Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
FDD8782/FDU8782 N-Channel PowerTrench MOSFET 25V, 35A, mω General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r DS(on) and fast switching speed. Application Vcore DC-DC for Desktop Computers and Servers VRM for Intermediate Bus Architecture G D S I-PAK (TO-25AA) Features Max r DS(on) =.mω at V GS = V, I D = 35A Max r DS(on) = 4.mΩ at V GS = 4.5V, I D = 35A Low gate charge: Q g() = 8nC(Typ), V GS = V Low gate resistance Avalanche rated and % tested RoHS Compliant G D S Short Lead I-PAK G March 25 D S MOSFET Maximum Ratings T C = 25 C unless otherwise noted Symbol Parameter Ratings Units V DS Drain to Source Voltage 25 V V GS Gate to Source Voltage ±2 V I D -Continuous (Die Limited) 54 Drain Current -Continuous (Package Limited) 35 Thermal Characteristics -Pulsed (Note ) 32 E AS Single Pulse Avalanche Energy (Note 2) 72 mj P D Power Dissipation 5 W T J, T STG Operating and Storage Temperature -55 to 75 C R θjc Thermal Resistance, Junction to Case TO-252,TO-25 3. C/W R θja Thermal Resistance, Junction to Ambient TO-252,TO-25 C/W R θja Thermal Resistance, Junction to Ambient TO-252,in 2 copper pad area 52 C/W Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDD8782 FDD8782 TO-252AA 3 6mm 25 units FDU8782 FDU8782 TO-25AA N/A(Tube) N/A 75 units FDU8782 FDU8782_F7 TO-25AA N/A(Tube) N/A 75 units A 29 Fairchild Semiconductor Corporation FDD8782/FDU8782 Rev..2
Electrical Characteristics T J = 25 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics B VDSS Drain to Source Breakdown Voltage I D = 25μA, V GS = V 25 V ΔB VDSS ΔT J I DSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current I D = 25μA, referenced to 25 C V DS = 2V, V GS = V 4.3 mv/ C T J = 5 C 25 I GSS Gate to Source Leakage Current V GS = ±2V ± na On Characteristics V GS(th) Gate to Source Threshold Voltage V GS = V DS, I D = 25μA.2.7 2.5 V ΔV GS(th) ΔT J r DS(on) Gate to Source Threshold Voltage Temperature Coefficient Drain to Source On Resistance Dynamic Characteristics I D = 25μA, referenced to 25 C μa -6.5 mv/ C V GS = V, I D = 35A 8.5. V GS = 4.5V, I D = 35A. 4. V GS = V, I D = 35A T J = 75 C 2. 8. C iss Input Capacitance 92 22 pf V DS = 3V, V GS = V, C oss Output Capacitance 23 3 pf f = MHz C rss Reverse Transfer Capacitance 6 24 pf R g Gate Resistance f = MHz.4 Ω Switching Characteristics t d(on) Turn-On Delay Time 7 4 ns t V DD = 3V, I D = 35A r Rise Time 9 8 ns V GS = V, R GS = 9Ω t d(off) Turn-Off Delay Time 22 36 ns t f Fall Time 4 25 ns Q g Total Gate Charge V GS = V to V 8 25 nc Q V DD = 3V g Total Gate Charge V GS = V to 5V 9.4 3 nc I D = 35A Q gs Gate to Source Gate Charge 3. nc I g =.ma Q gd Gate to Drain Miller Charge 4. nc mω Drain-Source Diode Characteristics V SD Source to Drain Diode Forward Voltage V GS = V, I S = 35A.96.25 V GS = V, I S = 5A.86.2 t rr Reverse Recovery Time I F = 35A, di/dt = A/μs 25 38 ns Q rr Reverse Recovery Charge I F = 35A, di/dt = A/μs 7 26 nc Notes: : Pulse time < 3us,Duty cycle = 2%. 2: Starting T J = 25 o C, L =.mh, I AS = 2A,V DD = 23V, V GS = V. V FDD8782/FDU8782 Rev..2 2
