Si38BDV Load Switch with Level-Shift PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A).8 to 8 DESCRIPTION. at V IN =. V.9. at V IN =. V..7 at V IN =.8 V.7 The Si38BDV includes a p- and n-channel MOSFET in a single TSOP- package. The low on-resistance p-channel TrenchFET is tailored for use as a load switch. The n-channel, with an external resistor, can be used as a levelshift to drive the p-channel load-switch. The n-channel MOSFET has internal ESD protection and can be driven by logic signals as low as. V. The Si38BDV operates on supply lines from.8 V to 8 V, and can drive loads up to.9 A. FEATURES Halogen-free According to IEC 9-- Definition m Low R DS(on) TrenchFET :.8 V Rated.8 V to 8 V Input. V to 8 V Logic Level Control Low Profile, Small Footprint TSOP- Package 3 V ESD Protection On Input Switch, V ON/OFF Adjustable Slew-Rate Compliant to RoHS Directive /9/EC APPLICATION CIRCUITS Si38BDV V IN R Q, 3 C V OUT (µs) 3 C i = µf C o = µf ON/OFF Q C o LOAD 8 C i 8 GND Note: For switching variations with other V IN /R combinations See Typical Characteristics at V IN =. V, R = k COMPONENTS R Pull-Up Resistor Typical k to M * Optional Slew-Rate Control Typical to k * C Optional Slew-Rate Control Typical pf * Minimum R value should be at least x to ensure Q turn-on. The Si38BDV is ideally suited for high-side load switching in portable applications. The integrated N-Channel level-shift device saves space by reducing external components. The slew rate is set externally so thaise-times can be tailored to different load types. S--Rev. D, -Sep-
Si38BDV FUNCTIONAL BLOCK DIAGRAM Si38BDV TSOP- Top View S Q, 3 D R, C R, C D D 3 ON/OFF S ON/OFF Q Ordering Information: Si38BDV-T-E3 (Lead (Pb)-free) Si38BDV-T-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T A = C, unless otherwise noted) Parameter Symbol Limit Unit Input Voltage V IN 8 V On/Off Voltage V ON/OFF 8 Load Current Continuous a, b ±.9 I L Pulsed b, c ± A Continuous Intrinsic Diode Conduction a I S - Maximum Power Dissipation a P D.83 W Operating Junction and Storage Temperature Range T J, T stg - to C ESD Rating, MIL-STD-883D Human Body Model ( pf, ) ESD 3 kv THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambient (continuous current) a R thja C/W Maximum Junction-to-Foot (Q) R thjc SPECIFICATIONS (T J = C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Off Characteristics Reverse Leakage Current I FL V IN = 8 V, V ON/OFF = V µa Diode Forward Voltage V SD I S = - A -.77 - V OnN Characteristics Input Voltage Range V IN.8 8 V V IN =. V.. On-Resistance (P-Channel) at A R DS(on) V ON/OFF =. V, I D = A V IN =. V.7. V IN =.8 V.3.7 On-State (P-Channel) Drain-Current I D(on) V IN-OUT. V, V IN = V, V ON/OFF =. V V IN-OUT.3 V, V IN = 3 V, V ON/OFF =. V A Notes: a. Surface Mounted on FR board. b. V IN = 8 V, V ON/OFF = 8 V, T A = C. c. Pulse test: pulse width 3 µs, duty cycle %. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S--Rev. D, -Sep-
Si38BDV TYPICAL CHARACTERISTICS ( C, unless otherwise noted). V GS = V thru V.3 V ON/OFF =. V to 8 V - Drain Current (A) 3. V V DROP (V).. T J = C T J = C I D.8 3 V DS - Drain-to-Source Voltage (V) Output Characteristics. 3 I L - (A) V DROP vs. I L at V IN =. V... V ON/OFF =. V to 8 V.8 V ON/OFF =. V to 8 V. (V) T J = C (V). V DROP.3. T J = C V DROP. T J = C T J = C... 3 I L - (A) V DROP vs. I L at V IN =. V....... 3. 3.. I L - (A) V DROP vs. I L at V IN =.8 V...8 V ON/OFF =. V to 8 V.3 V ON/OFF =. V to 8 V (V) V DROP.. T J = C R DS(on) - On-Resistance (Normalized)....9 V IN = V V IN =.8 V..8 T J = C..7 3 7 8 - - 7 V IN (V) T J - Junction Temperature ( C) V DROP vs. V IN at Normalized On-Resistance vs. Junction Temperature S--Rev. D, -Sep- 3
Si38BDV TYPICAL CHARACTERISTICS ( C, unless otherwise noted). V ON/OFF =. V to 8 V R DS(on) - On-Resistance ( )..3.. T J = C I S - Source Current (A) T J = C T J = C T J = C. 3 7 8 V IN (V) On-Resistance vs. Input Voltage.....8... V SD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage 3 3 C i = µf C o = µf C i = µf C o = µf 8 at V IN =. V, R = k 8 at V IN =. V, R = k C i = µf C o = µf 3 3 C i = µf C o = µf 3 7 8 at V IN =.8 V, R = k 8 at V IN =. V, R = 3 k S--Rev. D, -Sep-
Si38BDV TYPICAL CHARACTERISTICS ( C, unless otherwise noted) 3 3 3 3 (µs) C i = µf C o = µf (µs) C i = µf C o = µf 8 at V IN =. V, R = 3 k 8 at V IN =.8 V, R = 3 k ms - Drain Current (A) I D. Limited by R DS(on) * ms s s DC T C = C Single Pulse.. V DS - Drain-to-Source Voltage (V) *V GS > minimum V GS at which R DS(on) is specified Safe Operating Area, Junction-to-Case Normalized Effective Transient Thermal Impedance. Duty Cycle =..... Single Pulse t t t. Duty Cycle, D = t. Per Unit Base = R thja = C/W 3. T JM - T A = P DM Z (t) thja. - - 3 - - Square Wave Pulse Dureation (s) Normalized Thermal Transient Impedance, Junction-to-Ambient maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see /ppg?788. Notes: P DM. Surface Mounted S--Rev. D, -Sep-
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