GENERAL DESCRIPTION QUICK REFERENCE DATA Passivated, sensitive gate thyristors SYMBOL PARAMETER MAX. MAX. MAX. UNIT in a plastic envelope, intended for use in general purpose switching and BT58-5R 6R 8R phase control applications. These V DRM, Repetitive peak off-state 5 6 8 V devices are intended to be interfaced V RRM voltages directly to microcontrollers, logic I T(AV) Average on-state current 5 5 5 A integrated circuits and other low I T(RMS) RMS on-state current 8 8 8 A power gate trigger circuits. I TSM Non-repetitive peak on-state current 75 75 75 A PINNING - TOAB PIN CONFIGURATION SYMBOL PIN DESCRIPTION cathode anode tab a k gate tab anode g LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC ). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT -5R -6R -8R V DRM, V RRM Repetitive peak off-state voltages - 5 6 8 V I T(AV) Average on-state current half sine wave; T mb C - 5 A I T(RMS) RMS on-state current all conduction angles - 8 A I TSM Non-repetitive peak half sine wave; T j = 5 C prior to on-state current surge t = ms - 75 A I t I t for fusing t = 8. ms t = ms - - 8 8 A A s di T /dt Repetitive rate of rise of I TM = A; I G = 5 ma; - 5 A/µs on-state current after triggering di G /dt = 5 ma/µs I GM Peak gate current - A V RGM Peak reverse gate voltage - 5 V P GM Peak gate power - 5 W P G(AV) Average gate power over any ms period -.5 W T stg Storage temperature - 5 C T j Operating junction - 5 C temperature Although not recommended, off-state voltages up to 8V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 5 A/µs. Note: Operation above C may require the use of a gate to cathode resistor of kω or less. October Rev.
THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R th j-mb Thermal resistance - -. K/W junction to mounting base R th j-a Thermal resistance in free air - 6 - K/W junction to ambient STATIC CHARACTERISTICS T j = 5 C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I GT Gate trigger current V D = V; I T =. A - 5 µa I L Latching current V D = V; I GT =. A -. ma I H Holding current V D = V; I GT =. A -. 6 ma V T On-state voltage I T = 6 A -..6 V V GT Gate trigger voltage V D = V; I T =. A -..5 V V D = V DRM() ; I T =. A; T j = C.. - V I D, I R Off-state leakage current V D = V DRM() ; V R = V RRM() ; T j = 5 C -..5 ma DYNAMIC CHARACTERISTICS T j = 5 C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT dv D /dt Critical rate of rise of V DM = 67% V DRM() ; T j = 5 C; 5 - V/µs off-state voltage exponential waveform; R GK = Ω t gt Gate controlled turn-on I TM = A; V D = V DRM() ; I G = 5 ma; - - µs time di G /dt =. A/µs t q Circuit commutated V D = 67% V DRM() ; T j = 5 C; - - µs turn-off time I TM = A; V R = V; di TM /dt = A/µs; dv D /dt = V/µs; R GK = kω October Rev.
8 6 Ptot (W) conduction form angle factor degrees (a) 6.8 9..9 8.57.8..9 Tmb() ( C) 9 a =.57 5 7 ITSM / A 8 7 6 5 I ITSM T T time Tj initial = 5 C 9 5 6 IT(AV) (A) Fig.. Maximum on-state dissipation, P tot, versus average on-state current, I T(AV), where a = form factor = I T(RMS) / I T(AV). Number of half cycles at 5Hz Fig.. Maximum permissible non-repetitive peak on-state current I TSM, versus number of cycles, for sinusoidal currents, f = 5 Hz. ITSM / A IT(RMS) / A di /dt limit T 6 IT I TSM 8 T time Tj initial = 5 C us us ms ms T / s Fig.. Maximum permissible non-repetitive peak on-state current I TSM, versus pulse width t p, for sinusoidal currents, t p ms... surge duration / s Fig.5. Maximum permissible repetitive rms on-state current I T(RMS), versus surge duration, for sinusoidal currents, f = 5 Hz; T mb C. IT(RMS) / A 9 8 BT58 C.6 VGT(Tj) VGT(5 C) 7. 6 5..8.6-5 5 5 Tmb / C Fig.. Maximum permissible rms current I T(RMS), versus mounting base temperature T mb.. -5 5 5 Fig.6. Normalised gate trigger voltage V GT (T j )/ V GT (5 C), versus junction temperature T j. October Rev.
.5 IGT(Tj) IGT(5 C) IT / A Tj = 5 C Tj = 5 C.5.5 Vo = V Rs =. Ω typ -5 5 5 Fig.7. Normalised gate trigger current I GT (T j )/ I GT (5 C), versus junction temperature T j..5.5 VT / V Fig.. Typical and imum on-state characteristic. IL(Tj) IL(5 C) BT5 Zth j-mb (K/W).5.5. P D t p.5-5 5 5 Fig.8. Normalised latching current I L (T j )/ I L (5 C), versus junction temperature T j.. us.ms ms ms.s s s tp / s Fig.. Transient thermal impedance Z th j-mb, versus pulse width t p. t.5 IH(Tj) IH(5 C) dvd/dt (V/us) RGK = ohms.5.5-5 5 5 Fig.9. Normalised holding current I H (T j )/ I H (5 C), versus junction temperature T j. 5 5 Fig.. Typical, critical rate of rise of off-state voltage, dv D /dt versus junction temperature T j. October Rev.
MECHANICAL DATA Dimensions in mm Net Mass: g,5,,7,,8 5,9 min 5,8, not tinned, (x),5,5,,5 min,9 (x),6, Notes. Refer to mounting instructions for SOT78 (TO) envelopes.. Epoxy meets UL9 V at /8". Fig.. SOT78 (TOAB). pin connected to mounting base. October 5 Rev.
DEFINITIONS DATA SHEET STATUS DATA SHEET PRODUCT DEFINITIONS STATUS STATUS Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-65A Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC ). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Please consult the most recently issued datasheet before initiating or completing a design. The product status of the device(s) described in this datasheet may have changed since this datasheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. October 6 Rev.