Is Now Part of To learn more about ON emiconductor, please visit our website at www.onsemi.com ON emiconductor and the ON emiconductor logo are trademarks of emiconductor Components Industries, LLC dba ON emiconductor or its subsidiaries in the United tates and/or other countries. ON emiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON emiconductor s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf. ON emiconductor reserves the right to make changes without further notice to any products herein. ON emiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON emiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON emiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON emiconductor. Typical parameters which may be provided in ON emiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON emiconductor does not convey any license under its patent rights nor the rights of others. ON emiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. hould Buyer purchase or use ON emiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON emiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON emiconductor was negligent regarding the design or manufacture of the part. ON emiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
FM766 N-Channel PowerTrench MOFET 3 V,.8 mω Features Max r (on) =.8 mω at V G = V, I = 5 A Max r (on) = 3.5 mω at V G =.5 V, I = 9 A Advanced Package and ilicon combination for low r (on) and high efficiency Next generation enhanced body diode technology, engineered for soft recovery. Provides chottky-like performance with minimum EMI in sync buck converter applications ML robust package design % UIL tested RoH Compliant General escription April 9 This N-Channel MOFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of C/C converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r (on), fast switching speed and body diode reverse recovery performance. Applications IMVP Vcore witching for Notebook VRM Vcore witching for esktop and erver OringFET / Load witch C-C Conversion FM766 N-Channel PowerTrench MOFET Top Bottom Pin 5 G G 6 3 7 8 Power 56 MOFET Maximum Ratings T A = 5 C unless otherwise noted ymbol Parameter Ratings Units V rain to ource Voltage 3 V V G Gate to ource Voltage (Note ) ± V rain Current -Continuous (Package limited) T C = 5 C I -Continuous (ilicon limited) T C = 5 C -Continuous T A = 5 C (Note a) 5 A -Pulsed 5 E A ingle Pulse Avalanche Energy (Note 3) 8 mj Power issipation T C = 5 C 78 P Power issipation T A = 5 C (Note a).5 W T J, T TG Operating and torage Junction Temperature Range -55 to +5 C Thermal Characteristics R θjc Thermal Resistance, Junction to Case.6 R θja Thermal Resistance, Junction to Ambient (Note a) 5 Package Marking and Ordering Information C/W evice Marking evice Package Reel ize Tape Width Quantity FM766 FM766 Power 56 3 mm 3 units 9 Fairchild emiconductor Corporation FM766 Rev.
Electrical Characteristics T J = 5 C unless otherwise noted ymbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV rain to ource Breakdown Voltage I = 5 µa, V G = V 3 V BV Breakdown Voltage Temperature T J Coefficient I = 5 µa, referenced to 5 C 7 mv/ C I Zero Gate Voltage rain Current V = V, V G = V µa I G Gate to ource Leakage Current, Forward V G = V, V = V na On Characteristics V G(th) Gate to ource Threshold Voltage V G = V, I = 5 µa.5.9 3. V V G(th) T J Gate to ource Threshold Voltage Temperature Coefficient I = 5 µa, referenced to 5 C -7 mv/ C V G = V, I = 5 A.9.8 r (on) tatic rain to ource On Resistance V G =.5 V, I = 9 A.7 3.5 mω V G = V, I = 5 A, T J = 5 C.5 3.7 g F Forward Transconductance V = 5 V, I = 5 A 5 ynamic Characteristics C iss Input Capacitance 85 5565 pf V = 5 V, V G = V, C oss Output Capacitance 38 83 pf f = MHz C rss Reverse Transfer Capacitance 5 9 pf R g Gate Resistance.9. Ω FM766 N-Channel PowerTrench MOFET witching Characteristics t d(on) Turn-On elay Time 7 3 ns t r Rise Time V = 5 V, I = 5A, 9 8 ns t d(off) Turn-Off elay Time V G = V, R GEN = 6 Ω 37 6 ns t f Fall Time 7 3 ns Q g Total Gate Charge V G = V to V 6 8 nc Q g Total Gate Charge V G = V to.5 V V = 5 V, 7 38 nc Q gs Gate to ource Charge I = 5 A.3 nc Q gd Gate to rain Miller Charge 7. nc rain-ource iode Characteristics V ource to rain iode Forward Voltage V G = V, I =. A (Note ).7.95 V G = V, I = 5 A (Note ).8. V t rr Reverse Recovery Time 6 7 ns Q rr Reverse Recovery Charge 6 nc t a Reverse Recovery Fall Time I F = 5 A, di/dt = A/µs 9 nc t b Reverse Recovery Rise Time 7 nc oftness (t b /t a ). t rr Reverse Recovery Time 36 58 ns I F = 5 A, di/dt = 3 A/µs Q rr Reverse Recovery Charge 3 68 nc Notes:. R θja is determined with the device mounted on a in pad oz copper pad on a.5 x.5 in. board of FR- material. R θjc is guaranteed by design while R θca is determined by the user's board design. a. 5 C/W when mounted on a in pad of oz copper. b. 5 C/W when mounted on a minimum pad of oz copper.. Pulse Test: Pulse Width < 3 µs, uty cycle <.%. 3. E A of 8 mj is based on starting T J = 5 C, L = mh, I A = 6 A, V = 7 V, V G = V. % test at L =.3 mh, I A = 3 A.. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied. 9 Fairchild emiconductor Corporation FM766 Rev.
