. Obviously, if Rx and Tx signals are too far apart, there will be no interaction. Furthermore, you can consider these general guidelines: The Tx and Rx tracks must be as thin as possible. The Rx tracks must be as far as possible from the touchkey. When there are several touchkeys, it is better to keep all the Tx tracks together and all the Rx tracks together, which greatly reduces any false touchkey detection. 12/15 DocID024816 Rev 1

Conclusion 3 Conclusion The projected sensors can be used for designing touch sensing application and great cares must be given to the design guideline described in this document such as reduce the ground coupling or track dimensions. In other cases, issues can remain so only to test deeply can validate the system. DocID024816 Rev 1 13/15 14

Revision history AN4313 4 Revision history Table 2. Document revision history Date Revision Changes 27-Nov-2013 1 Initial release. 14/15 DocID024816 Rev 1

Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. ST PRODUCTS ARE NOT AUTHORIZED FOR USE IN WEAPONS. NOR ARE ST PRODUCTS DESIGNED OR AUTHORIZED FOR USE IN: (A) SAFETY CRITICAL APPLICATIONS SUCH AS LIFE SUPPORTING, ACTIVE IMPLANTED DEVICES OR SYSTEMS WITH PRODUCT FUNCTIONAL SAFETY REQUIREMENTS; (B) AERONAUTIC APPLICATIONS; (C) AUTOMOTIVE APPLICATIONS OR ENVIRONMENTS, AND/OR (D) AEROSPACE APPLICATIONS OR ENVIRONMENTS. WHERE ST PRODUCTS ARE NOT DESIGNED FOR SUCH USE, THE PURCHASER SHALL USE PRODUCTS AT PURCHASER S SOLE RISK, EVEN IF ST HAS BEEN INFORMED IN WRITING OF SUCH USAGE, UNLESS A PRODUCT IS EXPRESSLY DESIGNATED BY ST AS BEING INTENDED FOR AUTOMOTIVE, AUTOMOTIVE SAFETY OR MEDICAL INDUSTRY DOMAINS ACCORDING TO ST PRODUCT DESIGN SPECIFICATIONS. PRODUCTS FORMALLY ESCC, QML OR JAN QUALIFIED ARE DEEMED SUITABLE FOR USE IN AEROSPACE BY THE CORRESPONDING GOVERNMENTAL AGENCY. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. 2013 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com DocID024816 Rev 1 15/15 15