Typical Characteristics T J = 25 C unless otherwise noted ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 7 6 5 4 3 2 V GS = V V GS = 4.5V PULSE DURATION = 8μs DUTY CYCLE =.5%MAX V GS = 3.5V V GS = 3V 2 3 4 V DS, DRAIN TO SOURCE VOLTAGE (V).8.6.4.2..8 Figure. On Region Characteristics I D = 35A V GS = V.6-8 -4 4 8 2 6 2 T J, JUNCTION TEMPERATURE ( o C) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE rds(on), ON-RESISTANCE (mω) 7 6 5 4 3 2 V GS = 3V PULSE DURATION = 8μs DUTY CYCLE =.5%MAX V GS = 3.5V V GS = 4.5V V GS = V 2 3 4 5 6 7 I D, DRAIN CURRENT(A) Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 4 3 2 I D = 5A T J = 25 o C PULSE DURATION = 8μs DUTY CYCLE =.5%MAX T J = 75 o C 2 4 6 8 V GS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage I D, DRAIN CURRENT (A) 7 6 5 4 3 2 PULSE DURATION = 8μs DUTY CYCLE =.5%MAX T J = 75 o C T J = 25 o C T J = -55 o C..5 2. 2.5 3. 3.5 4. 4.5 V GS, GATE TO SOURCE VOLTAGE (V) IS, REVERSE DRAIN CURRENT (A).. V GS = V T J = 75 o C T J = 25 o C T J = -55 o C E-3..2.4.6.8..2.4 V SD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current FDD8782/FDU8782 Rev..2 3
Typical Characteristics T J = 25 C unless otherwise noted VGS, GATE TO SOURCE VOLTAGE(V) IAS, AVALANCHE CURRENT(A) 8 6 4 2 5 5 2 25 Figure 7. 5 V DD = 3V V DD = 8V V DD = 8V Q g, GATE CHARGE(nC) CAPACITANCE (pf) 3 f = MHz V GS = V. V DS, DRAIN TO SOURCE VOLTAGE (V) Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage T J = 5 o C T J = 25 o C T J = 25 o C... t AV, TIME IN AVALANCHE(ms) ID, DRAIN CURRENT (A) 6 5 4 3 2 C oss C rss R θjc = 3. o C/W V GS = V V GS = 4.5V C iss 25 5 75 25 5 75 T C, CASE TEMPERATURE( o C) 3 Figure 9. Unclamped Inductive Switching Capability Figure. Maximum Continuous Drain Current vs Case Temperature ID, DRAIN CURRENT (A) 5 LIMITED BY PACKAGE OPERATION IN THIS AREA MAY BE LIMITED BY r DS(on) SINGLE PULSE T J = MAX RATED T C = 25 o C. V DS, DRAIN TO SOURCE VOLTAGE (V) us us ms ms DC 5 ), PEAK TRANSIENT POWER (W) P(PK 7 V GS = V SINGLE PULSE T C = 25 o C FOR TEMPERATURES ABOVE 25 o C DERATE PEAK CURRENT AS FOLLOWS: I = I 25 75 T ---------------------- C 5-5 -4-3 -2 - t, PULSE WIDTH (s) Figure. Forward Bias Safe Operating Area Figure 2. Single Pulse Maximum Power Dissipation FDD8782/FDU8782 Rev..2 4
Typical Characteristics T J = 25 C unless otherwise noted NORMALIZED THERMAL IMPEDANCE, Z θjc 2.. DUTY CYCLE-DESCENDING ORDER D =.5.2..5.2. SINGLE PULSE E-3-5 -4-3 -2 - t, RECTANGULAR PULSE DURATION(s) Figure 3. Transient Thermal Response Curve P DM t t 2 NOTES: DUTY FACTOR: D = t /t 2 PEAK T J = P DM x Z θjc x R θjc + T C FDD8782/FDU8782 Rev..2 5
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 952 E. 32nd Pkwy, Aurora, Colorado 8 USA Phone: 33 675 275 or 8 344 386 Toll Free USA/Canada Fax: 33 675 276 or 8 344 3867 Toll Free USA/Canada Email: orderlit@onsemi.com Semiconductor Components Industries, LLC N. American Technical Support: 8 282 9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 42 33 79 29 Japan Customer Focus Center Phone: 8 3 587 5 www.onsemi.com ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative www.onsemi.com
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