Typical Characteristics T J = 5 C unless otherwise noted I, RAIN CURRENT (A) NORMALIZE RAIN TO OURCE ON-REITANCE 5 9 6 3.5..5..6....8 Figure. I = 5 A V G = V V G = V V G =.5 V V G = V V G = 3.5 V PULE URATION = 8 µs UTY CYCLE =.5% MAX V, RAIN TO OURCE VOLTAGE (V) V G = 3 V NORMALIZE RAIN TO OURCE ON-REITANCE 3 6 9 5 On-Region Characteristics Figure. Normalized On-Resistance vs rain Current and Gate Voltage.6-75 -5-5 5 5 75 5 5 T J, JUNCTION TEMPERATURE ( o C) r(on), RAIN TO OURCE ON-REITANCE (mω) 8 6 8 6 V G = 3 V V G = 3.5 V V G = V I, RAIN CURRENT (A) T J = 5 o C PULE URATION = 8 µs UTY CYCLE =.5% MAX I = 5 A V G =.5 V V G = V PULE URATION = 8 µs UTY CYCLE =.5% MAX T J = 5 o C 6 8 V G, GATE TO OURCE VOLTAGE (V) FM766 N-Channel PowerTrench MOFET Figure 3. Normalized On- Resistance vs Junction Temperature Figure. On-Resistance vs Gate to ource Voltage I, RAIN CURRENT (A) 5 9 6 3 PULE URATION = 8 µs UTY CYCLE =.5% MAX V = 5 V T J = 5 o C T J = 5 o C T J = -55 o C 3 5 V G, GATE TO OURCE VOLTAGE (V) Figure 5. Transfer Characteristics I, REVERE RAIN CURRENT (A) V G = V T J = 5 o C T J = 5 o C T J = -55 o C....6.8.. V, BOY IOE FORWAR VOLTAGE (V) Figure 6. ource to rain iode Forward Voltage vs ource Current 9 Fairchild emiconductor Corporation FM766 Rev. 3
Typical Characteristics T J = 5 C unless otherwise noted VG, GATE TO OURCE VOLTAGE (V) 8 6 I = 5 A 5 3 5 6 Figure 7. V = V V = 5 V V = V Q g, GATE CHARGE (nc) f = MHz V G = V. 3 V, RAIN TO OURCE VOLTAGE (V) Gate Charge Characteristics Figure 8. Capacitance vs rain to ource Voltage CAPACITANCE (pf) 5 C iss C oss C rss FM766 N-Channel PowerTrench MOFET IA, AVALANCHE CURRENT (A) T J = 5 o C T J = 5 o C T J = o C I, RAIN CURRENT (A) 9 6 3 V G =.5 V Limited by Package V G = V R θjc =.6 o C/W.. t AV, TIME IN AVALANCHE (ms) 5 5 75 5 5 T c, CAE TEMPERATURE ( o C) Figure 9. Unclamped Inductive witching Capability Figure. Maximum Continuous rain Current vs Case Temperature I, RAIN CURRENT (A) 5 THI AREA I LIMITE BY r ms (on) ms INGLE PULE s. T J = MAX RATE R s θja = 5 o C/W C T A = 5 o C... V, RAIN to OURCE VOLTAGE (V) Figure. Forward Bias afe Operating Area us ms P(PK), PEAK TRANIENT POWER (W) V G = V INGLE PULE R θja = 5 o C/W T A = 5 o C.5 - -3 - - t, PULE WITH (sec) Figure. ingle Pulse Maximum Power issipation 9 Fairchild emiconductor Corporation FM766 Rev.
Typical Characteristics T J = 5 C unless otherwise noted NORMALIZE THERMAL IMPEANCE, Z θja... UTY CYCLE-ECENING ORER =.5...5.. INGLE PULE R θja = 5 o C/W. - -3 - - t, RECTANGULAR PULE URATION (sec) 3 5 Figure 3. Junction-to-Ambient Transient Thermal Response Curve P M t t NOTE: UTY FACTOR: = t /t PEAK T J = P M x Z θja x R θja + T A Figure 5. FM766 N-Channel PowerTrench MOFET CURRENT (A) 5 5 di/dt = 3 A/µs -5 8 6 TIME (ns) Figure. Body iode Reverse Recovery Characteristics 9 Fairchild emiconductor Corporation FM766 Rev. 5
ON emiconductor and are trademarks of emiconductor Components Industries, LLC dba ON emiconductor or its subsidiaries in the United tates and/or other countries. ON emiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON emiconductor s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent Marking.pdf. ON emiconductor reserves the right to make changes without further notice to any products herein. ON emiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON emiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON emiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON emiconductor. Typical parameters which may be provided in ON emiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON emiconductor does not convey any license under its patent rights nor the rights of others. ON emiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. hould Buyer purchase or use ON emiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON emiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON emiconductor was negligent regarding the design or manufacture of the part. ON emiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORERING INFORMATION LITERATURE FULFILLMENT: Literature istribution Center for ON emiconductor 95 E. 3nd Pkwy, Aurora, Colorado 8 UA Phone: 33 675 75 or 8 3 386 Toll Free UA/Canada Fax: 33 675 76 or 8 3 3867 Toll Free UA/Canada Email: orderlit@onsemi.com emiconductor Components Industries, LLC N. American Technical upport: 8 8 9855 Toll Free UA/Canada Europe, Middle East and Africa Technical upport: Phone: 33 79 9 Japan Customer Focus Center Phone: 8 3 587 5 www.onsemi.com ON emiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local ales Representative www.onsemi.com
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